Abstract: Provided is a Complementary Metal Oxide Semiconductor (CMOS) logic element. The CMOS logic element includes a substrate including a PMOS area, a circuit wiring structure including an insulating layer and a wiring layer alternately stacked on the substrate, wherein the circuit wiring structure includes an NMOS area vertically spaced apart from the PMOS area, a first transistor disposed on the PMOS area, and a second transistor disposed on the NMOS area and complementarily connected to the first transistor, wherein the first transistor includes a first gate electrode, source/drain areas formed on the PMOS area on both sides of the first gate electrode, and a first channel connecting the source and drain areas to each other, wherein the second transistor includes a second gate electrode and a second channel vertically overlapping the second gate electrode, wherein the first channel includes silicon, wherein the second channel includes an oxide semiconductor.

Abstract: Provided is a static random-access memory (SRAM) device.

Abstract: Provided are stretchable electronics and a method for manufacturing the same. The stretchable electronics may include a substrate, a plurality of electronic elements disposed to be spaced apart from each other on the substrate, and a wire structure disposed on the substrate to connect the plurality of electronic elements to each other. The wire structure may include an insulator extending from one of the electronic elements to the other of the adjacent electronic elements and a metal wire configured to cover a top surface and side surfaces of the insulator. The insulator may include at least one bent part in a plan view.

Abstract: Provided are a semiconductor device, a display panel, and a display device including the same. The semiconductor device includes a lower electrode on one side of a substrate, a spacer on another side of the substrate, a middle electrode on the spacer, a lower channel layer on portions of a sidewall of the spacer, the middle electrode, and the lower electrode, a lower gate insulating layer on the lower channel layer, a common gate electrode on the gate insulating layer, an upper gate insulating layer on the common gate electrode, an upper electrode on the spacer and the upper gate insulating layer of the middle electrode, an upper channel layer connected to the upper electrode and disposed on a sidewall of the upper gate insulating layer, and a contact electrode connected to a portion of the upper channel layer and passing through the lower gate insulating layer and the upper gate insulating layer outside the common gate electrode so as to be connected to the lower electrode.

Abstract: According to an exemplary embodiment of the present invention, by providing an apparatus for fabricating a stretchable electronic element including a chamber, a plurality of sample portions loaded into the chamber and spaced apart from each other, while the chamber is maintained at atmospheric pressure, and a movable member moving the plurality of sample portions and compressing each of the plurality of sample portions together while the chamber is kept under vacuum, it is possible to fabricate variable stretchable electronic elements.

Abstract: Provided is a complex biometric sensor. The complex biometric sensor includes a substrate including a light emitting region, a first light receiving region, and a second light receiving region, a light emitting part disposed adjacent to the substrate in the light emitting region, a color conversion layer disposed on the substrate in the light emitting region and vertically overlapping the light emitting part; a first light receiving layer disposed on the substrate in the first light receiving region, and a second light receiving layer disposed on the substrate in the second light receiving region. The light emitting part generates light of a first wavelength. The color conversion layer receives light of the first wavelength and emits the light of the first wavelength and light of the second wavelength. The first light receiving layer detects the light of the first wavelength. The second light receiving layer detects the light of the second wavelength.

Abstract: The inventive concept provides an organic electronic device and a method of fabricating the same. The organic electronic device includes a flexible substrate configured to include a first region and a second region which are laterally spaced apart from each other, an organic light-emitting diode disposed in the first region of the flexible substrate, and a photodetector disposed in the second region of the flexible substrate, wherein the organic light-emitting diode and the photodetector are disposed on the same plane.

Abstract: Provided is a stretchable display including an elastic body, a light emitting unit on the elastic body, and a wiring unit on the elastic body, wherein the light emitting unit includes a first substrate unit on the elastic body, a buffer layer on the first substrate unit, and a light emitting element on the buffer layer, the wiring unit includes a second substrate unit on the elastic body, a driving element configured to control the light emitting element, a wiring configured to electrically connect the driving element and the light emitting element, and an insulation layer configured to cover the driving element and the wiring, the light emitting unit and the wiring unit have respective corrugation structures, a thickness of the light emitting unit is larger than that of the wiring unit, a modulus of elasticity of the buffer layer is larger than that of the insulation layer, and a modulus of elasticity of the elastic body is smaller than that of the insulation layer.

Abstract: According to an exemplary embodiment of the present invention, by providing an apparatus for fabricating a stretchable electronic element including a chamber, a plurality of sample portions loaded into the chamber and spaced apart from each other, while the chamber is maintained at atmospheric pressure, and a movable member moving the plurality of sample portions and compressing each of the plurality of sample portions together while the chamber is kept under vacuum, it is possible to fabricate variable stretchable electronic elements.

