Abstract: There is provided a nitride semiconductor light emitting device. A nitride semiconductor light emitting device according to an aspect of the invention may include: an n-type nitride semiconductor layer provided on a substrate; an active layer provided on the n-type nitride semiconductor layer, and including quantum barrier layers and quantum well layers; and a p-type nitride semiconductor layer provided on the active layer, wherein each of the quantum barrier layers includes a plurality of InxGa(1-x)N layers (0<x<1) and at least one AlyGa(1-y)N layer (0?y<1), and the AlyGa(1-y)N layer is stacked between the InxGa(1-x)N layers.

Abstract: Disclosed are a nitride based semiconductor device, including a high-quality GaN layer formed on a silicone substrate, and a process for preparing the same. A nitride based semiconductor device in accordance with the present invention comprises a plurality of nanorods aligned and formed on the silicone substrate in the vertical direction; an amorphous matrix layer filling spaces between nanorods so as to protrude some upper portion of the nanorods; and a GaN layer formed on the matrix layer.

Abstract: In a method for fabricating a nitride-based compound layer, first, a GaN substrate is prepared. A mask layer with a predetermined pattern is formed on the GaN substrate to expose a partial area of the GaN substrate. Then a buffer layer is formed on the partially exposed GaN substrate. The buffer layer is made of a material having a 10% or less lattice mismatch with GaN. Thereafter, the nitride-based compound is grown laterally from a top surface of the buffer layer toward a top surface of the mask layer and the nitride-based compound layer is vertically grown to a predetermined thickness. Also, the mask layer and the buffer layer are removed via wet-etching to separate the nitride-based compound layer from the GaN substrate.

Abstract: In a method for fabricating a nitride-based compound layer, first, a GaN substrate is prepared. A mask layer with a predetermined pattern is formed on the GaN substrate to expose a partial area of the GaN substrate. Then a buffer layer is formed on the partially exposed GaN substrate. The buffer layer is made of a material having a 10% or less lattice mismatch with GaN. Thereafter, the nitride-based compound is grown laterally from a top surface of the buffer layer toward a top surface of the mask layer and the nitride-based compound layer is vertically grown to a predetermined thickness. Also, the mask layer and the buffer layer are removed via wet-etching to separate the nitride-based compound layer from the GaN substrate.

Abstract: Disclosed is a simulation test system and method for testing a vehicle electronic component capable of easily testing performance of the electronic component anytime regardless of location without repeating the same driving test.

Abstract: A method for diagnosing an error of a vehicle electronic component capable of being performed without an actual driving test by building up a database of unusual waveform data that generates an erroneous operation of a vehicle electronic component is disclosed. The unusual waveform data are obtained through a process simultaneously collecting input and output waveforms of a problematic component in operation in real time in a state where the problematic component is electrically connected to a vehicle; a process analyzing the output waveforms to obtain information on a point in time of generation of an unusual output waveform that causes an erroneous operation of the problematic component; and a process extracting input waveforms during a predetermined time before and after the point of time of generation of the unusual output waveform using the information on the point in time.

Abstract: An apparatus and method for detecting a communication abnormality in a multi-type air conditioner is disclosed. The apparatus, which performs data communication with peripheral devices having an outdoor unit, a plurality of indoor units, a repeater and a wired remote controller, includes a level converter for serving as an interface to allow multiplex communication between the apparatus and the peripheral devices; and an abnormality detector connectable with the peripheral devices from a remote site through the level converter, the abnormality detector detecting a communication abnormality in the peripheral devices by automatically changing an operation mode thereof into a slave or master mode depending on whether an operation mode of each of the peripheral devices connected thereto is the master or slave mode. Thus, when the communication abnormality occurs, the communication abnormality can be detected in a convenient way by using the apparatus.

Abstract: An image processing apparatus includes a color extracting part that receives an image signal and extracts a color signal from the received image signal; and a converting part that detects a saturation of a pixel of the color signal, determines whether the saturation of the pixel is higher or lower than a reference saturation, increases the saturation of the pixel based on a conversion function if the saturation of the pixel is higher than the reference saturation, and decreases the saturation of the pixel based on the conversion function if the saturation of the pixel is lower than the reference saturation.

Abstract: A method and apparatus are provided for adjusting the contrast ratio in a display apparatus. The display apparatus includes a signal input module which receives a video signal and a signal processing module which processes the video signal received from the signal input module. A display module has a display panel and a panel driver for driving the display panel, and a controlling module calculates the luminance of the video signal and controls at least one of the signal processing module and the panel driver to adjust a contrast ratio of the video signal output to the display panel based on the mean of the calculated luminance.

Abstract: A method and apparatus for manufacturing a nitride based single crystal substrate. The method includes placing a preliminary substrate on a susceptor installed in a reaction chamber; growing a nitride single crystal layer on the preliminary substrate; and irradiating a laser beam to separate the nitride single crystal layer from the preliminary substrate under the condition that the preliminary substrate is placed in the reaction chamber.

Abstract: A display apparatus having a displayer which displays a picture and a brightness adjuster which adjusts a brightness of the displayer, including: an optical sensor detecting circumferential brightness; and a controller calculating criterion brightness data of the displayer on a basis of the circumferential brightness, and calculating brightness data of the displayer according to a variation of the circumferential brightness on a basis of the criterion brightness data so as to control the brightness adjuster to adjust the brightness of the displayer according to the brightness data.

Abstract: A heater assembly that is capable of uniformly heating a wafer in an apparatus for manufacturing a semiconductor device is provided. The heater assembly preferably includes a susceptor configured to support a substrate (wafer). A plurality of heaters can be disposed under the susceptor to heat the wafer. A support is preferably disposed below the heaters to support the heaters, and a power supply provides an electric current to operate the heaters. The support can include a heat-shielding portion that restricts heat conduction between the heaters. The heat-shielding portion preferably comprises heat-resistant material arranged in a groove formed on the support. The heat-shielding portion also preferably supports adjacent peripheral portions of the heaters. Electrical current provided to the heaters is preferably controlled such that the temperature of the heaters are operated in a range of about 390° C. to 420° C.

Abstract: A heater assembly that is capable of uniformly heating a wafer in an apparatus for manufacturing a semiconductor device is provided. The heater assembly preferably includes a susceptor configured to support a substrate (wafer). A plurality of heaters can be disposed under the susceptor to heat the wafer. A support is preferably disposed below the heaters to support the heaters, and a power supply provides an electric current to operate the heaters. The support can include a heat-shielding portion that restricts heat conduction between the heaters. The heat-shielding portion preferably comprises heat-resistant material arranged in a groove formed on the support. The heat-shielding portion also preferably supports adjacent peripheral portions of the heaters. Electrical current provided to the heaters is preferably controlled such that the temperature of the heaters are operated in a range of about 390° C. to 420° C.

Abstract: A module device testing apparatus and method that is adaptive for testing a large number of module devices at the same time. In the apparatus and method, a plurality of module devices is entered into a high-temperature tunnel with at least two layers. A test of the module devices is performed within the high-temperature tunnel. The module devices having completed the high temperature test are derived from the high-temperature tunnel.