Patents by Inventor Sung-Hun Lee

Sung-Hun Lee has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20160021773
    Abstract: A display device includes: a display panel; a bottom chassis in which the display panel is accommodated; a driving circuit substrate disposed on an outside surface of the bottom chassis; at least one flexible printed circuit board connecting the display panel to the driving circuit substrate; and a top chassis configured to cover an edge portion of a top surface and side surfaces of the display panel, wherein the top chassis has an opening formed in an area in contact with the flexible printed circuit board.
    Type: Application
    Filed: January 7, 2015
    Publication date: January 21, 2016
    Inventors: Su Young YUN, Sung Hun LEE, Joo Hyuk PARK
  • Publication number: 20150348987
    Abstract: A memory device includes a memory cell on a first region of a substrate. An active region is in a second region neighboring the first region of the substrate, and an extension direction of the active region has an acute angle with the <110> direction of the substrate. A transistor serving as a peripheral circuit is on the second region of the substrate. In the memory device, defects or failures due to a crystal defects or a dislocation of the substrate may decrease.
    Type: Application
    Filed: March 4, 2015
    Publication date: December 3, 2015
    Inventors: SUNG-HUN LEE, JONG-HO PARK, JOON-HEE LEE, HEE-JUENG LEE
  • Patent number: 9203052
    Abstract: An organic light emitting diode (OLED) device is disclosed. In one embodiment, the OLED device includes: i) a substrate and ii) a first thin film formed on the substrate, wherein the first thin film comprises first and second surfaces opposing each other, wherein the first surface contacts the substrate, and wherein a plurality of protrusions and depressions are alternately formed on the second surface of the first thin film. The OLED device may further include a second thin film formed on the protrusions and depressions of the first thin film, a first electrode formed on the second thin film, a light emitting member formed on the first electrode and a second electrode formed on the organic light emitting member.
    Type: Grant
    Filed: November 15, 2010
    Date of Patent: December 1, 2015
    Assignee: Samsung Display Co., Ltd.
    Inventors: Sung-Hun Lee, Gwan-Hyoung Lee, Chang-Woong Chu, Young-Gu Ju
  • Publication number: 20150325580
    Abstract: In a semiconductor device, a first gate structure is provided in a cell transistor region and includes a floating gate electrode, a first dielectric layer pattern, and a control gate electrode including a first metal silicide pattern. A second gate structure is provided in a selecting transistor region and includes a first conductive layer pattern, a second dielectric layer pattern, and a first gate electrode including a second metal silicide pattern. A third gate structure is provided in a peripheral circuit region and includes a second conductive layer pattern, a third dielectric layer pattern including opening portions on the second conductive layer pattern, and a second gate electrode including a concavo-convex portion at an upper surface portion thereof and a third metal silicide pattern. The third metal silicide pattern has a uniform thickness.
    Type: Application
    Filed: June 22, 2015
    Publication date: November 12, 2015
    Inventors: Sung-Hun LEE, Ki-Yong KIM, Sung-Wook PARK, Gyu-Yeol LEE
  • Publication number: 20150296848
    Abstract: The present invention relates to a method for preparing a natural kokumi flavor, and more particularly to a method of preparing a natural kokumi flavor using an inosine-5?-monophosphate (IMP) fermented broth or a glutamic acid fermented broth prepared by a two-step fermentation process comprising a first fermentation step for fungal fermentation and a second fermentation step for bacterial fermentation, a natural kokumi flavor prepared by the method, and a food composition comprising the natural kokumi flavor. The natural kokumi flavors prepared according to the method of the present invention are prepared using natural raw materials, and thus are harmless and safe for use in the human body, and may be added to food to produce thick and dense tastes and improve the flavor of the food.