Abstract: Provided is a complex biometric sensor. The complex biometric sensor includes a substrate including a light emitting region, a first light receiving region, and a second light receiving region, a light emitting part disposed adjacent to the substrate in the light emitting region, a color conversion layer disposed on the substrate in the light emitting region and vertically overlapping the light emitting part; a first light receiving layer disposed on the substrate in the first light receiving region, and a second light receiving layer disposed on the substrate in the second light receiving region. The light emitting part generates light of a first wavelength. The color conversion layer receives light of the first wavelength and emits the light of the first wavelength and light of the second wavelength. The first light receiving layer detects the light of the first wavelength. The second light receiving layer detects the light of the second wavelength.

Abstract: Provided is a stretchable display including an elastic body, a light emitting unit on the elastic body, and a wiring unit on the elastic body, wherein the light emitting unit includes a first substrate unit on the elastic body, a buffer layer on the first substrate unit, and a light emitting element on the buffer layer, the wiring unit includes a second substrate unit on the elastic body, a driving element configured to control the light emitting element, a wiring configured to electrically connect the driving element and the light emitting element, and an insulation layer configured to cover the driving element and the wiring, the light emitting unit and the wiring unit have respective corrugation structures, a thickness of the light emitting unit is larger than that of the wiring unit, a modulus of elasticity of the buffer layer is larger than that of the insulation layer, and a modulus of elasticity of the elastic body is smaller than that of the insulation layer.

Abstract: Provided is an optical fingerprint recognition sensor. The optical fingerprint recognition sensor includes a transparent light emitting unit configured to emit light to a fingerprint, a light receiving unit disposed below the light emitting unit to vertically overlap the light emitting unit and configured to receive light reflected by the fingerprint, and a control unit disposed below the light emitting unit to vertically overlap the light emitting unit and configured to control the light emitting unit and the light receiving unit. The light emitting unit includes an organic layer.

Abstract: The inventive concept provides an organic electronic device and a method of fabricating the same. The organic electronic device includes a flexible substrate configured to include a first region and a second region which are laterally spaced apart from each other, an organic light-emitting diode disposed in the first region of the flexible substrate, and a photodetector disposed in the second region of the flexible substrate, wherein the organic light-emitting diode and the photodetector are disposed on the same plane.

Abstract: Provided are a p-type oxide semiconductor, a method of forming the p-type oxide semiconductor, and a transistor with the p-type oxide semiconductor. The p-type oxide semiconductor includes an alkali metal and a tin oxide.

Abstract: A thin film transistor array panel includes: a gate wiring layer disposed on a substrate; an oxide semiconductor layer disposed on the gate wiring layer; and a data wiring layer disposed on the oxide semiconductor layer, in which the data wiring layer includes a main wiring layer including copper and a capping layer disposed on the main wiring layer and including a copper alloy.

Abstract: A thin film transistor array panel includes: a gate wiring layer disposed on a substrate; an oxide semiconductor layer disposed on the gate wiring layer; and a data wiring layer disposed on the oxide semiconductor layer, in which the data wiring layer includes a main wiring layer including copper and a capping layer disposed on the main wiring layer and including a copper alloy.

Abstract: A Thin Film Transistor (TFT) includes a substrate, a semiconductor layer disposed on the substrate a first source electrode and a first drain electrode spaced apart from each other on the semiconductor layer, a channel area disposed in the semiconductor layer between the first source electrode and the first drain electrode, an etching prevention layer disposed on the channel area, the first source electrode, and the first drain electrode and a second source electrode in contact with the first source electrode, and a second drain electrode in contact with the first drain electrode.

Abstract: A thin film transistor array panel includes: a gate wiring layer disposed on a substrate; an oxide semiconductor layer disposed on the gate wiring layer; and a data wiring layer disposed on the oxide semiconductor layer, in which the data wiring layer includes a main wiring layer including copper and a capping layer disposed on the main wiring layer and including a copper alloy.

Abstract: A thin film transistor array panel includes: a gate wiring layer disposed on a substrate; an oxide semiconductor layer disposed on the gate wiring layer; and a data wiring layer disposed on the oxide semiconductor layer, in which the data wiring layer includes a main wiring layer including copper and a capping layer disposed on the main wiring layer and including a copper alloy.

Abstract: Provided is a transistor. The transistor includes: a substrate; a semiconductor layer provided on the substrate and having one side vertical to the substrate and the other side facing the one side; a first electrode extending along the substrate and contacting the one side of the semiconductor layer; a second electrode extending along the substrate and contacting the other side of the semiconductor layer; a conductive wire disposed on the first electrode and spaced from the second electrode; a gate electrode provided on the semiconductor layer; and a gate insulating layer disposed between the semiconductor layer and the gate electrode, wherein the semiconductor layer, the first electrode, and the second electrode have a coplanar.