Patents by Inventor Sung-Haeng Cho

Sung-Haeng Cho has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10986727
    Abstract: According to an exemplary embodiment of the present invention, by providing an apparatus for fabricating a stretchable electronic element including a chamber, a plurality of sample portions loaded into the chamber and spaced apart from each other, while the chamber is maintained at atmospheric pressure, and a movable member moving the plurality of sample portions and compressing each of the plurality of sample portions together while the chamber is kept under vacuum, it is possible to fabricate variable stretchable electronic elements.
    Type: Grant
    Filed: December 14, 2018
    Date of Patent: April 20, 2021
    Assignee: Electronics and Telecommunications Research Institute
    Inventors: Jong Tae Lim, Seung Youl Kang, Jae Bon Koo, Seongdeok Ahn, Jeong Ik Lee, Bock Soon Na, Hyunkoo Lee, Sung Haeng Cho
  • Patent number: 10878214
    Abstract: Provided is a complex biometric sensor. The complex biometric sensor includes a substrate including a light emitting region, a first light receiving region, and a second light receiving region, a light emitting part disposed adjacent to the substrate in the light emitting region, a color conversion layer disposed on the substrate in the light emitting region and vertically overlapping the light emitting part; a first light receiving layer disposed on the substrate in the first light receiving region, and a second light receiving layer disposed on the substrate in the second light receiving region. The light emitting part generates light of a first wavelength. The color conversion layer receives light of the first wavelength and emits the light of the first wavelength and light of the second wavelength. The first light receiving layer detects the light of the first wavelength. The second light receiving layer detects the light of the second wavelength.
    Type: Grant
    Filed: April 8, 2019
    Date of Patent: December 29, 2020
    Assignee: Electronics and Telecommunications Research Institute
    Inventors: Chul Woong Joo, Seung Youl Kang, Jaehyun Moon, Seongdeok Ahn, Jae-Eun Pi, Young Sam Park, Byoung-Hwa Kwon, Sung Haeng Cho, Jeong Ik Lee, Nam Sung Cho, Su Jae Lee
  • Patent number: 10789448
    Abstract: The inventive concept provides an organic electronic device and a method of fabricating the same. The organic electronic device includes a flexible substrate configured to include a first region and a second region which are laterally spaced apart from each other, an organic light-emitting diode disposed in the first region of the flexible substrate, and a photodetector disposed in the second region of the flexible substrate, wherein the organic light-emitting diode and the photodetector are disposed on the same plane.
    Type: Grant
    Filed: July 13, 2018
    Date of Patent: September 29, 2020
    Assignee: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE
    Inventors: Young Sam Park, Jaehyun Moon, Seongdeok Ahn, Seung Youl Kang, Sung Haeng Cho, Byoung Gon Yu, Jeong Ik Lee, Jonghee Lee, Nam Sung Cho, Doo-Hee Cho, Hyunsu Cho
  • Patent number: 10741777
    Abstract: Provided is a stretchable display including an elastic body, a light emitting unit on the elastic body, and a wiring unit on the elastic body, wherein the light emitting unit includes a first substrate unit on the elastic body, a buffer layer on the first substrate unit, and a light emitting element on the buffer layer, the wiring unit includes a second substrate unit on the elastic body, a driving element configured to control the light emitting element, a wiring configured to electrically connect the driving element and the light emitting element, and an insulation layer configured to cover the driving element and the wiring, the light emitting unit and the wiring unit have respective corrugation structures, a thickness of the light emitting unit is larger than that of the wiring unit, a modulus of elasticity of the buffer layer is larger than that of the insulation layer, and a modulus of elasticity of the elastic body is smaller than that of the insulation layer.
    Type: Grant
    Filed: November 29, 2018
    Date of Patent: August 11, 2020
    Assignee: Electronics and Telecommunications Research Institute
    Inventors: Chi-Sun Hwang, Seung Youl Kang, Byoung-Hwa Kwon, Gi Heon Kim, Seong Hyun Kim, Jaehyun Moon, Young Sam Park, Seongdeok Ahn, Jeong Ik Lee, Sung Haeng Cho
  • Publication number: 20190327828
    Abstract: According to an exemplary embodiment of the present invention, by providing an apparatus for fabricating a stretchable electronic element including a chamber, a plurality of sample portions loaded into the chamber and spaced apart from each other, while the chamber is maintained at atmospheric pressure, and a movable member moving the plurality of sample portions and compressing each of the plurality of sample portions together while the chamber is kept under vacuum, it is possible to fabricate variable stretchable electronic elements.
