Abstract: The present invention relates to optical wave guide having multiple independent optical path and optical gas sensor using that, having an effect of improving optical efficiency by elongating optical path and condensing incident light without a separate artificial structure, by using first focus points of multiple 3 dimensional elliptical mirrors as a common focus point and equipping a light source at a first focus point and optical sensor parts at each second focus points in an optical structure using multiple 3 dimensional elliptical mirrors, and by placing so that virtual lines of first elliptical mirror and second elliptical mirror form a constant angle for improving optical efficiency in a structure equipping a light source at a second focus point of any one of elliptical mirror of multiple 3 dimensional elliptical mirrors and optical sensor parts at each second focus points of another 3 dimensional elliptical mirror.

Abstract: There is provided a semiconductor device. The semiconductor device may include multiple contacts plugs, an insulation layer pattern, a metal oxide layer pattern, a metal pattern and a metal line. The contact plugs contact a substrate. The insulation layer pattern is formed between the contact plugs and has a top surface lower than those of the contact plugs. The metal oxide layer pattern is formed on the insulation layer pattern, and has a dielectric constant higher than that of silicon oxide. The metal pattern is formed on the metal oxide layer pattern and contacts sidewalls of the contact plugs. The metal line contacts top surfaces of the contact plugs and the metal pattern and extends thereon.

Abstract: A device includes: a short-range communicator which is configured to communicate with at least one mobile terminal by a short-range communication method; and a controller which is configured to determine whether a mobile terminal targeted for approaching is a registered mobile terminal if it is detected that the mobile terminal approaches the device, and controls the short-range communicator to receive the first authentication information corresponding to the device from the approached mobile terminal if the approached mobile terminal is determined as the registered mobile terminal, and authenticate a user of the device through the received first authentication information. With this, a user can be authenticated by a simple method of making the mobile terminal approach the device without inputting his/her authentication information, thereby improving user's convenience and strengthening security effect.

Abstract: There is provided a semiconductor device. The semiconductor device may include multiple contacts plugs, an insulation layer pattern, a metal oxide layer pattern, a metal pattern and a metal line. The contact plugs contact a substrate. The insulation layer pattern is formed between the contact plugs and has a top surface lower than those of the contact plugs. The metal oxide layer pattern is formed on the insulation layer pattern, and has a dielectric constant higher than that of silicon oxide. The metal pattern is formed on the metal oxide layer pattern and contacts sidewalls of the contact plugs. The metal line contacts top surfaces of the contact plugs and the metal pattern and extends thereon.

Abstract: There are provided an electronic receipt management device and a method thereof. The electronic receipt management system according to an embodiment of the present disclosure includes a data collecting device configured to detect a control event transmitted from a payment device to a printer output unit, collect data transmitted from the payment device to the printer output unit, and convert the collected data into a predefined format, and an electronic receipt management device configured to receive the data converted into a standardized format from the data collecting device, compare the received data and a user database for matching a receipt user, and issue an electronic receipt to the matching user.

Abstract: Disclosed is a digital card-based payment system and method. A digital card-based payment system includes a seller terminal configured to acquire a token from a purchaser terminal desiring to purchase a product and a card management server configured to store and manage one or more pieces of card information and one or more pieces of token information corresponding to the card information and, upon receipt of the token information and payment information for the product from the seller terminal, make payment for the product using card information corresponding to the received token.

Abstract: A semiconductor device including a buried cell array transistor and an electronic device including the same are provided. The device includes a field region in a substrate and the filed region defines an active region. A first source/drain region and a second source/drain region are in the active region. A gate trench is between the first and second source/drain regions, and in the active region and the field region. A gate structure is within the gate trench. The gate structure includes a gate electrode, an insulating gate capping pattern on the gate electrode, a gate dielectric between the gate electrode and the active region, and an insulating metal-containing material layer between the insulating gate capping pattern and the active region.

Abstract: A semiconductor device including a substrate including an NMOS region and a PMOS region; first and second gate dielectrics on the NMOS and PMOS regions of the substrate and including a high-k dielectric material; a first gate structure on the first gate dielectric and including a sequentially stacked first n-type metal layer pattern and first electrode layer pattern; a second gate structure on the second gate dielectric and including a sequentially stacked p-type metal layer pattern, second n-type metal layer pattern, and second electrode layer pattern; first and second spacers on sidewalls of the first and second gate structures; a first offset pattern between the first gate structure and the first spacer; and a second offset pattern between the second gate structure and the second spacer, the second offset pattern being on the sidewalls of the second gate structure excluding sidewalls of the p-type metal layer pattern.

Abstract: Memory devices include a substrate including first to third regions, a memory element on the first region, a first transistor on the second region closer to the first region than to the third region and including a spacer filled with an insulating material, and a second transistor on the third region and including a spacer filled with air.

Abstract: Provided are a system and method for dynamically expanding a virtual cluster having one or more virtual machines (VMs), based on the resource availability of the virtual cluster and the type of the virtual cluster.

Abstract: There are provided a steel for deep drawing, and a method for manufacturing the steel and a high pressure container. The steel for deep drawing includes, by weight: C: 0.25 to 0.40%, Si: 0.15 to 0.40%, Mn: 0.4 to 1.0%, Al: 0.001 to 0.05%, Cr: 0.8 to 1.2%, Mo: 0.15 to 0.8%, Ni: 1.0% or less, P: 0.015% or less, S: 0.015% or less, Ca: 0.0005 to 0.002%, Ti: 0.005 to 0.025%, B: 0.0005 to 0.0020% and the balance of Fe and inevitable impurities, wherein a microstructure of the steel has a triphase structure of ferrite, bainite and martensite. The steel for deep drawing may be useful to further improve the strength without the deterioration of the toughness by adding a trace of Ti and B, compared to the conventional steels having a strength of approximately 1100 MPa.

