Abstract: Provided is a multi-core device. The multi-core device includes: a plurality of cores outputting a test response value by receiving a test pattern value; a majority analyzer outputting a value corresponding to a majority of the test response value by analyzing the test response value; and a determination unit determining a core outputting a test response value different from the value corresponding to the majority among the plurality of cores.

Abstract: Provided are a method and device for repairing memory. The method includes: determining spare lines with priority to be used for repair, and searching for a repair solution by using the spare line with priority and failure counters for lines without priority.

Abstract: A method of manufacturing a semiconductor device includes forming a first plurality of recessed regions in a substrate, the substrate having a protruded active region between the first plurality of recessed regions and the protruded active region having an upper surface and a sidewall, forming a device isolation film in the first plurality of recessed regions, the device isolation film exposing the upper surface and an upper portion of the sidewall of the protruded active region, and performing a first plasma treatment on the exposed surface of the protruded active region, wherein the plasma treatment is performed using a plasma gas containing at least one of an inert gas and a hydrogen gas in a temperature of less than or equal to about 700° C.

Abstract: A method of manufacturing a semiconductor device includes forming a first plurality of recessed regions in a substrate, the substrate having a protruded active region between the first plurality of recessed regions and the protruded active region having an upper surface and a sidewall, forming a device isolation film in the first plurality of recessed regions, the device isolation film exposing the upper surface and an upper portion of the sidewall of the protruded active region, and performing a first plasma treatment on the exposed surface of the protruded active region, wherein the plasma treatment is performed using a plasma gas containing at least one of an inert gas and a hydrogen gas in a temperature of less than or equal to about 700.

Abstract: A substrate treating method may be performed by a plasma treating apparatus. The substrate treating method may include: providing a substrate on a platform in a lower portion of an inner space of a process chamber; directing a first process gas upward from a first nozzle formed at an inner wall of the process chamber into an upper portion of the inner space, the first process gas being an inert gas and wherein the first nozzle is an obliquely upward-oriented nozzle structured to direct the first process gas upward; directing a second process gas downward from a second nozzle formed at a inner wall of the process chamber into a lower portion of the inner space, the second process gas being hydrogen gas and wherein the second nozzle is an obliquely downward-oriented nozzle structured to direct the second process gas downward; and applying a microwave to the upper portion of the inner space to excite the first process gas and the second process gas into plasma, and then processing the substrate.

Abstract: A timing controller, a multi embedded timing controller (TED), and a display panel including a multi TED are provided. The timing controller includes: a first interface configured to receive data from a host device; and a second interface configured to communicate with another timing controller for driving the display panel, wherein the second interface is configured to communicate full link training information with the other timing controller.

Abstract: A substrate treating method may be performed by a plasma treating apparatus. The substrate treating method may include: providing a substrate on a platform in a lower portion of an inner space of a process chamber; directing a first process gas upward from a first nozzle formed at an inner wall of the process chamber into an upper portion of the inner space, the first process gas being an inert gas and wherein the first nozzle is an obliquely upward-oriented nozzle structured to direct the first process gas upward; directing a second process gas downward from a second nozzle formed at a inner wall of the process chamber into a lower portion of the inner space, the second process gas being hydrogen gas and wherein the second nozzle is an obliquely downward-oriented nozzle structured to direct the second process gas downward; and applying a microwave to the upper portion of the inner space to excite the first process gas and the second process gas into plasma, and then processing the substrate.

Abstract: A semiconductor device includes a plurality of memory controllers each of which includes a local buffer, a global buffer coupled to the plurality of memory controllers and including areas respectively allocated to the plurality of memory controllers, and a global buffer controller that controls sizes of the allocated areas of the global buffer.

Abstract: A semiconductor device and a method for testing the same are provided. The semiconductor device includes a plurality of semiconductor dies staked, a plurality of through-electrodes disposed between the semiconductor dies, a first calculation unit calculating a first output value from input signals inputted into the through-electrodes by a logical operation, a second calculation unit calculating a second output value from output signals outputted from the through-electrodes by a logical operation, and a comparator comparing the first output value with the second output value.

Abstract: A substrate treating method may be performed by a plasma treating apparatus. The substrate treating method may include: providing a substrate on a platform in a lower portion of an inner space of a process chamber; directing a first process gas upward from a first nozzle formed at an inner wall of the process chamber into an upper portion of the inner space, the first process gas being an inert gas and wherein the first nozzle is an obliquely upward-oriented nozzle structured to direct the first process gas upward; directing a second process gas downward from a second nozzle formed at a inner wall of the process chamber into a lower portion of the inner space, the second process gas being hydrogen gas and wherein the second nozzle is an obliquely downward-oriented nozzle structured to direct the second process gas downward; and applying a microwave to the upper portion of the inner space to excite the first process gas and the second process gas into plasma, and then processing the substrate.

