Abstract: A memory device includes gate electrode layers stacked on an upper surface of a substrate and each including a plurality of unit electrodes extending in a first direction, and a plurality of connecting electrodes connecting the unit electrodes to each other. The memory device also includes channel structures extending through the gate electrode layers in a direction perpendicular to the upper surface of the substrate, first common source lines extending in the first direction and interposed between the unit electrodes, and second common source lines extending in the first direction between the first common source lines and each having a first line and a second line separated from each other in the first direction by the connecting electrodes.

Abstract: Provided is a transparent solar cell including a first transparent electrode, a second transparent electrode, a light absorbing layer, a first color implementation layer, and a second implementation layer, wherein each of the first color implementation layer and the second implementation layer includes an insulation layer and a conductive layer. By using a double layer, it is possible to provide a colored transparent solar cell securing stability and durability and implementing colors on both sides.

Abstract: Provided is a method of manufacturing a semiconductor device. The method includes providing a substrate, forming uneven portions in a region of the substrate in which an electrode is to be formed, forming a precursor film formed of a two-dimensional material on the substrate on which the uneven portions are formed, forming a metal chalcogen film by performing a chalcogenation process on the formed precursor film, and forming the electrode on the formed metal chalcogen film.

Abstract: Provided are a solar cell and a method of manufacturing the same. The solar cell includes a substrate, a first electrode on the substrate, a second electrode on the first electrode, and at least one semiconductor layer interposed between the first and second electrodes, and a first connection layer interposed between the first electrode and the semiconductor layer and electrically connecting the first and second electrodes to each other. The first connection layer includes a plurality of two-dimensional layers vertically extending from a top surface of the first electrode to a bottom surface of the semiconductor layer. The two-dimensional layers include a metal compound.

Abstract: Provided is a thin film transistor. The thin film transistor includes a substrate, a channel part extending on the substrate in a first direction parallel to an upper surface of the substrate, source/drain electrodes connected to both ends of the channel part in the first direction, and a gate electrode spaced apart from the channel part in a second direction intersecting the first direction and parallel to the upper surface of the substrate. Each of the channel part, the source/drain electrodes, and the gate electrode is provided as a single layer.

Abstract: Provided is a memory device including a gate electrode, a first insulation layer on the gate electrode, a first conductive pattern and a second conductive pattern, which are spaced apart from each other on the first insulation layer, a channel pattern disposed on the first insulation layer to connect the first conductive pattern and the second conductive pattern, and an interface layer disposed between the channel pattern and the first insulation layer and having a hydrogen atom content ratio (atomic %) greater than that of the first insulation layer.

Abstract: The present disclosure relates to a cracking device and a deposition apparatus including the same, and more particularly includes a source supply part for supplying a source gas, a cracking part for decomposing the source gas supplied from the source supply part, a distribution part disposed between the source supply part and the cracking part and distributing the source gas to the cracking part; and a heating element for heating the cracking part. The cracking part extends in a first direction, the cracking part has a first width in a second direction crossing the first direction, the cracking part has a first height in a third direction perpendicular to the first and second directions, and the ratio of the first width to the first height is about 2-20.

Abstract: Provided is a transparent solar cell including a first transparent electrode, a second transparent electrode, a light absorbing layer, a first color implementation layer, and a second implementation layer, wherein each of the first color implementation layer and the second implementation layer includes an insulation layer and a conductive layer. By using a double layer, it is possible to provide a colored transparent solar cell securing stability and durability and implementing colors on both sides.

Abstract: Provided is a method for fabricating high-uniformity and high-quality metal chalcogenide thin films. The method for fabricating metal chalcogenide thin films may include forming a metal precursor thin film including a metal thin film and a chalcogen thin film disposed on the upper surface or lower surface of the metal thin film; and performing a chalcogenization process for providing a chalcogen source on the metal precursor thin film to form a first metal chalcogenide thin film.

Abstract: Provided is a method of manufacturing a semiconductor device. The method includes providing a substrate, forming uneven portions in a region of the substrate in which an electrode is to be formed, forming a precursor film formed of a two-dimensional material on the substrate on which the uneven portions are formed, forming a metal chalcogen film by performing a chalcogenation process on the formed precursor film, and forming the electrode on the formed metal chalcogen film.

