Patents by Inventor Sundar Ramamurthy
Sundar Ramamurthy has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 9595459Abstract: A method and apparatus are provided for treating a substrate. The substrate is positioned on a support in a thermal treatment chamber. Electromagnetic radiation is directed toward the substrate to anneal a portion of the substrate. Other electromagnetic radiation is directed toward the substrate to preheat a portion of the substrate. The preheating reduces thermal stresses at the boundary between the preheat region and the anneal region. Any number of anneal and preheat regions are contemplated, with varying shapes and temperature profiles, as needed for specific embodiments. Any convenient source of electromagnetic radiation may be used, such as lasers, heat lamps, white light lamps, or flash lamps.Type: GrantFiled: August 21, 2015Date of Patent: March 14, 2017Assignee: APPLIED MATERIALS, INC.Inventors: Stephen Moffatt, Abhilash J. Mayur, Sundar Ramamurthy, Joseph M. Ranish, Aaron Muir Hunter
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Publication number: 20160372371Abstract: Embodiments described herein generally relate to methods for forming silicide materials. Silicide materials formed according to the embodiments described herein may be utilized as contact and/or interconnect structures and may provide advantages over conventional silicide formation methods. In one embodiment, a one or more transition metal and aluminum layers may be deposited on a silicon containing substrate and a transition metal layer may be deposited on the one or more transition metal and aluminum layers. An annealing process may be performed to form a metal silicide material.Type: ApplicationFiled: June 22, 2016Publication date: December 22, 2016Inventors: Kaushal K. SINGH, Er-Xuan PING, Xianmin TANG, Sundar RAMAMURTHY, Randhir THAKUR
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Patent number: 9431278Abstract: Apparatus and methods of thermally treating a wafer or other substrate, such as rapid thermal processing (RTP) apparatus and methods are disclosed. An array of radiant lamps directs radiation to the back side of a wafer to heat the wafer. In one or more embodiments, the front side of the wafer on which the patterned integrated circuits are being formed faces a radiant reflector. In one or more embodiments, the wafer is thermally monitored for temperature and reflectivity from the side of the reflector.Type: GrantFiled: August 18, 2008Date of Patent: August 30, 2016Assignee: Applied Materials, Inc.Inventors: Wolfgang Aderhold, Sundar Ramamurthy, Aaron Hunter
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Patent number: 9373516Abstract: Provided are methods and apparatus for functionalizing a substrate surface used as the channel in a gate stack. Silicon, germanium and silicon germanium substrates surfaces are functionalized with one or more of sulfur and selenium by plasma processing.Type: GrantFiled: August 30, 2013Date of Patent: June 21, 2016Assignee: Applied Materials, Inc.Inventors: Khaled Z. Ahmed, Steven Hung, Kaushal K. Singh, Sundar Ramamurthy
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Publication number: 20150357215Abstract: A method and apparatus are provided for treating a substrate. The substrate is positioned on a support in a thermal treatment chamber. Electromagnetic radiation is directed toward the substrate to anneal a portion of the substrate. Other electromagnetic radiation is directed toward the substrate to preheat a portion of the substrate. The preheating reduces thermal stresses at the boundary between the preheat region and the anneal region. Any number of anneal and preheat regions are contemplated, with varying shapes and temperature profiles, as needed for specific embodiments. Any convenient source of electromagnetic radiation may be used, such as lasers, heat lamps, white light lamps, or flash lamps.Type: ApplicationFiled: August 21, 2015Publication date: December 10, 2015Inventors: STEPHEN MOFFATT, Abhilash J. MAYUR, Sundar RAMAMURTHY, Joseph M. RANISH, Aaron Muir HUNTER
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Patent number: 9114479Abstract: A method and apparatus are provided for treating a substrate. The substrate is positioned on a support in a thermal treatment chamber. Electromagnetic radiation is directed toward the substrate to anneal a portion of the substrate. Other electromagnetic radiation is directed toward the substrate to preheat a portion of the substrate. The preheating reduces thermal stresses at the boundary between the preheat region and the anneal region. Any number of anneal and preheat regions are contemplated, with varying shapes and temperature profiles, as needed for specific embodiments. Any convenient source of electromagnetic radiation may be used, such as lasers, heat lamps, white light lamps, or flash lamps.Type: GrantFiled: March 28, 2014Date of Patent: August 25, 2015Assignee: APPLIED MATERIALS, INC.Inventors: Stephen Moffatt, Abhilash J. Mayur, Sundar Ramamurthy, Joseph Ranish, Aaron Hunter
