Patents by Inventor Sung-Haeng Cho
Sung-Haeng Cho has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 9589998Abstract: A thin film transistor array panel includes: a gate wiring layer disposed on a substrate; an oxide semiconductor layer disposed on the gate wiring layer; and a data wiring layer disposed on the oxide semiconductor layer, in which the data wiring layer includes a main wiring layer including copper and a capping layer disposed on the main wiring layer and including a copper alloy.Type: GrantFiled: January 29, 2016Date of Patent: March 7, 2017Assignee: Samsung Display Co., Ltd.Inventors: Do-Hyun Kim, Yoon Ho Khang, Dong-Hoon Lee, Sang Ho Park, Se Hwan Yu, Cheol Kyu Kim, Yong-Su Lee, Sung Haeng Cho, Chong Sup Chang, Dong Jo Kim, Jung Kyu Lee
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Publication number: 20160148958Abstract: A thin film transistor array panel includes: a gate wiring layer disposed on a substrate; an oxide semiconductor layer disposed on the gate wiring layer; and a data wiring layer disposed on the oxide semiconductor layer, in which the data wiring layer includes a main wiring layer including copper and a capping layer disposed on the main wiring layer and including a copper alloy.Type: ApplicationFiled: January 29, 2016Publication date: May 26, 2016Inventors: Do-Hyun KIM, Yoon Ho KHANG, Dong-Hoon LEE, Sang Ho PARK, Se Hwan YU, Cheol Kyu KIM, Yong-Su LEE, Sung Haeng CHO, Chong Sup CHANG, Dong Jo KIM, Jung Kyu LEE
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Patent number: 9252222Abstract: Provided is a transistor. The transistor includes: a substrate; a semiconductor layer provided on the substrate and having one side vertical to the substrate and the other side facing the one side; a first electrode extending along the substrate and contacting the one side of the semiconductor layer; a second electrode extending along the substrate and contacting the other side of the semiconductor layer; a conductive wire disposed on the first electrode and spaced from the second electrode; a gate electrode provided on the semiconductor layer; and a gate insulating layer disposed between the semiconductor layer and the gate electrode, wherein the semiconductor layer, the first electrode, and the second electrode have a coplanar.Type: GrantFiled: July 15, 2015Date of Patent: February 2, 2016Assignee: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTEInventors: Sung Haeng Cho, Sang-Hee Park, Chi-Sun Hwang
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Patent number: 9252226Abstract: Provided is a thin film transistor array panel. The thin film transistor array panel according to exemplary embodiments of the present invention includes: a gate wiring layer disposed on a substrate; an oxide semiconductor layer disposed on the gate wiring layer; and a data wiring layer disposed on the oxide semiconductor layer, in which the data wiring layer includes a main wiring layer including copper and a capping layer disposed on the main wiring layer and including a copper alloy.Type: GrantFiled: February 6, 2012Date of Patent: February 2, 2016Assignee: Samsung Display Co., Ltd.Inventors: Do-Hyun Kim, Yoon Ho Khang, Dong-Hoon Lee, Sang Ho Park, Se Hwan Yu, Cheol Kyu Kim, Yong-Su Lee, Sung Haeng Cho, Chong Sup Chang, Dong Jo Kim, Jung Kyu Lee
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Patent number: 9245906Abstract: A thin film transistor array panel includes: a gate line disposed on a substrate and including a gate electrode, a semiconductor layer including an oxide semiconductor disposed on the substrate, and a data wire layer disposed on the substrate and including a data line intersecting the gate line, a source electrode connected to the data line, and a drain electrode facing the source electrode. In addition, at least one of the data line, the source electrode or the drain electrode of the data wire layer includes a barrier layer and a main wiring layer disposed on the barrier layer. The main wiring layer includes copper or a copper alloy. Also, the barrier layer includes a metal oxide, and the metal oxide includes zinc.Type: GrantFiled: July 9, 2015Date of Patent: January 26, 2016Assignee: SAMSUNG DISPLAY CO., LTD.Inventors: Jae Woo Park, Do-Hyun Kim, Young Joo Choi, Dong Hoon Lee, Sung Haeng Cho
