Abstract: Provided is the structure of a thin film solar cell. The structure of the thin film solar cell includes a first substrate, a first electrode provided on the first substrate, a p-type semiconductor layer provided on the first electrode, a first buffer layer provided on the p-type semiconductor layer, an optical absorption region provided on the first buffer layer, a second buffer layer provided on the optical absorption region, an n-type semiconductor layer provided on the second buffer layer, a second electrode provided on the n-type semiconductor layer, and a second substrate on the second electrode. The optical absorption region includes a silicon layer, a first layer on the silicon layer, and a second layer having a different energy band gap from the first layer, on the first layer.

Abstract: Provided is a thin film solar cell including a rear electrode formed on a substrate, a light absorbing layer formed on the rear electrode, a buffer layer formed on the light absorbing layer, and a front transparent electrode formed on the buffer layer. The buffer layer includes copper oxide.

Abstract: Provided is a method of fabricating an electronic device. The method according to the present inventive concept may include forming a lower electrode having a flat portion and protrusions on a substrate, forming an intermediate layer on the lower electrode, and forming an upper electrode on the intermediate layer. The forming of the lower electrode may include forming a conductive film by depositing a first metal on the substrate, and depositing a second metal on the conductive film to prepare an alloy of the first metal and the second metal.

Abstract: A thin film solar cell according to the inventive concept includes a back side electrode on a substrate, a light absorption layer on the back side electrode, a buffer layer on the light absorption layer, a front side transparent electrode on the buffer layer, a grid electrode partially formed on the front side transparent electrode and exposing a top surface of a portion of the front side transparent electrode, and an anti-reflection layer covering the exposed top surface of the front side transparent electrode. The buffer layer includes titanium oxide (TiOx).

Abstract: Provided are a method and circuit for controlling heat generation of a power transistor, in which the power transistor can be protected by preventing heat generation of the power transistor by using a metal-insulator transition (MIT) device that can function as a fuse and can be semi-permanently used.

Abstract: Provided is a thin film silicon solar cell. The thin film silicon solar cell includes a light absorbing layer, a front transparent electrode disposed on one surface of the light absorbing layer to emit light having a first color, and a rear transparent electrode disposed on the other surface of the light absorbing layer to emit light having a second color.

Abstract: Provided are a 3-terminal MIT switch which can easily control a discontinuous MIT jump and does not need a conventional gate insulating layer, a switching system including the 3-terminal MIT switch, and a method of controlling an MIT of the 3-terminal MIT switch. The 3-terminal MIT switch includes a 2-terminal MIT device, which generates discontinuous MIT in a transition voltage, an inlet electrode and an outlet electrode, which are respectively connected to each terminal of the 2-terminal MIT device, and a control electrode, which is connected to the inlet electrode and includes an external terminal separated from an external terminal of the inlet electrode, wherein an MIT of the 2-terminal MIT device is controlled according to a voltage or a current applied to the control electrode. The switching system includes the 3-terminal MIT switch, a voltage source connected to the inlet electrode, and a control source connected to the control electrode.

Abstract: Solar cells are provided. The solar cell may include a substrate, a first electrode on the substrate, a first light absorption layer disposed on the first electrode and including silicon containing oxygen, a second light absorption layer disposed on the first light absorption layer and including silicon containing germanium, and a second electrode on the second light absorption layer. The first light absorption layer may include a plurality of semiconductor layers which have oxygen-content ratios different from each other, respectively. The second light absorption layer may include a plurality of semiconductor layers which have germanium-content ratios different from each other, respectively.

Abstract: Provided is a transparent color solar cell, which includes a substrate, a first electrode layer disposed on the substrate, a transparent material layer including quantum dots having the same particle size, which absorb visible light provided from the sun through the first electrode layer and having a first wavelength region, and which selectively transmit visible light provided from the sun through the first electrode layer and having a second wavelength region, and a second electrode layer disposed on the transparent material layer.

Abstract: Provided are an abrupt MIT device with variable MIT temperature or voltage, an MIT sensor using the abrupt MIT device, and an alarm apparatus and a secondary battery anti-explosion circuit including the MIT sensor. The MIT device includes an abrupt MIT layer undergoing an abrupt MIT at a transition temperature or a transition voltage and at least two electrode layers contacting the abrupt MIT layer. The transition temperature or the transition voltage varies with at least one of factors including a voltage applied to the electrode layers, a temperature, an electromagnetic wave, a pressure, and a gas concentration that affect the abrupt MIT layer. The MIT sensor is a temperature sensor, an infrared sensor, an image sensor, a pressure sensor, a gas-concentration sensor, or a switch. The alarm apparatus includes the MIT sensor and an alarm-signaling unit connected in series with the MIT sensor.

