Abstract: A membrane assembly is provided that includes a support comprising a micro-porous material; and an insoluble layer secured to a surface of the support. The insoluble layer is a reaction product of a reactant solution comprising a chain-capping reagent. A system and associated method are provided also.

Abstract: A method includes: coat a slurry that includes a carbon material, a water-insoluble binder, and a water-soluble polymer on a surface of a current collector to form a template structure; then dry the template structure; and finally, contact the template structure to an aqueous solution, and thereby to remove the water-soluble polymer and to form at least one electrode having a plurality of pores.

Abstract: A composition includes a Group (VIII) transition metal, an anionic ligand bonded to the metal, a neutral electron donor ligand bonded to the metal, and an alkylidene group bonded to the metal. The alkylidene group includes a cycloaliphatic radical substituted with an ionic group. An associated method is also provided.

Abstract: An electrode assembly is provided. The assembly includes a chargeable electrode configured to adsorb oppositely charged ions, where the electrode comprises a porous material. The assembly further includes an ion exchange material in contact with the porous material of the chargeable electrode, where the ion exchange material is similarly charged as the chargeable electrode, and where the ion exchange material is permeable to the oppositely charged ions and at least partially impermeable to the similarly charged ions.

Abstract: A galvanic cell utilizing a gas scrubber is provided. The galvanic cell may include a galvanic cell unit and a gas scrubber comprising an active material layer, a resistance coil in contact with the active material layer, a first shutter positioned between the active material layer and ambient air, a second shutter may be positioned between the galvanic cell unit and the active material layer.

Abstract: A metal oxide semiconductor field effect transistor power device with a lightly doped silicon substrate includes a source region and a drain region. At least one field implanted island region is formed along the surface of the substrate between the source and drain regions with a field oxide region formed above the field implanted region, a dielectric layer and a gate electrode formed over the substrate, and self-aligned source and drain regions implanted into the device with external electrodes connected thereto.

Abstract: A metal oxide semiconductor field effect transistor power device with a lightly doped silicon substrate includes a source region and a drain region. At least one field implanted island region is formed along the surface of the oppositely substrate between the source and drain regions with a field oxide region formed above the field implanted region, a dielectric layer and a gate electrode of matching configurations formed over the substrate, and self-aligned source drain regions implanted into the device with external electrodes connected thereto.