Abstract: A method for treating an effluent gas from a semiconductor processing system includes the steps of exhausting the effluent gas from a processing chamber, and catalytically treating the effluent gas with the at least one mixed metal oxide. The effluent gas includes unconsumed process gasses introduced during semiconductor processing operations, such as during chemical vapor deposition (CVD) and plasma-reactive ion etching. The mixed metal oxide may include a hetero bi-metal oxide, a hetero tri-metal oxide, or a perovskite. A hetero bi-metal oxide includes LaCoO3 and LaMnO3, for example, and a hetero tri-metal oxide includes (LaxPr1−x)CoO3 and (LaxPr1−x)MnO3, for example. The effluent gas may include at least carbon monoxide and/or ozone. Thus, catalytically treating the effluent gas preferably includes the catalytically converting carbon monoxide to carbon dioxide and/or ozone to oxygen.

Abstract: According to the present invention, the dishing of copper during chemical mechanical polishing (CMP) process can be significantly reduced, and in most instances eliminated, by the use of electroplated alloys of copper whereas the alloying metal forms a continuous solid solution with the copper. By forming electroplated alloys of copper with metals that form continuous solid solutions therewith, a deposition layer of such an alloy on the surface of a barrier metal layer allows for lowering the selectivity of the slurry polish used during the CMP process towards the alloy. The alloys of copper with metals that form a continuous solid solution in an electroplating process changes the oxidation characteristics, mechanical properties, electrical properties, stiffness parameters and hardness parameters of the copper. The change in these properties allows the alloy layer and barrier layer to be polished at an equivalent rate until the entire barrier layer has been polished.

Abstract: A polishing fluid comprising a distributed organic phase and a continuous aqueous phase. The distributed phase has at least one complexing agent and the aqueous phase has abrasive particles dispersed therein. Reaction products generated during polishing interact with the complexing agent(s) to form organometallic complexes. Further disclosed is a polishing method, a semiconductor device and semiconductor device fabrication method utilizing the polishing fluid.

Abstract: A CMP slurry includes a first emulsion having a continuous aqueous phase and a second emulsion. The first emulsion includes abrasive particles, and the second emulsion captures metal particles polished from the semiconductor wafer. Thus, metal particles can be removed from the slurry during CMP to avoid damaging and/or contaminating the semiconductor wafer.

Abstract: A polishing fluid comprising a distributed organic phase and a continuous aqueous phase, each phase comprising at least one complexing agent. The aqueous phase also having abrasive particles dispersed therein. Reaction products generated during polishing interact with the aqueous phase complexing agent to form water soluble metallic complexes, the water soluble metallic complexes diffuse to an organic/water interface where they release complexing agent molecules in the aqueous phase and generate metal ions which interact with the organic phase complexing agent to form organometallic complexes. Further disclosed is a polishing method, a semiconductor device and semiconductor device fabrication method utilizing the polishing fluid.

Abstract: The present invention provides a composite polishing pad, comprising. In an advantageous embodiment, the composite polishing pad includes a polishing pad member comprising a material having a predetermined hardness and an annular support member underlying a periphery of the polishing pad member, the annular support member having a hardness less than the predetermined hardness of the polishing pad member.

Abstract: A method for making a layout for an interconnect layer of a semiconductor device to facilitate uniformity of planarization during manufacture of the semiconductor device includes determining an active interconnect feature density for each of a plurality of layout regions of the interconnect layout. The method further includes adding dummy fill features to each layout region to obtain a desire density of active interconnect features and dummy fill features to facilitate uniformity of planarization during manufacturing of the semiconductor device. By adding dummy fill features to obtain a desired density of active interconnect features and dummy fill features, dummy fill features are not unnecessarily added, and each layout region has a uniform density.

Abstract: A chemical mechanical polishing (CMP) system includes a polishing device including a polishing article. The polishing device holds the semiconductor wafer and provides relative movement between the semiconductor wafer and the polishing article with a slurry therebetween. The CMP system also includes a slurry processor for processing used slurry from the polishing device and for delivering processed slurry to the polishing device. The slurry processor including a metal separator for separating metal particles, polished from the semiconductor wafer, from the used slurry. The slurry can be continuously recirculated during a CMP process without damaging and/or contaminating the layers of the semiconductor wafer.

Abstract: Interconnects in porous dielectric materials are coated with a SiC-containing material to inhibit moisture penetration and retention within the dielectric material. Specifically, SiC coatings doped with boron such as SiC(BN) show particularly good results as barrier layers for dielectric interconnects.

Abstract: A polishing fluid comprising a distributed organic phase and a continuous aqueous phase. The distributed phase has at least one complexing agent and the aqueous phase has abrasive particles dispersed therein. Reaction products generated during polishing interact with the complexing agent(s) to form organometallic complexes. Further disclosed is a polishing method, a semiconductor device and semiconductor device fabrication method utilizing the polishing fluid.

