Abstract: A magnetoresistive element includes a first ferromagnetic layer having a first magnetization, the first magnetization having a first pattern when the magnetoresistive element is half-selected during a first data write, a second pattern when the magnetoresistive element is selected during a second data write, and a third pattern of residual magnetization, the first pattern being different from the second and third pattern, a second ferromagnetic layer having a second magnetization, and a nonmagnetic layer arranged between the first ferromagnetic layer and the second ferromagnetic layer and having a tunnel conductance changing dependent on a relative angle between the first magnetization and the second magnetization.

Abstract: The magnetic memory includes a plurality of memory cells, each memory cell including: at least one writing wire; at least one data storage portion, provided on at least one portion of an outer periphery of the writing wire, which comprises a ferromagnetic material whose magnetization direction can be inverted by causing a current to flow in the writing wire; and at least one magneto-resistance effect element, disposed in the vicinity of the data storage portion, which senses the magnetization direction of the data storage portion.

Abstract: A magnetic memory device includes a first write wiring which runs in a first direction, a second write wiring which runs in a second direction different from the first direction, and a magnetoresistive element which is arranged at an intersection between the first and second write wirings, has a fixed layer, a recording layer, and a magnetoresistive layer sandwiched between the fixed layer and the recording layer, and has an axis of easy magnetization obliquely with respect to the first and second directions, the recording layer including a first ferromagnetic layer, a second ferromagnetic layer, and a first nonmagnetic layer sandwiched between the first and second ferromagnetic layers, in which first magnetization of the first ferromagnetic layer and second magnetization of the second ferromagnetic layer are ferromagnetically coupled, and a ferro-coupling constant C of a ferromagnetic coupling is 0.0001 erg/cm2?C?0.2 erg/cm2.

Abstract: The number of read errors can be reduced, and a large read signal can be produced.

Abstract: A magneto-resistive element according to an aspect of the present invention includes a free layer whose magnetized state changes and a pinned layer whose magnetized state is fixed. The free layer comprises first and second ferromagnetic layers and a non-magnetic layer which is arranged between the first and second ferromagnetic layers. An intensity of exchange coupling between the first and second ferromagnetic layers is set so that an astroid curve in a hard axis direction opens.

Abstract: A magnetoresistive effect device includes a first ferromagnetic layer having a fixed magnetization direction and having magnetic moment ml per unit area. A nonmagnetic layer contacts with the first ferromagnetic layer and has an amplitude hi of roughness of an interface between the nonmagnetic layer and the first ferromagnetic layer. A second ferromagnetic layer contacts with the nonmagnetic layer, has a fixed magnetization direction, has magnetic moment m2 per unit area which is smaller than the magnetic moment m1, and has an amplitude h2 of roughness of an interface between the second ferromagnetic layer and the nonmagnetic layer. A barrier layer contacts with the second ferromagnetic layer, and has an amplitude h3, which is smaller than the amplitudes h1 and h2, of roughness of an interface between the barrier layer and the second ferromagnetic layer. A third ferromagnetic layer contacts with the barrier layer and has a variable magnetization direction.

Abstract: An imaging device comprises a select line, a first signal line crossing the select line, and a first pixel provided at a portion corresponding to a crossing portion of the select line and the first signal line, the first pixel comprising a first buffer layer formed on a substrate, a first bolometer film formed on the first buffer layer, made of a compound which undergoes metal-insulator transition, and generating a first temperature detection signal, a first switching element formed on the substrate, selected by a select signal from the select line, and supplying the first temperature detection signal to the first signal line, and a metal wiring connecting a top surface of the first bolometer film to the first switching element.

Abstract: A magnetoresistive effect element includes a nonmagnetic layer having mutually facing first and second surfaces. A reference layer is provided on the first surface and has a fixed magnetization direction. A magnetization variable layer is provided on the second surface, has variable magnetization direction, and has a planer shape including a rectangular part, a first projected part, and a second projected part. The rectangular part has mutually facing first and second longer sides and mutually facing first and second shorter sides. The first projected part projects from the first longer side at a position shifted from the center toward the first shorter side. The second projected part projects from the second longer side at a position shifted from the center toward the second shorter side.

Abstract: A magnetoresistive element includes a first magnetic layer which includes a first surface and a second surface and has a first standard electrode potential, a second magnetic layer, a barrier layer which is provided between the second magnetic layer and the first surface of the first magnetic layer, and a nonmagnetic cap layer which contacts the second surface of the first magnetic layer and is formed from an alloy of a first metal material and a second metal material, the first metal material having a second standard electrode potential lower than the first standard electrode potential, the second metal material having a third standard electrode potential higher than the first standard electrode potential.

Abstract: A magnetic memory device includes a magnetoresistive element and a first wiring layer. The magnetoresistive element includes a fixed layer, a recording layer, and a non-magnetic layer interposed therebetween. The first wiring layer extends in a first direction and generates a magnetic field for recording data in the magnetoresistive element. The recording layer includes a base portion extending in a second direction rotated from the first direction by an angle falling within a range of more than 0° to not more than 20°, and first and second projections projecting from the first and second sides of the base portion in a third direction perpendicular to the second direction. The third and fourth sides of the base portion are inclined with respect to the third direction in the same rotational direction as a rotational direction in which the second direction is rotated.