Abstract: Provided is a thin film transistor. The thin film transistor includes a substrate, a channel part extending on the substrate in a first direction parallel to an upper surface of the substrate, source/drain electrodes connected to both ends of the channel part in the first direction, and a gate electrode spaced apart from the channel part in a second direction intersecting the first direction and parallel to the upper surface of the substrate. Each of the channel part, the source/drain electrodes, and the gate electrode is provided as a single layer.

Abstract: Provided are a solar cell and a method of manufacturing the same. The solar cell includes a substrate, a first electrode on the substrate, a second electrode on the first electrode, and at least one semiconductor layer interposed between the first and second electrodes, and a first connection layer interposed between the first electrode and the semiconductor layer and electrically connecting the first and second electrodes to each other. The first connection layer includes a plurality of two-dimensional layers vertically extending from a top surface of the first electrode to a bottom surface of the semiconductor layer. The two-dimensional layers include a metal compound.

Abstract: Provided is method of manufacturing a conductive film. The method includes forming a conductive film including a plurality of flakes on a substrate, wherein the conductive film is a semiconductor or a conductor, and forming a passivation region selectively on a boundary between the flakes adjacent to each other. The passivation region includes a metal compound selected from the group consisting of metal chalcogenide and transition metal chalcogenide. The forming of the passivation region includes providing a solution containing a first precursor including a cation of the metal compound and a second precursor including an anion of the metal compound on the conductive film. pH of the solution is between 7.0 and 10.0.

Abstract: Provided is a chemical sensor which includes an alignment frame that has an opening that passes through the inside of the alignment frame and includes first and second side portions that face each other with the opening therebetween and insulation portions disposed between the first and second side portions, a plurality of sensing fibers disposed in two-dimensions across the opening of the alignment frame so as to connect the first side portion and the second side portion, and a source pattern and a drain pattern connected to the first side portion and the second side portion of the alignment frame, respectively.

Abstract: Provided is an optically restorable semiconductor device including a gate electrode, a gate insulation film on the gate electrode, a photo-responsive semiconductor film on the gate insulation film, and an interface charge part disposed adjacent to an interface between the photo-responsive semiconductor film and the gate insulation film, wherein the interface charge part includes charge traps, and the interface charge part and the photo-responsive semiconductor film directly contact with each other.

Abstract: Disclosed are an electronic device and a method of fabricating the same. The method of fabricating an electronic device comprises providing on a substrate a channel layer including a two-dimensional material, providing a metal fiber layer on a first surface of a conductive layer, providing the metal fiber layer on the channel layer, and performing a thermal treatment process to form a junction layer where a portion of the metal fiber layer is covalently bonded to a portion of the channel layer.

Abstract: Provided is method of manufacturing a conductive film. The method includes forming a conductive film including a plurality of flakes on a substrate, wherein the conductive film is a semiconductor or a conductor, and forming a passivation region selectively on a boundary between the flakes adjacent to each other. The passivation region includes a metal compound selected from the group consisting of metal chalcogenide and transition metal chalcogenide. The forming of the passivation region includes providing a solution containing a first precursor including a cation of the metal compound and a second precursor including an anion of the metal compound on the conductive film. pH of the solution is between 7.0 and 10.0.

Abstract: An electro spinning apparatus according to embodiments of the inventive concept includes a nozzle unit discharging nano fiber on a substrate, and an alignment device having the substrate disposed thereon and aligning the nano fiber, wherein the alignment device includes a body and an angle adjustment unit adjusting an angle formed by a straight line connecting two electrodes disposed to face each other among the electrodes and the substrate.

Abstract: Provided is a method for fabricating high-uniformity and high-quality metal chalcogenide thin films. The method for fabricating metal chalcogenide thin films may include forming a metal precursor thin film including a metal thin film and a chalcogen thin film disposed on the upper surface or lower surface of the metal thin film; and performing a chalcogenization process for providing a chalcogen source on the metal precursor thin film to form a first metal chalcogenide thin film.

Abstract: Provided is a chemical sensor which includes an alignment frame that has an opening that passes through the inside of the alignment frame and includes first and second side portions that face each other with the opening therebetween and insulation portions disposed between the first and second side portions, a plurality of sensing fibers disposed in two-dimensions across the opening of the alignment frame so as to connect the first side portion and the second side portion, and a source pattern and a drain pattern connected to the first side portion and the second side portion of the alignment frame, respectively.