Abstract: A includes an element isolation region, a first active region bounded by the element isolation region and that extends in a first direction and includes first and second parts disposed at a first level, and a third part disposed at a second level located above the first level, and a gate electrode disposed inside each of the element isolation region and the first active region and that extends in a second direction different from the first direction. The second part is spaced apart in the first direction from the first part, and the third part contacts each of the first and second parts. A first width in the second direction of the first part is less than a second width in the second direction of the third part.

Abstract: A semiconductor device includes a device isolation layer defining first and second active regions, a buried contact connected to the second active region, and first and second bit line structures disposed on the first and second active regions. Each of the first and second bit line structures comprises a bit line contact part and a bit line pass part. The bit line contact part is electrically connected to the first active region. The bit line pass part is disposed on the device isolation layer. A height of a lowest part of the buried contact is smaller than a height of a lowest part of the bit line pass part. The height of the lowest part of the buried contact is greater than a height of a lowest part of the bit line contact part. A lower end of the bit line pass part is buried in the second active region.

Abstract: Disclosed is a vehicle door checker that includes: an open lever configured to rotate a pawl in an open direction; a handle open lever having a link pin insertion groove; an inner handle lever connected to an inner handle cable and including a first contact end and a second contact end configured to come into contact with the handle open lever while being rotated in the open direction; an inner link lever configured to come into contact with the first contact end when the inner handle lever is rotated in the open direction; an inner lock lever configured to share a rotation axis with the inner link lever; an elastic member fastened between the inner link lever and the inner lock lever; and a link including a link pin interlocked with rotation of the inner lock lever in an unlocking direction.

Abstract: A semiconductor device includes a device isolation layer defining first and second active regions, a buried contact connected to the second active region, and first and second bit line structures disposed on the first and second active regions. Each of the first and second bit line structures comprises a bit line contact part and a bit line pass part. The bit line contact part is electrically connected to the first active region. The bit line pass part is disposed on the device isolation layer. A height of a lowest part of the buried contact is smaller than a height of a lowest part of the bit line pass part. The height of the lowest part of the buried contact is greater than a height of a lowest part of the bit line contact part. A lower end of the bit line pass part is buried in the second active region.

Abstract: A semiconductor device includes a device isolation layer defining first and second active regions, a buried contact connected to the second active region, and first and second bit line structures disposed on the first and second active regions. Each of the first and second bit line structures comprises a bit line contact part and a bit line pass part. The bit line contact part is electrically connected to the first active region. The bit line pass part is disposed on the device isolation layer. A height of a lowest part of the buried contact is smaller than a height of a lowest part of the bit line pass part. The height of the lowest part of the buried contact is greater than a height of a lowest part of the bit line contact part. A lower end of the bit line pass part is buried in the second active region.

Abstract: A includes an element isolation region, a first active region bounded by the element isolation region and that extends in a first direction and includes first and second parts disposed at a first level, and a third part disposed at a second level located above the first level, and a gate electrode disposed inside each of the element isolation region and the first active region and that extends in a second direction different from the first direction. The second part is spaced apart in the first direction from the first part, and the third part contacts each of the first and second parts. A first width in the second direction of the first part is less than a second width in the second direction of the third part.

Abstract: A semiconductor device includes a device isolation layer defining first and second active regions, a buried contact connected to the second active region, and first and second bit line structures disposed on the first and second active regions. Each of the first and second bit line structures comprises a bit line contact part and a bit line pass part. The bit line contact part is electrically connected to the first active region. The bit line pass part is disposed on the device isolation layer. A height of a lowest part of the buried contact is smaller than a height of a lowest part of the bit line pass part. The height of the lowest part of the buried contact is greater than a height of a lowest part of the bit line contact part. A lower end of the bit line pass part is buried in the second active region.

Abstract: A semiconductor device includes a substrate having a trench, a bit line in the trench, a first spacer extending along the trench and at least a portion of a side surface of the bit line and in contact with the bit line, and a second spacer disposed within the trench on the first spacer. The bit line is narrower than the trench, and the first spacer includes silicon oxide. A method of forming a semiconductor device includes forming a trench in a substrate, forming a bit line within the first trench of width less than that of the first trench, and forming a first spacer that lines a portion of the trench and includes silicon oxide in contact with at least a portion of a side surface of the bit line, and forming a second spacer over the first spacer in the trench.

Abstract: A method of fabricating a semiconductor device includes preparing a substrate including a cell region and a peripheral region having different active region densities, forming cell trenches for limiting cell active regions in the cell region so that the cell active regions are formed to be spaced apart by a first width in a first direction and by a second width in a second direction, forming peripheral trenches for limiting a peripheral active region in the peripheral region, and forming, in the cell trenches, a first insulating layer continuously extending in the first and second directions and contacting sidewalls of the cell active regions, and having a thickness equal to or greater than half of the first width and less than half of the second width.

