Abstract: User equipment (UE) that includes a processor and that executes a random access procedure with a base station (E-UTRAN Node B (eNodeB), also known as Evolved Node B) is provided. The UE can at least temporarily be embodied by the processor. The UE may comprise: a determination unit for determining a message size that can be transmitted and that corresponds to a physical random access channel according to an assigned communication method with the base station; a calculation unit for configuring a message to correspond to the message size and for respectively calculating a preamble index and at least one message index from the message; and an encoder for providing respective encoding of the preamble index and the at least one message index, and transmitting the same to the base station.

Abstract: Provided is a method of fabricating a semiconductor device. The method includes forming an anti-reflection layer on a lower layer, forming photoresist patterns on the anti-reflection layer, forming protection patterns to cover the photoresist patterns, respectively, etching the anti-reflection layer using the photoresist patterns covered with the protection patterns as an etch mask to form anti-reflection patterns, forming spacers to cover sidewalls of the anti-reflection patterns, and removing the anti-reflection patterns.

Abstract: A lithography apparatus and a method of using the same, the apparatus including a stage for accommodating a substrate that has a photoresist film thereon; a main unit on the stage, the main unit being configured to irradiate a projection beam to the photoresist film; and an electric field unit adjacent to the stage, the electric field unit being configured to apply an electric field to the photoresist film, wherein the electric field unit is configured to be turned on at a same time as or before irradiation of the projection beam, and is configured to be turned off at a same time as or after termination of the projection beam.

Abstract: In a method of manufacturing a semiconductor device, a mask layer and a first layer may be sequentially formed on a substrate. The first layer may be patterned by a photolithography process to form a first pattern. A silicon oxide layer may be formed on the first pattern. A coating pattern including silicon may be formed on the silicon oxide layer. The mask layer may be etched using a second pattern as an etching mask to form a mask pattern, and the second pattern may includes the first pattern, the silicon oxide layer and the coating pattern. The mask pattern may have a uniform size.

Abstract: Provided is a method of fabricating a semiconductor device. The method includes forming an anti-reflection layer on a lower layer, forming photoresist patterns on the anti-reflection layer, forming protection patterns to cover the photoresist patterns, respectively, etching the anti-reflection layer using the photoresist patterns covered with the protection patterns as an etch mask to form anti-reflection patterns, forming spacers to cover sidewalls of the anti-reflection patterns, and removing the anti-reflection patterns.

Abstract: A method of manufacturing a semiconductor device, including forming an etching target film on a substrate; forming an anti-reflection film on the etching target film; forming a photoresist film on the anti-reflection film; exposing the photoresist film; performing heat treatment on the anti-reflection film and the photoresist film to form a covalent bond between the anti-reflection film and the photoresist film; and developing the photoresist film.

Abstract: A photolithographic rinse solution includes deionized water, and a surfactant, the surfactant including a cyclic amine group and at least one non-amine cyclic group joined to or fused with the cyclic amine group, wherein the cyclic amine group includes a ring having a carbon number of 4 to 6, and the non-amine cyclic group includes a ring having a carbon number of 5 to 8.

Abstract: Provided is a random access method of a node, the method including receiving spatial group information on spatial groups generated in a cell from a base station, identifying a spatial group corresponding to the node based on the spatial group information, transmitting a preamble signal to the base station by generating the preamble signal, and receiving a random access response message in response to the preamble signal.

Abstract: A photolithographic rinse solution includes deionized water, and a surfactant, the surfactant including a cyclic amine group and at least one non-amine cyclic group joined to or fused with the cyclic amine group, wherein the cyclic amine group includes a ring having a carbon number of 4 to 6, and the non-amine cyclic group includes a ring having a carbon number of 5 to 8.

Abstract: Disclosed is a method for transmitting integrated packet data by a relay station (RS) in a multi-hop relay communication system, including: integrating a plurality of packet data received from mobile stations (MSs) and determining a data integration scheme for transmitting the integrated data to base station (BS); receiving packet data from MSs, classifying the received packet data into one or more integration packet classes according to the determined data integration scheme, and storing the same; determining QoS (Quality of Service) requirements and a MCS (Modulation and Coding Scheme) level of the stored integration packet classes; calculating required resource according to the determined MCS level and requesting an allocation of the resource from the BS; receiving an approval for resource allocation from the BS, and modulating and coding the integrated packet class, mapping the same to the resource to configure an integrated packet; and transmitting the configured integrated packet to the BS.

