Abstract: A transferring system for huge and high quality images on network and a method thereof are disclosed, wherein various individual image data are converted into high quality image data to be converted into layered image data, and classified into a plurality of sub cells, then stored in database as a compressed form. A client system connected to a server requires information, immediately downloads the required information, releases the compression, and then displays on a screen real time. In the present invention, a user can fast see only his wanted part since images of a newspaper and a magazine are converted as they were. Also, various additional information is provided with image, thereby providing multimedia digital publication services on wire or wireless network.

Abstract: The present invention relates to new antibody-drug conjugates (ADCs) targeting DLK1, active metabolites of such ADCs, methods for preparation of such ADCs, uses for such ADCs in treatment and/or prevention of illnesses, and uses for such ADCs in production of drugs for treatment and/or prevention of diseases, more specifically, uses for such ADCs in producing drugs for treatment and/or prevention of proliferative and/or angiogenetic diseases, for example, cancer. More particularly, the present invention relates to an antibody-drug conjugate comprising an antibody binding with DLK1 or an antigen-binding fragment thereof, and a pharmaceutical composition comprising the same.

Abstract: A semiconductor device includes a base substrate, a first electrode plate on the base substrate, a first power rail on the first electrode plate, the first power rail extending in a first horizontal direction and overlapping the first electrode plate in a vertical direction, a second power rail on the first electrode plate, the second power rail extending in the first horizontal direction and overlapping the first electrode plate in the vertical direction, and the second power rail being spaced apart from the first power rail in a second horizontal direction different from the first horizontal direction, a first power rail contact electrically connecting the first electrode plate and the first power rail, an insulating layer on the base substrate to surround the first electrode plate, the first power rail, and the second power rail, and a gate electrode extending in the second horizontal direction on the insulating layer.

Abstract: Semiconductor devices and methods of forming the semiconductor devices are provided. The methods may include forming a fin, forming a first device isolating layer on a side of the fin, forming a second device isolating layer extending through the first device isolating layer, forming first and second gates traversing the fin and forming a third device isolating layer between the first and second gates. The first device isolating layer may include a first material and a lowermost surface at a first depth. The second device isolating layer may include a second material and a lowermost surface at a second depth greater than the first depth. The third device isolating layer may extend into the fin, may include a lowermost surface at a third depth less than the first depth and a third material different from the first and the second materials.

Abstract: Disclosed is a self-extinguishing power cable with microcapsules and a method for manufacturing the same. A method of manufacturing a self-extinguishing power cable with a microcapsule, the method includes applying a mixed solution of water-soluble adhesive, a magnetic powder and a swellable powder on one surface of a first nonwoven fabric; magnetically treating and drying the first nonwoven fabric; pressing one surface of a second nonwoven fabric on the one surface of the first nonwoven fabric to form a single nonwoven fabric; and forming the single nonwoven fabric into a neutral conductor water blocking layer of an electrical power cable to manufacture the electrical power cable, wherein the microcapsule is provided between the first nonwoven fabric and the second nonwoven fabric.

Abstract: In some aspects, the invention relates to an antibody-drug conjugate, comprising an antibody; a linker; and an active agent. The antibody-drug conjugate may comprise a self-immolative group. The linker may comprise an O-substituted oxime, e.g., wherein the oxygen atom of the oxime is substituted with a group that covalently links the oxime to the active agent; and the carbon atom of the oxime is substituted with a group that covalently links the oxime to the antibody.

Abstract: Provided is a semiconductor device. The semiconductor device comprises a first active pattern extending in a first direction on a substrate, a second active pattern which extends in the first direction and is adjacent to the first active pattern in a second direction different from the first direction, a field insulating film placed between the first active pattern and the second active pattern, a first gate structure which crosses the first active pattern, extends in the second direction, and includes a first gate electrode and a first gate spacer, a second gate structure which crosses the second active pattern, extends in the second direction, and includes a second gate electrode and a second gate spacer, a gate separation structure placed on the field insulating film between the first gate structure and the second gate structure.

Abstract: Disclosed is a method and system for transfer learning of a deep learning model based on a document similarity learning. A transfer learning method may include pre-training, by the at least one processor, a similarity model to output a similarity between documents, generating, by the at least one processor, a fine tuning model by replacing a first output function of the pre-trained similarity model with a second output function, and training, by the at least one processor, the fine tuning model to output a score for a document input to the fine tuning model.

Abstract: A crystallized glass includes crystalline and vitreous structures, in which the crystalline structure includes lithium disilicate as a main crystalline phase and at least one crystalline phase among lithium phosphonate (Li3PO4), lithium metasilicate (Li2SiO3), silica (SiO2), and zirconia (ZrO2) as a sub-crystalline phase, has an excellent processability and an excellent plasma corrosion resistance, thereby being useful as a material for production of parts for various dry etching apparatuses.

Abstract: The present disclosure relates to pyrrolobenzodiazepine dimer prodrugs and ligand-linker conjugates thereof. The present disclosure also relates to compositions and uses of said prodrugs and conjugates.

