Abstract: A crystallized glass includes crystalline and vitreous structures, in which the crystalline structure includes lithium disilicate as a main crystalline phase and at least one crystalline phase among lithium phosphonate (Li3PO4), lithium metasilicate (Li2SiO3), silica (SiO2), and zirconia (ZrO2) as a sub-crystalline phase, has an excellent processability and an excellent plasma corrosion resistance, thereby being useful as a material for production of parts for various dry etching apparatuses.

Abstract: The present disclosure relates to pyrrolobenzodiazepine dimer prodrugs and ligand-linker conjugates thereof. The present disclosure also relates to compositions and uses of said prodrugs and conjugates.

Abstract: The present invention relates to antibody-drug conjugates (ADCs) wherein a plurality of active agents are conjugated to an antibody through at least one branched linker. The branched linker may comprise a branching unit, and two active agents are coupled to the branching unit through a secondary linker and the branching unit is coupled to the antibody by a primary linker. The active agents may be the same or different. In certain such embodiments, two or more such branched linkers are conjugated to the antibody, e.g., 2-4 branched linkers, which may each be coupled to a different C-terminal cysteine of a heavy or light chain of the antibody. The branched linker may comprise one active agent coupled to the branching unit by a first branch and a second branch that comprises a polyethylene glycol moiety coupled to the branching unit. In certain such embodiments, two or more such branched linkers are conjugated to the antibody, e.g.

Abstract: Semiconductor devices are provided. A semiconductor device includes a substrate including a device region defined by a trench in the substrate. The semiconductor device includes a plurality of fin-shaped active regions spaced apart from each other in the device region and extending in a first direction. The semiconductor device includes a protruding pattern extending along a bottom surface of the trench. Moreover, an interval between the protruding pattern and the plurality of fin-shaped active regions is greater than an interval between two adjacent ones of the plurality of fin-shaped active regions.

Abstract: According to various embodiments of the present invention, a head mounting device (HMD) may comprise: a facial wearing part which is worn on a user's face and outputs an image to both of a user's eyes; a wearing band part mounted on an upper side of the facial wearing part; and a support part which is mounted on the wearing band part to support a user's head, wherein the facial wearing part may comprise a housing in which an optical device is disposed, a guide member which extends over a first surface of the housing and is formed corresponding to a contour of the user's face, and a fixing plate which is mounted on the housing with a part of the guide member interposed between the fixing plate and the housing so as to fix the guide member to the housing. The head mounting device as mentioned above can be various according to embodiments.

Abstract: A semiconductor device includes an active fin extending in a first direction on a substrate, a gate electrode intersecting the active fin and extending in a second direction, source/drain regions disposed on the active fin on both sides of the gate electrode, and a contact plug disposed on the source/drain regions. The contact plug has at least one side extending in the second direction which has a step portion having a step shape.

Abstract: The present invention relates to a novel pyrrolobenzodiazepine dimer compound or a pharmaceutically acceptable salt thereof, a ligand-drug conjugate compound thereof, or a composition containing the same and therapeutic use of the same as an anticancer agent. The pyrrolobenzodiazepine dimer compound according to the present invention exhibits anticancer activity equivalent to or superior to that of existing anticancer agents when being applied to a ligand-drug conjugate as a drug and administered as well as exhibits low activity and greatly diminished toxicity in the free toxin form and thus has a significantly improved therapeutic index. Hence, the pyrrolobenzodiazepine dimer compound is highly industrially applicable in that targeting of proliferative diseases such as cancer is possible, specific treatment of the proliferative diseases is possible, the drug efficacy can be maximized, and the expression of side effects can be minimized.

Abstract: A semiconductor device is provided. The semiconductor device includes a substrate comprising an element isolation region and an active region defined by the element isolation region, a fin-type pattern on the active region, the fin-type pattern extending in a first horizontal direction, a gate electrode on the fin-type pattern, the gate electrode extending in a second horizontal direction that crosses the first horizontal direction, a capping pattern on the gate electrode, a source/drain region on at least one side of the gate electrode, a source/drain contact on the source/drain region and electrically connected to the source/drain region, and a filling insulating layer on the source/drain contact, the filling insulating layer having a top surface at a same level as a top surface of the capping pattern, and including a material containing a carbon (C) atom.

Abstract: Semiconductor devices and methods of forming the semiconductor devices are provided. The methods may include forming a fin, forming a first device isolating layer on a side of the fin, forming a second device isolating layer extending through the first device isolating layer, forming first and second gates traversing the fin and forming a third device isolating layer between the first and second gates. The first device isolating layer may include a first material and a lowermost surface at a first depth. The second device isolating layer may include a second material and a lowermost surface at a second depth greater than the first depth. The third device isolating layer may extend into the fin, may include a lowermost surface at a third depth less than the first depth and a third material different from the first and the second materials.

Abstract: Semiconductor devices are provided. A semiconductor device includes a fin structure including a stress structure and a semiconductor region that are sequentially stacked on a substrate. The semiconductor device includes a field insulation layer on a portion of the fin structure. The semiconductor device includes a gate electrode on the fin structure. Moreover, the stress structure includes an oxide.

