Abstract: In an embodiment, a method includes: stacking a plurality of first dies to form a device stack; revealing testing pads of a topmost die of the device stack; testing the device stack using the testing pads of the topmost die; and after testing the device stack, forming bonding pads in the topmost die, the bonding pads being different from the testing pads.

Abstract: A semiconductor package includes a first semiconductor die, a second semiconductor die and a plurality of bumps. The first semiconductor die has a front side and a backside opposite to each other. The second semiconductor die is disposed at the backside of the first semiconductor die and electrically connected to first semiconductor die. The plurality of bumps is disposed at the front side of the first semiconductor die and physically connects first die pads of the first semiconductor die. A total width of the first semiconductor die may be less than a total width of the second semiconductor die.

Abstract: In an embodiment, a device includes: a first integrated circuit die; a second integrated circuit die bonded to the first integrated circuit die in a face-to-back manner; a dummy semiconductor feature adjacent the second integrated circuit die and bonded to the first integrated circuit die; a support substrate attached to the dummy semiconductor feature and the second integrated circuit die; and a passivation layer extending along a top surface of the support substrate, an outer sidewall of the dummy semiconductor feature, an outer sidewall of the first integrated circuit die, and a top surface of the first integrated circuit die.

Abstract: A package structure and method of manufacturing is provided, whereby heat dissipating features are provided for heat dissipation. Heat dissipating features include conductive vias formed in a die stack, thermal chips, and thermal metal bulk, which can be bonded to a wafer level device. Hybrid bonding including chip to chip, chip to wafer, and wafer to wafer provides thermal conductivity without having to traverse a bonding material, such as a eutectic material. Plasma dicing the package structure can provide a smooth sidewall profile for interfacing with a thermal interface material.

Abstract: A package structure includes a plurality of stacked die units and an insulating encapsulant. The plurality of stacked die units is stacked on top of one another, where each of the plurality of stacked die units include a first semiconductor die, a first bonding chip. The first semiconductor die has a plurality of first bonding pads. The first bonding chip is stacked on the first semiconductor die and has a plurality of first bonding structure. The plurality of first bonding structures is bonded to the plurality of first bonding pads through hybrid bonding. The insulating encapsulant is encapsulating the plurality of stacked die units.

Abstract: A 3DIC structure includes a die, a conductive terminal, and a dielectric structure. The die is bonded to a carrier through a bonding film. The conductive terminal is disposed over and electrically connected to the die. The dielectric structure comprises a first dielectric layer and a second dielectric layer. The first dielectric layer is disposed laterally aside the die. The second dielectric layer is disposed between the first dielectric layer and the bonding film, and between the die and the boding film. A second edge of the second dielectric layer is more flat than a first edge of the first dielectric layer.

Abstract: A semiconductor structure and a manufacturing method thereof are provided. The semiconductor structure includes first semiconductor dies spaced apart from one another, second semiconductor dies stacked upon the first semiconductor dies with a one-to-one correspondence and electrically coupled to the first semiconductor dies, a first composite structure laterally interposed between two first semiconductor dies, a second composite structure laterally interposed between two second semiconductor dies, and a support substrate bonded to the second semiconductor dies and the second composite structure. The first composite structure includes a first material layer adjoining sidewalls of the two first semiconductor dies and a second material layer connected to and different from the first material layer. The second composite structure includes a third material layer adjoining sidewalls of the two second semiconductor dies and a fourth material layer connected to and different from the third material layer.

Abstract: A semiconductor structure includes a first die, a dielectric layer, a second interconnection structure, a second conductive pad and a conductive feature. The first die includes a first interconnection structure over a first substrate and a first conductive pad disposed on and electrically connected to the first interconnection structure. The first conductive pad has a probe mark on a surface thereof. The dielectric layer laterally warps around the first die. The second interconnection structure is disposed on the first die and the dielectric layer, the second interconnection structure includes a conductive via landing on the first conductive pad of the first die, and the conductive via is spaced apart from the first probe mark. The second conductive pad is disposed on and electrically connected to the second interconnection structure. The conductive feature is disposed on the second conductive pad.

Abstract: A package includes a semiconductor carrier, a first die, a second die, a redistribution structure, and an electron transmission path. The first die is disposed over the semiconductor carrier. The second die is stacked on the first die. The redistribution structure is over the second die. The electron transmission path extends from the semiconductor carrier to the redistribution structure. The electron transmission path is electrically connected to a ground voltage. A first portion of the electron transmission path is embedded in the semiconductor carrier, a second portion of the electron transmission path is aside the first die, and a third portion of the electron transmission path is aside the second die.