Abstract: Disclosed therein are a heat pump system for a vehicle and a method of controlling the heat pump system, which determines that frosting begins on an exterior heat exchanger and carries out a defrosting control if a difference value between outdoor temperature and refrigerant temperature of an outlet side of the exterior heat exchanger is above a frosting decision temperature in a heat pump mode, thereby increasing frost-prevention and defrosting effects and enhancing heating performance and stability of the system because the system recognizes the beginning of frosting on the exterior heat exchanger at a proper time so as to carry out the defrosting control.

Abstract: The present invention relates to a dual zone type air conditioner for vehicles, which includes two air volume controlling doors mounted on an air inflow port of an air-conditioning case where the cross section of an air passageway is uniform and a flow of air is relatively uniform, a sealing wall mounted between the air volume controlling doors, and a controlling part mounted for selecting a more air volume side as a level of a blower when an air volume set by a driver and an air volume set by a passenger are different from each other and controlling the air volume controlling doors to supply the set air volumes to a driver's seat side and a passenger's seat side.

Abstract: Provided is a method of forming a voltage island for a 3D many-core chip multiprocessor, the method including setting the priority of a voltage zone based on the heat emission characteristic of the voltage zone; and forming a voltage island by using the priority.

Abstract: A heat pump system including a water-cooled type heat exchanger, which is a heat supply means, mounted on a first bypass line bypassing a second indoor heat exchanger to collect waste heat of vehicle electric devices to thereby enhance a heating efficiency of the heat pump system.

Abstract: A heat pump system for a vehicle having a complex valve device including a three-way valve, an on-off valve, expansion means and connection blocks are formed integrally with one another, the three-way valve part being connected to the refrigerant circulation line of an inlet of the exterior heat exchanger such that the refrigerant selectively bypasses the exterior heat exchanger, the on-off valve part being connected to an inlet of the bypass line to open and close the bypass line. Connection blocks connect the three-way valve part and the on-off valve part with the refrigerant circulation line of an outlet of the exterior heat exchanger to communicate with each other. Expansion means are connected to an inlet of the three-way valve part to selectively expand refrigerant discharged from an interior heat exchanger. All functions of the heat pump system are thus conducted through a refrigerant control of the complex valve device.

Abstract: Provided is a method of forming a voltage island for a 3D many-core chip multiprocessor, the method including setting the priority of a voltage zone based on the heat emission characteristic of the voltage zone; and forming a voltage island by using the priority.

Abstract: A method of manufacturing a semiconductor device includes forming a first plurality of recessed regions in a substrate, the substrate having a protruded active region between the first plurality of recessed regions and the protruded active region having an upper surface and a sidewall, forming a device isolation film in the first plurality of recessed regions, the device isolation film exposing the upper surface and an upper portion of the sidewall of the protruded active region, and performing a first plasma treatment on the exposed surface of the protruded active region, wherein the plasma treatment is performed using a plasma gas containing at least one of an inert gas and a hydrogen gas in a temperature of less than or equal to about 700.

Abstract: The present invention relates to a method for mass-producing an antifreeze protein derived from a polar yeast, and more particularly, to a method for mass-producing an antifreeze protein derived from Leucosporidium sp., which is the polar yeast, for synthesizing a recombinant polynucleotide by optimizing and altering a gene, which codes the antifreeze protein derived from the polar yeast, for a yeast expression system, and for expressing same using the yeast expression system.

Abstract: Provided are a method and device for repairing memory. The method includes: determining spare lines with priority to be used for repair, and searching for a repair solution by using the spare line with priority and failure counters for lines without priority.

Abstract: Disclosed therein are a heat pump system for a vehicle and a method of controlling the heat pump system, which variably controls only a compressor if the number of revolutions of the compressor is less than the upper limit of the number of the maximum revolutions of the compressor and operates an electric heater only when the number of revolutions of the compressor reaches the upper limit of the number of the maximum revolutions of the compressor in order to satisfy a target discharge temperature in a heat pump mode, thereby preventing that convergence of an air discharge temperature of the interior of the vehicle is deteriorated or becomes unstable when the compressor and the electric heater are variably controlled at the same time in order to satisfy the target discharge temperature.