Abstract: Provided is an electricity generating module. The electricity generating module comprises: a cylinder; a piston that reciprocates inside the cylinder; and a power generating fiber of which one end is fixed to the piston and the other end is fixed to the cylinder, and of which the length varies according to the reciprocating of the piston, wherein, as the length of the power generating fiber varies, a potential value of the power generating fiber varies, and electricity is generated by using the varied potential value of the power generating fiber.

Abstract: An embodiment relates to a sensing device comprising: a rotor; and a stator arranged on the outer side of the rotor, wherein the stator comprises a stator holder and a stator ring arranged on the stator holder; the stator ring comprises a body, a plurality of teeth formed to protrude from the inner peripheral surface of the body, and a protrusion part formed to protrude from the outer peripheral surface of the body; and, when seen in the radial direction, the protrusion part is arranged between the teeth and comprises at least two protrusions arranged to be spaced from each other. Accordingly, the coupling force between the stator holder and the stator ring can be improved.

Abstract: A semiconductor device includes a substrate with first and second regions separated from each other, a laminate structure including at least one sacrificial layer and at least one active layer alternately stacked on the substrate, a first isolation insulating layer on the laminate structure on the first region, a second isolation insulating layer on the laminate structure on the second region, the second isolation insulating layer having a same thickness as the first isolation insulating layer, a first upper active pattern spaced apart from the first isolation insulating layer, a first gate electrode surrounding at least a portion of the first upper active pattern, a second upper active pattern spaced apart from the second isolation insulating layer, and a second gate electrode surrounding at least a portion of the second upper active pattern, wherein top surfaces of the first and second isolation insulating layers are at different heights.

Abstract: A plug as an electrical connector according to the present disclosure includes a box-shaped housing and a lock lever having an arm in such a manner that a base end of the arm is rotatable, and the lock lever is configured to pull the mating housing inside the box-shaped housing. On a side face of the box-shaped housing, a projection is provided which can be hidden from the side face thereof. A recess is provided in an intermediate portion of the arm of the lock lever, and the projection can be introduced and the rotation of the lock lever in the one direction can be prevented. The recess includes a bottom wall (first inner wall) and a side wall (second inner wall) formed therein which can be pressed by the projection by a rotational force of the lock lever in one direction being divided.

Abstract: Disclosed is a steel sheet for hot press forming, which includes: a base steel sheet; and a plating layer disposed on the base steel sheet and including a diffusion layer and a surface layer that are sequentially laminated, wherein the diffusion layer includes an Fe—Al alloy layer and an Fe—Al intermetallic compound layer that are sequentially disposed on the base steel sheet and each include silicon, and an area fraction of the Fe—Al intermetallic compound layer with respect to the diffusion layer is 84.5% to 98.0%.

Abstract: Disclosed is a steel sheet for hot press forming, which includes: a base steel sheet; and a plating layer disposed on the base steel sheet and including a diffusion layer and a surface layer that are sequentially laminated, wherein the diffusion layer includes an Fe—Al alloy layer and an Fe—Al intermetallic compound layer that are sequentially disposed on the base steel sheet and each include silicon, and an area fraction of the Fe—Al intermetallic compound layer with respect to the diffusion layer is 84.5% to 98.0%.

Abstract: A semiconductor device includes an active fin extending in a first direction on a substrate, a gate electrode intersecting the active fin and extending in a second direction, source/drain regions disposed on the active fin on both sides of the gate electrode, and a contact plug disposed on the source/drain regions. The contact plug has at least one side extending in the second direction which has a step portion having a step shape.

Abstract: A device includes a lower semiconductor substrate, a lower gate structure on the lower semiconductor substrate, the lower gate structure comprises a lower gate electrode, a lower interlayer insulating film on the lower semiconductor substrate, an upper semiconductor substrate on the lower interlayer insulating film, an upper gate structure on the upper semiconductor substrate, and an upper interlayer insulating film on the lower interlayer insulating film, the upper interlayer insulating film covers sidewalls of the upper semiconductor substrate The upper gate structure comprises an upper gate electrode extending in a first direction and gate spacers along sidewalls of the upper gate electrode. The upper gate electrode comprises long sidewalls extending in the first direction and short sidewalls in a second direction The gate spacers are on the long sidewalls of the upper gate electrode and are not disposed on the short sidewalls of the upper gate electrode.

Abstract: The present invention relates to a Doherty combiner used in a Doherty power amplifier, the Doherty combiner comprising: a phase shift section connected to one end of a carrier amplifier so as to change a phase of an RF signal output from the carrier amplifier; a matching section connected to an output terminal of the Doherty power amplifier so as to impedance-match an output of the Doherty power amplifier; and a bandwidth improvement section connected to one end of a peaking amplifier so as to change at least one of a phase bandwidth and an amplitude bandwidth of the Doherty power amplifier.

Abstract: Semiconductor devices and methods of forming the semiconductor devices are provided. The methods may include forming a fin, forming a first device isolating layer on a side of the fin, forming a second device isolating layer extending through the first device isolating layer, forming first and second gates traversing the fin and forming a third device isolating layer between the first and second gates. The first device isolating layer may include a first material and a lowermost surface at a first depth. The second device isolating layer may include a second material and a lowermost surface at a second depth greater than the first depth. The third device isolating layer may extend into the fin, may include a lowermost surface at a third depth less than the first depth and a third material different from the first and the second materials.