Abstract: The control system for an automatic transmission may include, a detecting portion of driving information adapted to detect the driving information including a temperature of an engine coolant, temperature of a transmission oil, a positional change of an accelerator pedal, a current shift-speed, and driving speed. a control portion adapted to determine a virtual positional change of the accelerator pedal based on an actual positional change of the accelerator pedal and a tip-in speed transmitted from the detecting portion of driving information, to determine a target shift-speed according to the actual positional change of the accelerator pedal or the virtual positional change of the accelerator pedal and the driving speed, and to control a shift to the target shift-speed. an actuator adapted to engage the target shift-speed according to a control signal received from the control portion.

Abstract: A nonvolatile memory device includes a substrate, a structure including a stack of alternately disposed layers of conductive and insulation materials disposed on the substrate, a plurality of pillars extending through the structure in a direction perpendicular to the substrate and into contact with the substrate, and information storage films interposed between the layers of conductive material and the pillars. In one embodiment, upper portions of the pillars located at the same level as an upper layer of the conductive material have structures that are different from lower portions of the pillars. In another embodiment, or in addition, upper string selection transistors constituted by portions of the pillars at the level of an upper layer of the conductive material are programmed differently from lower string selection transistors.

Abstract: An ultrasonic horn and a secondary battery manufactured using the ultrasonic horn are disclosed. The ultrasonic horn has a pressing surface at an end thereof, the ultrasonic horn including a protrusion part disposed on the pressing surface, the protrusion part including a first protrusion row that includes a plurality of protrusions consecutively arranged along a first direction, and a second protrusion row that includes a plurality of protrusions consecutively arranged along the first direction and is separated from the first protrusion row by a predetermined distance in a second direction that is different from the first direction.

Abstract: A floating gate type nonvolatile memory device comprises a semiconductor layer, wordlines crossing over the semiconductor layer, and a memory element disposed between the wordlines and facing the semiconductor layer.

Abstract: A method and a system for correcting an engine torque based on a vehicle load may include: determining whether a vehicle load determination condition is satisfied continuously for a predetermined maintaining time, determining an average engine torque for the predetermined maintaining time if the vehicle load determination condition is satisfied continuously, determining whether the average engine torque is larger than a predetermined engine torque, determining a ratio of the average engine torque and the predetermined engine torque if the average engine torque is larger than the predetermined engine torque, determining a correction factor using the ratio of the average engine torque and the predetermined engine torque, and determining the engine torque using the correction factor and a predetermined normal torque filter.

Abstract: Disclosed is a simulation test system and method for testing a vehicle electronic component capable of easily testing performance of the electronic component anytime regardless of location without repeating the same driving test.

Abstract: There is provided a nitride semiconductor light emitting device. A nitride semiconductor light emitting device according to an aspect of the invention may include: an n-type nitride semiconductor layer provided on a substrate; an active layer provided on the n-type nitride semiconductor layer, and including quantum barrier layers and quantum well layers; and a p-type nitride semiconductor layer provided on the active layer, wherein each of the quantum barrier layers includes a plurality of InxGa(1-x)N layers (0<x<1) and at least one AlyGa(1-y)N layer (0?y<1), and the AlyGa(1-y)N layer is stacked between the InxGa(1-x)N layers.

Abstract: Disclosed is a method for manufacturing a template. The method includes growing a first nitride layer containing a Group-III material on a substrate; forming a plurality of etch barriers having different etching characteristics from the first nitride layer on the first nitride layer; forming a pillar-shaped nano structure by etching the first nitride layer in a pattern of the etch barriers using a chloride-based gas; and forming the nitride buffer layer having a plurality of voids formed therein by growing a second nitride layer on top of the nano structure. A method for manufacturing a nitride-based semiconductor light emitting device using the template is also disclosed.

Abstract: Disclosed herein is a method for manufacturing a template. The method includes growing a first nitride layer on a substrate; etching a top surface of the first nitride layer by supplying a chloride-based etching gas thereto; forming a plurality of first voids by growing a second nitride layer on the top surface of the first nitride layer; etching a top surface of the second nitride layer by supplying the etching gas thereto; and forming a plurality of second voids by growing a third nitride layer on the top surface of the second nitride layer. A method for manufacturing a nitride-based semiconductor light emitting device using the template is also disclosed. As a result, stress between lattices and dislocation defects are reduced by a plurality of voids formed in a nitride buffer layer, thereby improving quality of nitride layers grown in a template.

Abstract: A nonvolatile memory device includes a substrate, a structure including a stack of alternately disposed layers of conductive and insulation materials disposed on the substrate, a plurality of pillars extending through the structure in a direction perpendicular to the substrate and into contact with the substrate, and information storage films interposed between the layers of conductive material and the pillars. In one embodiment, upper portions of the pillars located at the same level as an upper layer of the conductive material have structures that are different from lower portions of the pillars. In another embodiment, or in addition, upper string selection transistors constituted by portions of the pillars at the level of an upper layer of the conductive material are programmed differently from lower string selection transistors.