    Type: Application
    Filed: December 14, 2018
    Publication date: October 24, 2019
    Applicant: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE
    Inventors: Jong Tae LIM, Seung Youl KANG, Jae Bon KOO, Seongdeok AHN, JEONG IK LEE, Bock Soon NA, Hyunkoo LEE, Sung Haeng CHO
  • Publication number: 20190311177
    Abstract: Provided is a complex biometric sensor. The complex biometric sensor includes a substrate including a light emitting region, a first light receiving region, and a second light receiving region, a light emitting part disposed adjacent to the substrate in the light emitting region, a color conversion layer disposed on the substrate in the light emitting region and vertically overlapping the light emitting part; a first light receiving layer disposed on the substrate in the first light receiving region, and a second light receiving layer disposed on the substrate in the second light receiving region. The light emitting part generates light of a first wavelength. The color conversion layer receives light of the first wavelength and emits the light of the first wavelength and light of the second wavelength. The first light receiving layer detects the light of the first wavelength. The second light receiving layer detects the light of the second wavelength.
    Type: Application
    Filed: April 8, 2019
    Publication date: October 10, 2019
    Applicant: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE
    Inventors: Chul Woong JOO, Seung Youl KANG, Jaehyun MOON, Seongdeok AHN, Jae-Eun PI, Young Sam PARK, Byoung-Hwa KWON, Sung Haeng CHO, JEONG IK LEE, Nam Sung CHO, Su Jae LEE
  • Publication number: 20190221761
    Abstract: Provided is a stretchable display including an elastic body, a light emitting unit on the elastic body, and a wiring unit on the elastic body, wherein the light emitting unit includes a first substrate unit on the elastic body, a buffer layer on the first substrate unit, and a light emitting element on the buffer layer, the wiring unit includes a second substrate unit on the elastic body, a driving element configured to control the light emitting element, a wiring configured to electrically connect the driving element and the light emitting element, and an insulation layer configured to cover the driving element and the wiring, the light emitting unit and the wiring unit have respective corrugation structures, a thickness of the light emitting unit is larger than that of the wiring unit, a modulus of elasticity of the buffer layer is larger than that of the insulation layer, and a modulus of elasticity of the elastic body is smaller than that of the insulation layer.
    Type: Application
    Filed: November 29, 2018
    Publication date: July 18, 2019
    Applicant: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE
    Inventors: Chi-Sun HWANG, Seung Youl KANG, Byoung-Hwa KWON, Gi Heon KIM, Seong Hyun KIM, Jaehyun MOON, Young Sam PARK, Seongdeok AHN, JEONG IK LEE, Sung Haeng CHO
  • Publication number: 20190213380
    Abstract: Provided is an optical fingerprint recognition sensor. The optical fingerprint recognition sensor includes a transparent light emitting unit configured to emit light to a fingerprint, a light receiving unit disposed below the light emitting unit to vertically overlap the light emitting unit and configured to receive light reflected by the fingerprint, and a control unit disposed below the light emitting unit to vertically overlap the light emitting unit and configured to control the light emitting unit and the light receiving unit. The light emitting unit includes an organic layer.
    Type: Application
    Filed: December 13, 2018
    Publication date: July 11, 2019
    Inventors: Chul Woong JOO, Jonghee LEE, Jae-Eun PI, Byoung-Hwa KWON, Hyunsu CHO, Seung Youl KANG, Seongdeok AHN, Jeong Ik LEE, Nam Sung CHO, Sung Haeng CHO, Woojin SUNG, Jongchan LEE
  • Publication number: 20190065815
    Abstract: The inventive concept provides an organic electronic device and a method of fabricating the same. The organic electronic device includes a flexible substrate configured to include a first region and a second region which are laterally spaced apart from each other, an organic light-emitting diode disposed in the first region of the flexible substrate, and a photodetector disposed in the second region of the flexible substrate, wherein the organic light-emitting diode and the photodetector are disposed on the same plane.
    Type: Application
    Filed: July 13, 2018
    Publication date: February 28, 2019
    Inventors: Young Sam PARK, Jaehyun MOON, Seongdeok AHN, Seung Youl KANG, Sung Haeng CHO, Byoung Gon YU, Jeong Ik LEE, Jonghee LEE, Nam Sung CHO, Doo-Hee CHO, Hyunsu CHO
  • Publication number: 20180026104
    Abstract: Provided are a p-type oxide semiconductor, a method of forming the p-type oxide semiconductor, and a transistor with the p-type oxide semiconductor. The p-type oxide semiconductor includes an alkali metal and a tin oxide.
