Abstract: Provided are an oscillatory circuit based on a metal-insulator transition (MIT) device that can generate a simple and very high oscillating frequency using the MIT device, and a method of driving the oscillatory circuit. The oscillatory circuit includes the MIT device that comprises an MIT thin film and an electrode thin film connected to the MIT thin film and in which an abrupt MIT is generated due to an MIT generating voltage, a resistor that is serially connected to the MIT device, an electric al power source limiting the maximum amount of an applied current and applying a direct current constant voltage to the MIT device, and a light source irradiating electromagnetic waves on the MIT device, wherein the oscillating properties are generated by irradiating the electromagnetic waves using the light source.

Abstract: Provided is a lithium secondary battery including a discharge unit capable of delaying or preventing a battery explosion. The lithium secondary battery includes a discharge unit disposed parallel to a battery body. The discharge unit includes a first electrode connected to a positive electrode of the battery body, a second electrode connected to a negative electrode of the battery body, and a discharge material film, disposed between the first electrode and the second electrode, inducing a abrupt discharge above a predetermined temperature. The discharge material film, e.g., a abrupt metal-insulator transition (MIT) material film can induce a abrupt discharge, thereby preventing or delaying a battery explosion.

Abstract: Provided are a method for antireflection treatment of a zinc oxide film and a method for manufacturing a solar cell using the same. In the anti-reflection treatment, a substrate is prepared, then a polycrystalline zinc oxide film is formed on the substrate. A surface of the polycrystalline zinc oxide film is textured. Here, the roughening of the surface of the polycrystalline zinc oxide film comprises wet-etching the polycrystalline zinc oxide film on the substrate using an etching solution mixed with nitric acid and hydrogen peroxide.

Abstract: An abrupt MIT (metal-insulator transition) device with parallel MIT material layers is provided. The abrupt MIT device includes a first electrode disposed on a certain region of a substrate, a second electrode disposed so as to be spaced a predetermined distance apart from the first electrode, and at least one MIT material layer electrically connecting the first electrode with the second electrode and having a width that allows the entire region of the MIT material layer to be transformed into a metal layer due to an MIT. Due to this configuration, deterioration of the MIT material layer, which is typically caused by current flowing through the MIT material layer, is less likely to occur.

Abstract: Provided are a temperature sensor using a metal-insulator transition (MIT) device subject to abrupt MIT at a specific temperature and an alarm including the temperature sensor. The abrupt MIT device includes an abrupt MIT thin film and at least two electrode thin films that contacts the abrupt MIT thin film. The abrupt MIT device generates abrupt metal-insulator transition at a specific transition temperature. The alarm includes a temperature sensor comprising an abrupt MIT device, and an alarm signaling device serially connected to the temperature sensor. Accordingly, the alarm can be manufactured to have a simple circuit and be of a small size by including the temperature sensor using an abrupt MIT device.

Abstract: Provided are a method for antireflection treatment of a zinc oxide film and a method for manufacturing a solar cell using the same. In the anti-reflection treatment, a substrate is prepared, then a polycrystalline zinc oxide film is formed on the substrate. A surface of the polycrystalline zinc oxide film is textured. Here, the roughening of the surface of the polycrystalline zinc oxide film comprises wet-etching the polycrystalline zinc oxide film on the substrate using an etching solution mixed with nitric acid and hydrogen peroxide.

Abstract: Provided are a low-voltage noise preventing circuit using an abrupt metal-insulator transition (MIT) device which can effectively remove a noise signal with a voltage less than a rated signal voltage. The abrupt MIT device is serially connected to the electrical and/or electronic system to be protected from the noise signal, and is subject to abrupt MIT at a predetermined voltage. Accordingly, low-voltage noise can be effectively removed.

Abstract: Provided is a solar cell. The solar cell includes a photovoltaic conversion device having first surface and the second surface on the opposite side, a first electrode connected to the first surface, a second electrode connected to the second surface, and an alkaline metal containing layer contacting one of the first and second electrodes.

Abstract: Provided are a MIT device self-heating preventive-circuit that can solve a self-heating problem of a MIT device and a method of manufacturing a MIT device self-heating preventive-circuit integrated device. The MIT device self-heating preventive-circuit includes a MIT device that generates an abrupt MIT at a temperature equal to or greater than a critical temperature and is connected to a current driving device to control the flow of current in the current driving device, a transistor that is connected to the MIT device to control the self-heating of the MIT device after generating the MIT in the MIT device, and a resistor connected to the MIT device and the transistor.

Abstract: Provided are a method and circuit for controlling heat generation of a power transistor, in which the power transistor can be protected by preventing heat generation of the power transistor by using a metal-insulator transition (MIT) device that can function as a fuse and can be semi-permanently used.