Abstract: A semiconductor device including a buried cell array transistor and an electronic device including the same are provided. The device includes a field region in a substrate and the filed region defines an active region. A first source/drain region and a second source/drain region are in the active region. A gate trench is between the first and second source/drain regions, and in the active region and the field region. A gate structure is within the gate trench. The gate structure includes a gate electrode, an insulating gate capping pattern on the gate electrode, a gate dielectric between the gate electrode and the active region, and an insulating metal-containing material layer between the insulating gate capping pattern and the active region.

Abstract: Disclosed is a method for removing a thermal sleeve from a cold leg of a reactor coolant system, which enables removal of an unintentionally separated thermal sleeve without implementation of a pipe cutting operation, preventing invasion of impurities into pipes and securing reliability in repetitious welding of the pipes. In particular, the method enables a remote operation and an underwater operation using wire ropes, thus being capable of minimizing a negative effect on workers due to radiation exposure.

Abstract: Disclosed is a device selection structure for selecting one or more devices, comprising: a plurality of devices each having an input port and an output port; and a device module including a movement plate installed movably in conjunction with the plurality of devices, an input connector, and an output connector, wherein the input and output ports of the plurality of devices and the input and output connectors of the device module are installed so that during movement of the movement plate, the input and output ports of the plurality of devices are sequentially connected, at predetermined positions, to the input and output connectors of the device module.

Abstract: A semiconductor device employing a transistor having a recessed channel region and a method of fabricating the same is disclosed. A semiconductor substrate has an active region. A trench structure is defined within the active region. The trench structure includes an upper trench region adjacent to a surface of the active region, a lower trench region and a buffer trench region interposed between the upper trench region and the lower trench region. A width of the lower trench region may be greater than a width of the upper trench region. An inner wall of the trench structure may include a convex region interposed between the upper trench region and the buffer trench region and another convex region interposed between the buffer trench region and the lower trench region. A gate electrode is disposed in the trench structure. A gate dielectric layer is interposed between the gate electrode and the trench structure.

Abstract: Disclosed is an apparatus for removing a thermal sleeve from a cold leg of a reactor coolant system, which removes an unintentionally separated thermal sleeve without pipe cutting, preventing invasion of impurities into pipes and achieving reliable pipe re-welding. The apparatus includes a sleeve removal tool including a corn head formed at a shaft, a pressure plate below the corn head to maximize hydraulic pressure inside a safety injection pipe, a spring connected to the pressure plate to keep the pressure plate unfolded, and a guide wheel to guide the sleeve removal tool into the safety injection pipe, a horizontal movement carrier including bodies connected to each other by a link, a seating rod for seating of the sleeve removal tool, and moving wheels for movement of the horizontal movement carrier, and a vertical movement carrier including first and second anti-separation bars to prevent separation of the horizontal movement carrier.

Abstract: Provided are a substrate treating apparatus and a method of manufacturing the substrate treating apparatus. Processing units of a process equipment are modularized, and the modularized processing units are detachably disposed in a main frame. According to this characteristic, work time and work effort required for manufacturing the process equipment can be reduced. In addition, maintenance/repair of each of the processing units can be further easily performed.

Abstract: There is provided a high strength steel plate including, by weight: 0.03% to 0.20% C, 0.15% to 0.55% Si, 0.9% to 1.5% Mn, 0.001% to 0.05% Al, 0.030% or less P, 0.030% or less S, 0.30% or less Cr, 0.2% or less Mo, 0.6% or less Ni, 0.07% or less V, 0.04% or less Nb, 5 ppm to 50 ppm Ca, 0.005% to 0.025% Ti, 0.0020% to 0.0060% N, 0.0005% to 0.0020% B, the balance of F and unavoidable impurities. The steel plate may be formed of tempered martensite, and conditions for cooling and recrystallization controlled rolling are optimized so as to control an average grain size of a microstructure and an aspect ratio of structure grains. Accordingly, a superior high-strength steel plate that can be used for an atomic plant, for example, an atomic plant rated at IOOOMW or more by having a tensile strength of at least 650 MPa and an impact toughness of at least 200 J at ?5O ° C., and a method of manufacturing the same can be provided.

Abstract: An enclosure device of a wireless communication apparatus, which has a tubular structure with increased heat dissipation not unknown heretofore. A section of the enclosure device has a polygonal or circular shape, such as a substantially cylindrical structure, and the enclosure, which has a plurality of radiation fins arranged on an outer surface of the enclosure in a vertical direction, is formed integrally with the radiation fins by using a compression method. Various communication devices of the wire communication apparatus are mounted on the interior of the enclosure. The structure is preferably formed by the radiation fins and exhibits an increased radiation effect than that of a structure where radiation fins are arranged side by side on a flat plane.

Abstract: Disclosed is an apparatus for removing a thermal sleeve from a cold leg of a reactor coolant system, which removes an unintentionally separated thermal sleeve without pipe cutting, preventing invasion of impurities into pipes and achieving reliable pipe re-welding. The apparatus includes a sleeve removal tool including a corn head formed at a shaft, a pressure plate below the corn head to maximize hydraulic pressure inside a safety injection pipe, a spring connected to the pressure plate to keep the pressure plate unfolded, and a guide wheel to guide the sleeve removal tool into the safety injection pipe, a horizontal movement carrier including bodies connected to each other by a link, a seating rod for seating of the sleeve removal tool, and moving wheels for movement of the horizontal movement carrier, and a vertical movement carrier including first and second anti-separation bars to prevent separation of the horizontal movement carrier.