    Type: Application
    Filed: February 25, 2014
    Publication date: October 22, 2015
    Inventors: Sung Hun LEE, So Youn EOM, Jae Seung PARK, Eun Seon OH, Kwang Hee LEE, Suk Min JANG, Dae Ik KANG, Won Dae CHUNG
  • Publication number: 20150272187
    Abstract: The present invention relates to a method for preparing a natural beef flavor, and more particularly to a method of preparing a natural beef flavor using an inosine-5?-monophosphate (IMP) fermented broth or a glutamic acid fermented broth prepared by a two-step fermentation process comprising a first fermentation step for fungal fermentation and a second fermentation step for bacterial fermentation, a natural beef flavor prepared by the method, and a food composition comprising the natural beef flavor. The beef flavors prepared according to the method of the present invention are prepared using natural raw materials, and thus are harmless and safe for use in the human body, and may be added to food to produce beef tastes and improve the flavor of the food.
    Type: Application
    Filed: February 25, 2014
    Publication date: October 1, 2015
    Inventors: Sung Hun Lee, So Youn Eom, Jae Seung Park, Eun Seon Oh, Kwang Hee Lee, Suk Min Jang, Dae Ik Kang, Won Dae Chung
  • Publication number: 20150272186
    Abstract: The present invention relates to a method for preparing a natural neutral flavor, and more particularly to a method of preparing a natural neutral flavor using an inosine-5?-monophosphate (IMP) fermented broth or a glutamic acid fermented broth prepared by a two-step fermentation process comprising a first fermentation step for fungal fermentation and a second fermentation step for bacterial fermentation, a natural neutral flavor prepared by the method, and a food composition comprising the natural neutral flavor. The natural neutral flavors prepared according to the method of the invention are prepared using natural raw materials, and thus are harmless and safe for use in the human body, and may be added to food to produce clean and mild tastes, and improve the flavor of the food.
    Type: Application
    Filed: February 25, 2014
    Publication date: October 1, 2015
    Inventors: Sung Hun Lee, So Youn Eom, Jae Seung Park, Eun Seon Oh, Kwang Hee Lee, Suk Min Jang, Dae Il Kang, Won Dae Chung
  • Publication number: 20150223504
    Abstract: The present invention relates to a method for preparing an inosine-5?-monophosphate (IMP) fermented broth or a glutamic acid fermented broth as a raw material for preparation of a natural flavor, and more particularly to a method of preparing an IMP fermented broth or a glutamic acid fermented broth by a first fungal fermentation step and a second bacterial fermentation step, an IMP fermented broth and glutamic acid fermented broth prepared thereby, a method for preparing a natural flavor, which comprises preparing the IMP fermented broth or glutamic acid fermented broth, a natural flavor prepared thereby, and a food composition comprising the same. The IMP fermented broth and glutamic acid fermented broth may be used as raw materials for preparing natural flavors. In addition, the natural flavors are harmless and safe for use in the human body and may be added to food.
    Type: Application
    Filed: February 25, 2014
    Publication date: August 13, 2015
    Inventors: Sung Hun Lee, So Youn Eom, Jae Seung Park, Eun Seon Oh, Kwang Hee Lee, Suk Min Jang, Dae Ik Kang, Won Dae Chung
  • Patent number: 9099304
    Abstract: A semiconductor device is provided that includes a diffusion barrier layer between a compound semiconductor layer and a dielectric layer, as well as a method of fabricating the semiconductor device, such that the semiconductor device includes a compound semiconductor layer; a dielectric layer; and a diffusion barrier layer including an oxynitride formed between the compound semiconductor layer and the dielectric layer.
    Type: Grant
    Filed: March 14, 2014
    Date of Patent: August 4, 2015
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Dong-soo Lee, Eui-chul Hwang, Seong-ho Cho, Myoung-jae Lee, Sang-moon Lee, Sung-hun Lee, Mohammad Rakib Uddin, David Seo, Moon-seung Yang, Ji-hyun Hur
  • Patent number: 9076682
    Abstract: In a semiconductor device, a first gate structure is provided in a cell transistor region and includes a floating gate electrode, a first dielectric layer pattern, and a control gate electrode including a first metal silicide pattern. A second gate structure is provided in a selecting transistor region and includes a first conductive layer pattern, a second dielectric layer pattern, and a first gate electrode including a second metal silicide pattern. A third gate structure is provided in a peripheral circuit region and includes a second conductive layer pattern, a third dielectric layer pattern including opening portions on the second conductive layer pattern, and a second gate electrode including a concavo-convex portion at an upper surface portion thereof and a third metal silicide pattern. The third metal silicide pattern has a uniform thickness.
