Abstract: A semiconductor device structure is provided. The semiconductor device structure includes a fin structure protruding from a semiconductor substrate. The fin structure includes a first portion and an overlying second portion. The first portion is formed of a material that is the same as that of the semiconductor substrate and different from that of the second portion. The semiconductor device structure also includes a liner structure and an isolation feature. The liner structure includes a carbon-doped silicon oxide film covering the semiconductor substrate and the first portion of the first fin structure and a nitrogen-containing film over the carbon-doped silicon oxide film. The isolation feature is over the nitrogen-containing film and surrounded by the liner structure.

Abstract: The present disclosure describes a method of forming a dielectric layer or a dielectric stack on a photoresist layer while minimizing or avoiding damage to the photoresist. In addition, the dielectric layer or dielectric stack can till high-aspect ratio openings and can be removed with etching. The dielectric layer or dielectric stack can be deposited with a conformal, low-temperature chemical vapor deposition process or a conformal, low-temperature atomic layer deposition process that utilizes a number of precursors and plasmas or reactant gases.

Abstract: The present disclosure describes a method of forming a dielectric layer or a dielectric stack on a photoresist layer while minimizing or avoiding damage to the photoresist. In addition, the dielectric layer or dielectric stack can till high-aspect ratio openings and can be removed with etching. The dielectric layer or dielectric stack can be deposited with a conformal, low-temperature chemical vapor deposition process or a conformal, low-temperature atomic layer deposition process that utilizes a number of precursors and plasmas or reactant gases.

Abstract: This invention provides a method for manufacturing porous oxide electrode layer, comprising: preparing an electrode slurry containing an electrically conductive oxide material powder, a dispersant, water and a moisture agent; spin coating the electrode slurry on a surface of a thin electrolyte or a porous substrate and simultaneously controlling the thickness and uniformity of the electrode layer on the fine electrolyte or the porous substrate; and calcining the electrode layer on the fine electrolyte or the porous substrate to form a porous electrode.

Abstract: An indium oxide-based particle is provided. The indium oxide-based particle has a mono-dispersive and spherical non-crystalline structure (spherical morphology with amorphous phase). The diameter of particle is ranged between 0.10 ?m and 0.70 ?m, and the content of an indium oxide is ranged between 10.0 percent by mass and 99.9 percent by mass. The indium oxide-based particle is generated by the precursor with indium ion reacting with alpha hydroxyl acid in an aqueous solution with alkali-modifier additive at a constant temperature. The indium-oxide based particle can be further calcinated as a crystalline indium oxide particle.

Abstract: This invention discloses a kind of cerium-based oxide fiber and its fabricating method. The cerium-based hydrate fiber can be synthesized by aging under the boiling point of water for 10 hours to 50 hours by the addition of a chemical modifier. The fibers show a diameter of submicron to micron size, and the aspect ratio is greater than 100. The hydrate fibers can transform to oxide fiber after calcination at high temperature.

Abstract: An indium oxide-based particle is provided. The indium oxide-based particle has a mono-dispersive and spherical non-crystalline structure (spherical morphology with amorphous phase). The diameter of particle is ranged between 0.10 ?m and 0.70 ?m, and the content of an indium oxide is ranged between 10.0 percent by mass and 99.9 percent by mass. The indium oxide-based particle is generated by the precursor with indium ion reacting with alpha hydroxyl acid in an aqueous solution with alkali-modifier additive at a constant temperature. The indium-oxide based particle can be further calcinated as a crystalline indium oxide particle.

Abstract: This invention discloses a kind of cerium-based oxide fiber and its fabricating method. The cerium-based hydrate fiber can be synthesized by aging under the boiling point of water for 10 hours to 50 hours by the addition of a chemical modifier. The fibers show a diameter of submicron to micron size, and the aspect ratio is greater than 100. The hydrate fibers can transform to oxide fiber after calcination at high temperature.