Abstract: A freely rotatable microelectromechanical mirror and mirror array. Each mirror is connected to a plate flexibly suspended from a plurality of actuators by a plurality of plate flexures. The actuators are flexibly suspended from a support structure by a plurality of actuator flexures. The support structure is held above and electrically isolated from a reference layer by a plurality of standoff posts. The reference layer contains a plurality of actuation means such as control electrodes to move the actuators in first and second directions when actuated. Control voltages can be selectively applied to selective control electrodes to selectively move the actuators, and extend the plurality of plate flexures. The extended plate flexures create a net restoring force or torque to translate or rotate the freely movable plate. The plate and attached mirror are thereby translated or rotated about an arbitrary axis of rotation without stress.

Abstract: A hermetic media interface for a sensor package is disclosed. Preferably, the hermetic media interface is incorporated into a pressure sensor package for interfacing directly to fluid and/or gaseous media. In one embodiment, the pressure sensor package includes a semiconductor die and a pressure port that are housed in a pre-molded plastic package. A eutectic solder is coupled between the semiconductor die and the pressure port to solder the same to the semiconductor die. The semiconductor die may be metallized to enhance solderability. In an alternative embodiment, the pressure port is made from one or more plastic materials and the pressure port is attached to the semiconductor die with an adhesive. An integral stress-isolation region may optionally be incorporated on the semiconductor die.

Abstract: A chip-scale sensor package is described. In one embodiment, the chip-scale sensor package includes a semiconductor substrate having a sensor region, and a semiconductor cap having a recess. The semiconductor cap is bonded to the semiconductor substrate with a thermocompression bond to form a cavity therebetween. The semiconductor substrate is bonded to the semiconductor cap using different types of materials. The semiconductor substrate and/or the semiconductor cap may optionally include a semiconductor device such as an electronically trimmable integrated circuit fabricated thereon. In addition, the semiconductor substrate may optionally include an integral stress isolation flexible region for isolation of the sensor region.

Abstract: A semiconductor sensor with epi-pocket isolation is described. In one embodiment, the semiconductor sensor comprises a deformable member which includes a first silicon region of a first conductivity type and a second silicon region of a second conductivity type surrounding the first silicon region. The semiconductor sensor further comprises a stress-sensitive diffused resistive element disposed on the deformable member in the first silicon region.

Abstract: A rigid encapsulation package for semiconductor sensors, actuators, and devices is described. In one embodiment, a semiconductor pressure sensor includes a sensor element having a deformable diaphragm for measurement of pressure, and a cap that includes a recess. The cap is attached to the sensor element to form a cavity therebetween. The pressure sensor further includes a leadframe, interconnecting bond wires, a pressure port that is coupled to the sensor element, and a nominally rigid material formed over the sensor element, cap, leadframe, and bond wires. The material may include one or more of the following: epoxy, RTV, resins, and gel. The sensor element may include a built-in stress isolation flexible region. A second pressure port may optionally be attached to the housing for providing differential or gage pressure measurements.

Abstract: A semiconductor device die comprising one or more stress-isolated regions is described. In one embodiment, stress isolation is achieved by providing a nominally rigid rim region which forms part of the stress isolated region. The rim region is attached to a nominally rigid periphery or frame region by a flexible, spring-like stress-isolation region such that displacements and twisting of the frame region due to mounting and packaging stresses are mitigated, do not propagate to the stress-isolated region, and do not effect the output signal. The stress isolation flexible region includes first and second members etched from the semiconductor device material to mechanically isolate the diaphragm from its periphery. The first member is formed by etching a first deep trench. The combination of the first deep trench etch and a second deep trench etch define the second member. In one embodiment, the stress-isolated region comprises a pressure-sensitive deformable diaphragm for sensing pressure.

Abstract: A semiconductor pressure sensor compatible with fluid and gaseous media applications is described. The semiconductor pressure sensor includes a sensor capsule having a semiconductor die and a silicon cap that is bonded to the semiconductor die. The semiconductor die includes a diaphragm that incorporates piezoresistive sensors thereon, and a stress isolation mechanism for isolating the diaphragm from packaging and mounting stresses. The silicon cap includes a cavity for allowing the diaphragm to deflect. The semiconductor pressure sensor further includes a pressure port that is hermetically attached to the semiconductor die. The sensor capsule and pressure port may be incorporated into a plastic housing. In one embodiment, the silicon cap is bonded to the semiconductor die to form an integral pressure reference. In an alternative embodiment, a second pressure port is provided for allowing gage or differential pressure measurements. A technique for incorporating the piezoresistive sensors is also described.

Abstract: The present invention is a semiconductor pressure sensor. In one embodiment, the semiconductor pressure sensor includes a diaphragm having a first thickness and at least cone raised boss that is coupled to a first side of the diaphragm. The at least one raised boss increases the diaphragm thickness in the region occupied by the at least one raised boss to a second thickness. A plurality of piezoresistors are disposed on a second side of the diaphragm in regions of the first thickness. In another embodiment, a semiconductor pressure sensor diaphragm includes at least one raised boss disposed along a central axis on a first side of the diaphragm. At least two raised bridge regions are disposed along the central axis, interconnecting the at least one raised boss and a diaphragm edge. Each raised bridge region is narrower than the raised boss. A plurality of piezoresistors are disposed on the raised bridge regions of the diaphragm along the central axis.