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Patent number: 8888916Abstract: Embodiments of the present invention provide apparatus and method for improving gas distribution during thermal processing. One embodiment of the present invention provides an apparatus for processing a substrate comprising a chamber body defining a processing volume, a substrate support disposed in the processing volume, wherein the substrate support is configured to support and rotate the substrate, a gas inlet assembly coupled to an inlet of the chamber body and configured to provide a first gas flow to the processing volume, and an exhaust assembly coupled to an outlet of the chamber body, wherein the gas inlet assembly and the exhaust assembly are disposed on opposite sides of the chamber body, and the exhaust assembly defines an exhaust volume configured to extend the processing volume.Type: GrantFiled: November 22, 2013Date of Patent: November 18, 2014Assignee: Applied Materials, Inc.Inventors: Ming-Kuei (Michael) Tseng, Norman L. Tam, Yoshitaka Yokota, Agus S. Tjandra, Robert Navasca, Mehran Behdjat, Sundar Ramamurthy, Kedarnath Sangam, Alexander N. Lerner
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Patent number: 8856229Abstract: Methods, systems and computer program products are provided for social networking. In one method, a network builder receives a digital object from the user. The digital object contains information associated with the user. The network builder extracts the information associated with the user from the digital object. The network builder further access the strength of relationships between the user and a plurality of other users, each associated with one or more social networks. The relationships strength is extracted based at least in part on the extracted information. The network builder then adds the user to one or more social networks based on the information associated with the user and the strength of the relationships between the user and the plurality of other users.Type: GrantFiled: January 26, 2010Date of Patent: October 7, 2014Assignee: Yahoo! Inc.Inventors: Shyam Sundar Ramamurthy, Manish Satyapal Gupta, Himanshu Verma, Shyam Krishnamurthy, Srinivas Devarakonda
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Publication number: 20140209583Abstract: A method and apparatus are provided for treating a substrate. The substrate is positioned on a support in a thermal treatment chamber. Electromagnetic radiation is directed toward the substrate to anneal a portion of the substrate. Other electromagnetic radiation is directed toward the substrate to preheat a portion of the substrate. The preheating reduces thermal stresses at the boundary between the preheat region and the anneal region. Any number of anneal and preheat regions are contemplated, with varying shapes and temperature profiles, as needed for specific embodiments. Any convenient source of electromagnetic radiation may be used, such as lasers, heat lamps, white light lamps, or flash lamps.Type: ApplicationFiled: March 28, 2014Publication date: July 31, 2014Applicant: Applied Materials, Inc.Inventors: Stephen MOFFATT, Abhilash J. MAYUR, Sundar RAMAMURTHY, Joseph RANISH, Aaron HUNTER
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Publication number: 20140079376Abstract: Embodiments of the present invention provide apparatus and method for improving gas distribution during thermal processing. One embodiment of the present invention provides an apparatus for processing a substrate comprising a chamber body defining a processing volume, a substrate support disposed in the processing volume, wherein the substrate support is configured to support and rotate the substrate, a gas inlet assembly coupled to an inlet of the chamber body and configured to provide a first gas flow to the processing volume, and an exhaust assembly coupled to an outlet of the chamber body, wherein the gas inlet assembly and the exhaust assembly are disposed on opposite sides of the chamber body, and the exhaust assembly defines an exhaust volume configured to extend the processing volume.Type: ApplicationFiled: November 22, 2013Publication date: March 20, 2014Applicant: APPLIED MATERIALS, INC.Inventors: Ming-Kuei (Michael) TSENG, Norman L. TAM, Yoshitaka YOKOTA, Agus S. TJANDRA, Robert NAVASCA, Mehran BEHDJAT, Sundar RAMAMURTHY, Kedarnath SANGAM, Alexander N. LERNER
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Publication number: 20140065798Abstract: Provided are methods and apparatus for functionalizing a substrate surface used as the channel in a gate stack. Silicon, germanium and silicon germanium substrates surfaces are functionalized with one or more of sulfur and selenium by plasma processing.Type: ApplicationFiled: August 30, 2013Publication date: March 6, 2014Inventors: Khaled Z. Ahmed, Steven Hung, Kaushal K. Singh, Sundar Ramamurthy