Abstract: A polishing pad formed from closed-cell elastomer foam includes a population of bubbles within the pad. As the pad wears due to polishing and the polishing surface recedes, the freshly formed polishing surface includes pores formed of the newly exposed bubbles. The pores receive and retain polishing slurry and aid in the chemical mechanical polishing process. Pad conditioning is not required because new pores are constantly being created at the pad surface as the surface recedes during polishing. The method for forming the polishing pad includes the injection of gas bubbles into the viscous elastomer material used to form the pad. Process conditions are chosen to maintain gas bubbles within the elastomer material during the curing and solidifying process steps.

Abstract: A chemical mechanical polishing (CMP) system includes a polishing device including a polishing article. The polishing device provides relative movement between the semiconductor wafer and the polishing article with a slurry therebetween. The slurry preferably includes abrasive particles and a photocatalyst to enhance oxidation of metal of the semiconductor wafer. The slurry may also include water and the photocatalyst is a mixed metal oxide for breaking down water into hydrogen and oxygen in the presence of light.

Abstract: A method an apparatus for making copper metallic interconnects for semiconductors having an oxide layer deposited in the copper in situ during the deposition of the copper within the via.

Abstract: A polishing fluid comprising a distributed organic phase and a continuous aqueous phase, each phase comprising at least one complexing agent. The aqueous phase also having abrasive particles dispersed therein. Reaction products generated during polishing interact with the aqueous phase complexing agent to form water soluble metallic complexes, the water soluble metallic complexes diffuse to an organic/water interface where they release complexing agent molecules in the aqueous phase and generate metal ions which interact with the organic phase complexing agent to form organometallic complexes. Further disclosed is a polishing method, a semiconductor device and semiconductor device fabrication method utilizing the polishing fluid.

Abstract: An improved colloidal slurry for chemical mechanical polishing and methods of polishing using the improved colloidal slurry.

Abstract: Tantalum and niobium aluminate mixed metal oxides may be made by a process comprising mixing a first metal compound selected from the group consisting of aluminum alkoxide, aluminum beta-diketonate, aluminum alkoxide beta-diketonate, and mixtures thereof with a second metal compound selected from the group consisting of niobium alkoxide, niobium beta-diketonate, niobium alkoxide beta-diketonate, tantalum alkoxide, tantalum beta-diketonate, tantalum alkoxide beta-diketonate, and mixtures thereof to provide a precursor and then hydrolyzing the mixture. The resulting mixed metal oxide may be used in a variety of components of integrated circuits.

Abstract: Tantalum and niobium aluminate mixed metal oxides may be made by a process comprising mixing a first metal compound selected from the group consisting of aluminum alkoxide, aluminum beta-diketonate, aluminum alkoxide beta-diketonate, and mixtures thereof with a second metal compound selected from the group consisting of niobium alkoxide, niobium beta-diketonate, niobium alkoxide beta-diketonate, tantalum alkoxide, tantalum beta-diketonate, tantalum alkoxide beta-diketonate, and mixtures thereof to provide a precursor and then hydrolyzing the mixture. The resulting mixed metal oxide may be used in a variety of components of integrated circuits.

Abstract: A polishing fluid comprising a distributed organic phase and a continuous aqueous phase. The distributed phase has at least one complexing agent and the aqueous phase has abrasive particles dispersed therein. Reaction products generated during polishing interact with the complexing agent(s) to form organometallic complexes. Further disclosed is a polishing method, a semiconductor device and semiconductor device fabrication method utilizing the polishing fluid.

Abstract: A polishing fluid comprising a distributed organic phase and a continuous aqueous phase, each phase comprising at least one complexing agent. The aqueous phase also having abrasive particles dispersed therein. Reaction products generated during polishing interact with the aqueous phase complexing agent to form water soluble metallic complexes, the water soluble metallic complexes diffuse to an organic/water interface where they release complexing agent molecules in the aqueous phase and generate metal ions which interact with the organic phase complexing agent to form organometallic complexes. Further disclosed is a polishing method, a semiconductor device and semiconductor device fabrication method utilizing the polishing fluid.

Abstract: An apparatus for determining endpoint in the chemical mechanical polishing of a metal film using an acidic slurry includes a hydrogen sensor which senses the amount of hydrogen vapor being produced as a result of the reaction between the metal film and the acidic slurry. When the concentration of hydrogen vapor in the reaction area drops, endpoint is attained and the polishing operation may be terminated or otherwise adjusted. Hydrogen sensing elements include a palladium gate MOS transistor, expandable plastics and a tungsten oxide film.