Abstract: Disclosed is a blood-brain barrier vascular network implemented in a microfluidic chip. The blood-brain bather vascular network structure (BBB on a chip) (in vitro blood-brain bather (BBB)-on-a chip) formed in a microfluidic chip manufactured by a present manufacturing method of the in vitro blood-brain barrier (BBB)-on-a chip may reconstruct the blood-brain barrier in a real human body more similarly due to a specific cell configuration, compared to the conventional in vitro blood-brain barrier (BBB)-on-a chip, and thus may be used as a more accurate in vitro blood-brain barrier, and may be used for the development of various cellular therapeutic agents or drugs that work in the treatment of various brain diseases.

Abstract: Provided are a rotatable display device and a method of displaying content using the same. The display device includes a display; and a controller configured to control the display to display first video content based on a first source, sense pivoting of the display while the first video content is displayed, and control the display, in response to the pivoting, to display second video content based on at least one second source different from the first source, the second video content being different from the first video content.

Abstract: A method for processing an image signal, an image signal processor, and an image sensor chip are disclosed. A method for processing an image signal includes generating Bayer order status information indicating whether a Bayer order of a Bayer pattern image has been changed, based on translation information of gyro information, performing translation correction about the Bayer pattern image using the translation information, and performing interpolation about the Bayer pattern image in which the translation correction has been performed, based on the Bayer order status information.

Abstract: A resist composition including a polymer; and a compound represented by Formula 1, in Formula 1, R1 is hydrogen, a halogen, an alkyl group having 1 to 7 carbon atoms, a carbonyl group having 1 to 7 carbon atoms, an ester group having 1 to 7 carbon atoms, an acetal group having 1 to 7 carbon atoms, an alkoxy group having 1 to 7 carbon atoms, an ether group having 1 to 7 carbon atoms, or a group represented by Formula R, and R2, R3, R4 and R5 are hydrogen, a halogen, an alkyl group having 1 to 7 carbon atoms, an ester group having 1 to 7 carbon atoms, an acetal group having 1 to 7 carbon atoms, an alkoxy group having 1 to 7 carbon atoms, or an ether group having 1 to 7 carbon atoms,

Abstract: A resist composition including a polymer; a photoacid generator; and a material represented by Formula 1:

Abstract: A photolithography method and a method of manufacturing a semiconductor device, the photolithography method including applying a composition on a substrate to form a photoresist layer; performing an exposing process using extreme ultraviolet radiation (EUV) on the photoresist layer; and developing the photoresist layer to form photoresist patterns, wherein the composition includes a photosensitive resin, a photo-acid generator, a photo decomposable quencher, an additive, and a solvent, and the additive is a compound represented by the following Formula 4A: in Formula 4A, R1 to R5 are each independently hydrogen or iodine, at least one of R1 to R5 being iodine.

Abstract: An image sensing device includes an image sensor including a first sub-pixel array and a second sub-pixel array. The first sub-pixel array includes a plurality of first pixels having a first color filter, and the second sub-pixel array includes a plurality of second pixels having a second color filter and a plurality of third pixels for phase detection. The image sensor may generate first pixel values from the first pixels, second pixel values from the second pixels and third pixel values from the third pixels. The image sensing device also includes an image processor suitable for generating a first image value corresponding to the first sub-pixel array based on the first pixel values and generating a second image value corresponding to the second sub-pixel array based on the first to third pixel values.

Abstract: A method for processing an image signal, an image signal processor, and an image sensor chip are disclosed. A method for processing an image signal includes generating Bayer order status information indicating whether a Bayer order of a Bayer pattern image has been changed, based on translation information of gyro information, performing translation correction about the Bayer pattern image using the translation information, and performing interpolation about the Bayer pattern image in which the translation correction has been performed, based on the Bayer order status information.

Abstract: Provided are a rotatable display device and a method of displaying content using the same. The display device includes a display; and a controller configured to control the display to display first video content based on a first source, sense pivoting of the display while the first video content is displayed, and control the display, in response to the pivoting, to display second video content based on at least one second source different from the first source, the second video content being different from the first video content.