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Patent number: 9245966Abstract: A thin film transistor includes a gate electrode, a gate insulating layer on the gate electrode, a semiconductor on the gate insulating layer, and a drain electrode and a source electrode on the semiconductor and spaced apart from each other. Each of the drain electrode and the source electrode includes a first metal diffusion preventing layer which prevents diffusion of metal atoms, and a second metal diffusion preventing layer on the first metal diffusion preventing layer. At least one of the first and second metal diffusion preventing layers includes grains in a columnar structure, which are in a direction substantially perpendicular to a lower layer. First grain boundaries of the first metal diffusion preventing layer and second grain boundaries of the second metal diffusion preventing layer are substantially discontinuous in a direction perpendicular to the semiconductor.Type: GrantFiled: September 23, 2011Date of Patent: January 26, 2016Assignee: SAMSUNG DISPLAY CO., LTD.Inventors: Jae-Woo Park, Sung-Haeng Cho, Kyong-Sub Kim, Dong-Yeon Cho
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Publication number: 20150318363Abstract: Provided is a transistor. The transistor includes: a substrate; a semiconductor layer provided on the substrate and having one side vertical to the substrate and the other side facing the one side; a first electrode extending along the substrate and contacting the one side of the semiconductor layer; a second electrode extending along the substrate and contacting the other side of the semiconductor layer; a conductive wire disposed on the first electrode and spaced from the second electrode; a gate electrode provided on the semiconductor layer; and a gate insulating layer disposed between the semiconductor layer and the gate electrode, wherein the semiconductor layer, the first electrode, and the second electrode have a coplanar.Type: ApplicationFiled: July 15, 2015Publication date: November 5, 2015Applicant: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTEInventors: Sung Haeng CHO, Sang-Hee PARK, Chi-Sun HWANG
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Publication number: 20150311234Abstract: A thin film transistor array panel includes: a gate line disposed on a substrate and including a gate electrode, a semiconductor layer including an oxide semiconductor disposed on the substrate, and a data wire layer disposed on the substrate and including a data line intersecting the gate line, a source electrode connected to the data line, and a drain electrode facing the source electrode. In addition, at least one of the data line, the source electrode or the drain electrode of the data wire layer includes a barrier layer and a main wiring layer disposed on the barrier layer. The main wiring layer includes copper or a copper alloy. Also, the barrier layer includes a metal oxide, and the metal oxide includes zinc.Type: ApplicationFiled: July 9, 2015Publication date: October 29, 2015Inventors: Jae Woo PARK, Do-Hyun KIM, Young Joo CHOI, Dong Hoon LEE, Sung Haeng CHO
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Publication number: 20150287836Abstract: A Thin Film Transistor (TFT) includes a substrate, a semiconductor layer disposed on the substrate a first source electrode and a first drain electrode spaced apart from each other on the semiconductor layer, a channel area disposed in the semiconductor layer between the first source electrode and the first drain electrode, an etching prevention layer disposed on the channel area, the first source electrode, and the first drain electrode and a second source electrode in contact with the first source electrode, and a second drain electrode in contact with the first drain electrode.Type: ApplicationFiled: June 18, 2015Publication date: October 8, 2015Inventors: Hyun-Jung Lee, Sung-Haeng Cho, Woo-Geun Lee, Jang-Hoon Ha, Hee-Jun Byeon, Ji-Yun Hong, Ji-Soo Oh
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Patent number: 9117917Abstract: A Thin Film Transistor (TFT) includes a substrate, a semiconductor layer disposed on the substrate a first source electrode and a first drain electrode spaced apart from each other on the semiconductor layer, a channel area disposed in the semiconductor layer between the first source electrode and the first drain electrode, an etching prevention layer disposed on the channel area, the first source electrode, and the first drain electrode and a second source electrode in contact with the first source electrode, and a second drain electrode in contact with the first drain electrode.Type: GrantFiled: October 12, 2012Date of Patent: August 25, 2015Assignee: SAMSUNG DISPLAY CO., LTD.Inventors: Hyun-Jung Lee, Sung-Haeng Cho, Woo-Geun Lee, Jang-Hoon Ha, Hee-Jun Byeon, Ji-Yun Hong, Ji-Soo Oh