Abstract: An imaging device comprises a select line, a first signal line crossing the select line, and a first pixel provided at a portion corresponding to a crossing portion of the select line and the first signal line, the first pixel comprising a first buffer layer formed on a substrate, a first bolometer film formed on the first buffer layer, made of a compound which undergoes metal-insulator transition, and generating a first temperature detection signal, a first switching element formed on the substrate, selected by a select signal from the select line, and supplying the first temperature detection signal to the first signal line, and a metal wiring connecting a top surface of the first bolometer film to the first switching element.

Abstract: A magnetic memory device includes a first write wiring which runs in a first direction, a second write wiring which runs in a second direction different from the first direction, and a magnetoresistive element which is arranged at an intersection between the first and second write wirings, has a fixed layer, a recording layer, and a magnetoresistive layer sandwiched between the fixed layer and the recording layer, and has an axis of easy magnetization obliquely with respect to the first and second directions, the recording layer including a first ferromagnetic layer, a second ferromagnetic layer, and a first nonmagnetic layer sandwiched between the first and second ferromagnetic layers, in which first magnetization of the first ferromagnetic layer and second magnetization of the second ferromagnetic layer are ferromagnetically coupled, and a ferro-coupling constant C of a ferromagnetic coupling is 0.0001 erg/cm2?C?0.2 erg/cm2.

Abstract: A magnetoresistive effect device includes a first ferromagnetic layer having a fixed magnetization direction and having magnetic moment ml per unit area. A nonmagnetic layer contacts with the first ferromagnetic layer and has an amplitude hi of roughness of an interface between the nonmagnetic layer and the first ferromagnetic layer. A second ferromagnetic layer contacts with the nonmagnetic layer, has a fixed magnetization direction, has magnetic moment m2 per unit area which is smaller than the magnetic moment m1, and has an amplitude h2 of roughness of an interface between the second ferromagnetic layer and the nonmagnetic layer. A barrier layer contacts with the second ferromagnetic layer, and has an amplitude h3, which is smaller than the amplitudes h1 and h2, of roughness of an interface between the barrier layer and the second ferromagnetic layer. A third ferromagnetic layer contacts with the barrier layer and has a variable magnetization direction.

Abstract: The magnetic memory includes a plurality of memory cells, each memory cell including: at least one writing wire; at least one data storage portion, provided on at least one portion of an outer periphery of the writing wire, which comprises a ferromagnetic material whose magnetization direction can be inverted by causing a current to flow in the writing wire; and at least one magneto-resistance effect element, disposed in the vicinity of the data storage portion, which senses the magnetization direction of the data storage portion.

Abstract: A magnetoresistive element includes a first ferromagnetic layer having a first magnetization, the first magnetization having a first pattern when the magnetoresistive element is half-selected during a first data write, a second pattern when the magnetoresistive element is selected during a second data write, and a third pattern of residual magnetization, the first pattern being different from the second and third pattern, a second ferromagnetic layer having a second magnetization, and a nonmagnetic layer arranged between the first ferromagnetic layer and the second ferromagnetic layer and having a tunnel conductance changing dependent on a relative angle between the first magnetization and the second magnetization.

Abstract: An imaging device comprises a select line, a first signal line crossing the select line, and a first pixel provided at a portion corresponding to a crossing portion of the select line and the first signal line, the first pixel comprising a first buffer layer formed on a substrate, a first bolometer film formed on the first buffer layer, made of a compound which undergoes metal-insulator transition, and generating a first temperature detection signal, a first switching element formed on the substrate, selected by a select signal from the select line, and supplying the first temperature detection signal to the first signal line, and a metal wiring connecting a top surface of the first bolometer film to the first switching element.

Abstract: An imaging device comprises a select line, a first signal line crossing the select line, and a first pixel provided at a portion corresponding to a crossing portion of the select line and the first signal line, the first pixel comprising a first buffer layer formed on a substrate, a first bolometer film formed on the first buffer layer, made of a compound which undergoes metal-insulator transition, and generating a first temperature detection signal, a first switching element formed on the substrate, selected by a select signal from the select line, and supplying the first temperature detection signal to the first signal line, and a metal wiring connecting a top surface of the first bolometer film to the first switching element.

Abstract: The number of read errors can be reduced, and a large read signal can be produced.

Abstract: An imaging device comprises a select line, a first signal line crossing the select line, and a first pixel provided at a portion corresponding to a crossing portion of the select line and the first signal line, the first pixel comprising a first buffer layer formed on a substrate, a first bolometer film formed on the first buffer layer, made of a compound which undergoes metal-insulator transition, and generating a first temperature detection signal, a first switching element formed on the substrate, selected by a select signal from the select line, and supplying the first temperature detection signal to the first signal line, and a metal wiring connecting a top surface of the first bolometer film to the first switching element.

Abstract: The magnetic memory includes a plurality of memory cells, each memory cell including: at least one writing wire; at least one data storage portion, provided on at least one portion of an outer periphery of the writing wire, which comprises a ferromagnetic material whose magnetization direction can be inverted by causing a current to flow in the writing wire; and at least one magneto-resistance effect element, disposed in the vicinity of the data storage portion, which senses the magnetization direction of the data storage portion.