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Patent number: 8658945Abstract: A apparatus and method of thermally treating a wafer or other substrate, such as rapid thermal processing (RTP). An array of radiant lamps directs radiation to the back side of a wafer to heat the wafer. The front side of the wafer on which the patterned integrated circuits are being formed faces a radiant reflector. The wafer is thermally monitored for temperature and reflectivity from the side of the reflector. When the lamps are above the wafer, an edge ring supports the wafer in its edge exclusion zone. Alternatively, a reactor includes upwardly directed lamps and a reflector above and facing the front side of the wafer.Type: GrantFiled: February 27, 2004Date of Patent: February 25, 2014Assignee: Applied Materials, Inc.Inventors: Wolfgang Aderhold, Sundar Ramamurthy, Aaron Hunter
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Publication number: 20140003800Abstract: A method and apparatus for rapid thermal annealing comprising a plurality of lamps affixed to a lid of the chamber that provide at least one wavelength of light, a laser source extending into the chamber, a substrate support positioned within a base of the chamber, an edge ring affixed to the substrate support, and a gas distribution assembly in communication with the lid and the base of the chamber. A method and apparatus for rapid thermal annealing comprising a plurality of lamps comprising regional control of the lamps and a cooling gas distribution system affixed to a lid of the chamber, a heated substrate support with magnetic levitation extending through a base of the chamber, an edge ring affixed to the substrate support, and a gas distribution assembly in communication with the lid and the base of the chamber.Type: ApplicationFiled: August 30, 2013Publication date: January 2, 2014Inventors: Sundar RAMAMURTHY, Andreas G. HEGEDUS, Randhir P.S. THAKUR
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Patent number: 8608853Abstract: Embodiments of the present invention provide apparatus and method for improving gas distribution during thermal processing. One embodiment of the present invention provides an apparatus for processing a substrate comprising a chamber body defining a processing volume, a substrate support disposed in the processing volume, wherein the substrate support is configured to support and rotate the substrate, a gas inlet assembly coupled to an inlet of the chamber body and configured to provide a first gas flow to the processing volume, and an exhaust assembly coupled to an outlet of the chamber body, wherein the gas inlet assembly and the exhaust assembly are disposed on opposite sides of the chamber body, and the exhaust assembly defines an exhaust volume configured to extend the processing volume.Type: GrantFiled: November 15, 2011Date of Patent: December 17, 2013Assignee: Applied Materials, Inc.Inventors: Ming-Kuei (Michael) Tseng, Norman Tam, Yoshitaka Yokota, Agus Tjandra, Robert Navasca, Mehran Behdjat, Sundar Ramamurthy, Kedarnath Sangam, Alexander N. Lerner
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Patent number: 8536492Abstract: A method and apparatus for rapid thermal annealing comprising a plurality of lamps affixed to a lid of the chamber that provide at least one wavelength of light, a laser source extending into the chamber, a substrate support positioned within a base of the chamber, an edge ring affixed to the substrate support, and a gas distribution assembly in communication with the lid and the base of the chamber. A method and apparatus for rapid thermal annealing comprising a plurality of lamps comprising regional control of the lamps and a cooling gas distribution system affixed to a lid of the chamber, a heated substrate support with magnetic levitation extending through a base of the chamber, an edge ring affixed to the substrate support, and a gas distribution assembly in communication with the lid and the base of the chamber.Type: GrantFiled: July 22, 2005Date of Patent: September 17, 2013Assignee: Applied Materials, Inc.Inventors: Sundar Ramamurthy, Andreas G. Hegedus, Randhir Thakur
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Patent number: 8497193Abstract: A method and apparatus for oxidizing materials used in semiconductor integrated circuits, for example, for oxidizing silicon to form a dielectric gate. An ozonator is capable of producing a stream of least 70% ozone. The ozone passes into an RTP chamber through a water-cooled injector projecting into the chamber. Other gases such as hydrogen to increase oxidation rate, diluent gas such as nitrogen or O2, enter the chamber through another inlet. The chamber is maintained at a low pressure below 20 Torr and the substrate is advantageously maintained at a temperature less than 800° C. Alternatively, the oxidation may be performed in an LPCVD chamber including a pedestal heater and a showerhead gas injector in opposition to the pedestal.Type: GrantFiled: June 21, 2011Date of Patent: July 30, 2013Assignee: Applied Materials, Inc.Inventors: Yoshitaka Yokota, Sundar Ramamurthy, Vedapuram Achutharaman, Cory Czarnik, Mehran Behdjat, Christopher Olsen