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Patent number: 9105726Abstract: Provided is a transistor. The transistor includes: a substrate; a semiconductor layer provided on the substrate and having one side vertical to the substrate and the other side facing the one side; a first electrode extending along the substrate and contacting the one side of the semiconductor layer; a second electrode extending along the substrate and contacting the other side of the semiconductor layer; a conductive wire disposed on the first electrode and spaced from the second electrode; a gate electrode provided on the semiconductor layer; and a gate insulating layer disposed between the semiconductor layer and the gate electrode, wherein the semiconductor layer, the first electrode, and the second electrode have a coplanar.Type: GrantFiled: February 27, 2014Date of Patent: August 11, 2015Assignee: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTEInventors: Sung Haeng Cho, Sang-Hee Park, Chi-Sun Hwang
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Patent number: 9099438Abstract: A thin film transistor array panel includes: a gate line disposed on a substrate and including a gate electrode, a semiconductor layer including an oxide semiconductor disposed on the substrate, and a data wire layer disposed on the substrate and including a data line intersecting the gate line, a source electrode connected to the data line, and a drain electrode facing the source electrode. In addition, at least one of the data line, the source electrode or the drain electrode of the data wire layer includes a barrier layer and a main wiring layer disposed on the barrier layer. The main wiring layer includes copper or a copper alloy. Also, the barrier layer includes a metal oxide, and the metal oxide includes zinc.Type: GrantFiled: October 25, 2012Date of Patent: August 4, 2015Assignee: SAMSUNG DISPLAY CO., LTD.Inventors: Jae Woo Park, Do-Hyun Kim, Young Joo Choi, Dong Hoon Lee, Sung Haeng Cho
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Patent number: 9070718Abstract: A thin film transistor, a display device, and a manufacturing method thereof. The thin film transistor includes a control electrode, a semiconductor overlapping the control electrode, and an input electrode and an output electrode disposed on or under the semiconductor and opposite to each other. The semiconductor includes a first portion disposed between the input electrode and the output electrode and having a first crystallinity, and a second portion connected with the first portion, which overlaps the input electrode or the output electrode, and having a second crystallinity. The first crystallinity is higher than the second crystallinity.Type: GrantFiled: May 22, 2013Date of Patent: June 30, 2015Assignee: SAMSUNG DISPLAY CO., LTD.Inventors: Sung-Haeng Cho, Ki-Hun Jeong, Jun-Ho Song, Joo-Han Kim, Hyung-Jun Kim, Seung-Hwan Shim
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Patent number: 9018623Abstract: An array substrate includes a thin film transistor which includes a gate electrode electrically connected to a gate line, a source electrode electrically connected to a data line, a drain electrode and an active layer, a first electrode electrically connected to the drain electrode and disposed at a pixel area, and a second electrode covering an upper and a side surface of the source electrode. The second electrode is spaced apart from the first electrode.Type: GrantFiled: November 12, 2012Date of Patent: April 28, 2015Assignee: Samsung Display Co., Ltd.Inventors: Duk-Sung Kim, Sung-Haeng Cho
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Patent number: 8952876Abstract: A display substrate includes a base substrate, a first insulating layer formed on a base substrate, a pixel including a pixel electrode having the first insulating layer, and a circuit including a circuit transistor disposed on a peripheral area to drive the pixel. The pixel includes a first channel formed on the base substrate having the first insulating layer formed thereon. The first channel includes a poly-silicon layer, a first source electrode and a first drain electrode formed on the first channel that are spaced apart from each other, and a first gate electrode formed on the first source electrode and the first drain electrode corresponding to the first channel which is formed of the transparent conductive material. The poly-silicon layer is formed at a front channel portion of the first channel proximal to the first gate electrode through the first gate electrode.Type: GrantFiled: October 8, 2010Date of Patent: February 10, 2015Assignee: Samsung Display Co., Ltd.Inventors: Hyung-Jun Kim, Sung-Haeng Cho, Yong-Mo Choi