    Type: Grant
    Filed: November 18, 2011
    Date of Patent: July 7, 2015
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Sung-Hun Lee, Ki-Yong Kim, Sung-Wook Park, Gyu-Yeol Lee
  • Publication number: 20150115321
    Abstract: A substrate structure, a complementary metal oxide semiconductor (CMOS) device including the substrate structure, and a method of manufacturing the CMOS device are disclosed, where the substrate structure includes: a substrate, at least one seed layer on the substrate formed of a material including boron (B) and/or phosphorus (P), and a buffer layer on the seed layer. This substrate structure makes it possible to reduce the thickness of the buffer layer and also improve the performance characteristics of a semiconductor device formed with the substrate structure.
    Type: Application
    Filed: October 9, 2014
    Publication date: April 30, 2015
    Inventors: Moon-seung YANG, Rakib Uddin MOHAMMAD, Myoung-jae LEE, Sang-moon LEE, Sung-hun LEE, Seong-ho CHO
  • Publication number: 20150083465
    Abstract: A transparent or conductive substrate and its manufacturing method are provided. The transparent or conductive substrate comprises a base substrate capable of light transmission; a transparent electroconductive layer formed by depositing a transparent electroconductive material; and an anti-reflection layer, wherein the anti-reflection layer is formed by using a dry etching method and comprises a plurality of spine-type structures and an anti-reflection structure formed by depositing inorganic particles.
    Type: Application
    Filed: May 7, 2012
    Publication date: March 26, 2015
    Applicant: KOREA INSTITUTE OF MACHINERY & MATERIALS
    Inventors: Jung Heum Yun, Gun Hwan Lee, Yeon Hyun Park, Sung Hun Lee
  • Publication number: 20150069352
    Abstract: Provided are an organic light-emitting diode (“OLED”) including a bottom electrode, a top electrode disposed opposite to the bottom electrode, and an organic layer that is interposed between the bottom electrode and the top electrode and includes a hole-transporting host and an electron-transporting host forming an exciplex and a phosphorescent dopant having a triplet energy which is lower than the triplet energy of the hole-transporting host, the triplet energy of the electron-transporting host, and the triplet energy of the exciplex, and a lighting device and a display apparatus including the OLED. Instead of a phosphorescent dopant, the fluorescent dopant having a singlet energy which is lower than the singlet energy of the exciplex may be also used.
    Type: Application
    Filed: April 10, 2013
    Publication date: March 12, 2015
    Applicant: SNU R&DB FOUNDATION
    Inventors: Jang Joo Kim, Young Seo Park, Sung Hun Lee, Kwon Hyeon Kim
  • Publication number: 20150069517
    Abstract: Provided are a complementary metal oxide semiconductor (CMOS) device and a method of manufacturing the same. In the CMOS device, a buffer layer is disposed on a silicon substrate, and a first layer including a group III-V material is disposed on the buffer layer. A second layer including a group IV material is disposed on the buffer layer or the silicon substrate while being spaced apart from the first layer.
    Type: Application
    Filed: April 23, 2014
    Publication date: March 12, 2015
    Inventors: Moon-seung YANG, Mohammad Rakib UDDIN, Myoung-jae LEE, Sang-moon LEE, Sung-hun LEE, Seong-ho CHO
  • Publication number: 20150061088
    Abstract: The present disclosure relates to a semiconductor device including an oxygen gettering layer between a group III-V compound semiconductor layer and a dielectric layer, and a method of fabricating the semiconductor device. The semiconductor device may include a compound semiconductor layer; a dielectric layer disposed on the compound semiconductor layer; and an oxygen gettering layer interposed between the compound semiconductor layer and the dielectric layer. The oxygen gettering layer includes a material having a higher oxygen affinity than a material of the compound semiconductor layer.