Abstract: The present invention relates to antibody-drug conjugates (ADCs) wherein a plurality of active agents are conjugated to an antibody through at least one branched linker. The branched linker may comprise a branching unit, and two active agents are coupled to the branching unit through a secondary linker and the branching unit is coupled to the antibody by a primary linker. The active agents may be the same or different. In certain such embodiments, two or more such branched linkers are conjugated to the antibody, e.g., 2-4 branched linkers, which may each be coupled to a different C-terminal cysteine of a heavy or light chain of the antibody. The branched linker may comprise one active agent coupled to the branching unit by a first branch and a second branch that comprises a polyethylene glycol moiety coupled to the branching unit. In certain such embodiments, two or more such branched linkers are conjugated to the antibody, e.g.

Abstract: Semiconductor devices are provided. A semiconductor device includes a substrate including a device region defined by a trench in the substrate. The semiconductor device includes a plurality of fin-shaped active regions spaced apart from each other in the device region and extending in a first direction. The semiconductor device includes a protruding pattern extending along a bottom surface of the trench. Moreover, an interval between the protruding pattern and the plurality of fin-shaped active regions is greater than an interval between two adjacent ones of the plurality of fin-shaped active regions.

Abstract: According to various embodiments of the present invention, a head mounting device (HMD) may comprise: a facial wearing part which is worn on a user's face and outputs an image to both of a user's eyes; a wearing band part mounted on an upper side of the facial wearing part; and a support part which is mounted on the wearing band part to support a user's head, wherein the facial wearing part may comprise a housing in which an optical device is disposed, a guide member which extends over a first surface of the housing and is formed corresponding to a contour of the user's face, and a fixing plate which is mounted on the housing with a part of the guide member interposed between the fixing plate and the housing so as to fix the guide member to the housing. The head mounting device as mentioned above can be various according to embodiments.

Abstract: A semiconductor device includes an active fin extending in a first direction on a substrate, a gate electrode intersecting the active fin and extending in a second direction, source/drain regions disposed on the active fin on both sides of the gate electrode, and a contact plug disposed on the source/drain regions. The contact plug has at least one side extending in the second direction which has a step portion having a step shape.

Abstract: The present invention relates to a novel pyrrolobenzodiazepine dimer compound or a pharmaceutically acceptable salt thereof, a ligand-drug conjugate compound thereof, or a composition containing the same and therapeutic use of the same as an anticancer agent. The pyrrolobenzodiazepine dimer compound according to the present invention exhibits anticancer activity equivalent to or superior to that of existing anticancer agents when being applied to a ligand-drug conjugate as a drug and administered as well as exhibits low activity and greatly diminished toxicity in the free toxin form and thus has a significantly improved therapeutic index. Hence, the pyrrolobenzodiazepine dimer compound is highly industrially applicable in that targeting of proliferative diseases such as cancer is possible, specific treatment of the proliferative diseases is possible, the drug efficacy can be maximized, and the expression of side effects can be minimized.

Abstract: A semiconductor device is provided. The semiconductor device includes a substrate comprising an element isolation region and an active region defined by the element isolation region, a fin-type pattern on the active region, the fin-type pattern extending in a first horizontal direction, a gate electrode on the fin-type pattern, the gate electrode extending in a second horizontal direction that crosses the first horizontal direction, a capping pattern on the gate electrode, a source/drain region on at least one side of the gate electrode, a source/drain contact on the source/drain region and electrically connected to the source/drain region, and a filling insulating layer on the source/drain contact, the filling insulating layer having a top surface at a same level as a top surface of the capping pattern, and including a material containing a carbon (C) atom.

Abstract: Provided is an electricity generating module. The electricity generating module comprises: a cylinder; a piston that reciprocates inside the cylinder; and a power generating fiber of which one end is fixed to the piston and the other end is fixed to the cylinder, and of which the length varies according to the reciprocating of the piston, wherein, as the length of the power generating fiber varies, a potential value of the power generating fiber varies, and electricity is generated by using the varied potential value of the power generating fiber.

Abstract: Semiconductor devices are provided. A semiconductor device includes a fin structure including a stress structure and a semiconductor region that are sequentially stacked on a substrate. The semiconductor device includes a field insulation layer on a portion of the fin structure. The semiconductor device includes a gate electrode on the fin structure. Moreover, the stress structure includes an oxide.

Abstract: Semiconductor devices and methods of forming the semiconductor devices are provided. The methods may include forming a fin, forming a first device isolating layer on a side of the fin, forming a second device isolating layer extending through the first device isolating layer, forming first and second gates traversing the fin and forming a third device isolating layer between the first and second gates. The first device isolating layer may include a first material and a lowermost surface at a first depth. The second device isolating layer may include a second material and a lowermost surface at a second depth greater than the first depth. The third device isolating layer may extend into the fin, may include a lowermost surface at a third depth less than the first depth and a third material different from the first and the second materials.

Abstract: An embodiment relates to a sensing device comprising: a rotor; and a stator arranged on the outer side of the rotor, wherein the stator comprises a stator holder and a stator ring arranged on the stator holder; the stator ring comprises a body, a plurality of teeth formed to protrude from the inner peripheral surface of the body, and a protrusion part formed to protrude from the outer peripheral surface of the body; and, when seen in the radial direction, the protrusion part is arranged between the teeth and comprises at least two protrusions arranged to be spaced from each other. Accordingly, the coupling force between the stator holder and the stator ring can be improved.