Abstract: A lithography apparatus and a method of using the same, the apparatus including a stage for accommodating a substrate that has a photoresist film thereon; a main unit on the stage, the main unit being configured to irradiate a projection beam to the photoresist film; and an electric field unit adjacent to the stage, the electric field unit being configured to apply an electric field to the photoresist film, wherein the electric field unit is configured to be turned on at a same time as or before irradiation of the projection beam, and is configured to be turned off at a same time as or after termination of the projection beam.

Abstract: The inventive concept provides methods of manufacturing semiconductor devices having a fine pattern. In some embodiments, the methods comprise forming an etch-target film on a substrate, forming a first mask pattern on the etch-target film, forming a second mask pattern by performing an ion implantation process in the first mask pattern, and etching the etch-target film using the second mask pattern.

Abstract: A photolithographic rinse solution includes deionized water, and a surfactant, the surfactant including a cyclic amine group and at least one non-amine cyclic group joined to or fused with the cyclic amine group, wherein the cyclic amine group includes a ring having a carbon number of 4 to 6, and the non-amine cyclic group includes a ring having a carbon number of 5 to 8.

Abstract: The inventive concept provides methods of manufacturing semiconductor devices having a fine pattern. In some embodiments, the methods comprise forming an etch-target film on a substrate, forming a first mask pattern on the etch-target film, forming a second mask pattern by performing an ion implantation process in the first mask pattern, and etching the etch-target film using the second mask pattern.

Abstract: A method of manufacturing an inkjet printhead, in which a solvent included in a positive photoresist composition or in a non-photosensitive soluble polymer composition which is used to form a sacrificial layer has a different polarity from that of a solvent included in a negative photoresist composition that is used to form at least one of a channel forming layer and a nozzle layer.

Abstract: A photoresist composition including an oxetane-containing compound represented by Formula 1 or 2, an oxirane-containing compound represented by Formula 3 or 4, a photoinitiator, and a solvent, a method of forming a pattern using the photoresist composition, and an inkjet print head including a polymerization product of the photoresist composition. The photoresist composition provides a polymerization product which resists formation of cracks due to an inner stress, and has excellent heat tolerance, excellent chemical resistance, excellent adhesiveness, and excellent durability.

Abstract: Disclosed is a method for transmitting integrated packet data by a relay station (RS) in a multi-hop relay communication system, including: integrating a plurality of packet data received from mobile stations (MSs) and determining a data integration scheme for transmitting the integrated data to base station (BS); receiving packet data from MSs, classifying the received packet data into one or more integration packet classes according to the determined data integration scheme, and storing the same; determining QoS (Quality of Service) requirements and a MCS (Modulation and Coding Scheme) level of the stored integration packet classes; calculating required resource according to the determined MCS level and requesting an allocation of the resource from the BS; receiving an approval for resource allocation from the BS, and modulating and coding the integrated packet class, mapping the same to the resource to configure an integrated packet; and transmitting the configured integrated packet to the BS.

Abstract: A communication method using statistical multiplexing in which pre-determined hopping patterns are respectively allocated to two or more users who communicate with a base station using orthogonal resources, the communication method includes: receiving a transmission signal transmitted using the orthogonal resources; and acquiring data from the received transmission signal, wherein each of the users belongs to one of two or more groups and the pre-determined hopping patterns are allocated to prevent collision between the users belonging to the same group.

Abstract: A method of manufacturing an inkjet printhead, in which a solvent included in a positive photoresist composition or in a non-photosensitive soluble polymer composition which is used to form a sacrificial layer has a different polarity from that of a solvent included in a negative photoresist composition that is used to form at least one of a channel forming layer and a nozzle layer.

Abstract: An oxetane-containing compound, a photoresist composition including the same, a method of preparing patterns using the photoresist composition, and an inkjet print head including polymerization products of the oxetane-containing compound.