Abstract: A package device includes a first device die and second device die bonded thereto. When the area of the second device die is less than half the area of the first device die, one or more inactive structures having a semiconductor substrate is also bonded to the first device die so that the combined area of the second device die and the one or more inactive structures is greater than half the area of the first device die.

Abstract: A package includes a first die that includes a first metallization layer, one or more first bond pad vias on the first metallization layer, wherein a first barrier layer extends across the first metallization layer between each first bond pad via and the first metallization layer, and one or more first bond pads on the one or more first bond pad vias, wherein a second barrier layer extends across each first bond pad via between a first bond pad and the first bond pad via, and a second die including one or more second bond pads, wherein a second bond pad is bonded to a first bond pad of the first die.

Abstract: A method includes bonding a first plurality of active dies to a second plurality of active dies in a wafer. The second plurality of active dies are in an inner region of the wafer. A first plurality of dummy dies are bonded to a second plurality of dummy dies in the wafer. The second plurality of dummy dies are in a peripheral region of the wafer, and the peripheral region encircles the inner region.

Abstract: A semiconductor package includes a first die, a plurality of second dies and a through via. The second dies are disposed over and electrically connected to the first die. The through via is disposed between the second dies and electrically connected to the first die. The through via includes a first portion having a first width and a second portion having a second width different from the first width and disposed between the first portion and the first die. The first portion includes a first seed layer and a first conductive layer, and the first seed layer is disposed aside an interface between the first portion and the second portion.

Abstract: A semiconductor package includes a first semiconductor die, a second semiconductor die and a plurality of bumps. The first semiconductor die has a front side and a backside opposite to each other. The second semiconductor die is disposed at the backside of the first semiconductor die and electrically connected to first semiconductor die. The plurality of bumps is disposed at the front side of the first semiconductor die and physically connects first die pads of the first semiconductor die. A total width of the first semiconductor die may be less than a total width of the second semiconductor die.

Abstract: A semiconductor package and a manufacturing method thereof are provided. The semiconductor package includes a first device die and a second device die. The first device die includes first bonding pads at a front surface of the first device die. The second device die is bonded on the first device die, and includes die regions and a scribe line region connecting the die regions with one another. The die regions respectively comprise second bonding pads at a front surface of the second device die. The second bonding pads are respectively in contact with one of the first bonding pads.

Abstract: In an embodiment, a method includes: stacking a plurality of first dies to form a device stack; revealing testing pads of a topmost die of the device stack; testing the device stack using the testing pads of the topmost die; and after testing the device stack, forming bonding pads in the topmost die, the bonding pads being different from the testing pads.

Abstract: In a method, a wafer is bonded to a first carrier. The wafer includes a semiconductor substrate, and a first plurality of through-vias extending into the semiconductor substrate. The method further includes bonding a plurality of chips over the wafer, with gaps located between the plurality of chips, performing a gap-filling process to form gap-filling regions in the gaps, bonding a second carrier onto the plurality of chips and the gap-filling regions, de-bonding the first carrier from the wafer, and forming electrical connectors electrically connecting to conductive features in the wafer. The electrical connectors are electrically connected to the plurality of chips through the first plurality of through-vias.

Abstract: A package structure and method of manufacturing is provided, whereby a bonding dielectric material layer is provided at a back side of a wafer, a bonding dielectric material layer is provided at a front side of an adjoining wafer, and wherein the bonding dielectric material layers are fusion bonded to each other.

Abstract: Provided is a package structure includes a first die, a first dielectric layer, a second dielectric layer and a carrier. The first dielectric layer covers a bottom surface of the first die. The first dielectric layer includes a first edge portion and a first center portion in contact with the bottom surface of the first die. The second dielectric layer is disposed on the first dielectric layer and laterally surrounding the first die. The second dielectric layer includes a second edge portion and a second center portion. The second edge portion is located on the first edge portion, and the second edge portion is thinner than the second center portion. The carrier is bonded to the first dielectric layer through a bonding film.

Abstract: A package includes a semiconductor carrier, a first die, a second die, a first encapsulant, a second encapsulant, and an electron transmission path. The first die is disposed over the semiconductor carrier. The second die is stacked on the first die. The first encapsulant laterally encapsulates the first die. The second encapsulant laterally encapsulates the second die. The electron transmission path is electrically connected to a ground voltage. A first portion of the electron transmission path is embedded in the semiconductor carrier, a second portion of the electron transmission path is aside the first die and penetrates through the first encapsulant, and a third portion of the electron transmission path is aside the second die and penetrates through the second encapsulant.