Abstract: Provided are a rotatable display device and a method of displaying content using the same. The display device includes a display; and a controller configured to control the display to display first video content based on a first source, sense pivoting of the display while the first video content is displayed, and control the display, in response to the pivoting, to display second video content based on at least one second source different from the first source, the second video content being different from the first video content.

Abstract: A semiconductor device is provided. The semiconductor device includes a fin type pattern, a field insulating film on a part of a sidewall of the fin-type pattern, and a gate electrode intersecting with the fin-type pattern, on the fin-type pattern and the field insulating film. The gate electrode on the field insulating film includes a first portion, a second portion, and a third portion on the field insulating film. A first width of the first portion increases as a first distance from the field insulating film, increases width of the second portion decreases as a second distance from the field insulating film increases, and a third width of the third portion increases or is substantially constant as a third distance from the field insulating film increases.

Abstract: An image sensing device includes an image sensor including a first sub-pixel array and a second sub-pixel array. The first sub-pixel array includes a plurality of first pixels having a first color filter, and the second sub-pixel array includes a plurality of second pixels having a second color filter and a plurality of third pixels for phase detection. The image sensor may generate first pixel values from the first pixels, second pixel values from the second pixels and third pixel values from the third pixels. The image sensing device also includes an image processor suitable for generating a first image value corresponding to the first sub-pixel array based on the first pixel values and generating a second image value corresponding to the second sub-pixel array based on the first to third pixel values.

Abstract: User equipment (UE) that includes a processor and that executes a random access procedure with a base station (E-UTRAN Node B (eNodeB), also known as Evolved Node B) is provided. The UE can at least temporarily be embodied by the processor. The UE may comprise: a determination unit for determining a message size that can be transmitted and that corresponds to a physical random access channel according to an assigned communication method with the base station; a calculation unit for configuring a message to correspond to the message size and for respectively calculating a preamble index and at least one message index from the message; and an encoder for providing respective encoding of the preamble index and the at least one message index, and transmitting the same to the base station.

Abstract: A semiconductor device is provided. The semiconductor device includes a fin type pattern, a field insulating film on a part of a sidewall of the fin-type pattern, and a gate electrode intersecting with the fin-type pattern, on the fin-type pattern and the field insulating film. The gate electrode on the field insulating film includes a first portion, a second portion, and a third portion on the field insulating film. A first width of the first portion increases as a first distance from the field insulating film, increases width of the second portion decreases as a second distance from the field insulating film increases, and a third width of the third portion increases or is substantially constant as a third distance from the field insulating film increases.

Abstract: Provided are a rotatable display device and a method of displaying content using the same. The display device includes a display; and a controller configured to control the display to display first video content based on a first source, sense pivoting of the display while the first video content is displayed, and control the display, in response to the pivoting, to display second video content based on at least one second source different from the first source, the second video content being different from the first video content.

Abstract: In a method of manufacturing a semiconductor device, a mask layer and a first layer may be sequentially formed on a substrate. The first layer may be patterned by a photolithography process to form a first pattern. A silicon oxide layer may be formed on the first pattern. A coating pattern including silicon may be formed on the silicon oxide layer. The mask layer may be etched using a second pattern as an etching mask to form a mask pattern, and the second pattern may includes the first pattern, the silicon oxide layer and the coating pattern. The mask pattern may have a uniform size.

Abstract: Provided is a random access method of a node, the method including receiving spatial group information on spatial groups generated in a cell from a base station, identifying a spatial group corresponding to the node based on the spatial group information, transmitting a preamble signal to the base station by generating the preamble signal, and receiving a random access response message in response to the preamble signal.

Abstract: A method of manufacturing a semiconductor device, including forming an etching target film on a substrate; forming an anti-reflection film on the etching target film; forming a photoresist film on the anti-reflection film; exposing the photoresist film; performing heat treatment on the anti-reflection film and the photoresist film to form a covalent bond between the anti-reflection film and the photoresist film; and developing the photoresist film.