Abstract: Provided are a high current control circuit including a metal-insulator transition (MIT) device, and a system including the high current control circuit so that a high current can be controlled and switched by the small-size high current control circuit, and a heat generation problem can be solved. The high current control circuit includes the MIT device connected to a current driving device and undergoing an abrupt MIT at a predetermined transition voltage; and a switching control transistor connected between the current driving device and the MIT device and controlling on-off switching of the MIT device. By including the metal-insulator transition (MIT) device, the high current control circuit switches a high current that is input to or output from the current driving device. Also, the MIT device constitutes a MIT-TR composite device with a heat-preventing transistor which prevents heat generation and is connected to the MIT device.

Abstract: Provided is an electro-luminescent device (ELD) including a metal-insulator transition (MIT) layer. The ELD includes: a substrate; a EL phosphor layer positioned on the substrate and comprising luminescent center ions generating light; the MIT layer disposed on a surface of the EL phosphor layer and being abruptly changed from an insulator to a metal according to a variation of a voltage; a first insulator adhered to the MIT layer to distribute a voltage applied from an external source; and a second insulator disposed on the other side of the EL phosphor layer.

Abstract: Provided are a 3-terminal MIT switch which can easily control a discontinuous MIT jump and does not need a conventipnal gate insulating layer, a switching system including the 3-terminal MIT switch, and a method of controlling an MIT of the 3-terminal MIT switch. The 3-terminal MIT switch includes a 2-terminal MIT device, which generates discontinuous MIT in a transition voltage, an inlet electrode (200) and an outlet electrode (300), which are respectively connected to each terminal of the 2-terminal MIT device, and a control electrode (400), which is connected to the inlet electrode and includes an external terminal separated from an external terminal of the inlet electrode, wherein an MIT of the 2-terminal MIT device is controlled according to a voltage or a current applied to the control electrode. The switching system includes the 3-terminal MIT switch, a voltage source connected to the inlet electrode, and a control source connected to the control electrode.

Abstract: Provided is a transparent solar cell. The transparent solar cell includes a transparent substrate, a selective transparent reflection layer, a first electrode, a photovoltaic conversion layer and a second electrode. The selective transparent reflection layer includes a first surface contacting the transparent substrate, and the second surface facing the first surface. The first electrode, the photovoltaic conversion layer and the second electrode are sequentially stacked on the second surface of the selective transparent reflection layer. The selective transparent reflection layer transmits at least a portion of wavelength of a visible ray and reflects an infrared ray.

Abstract: A thin film type varistor and a method of manufacturing the same are provided. The method includes: a depositing a first zinc oxide thin film at a low temperature through a sputtering method; and a forming a zinc oxide thin film for a varistor by treating the first zinc oxide thin film with heat at a low temperature in an environment in which an inert gas and oxygen are injected. Accordingly, it is possible to lower a processing temperature and simplify a manufacturing process while maintaining a varistor characteristic so as to be applied to a highly integrated circuit.

Abstract: Provided are a memory device that undergoes no structural phase change, maintains a uniform thin film, and can perform a high-speed switching operation, and a method of operating the same. The memory device includes a substrate, an abrupt MIT material layer, and a plurality of electrodes. The abrupt MIT material layer is disposed on the substrate and undergoes an abrupt metal-insulator transition by an energy change between electrons. The plurality of electrodes are brought into contact with the abrupt MIT material layer and are melted by heat to form a conductive path on the abrupt MIT material layer.

Abstract: Provided is a logic circuit comprising a metal-insulator transition (MIT) device, including: an MIT device unit including an MIT thin film, an electrode thin film contacting the MIT thin film, and at least one MIT device undergoing a discontinuous MIT at a transition voltage VT; a power source unit including at least one power source applying power to the MIT device; and at least one resistor connected to the MIT device, wherein a logic operation is performed on a signal through the power source to output the result of the logic operation as an output signal.

Abstract: A photo-gating switch system comprising a photosensitive device formed on a substrate is provided. The photosensitive device may comprise a photosensitive layer and electrodes formed at both ends of the photosensitive layer. A light source irradiating light to the photosensitive device is integrated beneath the surface of the substrate.

Abstract: Provided are an antireflection film of a solar cell, the solar cell, and a method of manufacturing the solar cell. The antireflection film of a solar cell includes a low dielectric film formed of a material having a first dielectric constant; a high dielectric film formed of a material having a second dielectric constant higher than the first dielectric constant; and a gradient layer disposed between the low dielectric film and the high dielectric film, and formed so as to gradually increase a dielectric constant from the first dielectric constant to the second dielectric constant. According to the present invention, light absorption efficiency of a solar cell can be increased.

Abstract: Provided are a circuit for continuously measuring a discontinuous metal-insulator transition (MIT) of an MIT element and an MIT sensor using the circuit. The circuit comprises a to-be-measured object unit including the MIT element having a discontinuous MIT occurring at the transition voltage thereof, a power supply unit applying a predetermined pulse current or voltage signal to the to-be-measured object unit, a measurement unit measuring the discontinuous MIT of the MIT element, and a microprocessor controlling the power supply unit and the measurement unit. The discontinuous MIT measurement circuit continuously measures the discontinuous MIT of the MIT element, and thus it can be used as a sensor for sensing a variation in an external factor.