Abstract: A semiconductor device includes a substrate including an active region and an element isolation region defining the active region, a gate trench extending into the element isolation region and penetrating the active region, and a gate structure filling the gate trench and including a first conductivity-type semiconductor layer, a conductive layer, and a second conductivity-type semiconductor layer, sequentially stacked from a lower portion of the gate trench.

Abstract: Disclosed is a vehicle door latch.

Abstract: A semiconductor device includes a substrate having a trench, a bit line in the trench, a first spacer extending along the trench and at least a portion of a side surface of the bit line and in contact with the bit line, and a second spacer disposed within the trench on the first spacer. The bit line is narrower than the trench, and the first spacer includes silicon oxide. A method of forming a semiconductor device includes forming a trench in a substrate, forming a bit line within the first trench of width less than that of the first trench, and forming a first spacer that lines a portion of the trench and includes silicon oxide in contact with at least a portion of a side surface of the bit line, and forming a second spacer over the first spacer in the trench.

Abstract: A semiconductor device includes a substrate including an active region and an element isolation region defining the active region, a gate trench extending into the element isolation region and penetrating the active region, and a gate structure filling the gate trench and including a first conductivity-type semiconductor layer, a conductive layer, and a second conductivity-type semiconductor layer, sequentially stacked from a lower portion of the gate trench.

Abstract: The present inventive concept provides, for an optical modulation unit of which the manufacturing is simplified and the performance is improved and a stereoscopic display having the same, an optical modulation unit and a stereoscopic display device comprising the same, the optical modulation unit comprising: a liquid crystal cell having different phase delay amounts of penetrated light in the on and off states; and a phase delay film part arranged on at least one among an optical path of light having passed through the liquid crystal cell and an optical path of light entering into the liquid crystal cell, and comprising a phase delay film having a fixed phase delay amount, wherein when a wavelength of light, which has passed through both the liquid crystal cell and the phase delay film part, is ?, a phase delay amount of the light having passed through both the liquid crystal cell and the phase delay film part is ?/4 when the liquid crystal cell is in the on state and ??/4 when the liquid crystal cell is in t

Abstract: Disclosed is a protection device for a blind string. The protection device includes a bellows tube provided in a tubular structure, allowing the blind string to pass through an inner part thereof, and having a length increased or reduced in a longitudinal direction of the blind string, a first module coupled with a lower end portion of the bellows tube and having an inner part to which an end portion of the blind string is locked, and a second module decoupled from the first module at an upper portion of the first module while the bellows tube is interposed between the first module and the second module, such that the bellows tube is folded. The bellows tube has a difference in the thickness of the skin thereof such that the bellows tube is automatically spread due to elasticity thereof when the second module is moved up from the first module.

Abstract: The present inventive concept provides, for an optical modulation unit of which the manufacturing is simplified and the performance is improved and a stereoscopic display having the same, an optical modulation unit and a stereoscopic display device comprising the same, the optical modulation unit comprising: a liquid crystal cell having different phase delay amounts of penetrated light in the on and off states; and a phase delay film part arranged on at least one among an optical path of light having passed through the liquid crystal cell and an optical path of light entering into the liquid crystal cell, and comprising a phase delay film having a fixed phase delay amount, wherein when a wavelength of light, which has passed through both the liquid crystal cell and the phase delay film part, is ?, a phase delay amount of the light having passed through both the liquid crystal cell and the phase delay film part is ?/4 when the liquid crystal cell is in the on state and ??/4 when the liquid crystal cell is in t

Abstract: Disclosed is a protection device for a blind string. The protection device includes a bellows tube provided in a tubular structure, allowing the blind string to pass through an inner part thereof, and having a length increased or reduced in a longitudinal direction of the blind string, a first module coupled with a lower end portion of the bellows tube and having an inner part to which an end portion of the blind string is locked, and a second module decoupled from the first module at an upper portion of the first module while the bellows tube is interposed between the first module and the second module, such that the bellows tube is folded. The bellows tube has a difference in the thickness of the skin thereof such that the bellows tube is automatically spread due to elasticity thereof when the second module is moved up from the first module.

Abstract: A mobile terminal includes a front housing made of a light-transmitting material and provided with edge parts, at least one of which is rounded or bent to be inclined which causes optical illusions so as to provide visual mystique. A display unit is provided under the front housing. A circuit substrate is provided under the display unit. A rear housing is provided to accommodate the display unit and the circuit substrate together with the front housing. A middle housing is provided between the front housing and the rear housing. The middle housing includes a receipt part to accommodate the display unit, and boundary parts connecting the receipt part and edge parts of the middle housing and disposed under the edge parts of the front housing. The edge part of the middle housing is protruded from the boundary part of the middle housing in a horizontal direction.

Abstract: Disclosed herein is a mobile terminal which causes optical illusions at edge parts of a front housing so as to provide visual mystique.