Abstract: An etch stop player (22) for permitting distinguishing between two similar layers (20, 24), such as two oxide layers, during etching is provided. The etch stop layer comprises a silicon-oxyhalide polymer, preferably a silicon-oxyfluoride polymer. Use of the polymer as an etch stop layer permits closer placement of metal conductor surfaces (12, 12') and contacts (14').

Abstract: Gaseous sulfur trioxide is used to remove various organic coatings, polymerized photoresist, and especially implant and deep-UV hardened photoresist layers, during the manufacture of semiconductor or ceramic devices.

Abstract: A plasma etching process is provided which etches n-type, p-type, and intrinsic polysilicon on the same wafer at substantially the same rate. Native oxide is first removed by etching in a conventional oxide etchant, such as SiCl.sub.4 /Cl.sub.2, BCl.sub.3 /Cl.sub.2, CCl.sub.4, other mixtures of fluorinated or chlorinated gases, and mixtures of Freon-based gases. The polysilicon is then etched in an etchant comprising at least about 75% hydrogen and the balance a halogen-containing fluid, such as chloride. The silicon etchant etches at a rate of about 300 to 500 .ANG. for a batch of 10 wafers, depending on hydrogen concentration, power, flow rate of gas mixture, and gas pressure.

Abstract: A method is disclosed for making a highly planarized integrated circuit structure having deposited oxide portions planarized to the level of adjacent portions of the integrated circuit structure which comprises: deposition, over an integrated circuit structure having first portions at a height higher than the remainder of the integrated circuit structure, a conformal oxide layer; depositing a layer of a planarizing material such as polysilicon over the conformal oxide layer; polishing the structure a first time to expose the highest portions of the underlying conformal oxide layer; etching the structure a first time with an etchant system capable of removing the conformal oxide preferentially to the planarizing material; further polishing the structure a second time to remove planarizing material left from the first etching step; and then optionally etching the remainder of the structure to remove any remaining planarizing material and the remaining conformal oxide over the raised portions of the underlying i

Abstract: A system for scheduling the operation of interrelated machines which perform a process flow. A global definition of the system is made once, and each machine has an individual profile describing its local interaction with the system. Local scheduling decisions for each machine are made based on that machines individual profile and the state of the manufacturing facility at the time a decision is needed. Operation of the individual machines is controlled by the local scheduling decisions made therefor.