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Publication number: 20140367689Abstract: Provided is a transistor. The transistor includes: a substrate; a semiconductor layer provided on the substrate and having one side vertical to the substrate and the other side facing the one side; a first electrode extending along the substrate and contacting the one side of the semiconductor layer; a second electrode extending along the substrate and contacting the other side of the semiconductor layer; a conductive wire disposed on the first electrode and spaced from the second electrode; a gate electrode provided on the semiconductor layer; and a gate insulating layer disposed between the semiconductor layer and the gate electrode, wherein the semiconductor layer, the first electrode, and the second electrode have a coplanar.Type: ApplicationFiled: February 27, 2014Publication date: December 18, 2014Applicant: Electronics and Telecommunications Research InstituteInventors: Sung Haeng CHO, Sang-Hee PARK, Chi-Sun HWANG
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Patent number: 8755019Abstract: A method of manufacturing a liquid crystal display includes: forming a gate line including a gate electrode on a first substrate; forming a gate insulating layer on the gate line; sequentially forming a semiconductor layer, an amorphous silicon layer, and a data metal layer on the entire surface of the gate insulating layer; aligning the edges of the semiconductor layer and the data metal layer; forming a transparent conductive layer on the gate insulating layer and the data metal layer; forming a first pixel electrode and a second pixel electrode by patterning the transparent conductive layer; and forming a data line including a source electrode, a drain electrode, and an ohmic contact layer by etching the data metal layer and the amorphous silicon layer, using the first pixel electrode and the second pixel electrode as a mask, and exposing the semiconductor between the source electrode and the drain electrode.Type: GrantFiled: July 28, 2011Date of Patent: June 17, 2014Assignee: Samsung Display Co., Ltd.Inventors: Ji-Young Park, Sang Gab Kim, Yong-Mo Choi, Hyung Jun Kim, Sung-Haeng Cho, Hong-Sick Park, Byeong-Jin Lee, Soo-Wan Yoon
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Patent number: 8735890Abstract: In a display substrate and a method of manufacturing the display substrate, the display substrate includes a data line, a channel pattern, an insulating pattern and a pixel electrode. The data line extends in a direction on a base substrate. The channel pattern is disposed in a separate region between an input electrode connected to the data line and an output electrode spaced apart from the input electrode. The channel pattern makes contact with the input electrode and the output electrode on the input and output electrodes. The insulating pattern is spaced apart from the channel pattern on the base substrate and includes a contact hole exposing the output electrode. The pixel electrode is formed on the insulating pattern to make contact with the output electrode through the contact hole. Thus, a damage of the oxide semiconductor layer may be minimized and a manufacturing process may be simplified.Type: GrantFiled: December 16, 2011Date of Patent: May 27, 2014Assignee: Samsung Display Co., Ltd.Inventors: Ki-Won Kim, Je-Hun Lee, Sung-Haeng Cho, Woo-Geun Lee, Kap-Soo Yoon, Do-Hyun Kim, Seung-Ha Choi
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Publication number: 20140001463Abstract: An array substrate includes a thin film transistor which includes a gate electrode electrically connected to a gate line, a source electrode electrically connected to a data line, a drain electrode and an active layer, a first electrode electrically connected to the drain electrode and disposed at a pixel area, and a second electrode covering an upper and a side surface of the source electrode. The second electrode is spaced apart from the first electrode.Type: ApplicationFiled: November 12, 2012Publication date: January 2, 2014Applicant: Samsung Display Co., Ltd.Inventors: Duk-Sung KIM, Sung-Haeng Cho
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Patent number: 8598577Abstract: A display substrate includes a gate line extending in a first direction on a base substrate, a data line on the base substrate and extending in a second direction crossing the first direction, a gate insulating layer on the gate line, a thin-film transistor and a pixel electrode. The thin-film transistor includes a gate electrode electrically connected the gate line, an oxide semiconductor pattern, and source and drain electrodes on the oxide semiconductor pattern and spaced apart from each other. The oxide semiconductor pattern includes a first semiconductor pattern including indium oxide and a second semiconductor pattern including indium-free oxide. The pixel electrode is electrically connected the drain electrode.Type: GrantFiled: July 7, 2011Date of Patent: December 3, 2013Assignee: Samsung Display Co., Ltd.Inventors: Jae-Woo Park, Dong-Hoon Lee, Sung-Haeng Cho, Woo-Geun Lee, Hye-Young Ryu, Young-Joo Choi