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Patent number: 8409353Abstract: A method and apparatus for oxidizing materials used in semiconductor integrated circuits, for example, for oxidizing silicon to form a dielectric gate. An ozonator is capable of producing a stream of least 70% ozone. The ozone passes into an RTP chamber through a water-cooled injector projecting into the chamber. Other gases such as hydrogen to increase oxidation rate, diluent gas such as nitrogen or O2, enter the chamber through another inlet. The chamber is maintained at a low pressure below 20 Torr and the substrate is advantageously maintained at a temperature less than 800° C. Alternatively, the oxidation may be performed in an LPCVD chamber including a pedestal heater and a showerhead gas injector in opposition to the pedestal.Type: GrantFiled: October 20, 2011Date of Patent: April 2, 2013Assignee: Applied Materials, Inc.Inventors: Yoshitaka Yokota, Sundar Ramamurthy, Vedapuram Achutharaman, Cory Czarnik, Mehran Behdjat, Christopher Olsen
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Patent number: 8314369Abstract: A method and apparatus are provided for treating a substrate. The substrate is positioned on a support in a thermal treatment chamber. Electromagnetic radiation is directed toward the substrate to anneal a portion of the substrate. Other electromagnetic radiation is directed toward the substrate to preheat a portion of the substrate. The preheating reduces thermal stresses at the boundary between the preheat region and the anneal region. Any number of anneal and preheat regions are contemplated, with varying shapes and temperature profiles, as needed for specific embodiments. Any convenient source of electromagnetic radiation may be used, such as lasers, heat lamps, white light lamps, or flash lamps.Type: GrantFiled: September 17, 2008Date of Patent: November 20, 2012Assignee: Applied Materials, Inc.Inventors: Stephen Moffatt, Abhilash J. Mayur, Sundar Ramamurthy, Joseph Ranish, Aaron Hunter
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Publication number: 20120222618Abstract: Methods and apparatus for processing semiconductor substrates are described. A processing chamber includes a substrate support with an in-situ plasma source, which may be an inductive, capacitive, microwave, or millimeter wave source, facing the substrate support and a radiant heat source, which may be a bank of thermal lamps, spaced apart from the substrate support. The support may be between the in-situ plasma source and the radiant heat source, and may rotate. A method or processing a substrate includes forming an oxide layer by exposing the substrate to a plasma generated in a process chamber, performing a plasma nitridation process on the substrate in the chamber, thermally treating the substrate using a radiant heat source disposed in the chamber while exposing the substrate to oxygen radicals formed outside the chamber, and forming an electrode by exposing the substrate to a plasma generated in the chamber.Type: ApplicationFiled: July 28, 2011Publication date: September 6, 2012Applicant: APPLIED MATERIALS, INC.Inventors: Christopher Olsen, Canfeng Lai, Sundar Ramamurthy, Johanes S. Swenberg, Wei Liu
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Publication number: 20120088356Abstract: An integrated platform for processing substrates, comprising: a vacuum substrate transfer chamber; a doping chamber coupled to the vacuum substrate transfer chamber, the doping chamber configured to implant or deposit dopant elements in or on a surface of a substrate; a dopant activation chamber coupled to the vacuum substrate transfer chamber, the dopant activation chamber configured to anneal the substrate and activate the dopant elements; and a controller configured to control the integrated platform, the controller comprising a computer readable media having instructions stored thereon that, when executed by the controller, causes the integrated platform to perform a method, the method comprising: doping a substrate with one or more dopant elements in the doping chamber; transferring the substrate under vacuum to the dopant activation chamber; and annealing the substrate in the dopant activation chamber to activate the dopant elements.Type: ApplicationFiled: September 7, 2011Publication date: April 12, 2012Applicant: APPLIED MATERIALS, INC.Inventors: KARTIK SANTHANAM, MARTIN A. HILKENE, MATTHEW D. SCOTNEY-CASTLE, PETER I. PORSHNEV, SWAMINATHAN SRINIVASAN, SUNDAR RAMAMURTHY