Abstract: Provided is a solar cell module. The solar cell module includes a solar cell, a sealing layer configured to protect the solar cell, and a bonding layer disposed between the solar cell and the sealing layer. The bonding layer has adhesion to fix the sealing layer to the solar cell. When the sealing layer is repaired, the adhesion of the bonding layer is reduced by an external stimulation.

Abstract: Provided are fabricating methods of a solar cell capable of displaying a predetermined color. The method includes forming a first electrode on a substrate and forming a light-absorbing layer on the first electrode. The light-absorbing layer may have a composition ratio, a content of the amorphous portion, or an energy bandgap controlled to absorb a light with a predetermined wavelength. In addition, selective transmission layers may be formed on and below the light-absorbing layer to control the color displayed by the solar cell. Furthermore, a second electrode may be formed on the light-absorbing layer.

Abstract: Provided are thin-film solar cells and methods of fabricating the same. The solar cell may include a substrate and a cell comprising an amorphous layer with a continuously graded hydrogen content disposed on the substrate, a n-type semiconductor, an p-type semiconductor layer, a metal electrode adjacent to the n-type semiconductor and a transparent electrode adjacent to p-type semiconductor layers. The hydrogen content of the amorphous intrinsic semiconductor layer decreases in a continuous manner from a first interface, to which a light is incident, toward a second interface opposite to the first interface, and the first and second interfaces are two opposite surfaces of the amorphous intrinsic semiconductor layer being in contact with the p-type and n-type semiconductor layers, respectively.

Abstract: A thin film type varistor and a method of manufacturing the same are provided. The method includes: a depositing a first zinc oxide thin film at a low temperature through a sputtering method; and a forming a zinc oxide thin film for a varistor by treating the first zinc oxide thin film with heat at a low temperature in an environment in which an inert gas and oxygen are injected. Accordingly, it is possible to lower a processing temperature and simplify a manufacturing process while maintaining a varistor characteristic so as to be applied to a highly integrated circuit.

Abstract: Provided are a circuit for continuously measuring a discontinuous metal-insulator transition (MIT) of an MIT element and an MIT sensor using the circuit. The circuit comprises a to-be-measured object unit including the MIT element having a discontinuous MIT occurring at the transition voltage thereof, a power supply unit applying a predetermined pulse current or voltage signal to the to-be-measured object unit, a measurement unit measuring the discontinuous MIT of the MIT element, and a microprocessor controlling the power supply unit and the measurement unit. The discontinuous MIT measurement circuit continuously measures the discontinuous MIT of the MIT element, and thus it can be used as a sensor for sensing a variation in an external factor.

Abstract: Provided is an electro-luminescent device (ELD) including a metal-insulator transition (MIT) layer. The ELD includes: a substrate; a EL phosphor layer positioned on the substrate and comprising luminescent center ions generating light; the MIT layer disposed on a surface of the EL phosphor layer and being abruptly changed from an insulator to a metal according to a variation of a voltage; a first insulator adhered to the MIT layer to distribute a voltage applied from an external source; and a second insulator disposed on the other side of the EL phosphor layer.

Abstract: Provided is a solar cell. The solar cell includes: a light absorbing layer; a window layer consisting of a p-type copper oxynitride layer on the light absorbing layer; a rear electrode below the light absorbing layer; and a transparent electrode on the window layer.

Abstract: Provided embodiments are a thin film including a support material and nano particles having different density from that of the support material, and a method for manufacturing the same. Due to the density difference, the nano particles are intensively concentrated on an upper or lower part of the support material. The inventive concept also discloses a thin film capable of increasing surface roughness and a method for manufacturing the same. The thin film includes a support material, and particles contained therein. The particles may have lower density than that of the support material, and increase surface roughness at an upper part of the support material.

Abstract: Provided are an oscillatory circuit based on a metal-insulator transition (MIT) device that can generate a simple and very high oscillating frequency using the MIT device, and a method of driving the oscillatory circuit. The oscillatory circuit includes the MIT device that comprises an MIT thin film and an electrode thin film connected to the MIT thin film and in which an abrupt MIT is generated due to an MIT generating voltage, a resistor that is serially connected to the MIT device, an electrical power source limiting the maximum amount of an applied current and applying a direct current constant voltage to the MIT device, and a light source irradiating electromagnetic waves on the MIT device, wherein the oscillating properties are generated by irradiating the electromagnetic waves using the light source.

Abstract: Provided are an MIT device-based oscillation circuit including a power source, an MIT device and a variable resistor, in which a generation of an oscillation and an oscillation frequency are determined according to a voltage applied from the power source and a resistance of the variable resistor, and a method of adjusting the oscillation frequency of the oscillation circuit. The MIT device includes an MIT thin film and an electrode thin film connected to the MIT thin film, and generates a discontinuous MIT at an MIT generation voltage, the variable resistor is connected in series to the MIT device, and the power source applies a voltage or an electric current to the MIT device. The generation of an oscillation and an oscillation frequency are determined according to the voltage applied from the power source and the resistance of the variable resistor.