Abstract: An apparatus and method for detecting a communication abnormality in a multi-type air conditioner is disclosed. The apparatus, which performs data communication with peripheral devices having an outdoor unit, a plurality of indoor units, a repeater and a wired remote controller, includes a level converter for serving as an interface to allow multiplex communication between the apparatus and the peripheral devices; and an abnormality detector connectable with the peripheral devices from a remote site through the level converter, the abnormality detector detecting a communication abnormality in the peripheral devices by automatically changing an operation mode thereof into a slave or master mode depending on whether an operation mode of each of the peripheral devices connected thereto is the master or slave mode. Thus, when the communication abnormality occurs, the communication abnormality can be detected in a convenient way by using the apparatus.

Abstract: A method of manufacturing a three-dimensional semiconductor memory device comprises forming a thin layer structure by alternately stacking first and second material layers on a substrate, forming a penetration dent penetrating the thin layer structure and exposing a top surface of the substrate recessed by the penetration dent, forming a vertical insulation layer penetrating the thin layer structure to cover an inner wall of the penetration dent, forming a semiconductor pattern penetrating the vertical insulation layer at the penetration dent to be inserted into the substrate, and forming an oxide layer between the thin layer structure and the substrate by oxidizing a sidewall of the penetration dent.

Abstract: A nitride semiconductor light emitting diode (LED) is disclosed. The nitride semiconductor LED can include an active layer formed between an n-type nitride layer and a p-type nitride layer, where the active layer includes two or more quantum well layers and quantum barrier layers formed in alternation, and the quantum barrier layer formed adjacent to the p-type nitride layer is thinner than the remaining quantum barrier layers. An embodiment of the invention can be used to improve optical efficiency while providing crystallinity in the active layer.

Abstract: A floating gate type nonvolatile memory device comprises a semiconductor layer, wordlines crossing over the semiconductor layer, and a memory element disposed between the wordlines and facing the semiconductor layer.

Abstract: In a method for fabricating a nitride-based compound layer, first, a GaN substrate is prepared. A mask layer with a predetermined pattern is formed on the GaN substrate to expose a partial area of the GaN substrate. Then a buffer layer is formed on the partially exposed GaN substrate. The buffer layer is made of a material having a 10% or less lattice mismatch with GaN. Thereafter, the nitride-based compound is grown laterally from a top surface of the buffer layer toward a top surface of the mask layer and the nitride-based compound layer is vertically grown to a predetermined thickness. Also, the mask layer and the buffer layer are removed via wet-etching to separate the nitride-based compound layer from the GaN substrate.

Abstract: Disclosed are a nitride based semiconductor device, including a high-quality GaN layer formed on a silicone substrate, and a process for preparing the same. A nitride based semiconductor device in accordance with the present invention comprises a plurality of nanorods aligned and formed on the silicone substrate in the vertical direction; an amorphous matrix layer filling spaces between nanorods so as to protrude some upper portion of the nanorods; and a GaN layer formed on the matrix layer.

Abstract: A nitride semiconductor light emitting diode (LED) is disclosed. The nitride semiconductor LED can include an active layer formed between an n-type nitride layer and a p-type nitride layer, where the active layer includes two or more quantum well layers and quantum barrier layers formed in alternation, and the quantum barrier layer formed adjacent to the p-type nitride layer is thinner than the remaining quantum barrier layers. An embodiment of the invention can be used to improve optical efficiency while providing crystallinity in the active layer.

Abstract: A chemical vapor deposition apparatus includes a substrate ceiling unit forming a reaction chamber to which a reaction gas is supplied to epitaxially grow a substrate, and an exhaust unit separated from the substrate ceiling unit and serving to discharge an exhaust gas after epitaxial growth reaction. The exhaust unit includes a particle formation part to which particles generated in the epitaxial growth of the substrate are attached.

Abstract: Disclosed are a nitride based semiconductor device, including a high-quality GaN layer formed on a silicon substrate, and a process for preparing the same. A nitride based semiconductor device in accordance with the present invention comprises a plurality of nanorods aligned and formed on the silicone substrate in the vertical direction; an amorphous matrix layer filling spaces between nanorods so as to protrude some upper portion of the nanorods; and a GaN layer formed on the matrix layer.

Abstract: Provided are a susceptor and a chemical vapor deposition (CVD) apparatus including the susceptor. The susceptor has a simple structure and is configured to prevent bending of a substrate for uniformly heating the substrate and maintain wavelength uniformity of an epitaxial layer formed on the substrate.