    Type: Application
    Filed: March 13, 2014
    Publication date: March 5, 2015
    Inventors: Dong-soo LEE, Myoung-Jae LEE, Seong-ho CHO, Mohammad Rakib Uddin, David SEO, Moon-seung YANG, Sang-moon LEE, Sung-hun LEE, Ji-hyun HUR, Eui-chul HWANG
  • Publication number: 20150028458
    Abstract: A semiconductor device is provided that includes a diffusion barrier layer between a compound semiconductor layer and a dielectric layer, as well as a method of fabricating the semiconductor device, such that the semiconductor device includes a compound semiconductor layer; a dielectric layer; and a diffusion barrier layer including an oxynitride formed between the compound semiconductor layer and the dielectric layer.
    Type: Application
    Filed: March 14, 2014
    Publication date: January 29, 2015
    Applicant: Samsung Electronics Co., Ltd.
    Inventors: Dong-soo Lee, Eui-chul Hwang, Seong-ho Cho, Myoung-jae Lee, Sang-moon Lee, Sung-hun Lee, Rakib Uddin Mohammad, David Seo, Moon-seung Yang, Ji-hyun Hur
  • Publication number: 20150016090
    Abstract: A backlight unit includes: a bottom chassis including a lower portion and side portions enclosing the lower portion; a light source plate to which a light source is attached; a diffuser configured to diffuse light generated from the light source; an optical sheet disposed on the diffuser and adapted to further diffuse the light diffused by the diffuser; and a first mold including a first inclined portion which is disposed between the diffuser and the optical sheet and may prevent the diffuser and the optical sheet from contacting each other, the first inclined portion may reflect light transmitted by the diffuser and emitted from the side of the diffuser toward the bottom chassis.
    Type: Application
    Filed: June 16, 2014
    Publication date: January 15, 2015
    Inventors: Ki Chang LEE, Byung Kook SIM, Sung-Hun LEE, Masaru MATSUZAWA, Hyun Su PARK
  • Patent number: 8911883
    Abstract: An organic-inorganic hybrid electroluminescent device having a semiconductor nanocrystal pattern prepared by producing a semiconductor nanocrystal film using semiconductor nanocrystals, where the nanocrystal is surface-coordinated with a compound containing a photosensitive functional group, exposing the film through a mask and developing the exposed film.
    Type: Grant
    Filed: July 17, 2008
    Date of Patent: December 16, 2014
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Jong Jin Park, Eun Joo Jang, Shin Ae Jun, Tae Kyung Ahn, Sung Hun Lee
  • Publication number: 20140340855
    Abstract: In one embodiment, the display device includes a display panel and a support frame. The display panel includes a flexible upper substrate, at least one light emitting diode, and a flexible lower substrate (30). The display panel has a display area formed at a portion corresponding to the light emitting diode, and a non-display area formed at a portion other than the display area. The display panel is coupled to the support frame such that a portion of the non-display area is bent with respect to the display area.
    Type: Application
    Filed: August 1, 2014
    Publication date: November 20, 2014
    Applicant: KOREA INSTITUTE OF MACHINERY & MATERIALS
    Inventors: Gun-Hwan LEE, Jung-Heum YUN, Sung-Hun LEE
  • Patent number: 8827536
    Abstract: In one embodiment, the display device includes a display panel and a support frame. The display panel includes a flexible upper substrate, at least one light emitting diode, and a flexible lower substrate (30). The display panel has a display area formed at a portion corresponding to the light emitting diode, and a non-display area formed at a portion other than the display area. The display panel is coupled to the support frame such that a portion of the non-display area is bent with respect to the display area.
    Type: Grant
    Filed: February 22, 2013
    Date of Patent: September 9, 2014
    Assignee: Korea Institute of Machinery & Materials
    Inventors: Gun-Hwan Lee, Jung-Heum Yun, Sung-Hun Lee