    Type: Application
    Filed: June 13, 2017
    Publication date: January 25, 2018
    Applicant: Electronics and Telecommunications Research Institute
    Inventors: Sung Haeng CHO, Sooji NAM, Chi-Sun HWANG, Su Jae LEE, Kyoung Ik CHO, Jae-Eun PI
  • Patent number: 9837446
    Abstract: A thin film transistor array panel includes: a gate wiring layer disposed on a substrate; an oxide semiconductor layer disposed on the gate wiring layer; and a data wiring layer disposed on the oxide semiconductor layer, in which the data wiring layer includes a main wiring layer including copper and a capping layer disposed on the main wiring layer and including a copper alloy.
    Type: Grant
    Filed: February 8, 2017
    Date of Patent: December 5, 2017
    Assignee: Samsung Display Co., Ltd.
    Inventors: Do-Hyun Kim, Yoon Ho Khang, Dong-Hoon Lee, Sang Ho Park, Se Hwan Yu, Cheol Kyu Kim, Yong-Su Lee, Sung Haeng Cho, Chong Sup Chang, Dong Jo Kim, Jung Kyu Lee
  • Publication number: 20170154897
    Abstract: A thin film transistor array panel includes: a gate wiring layer disposed on a substrate; an oxide semiconductor layer disposed on the gate wiring layer; and a data wiring layer disposed on the oxide semiconductor layer, in which the data wiring layer includes a main wiring layer including copper and a capping layer disposed on the main wiring layer and including a copper alloy.
    Type: Application
    Filed: February 8, 2017
    Publication date: June 1, 2017
    Inventors: Do-Hyun KIM, Yoon Ho KHANG, Dong-Hoon LEE, Sang Ho PARK, Se Hwan YU, Cheol Kyu KIM, Yong-Su LEE, Sung Haeng CHO, Chong Sup CHANG, Dong Jo KIM, Jung Kyu LEE
  • Patent number: 9647136
    Abstract: A Thin Film Transistor (TFT) includes a substrate, a semiconductor layer disposed on the substrate a first source electrode and a first drain electrode spaced apart from each other on the semiconductor layer, a channel area disposed in the semiconductor layer between the first source electrode and the first drain electrode, an etching prevention layer disposed on the channel area, the first source electrode, and the first drain electrode and a second source electrode in contact with the first source electrode, and a second drain electrode in contact with the first drain electrode.
    Type: Grant
    Filed: June 18, 2015
    Date of Patent: May 9, 2017
    Assignee: SAMSUNG DISPLAY CO., LTD.
    Inventors: Hyun-Jung Lee, Sung-Haeng Cho, Woo-Geun Lee, Jang-Hoon Ha, Hee-Jun Byeon, Ji-Yun Hong, Ji-Soo Oh
  • Patent number: 9589998
    Abstract: A thin film transistor array panel includes: a gate wiring layer disposed on a substrate; an oxide semiconductor layer disposed on the gate wiring layer; and a data wiring layer disposed on the oxide semiconductor layer, in which the data wiring layer includes a main wiring layer including copper and a capping layer disposed on the main wiring layer and including a copper alloy.
    Type: Grant
    Filed: January 29, 2016
    Date of Patent: March 7, 2017
    Assignee: Samsung Display Co., Ltd.
    Inventors: Do-Hyun Kim, Yoon Ho Khang, Dong-Hoon Lee, Sang Ho Park, Se Hwan Yu, Cheol Kyu Kim, Yong-Su Lee, Sung Haeng Cho, Chong Sup Chang, Dong Jo Kim, Jung Kyu Lee
  • Publication number: 20160148958
    Abstract: A thin film transistor array panel includes: a gate wiring layer disposed on a substrate; an oxide semiconductor layer disposed on the gate wiring layer; and a data wiring layer disposed on the oxide semiconductor layer, in which the data wiring layer includes a main wiring layer including copper and a capping layer disposed on the main wiring layer and including a copper alloy.
    Type: Application
    Filed: January 29, 2016
    Publication date: May 26, 2016
    Inventors: Do-Hyun KIM, Yoon Ho KHANG, Dong-Hoon LEE, Sang Ho PARK, Se Hwan YU, Cheol Kyu KIM, Yong-Su LEE, Sung Haeng CHO, Chong Sup CHANG, Dong Jo KIM, Jung Kyu LEE
  • Patent number: 9252222
    Abstract: Provided is a transistor. The transistor includes: a substrate; a semiconductor layer provided on the substrate and having one side vertical to the substrate and the other side facing the one side; a first electrode extending along the substrate and contacting the one side of the semiconductor layer; a second electrode extending along the substrate and contacting the other side of the semiconductor layer; a conductive wire disposed on the first electrode and spaced from the second electrode; a gate electrode provided on the semiconductor layer; and a gate insulating layer disposed between the semiconductor layer and the gate electrode, wherein the semiconductor layer, the first electrode, and the second electrode have a coplanar.
    Type: Grant
    Filed: July 15, 2015
    Date of Patent: February 2, 2016
    Assignee: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE
    Inventors: Sung Haeng Cho, Sang-Hee Park, Chi-Sun Hwang
  • Patent number: 9252226
    Abstract: Provided is a thin film transistor array panel. The thin film transistor array panel according to exemplary embodiments of the present invention includes: a gate wiring layer disposed on a substrate; an oxide semiconductor layer disposed on the gate wiring layer; and a data wiring layer disposed on the oxide semiconductor layer, in which the data wiring layer includes a main wiring layer including copper and a capping layer disposed on the main wiring layer and including a copper alloy.
    Type: Grant
    Filed: February 6, 2012
    Date of Patent: February 2, 2016
    Assignee: Samsung Display Co., Ltd.
    Inventors: Do-Hyun Kim, Yoon Ho Khang, Dong-Hoon Lee, Sang Ho Park, Se Hwan Yu, Cheol Kyu Kim, Yong-Su Lee, Sung Haeng Cho, Chong Sup Chang, Dong Jo Kim, Jung Kyu Lee
  • Patent number: 9245906
    Abstract: A thin film transistor array panel includes: a gate line disposed on a substrate and including a gate electrode, a semiconductor layer including an oxide semiconductor disposed on the substrate, and a data wire layer disposed on the substrate and including a data line intersecting the gate line, a source electrode connected to the data line, and a drain electrode facing the source electrode. In addition, at least one of the data line, the source electrode or the drain electrode of the data wire layer includes a barrier layer and a main wiring layer disposed on the barrier layer. The main wiring layer includes copper or a copper alloy. Also, the barrier layer includes a metal oxide, and the metal oxide includes zinc.
    Type: Grant
    Filed: July 9, 2015
    Date of Patent: January 26, 2016
    Assignee: SAMSUNG DISPLAY CO., LTD.
    Inventors: Jae Woo Park, Do-Hyun Kim, Young Joo Choi, Dong Hoon Lee, Sung Haeng Cho
  • Patent number: 9245966
    Abstract: A thin film transistor includes a gate electrode, a gate insulating layer on the gate electrode, a semiconductor on the gate insulating layer, and a drain electrode and a source electrode on the semiconductor and spaced apart from each other. Each of the drain electrode and the source electrode includes a first metal diffusion preventing layer which prevents diffusion of metal atoms, and a second metal diffusion preventing layer on the first metal diffusion preventing layer. At least one of the first and second metal diffusion preventing layers includes grains in a columnar structure, which are in a direction substantially perpendicular to a lower layer. First grain boundaries of the first metal diffusion preventing layer and second grain boundaries of the second metal diffusion preventing layer are substantially discontinuous in a direction perpendicular to the semiconductor.
    Type: Grant
    Filed: September 23, 2011
    Date of Patent: January 26, 2016
    Assignee: SAMSUNG DISPLAY CO., LTD.
    Inventors: Jae-Woo Park, Sung-Haeng Cho, Kyong-Sub Kim, Dong-Yeon Cho
  • Publication number: 20150318363
    Abstract: Provided is a transistor. The transistor includes: a substrate; a semiconductor layer provided on the substrate and having one side vertical to the substrate and the other side facing the one side; a first electrode extending along the substrate and contacting the one side of the semiconductor layer; a second electrode extending along the substrate and contacting the other side of the semiconductor layer; a conductive wire disposed on the first electrode and spaced from the second electrode; a gate electrode provided on the semiconductor layer; and a gate insulating layer disposed between the semiconductor layer and the gate electrode, wherein the semiconductor layer, the first electrode, and the second electrode have a coplanar.
    Type: Application
    Filed: July 15, 2015
    Publication date: November 5, 2015
    Applicant: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE
    Inventors: Sung Haeng CHO, Sang-Hee PARK, Chi-Sun HWANG