Abstract: Disclosure provides a substrate processing method, a thermal processing apparatus, and semiconductor manufacturing equipment that allow wafer thermal processing to be uniformly performed at a preset temperature. The substrate processing method includes determining an output of a heater provided in a heating plate by using a sensor substrate including a plurality of substrate temperature sensors, and performing thermal processing with respect to a substrate in response to the output of the heater. The determining of the output of the heater includes heating the sensor substrate through an initial output of the heater, measuring temperature distribution of the sensor substrate, determining the amount of change of target temperature distribution of the heating plate, and adjusting the output of the heater in response to the amount of change of the target distribution of the temperature heating plate.

Abstract: A battery module manufacturing apparatus is capable of switching between a heating function and a cooling function and a manufacturing method using the same, and more particularly to a battery module manufacturing apparatus including a pressing jig and a base jig located under the pressing jig. The base jig includes a temperature conversion unit capable of switching between a heating function and a cooling function, and a battery module manufacturing method using the same.

Abstract: Disclosed are a thin-film transistor and a method for manufacturing the same. The thin-film transistor includes: a substrate serving as a gate electrode; a gate insulating film formed on the substrate; a metal layer formed on the gate insulating film; a metal oxide layer formed on the metal layer and covering an entirety of a surface of the metal layer; a metal oxide semiconductor layer formed so as to cover an entirety of a surface of the metal oxide layer; and a source/drain electrode formed on the metal oxide semiconductor layer, wherein the thin-film transistor further comprises an oxygen depletion layer disposed in an area of the metal oxide semiconductor layer adjacent to the metal oxide layer, wherein the metal oxide semiconductor layer is obtained by crystallizing an amorphous metal oxide semiconductor layer under heat-treatment.

Abstract: A storage server and a method of driving the storage server are provided. The storage server includes a processor configured to: generate a plurality of flush write commands based on a write command of first data provided from a host, provide a replication command corresponding to the write command to an external storage server, and receive an operation completion signal of the replication command from the external storage server; a memory storing a program of a log file to which the plurality of flush write commands are logged; and a storage device configured to receive a multi-offset write command including one or more flush write commands logged to the log file, and perform a flush operation on the multi-offset write command. The processor is further configured to provide the multi-offset write command to the storage device based on the log file after receiving the operation completion signal.

Abstract: A method of manufacturing a battery module may prevent chain ignition. The method may include preparing a module case having a plurality of receiving portions formed therein, each of the receiving portions having a space of a predetermined size; disposing a respective battery cell among a plurality battery cells in each of the receiving portions; and heating the module case with the battery cells to a predetermined temperature to fix the battery cells in the respective receiving portions of the module case. The module case comprises a lower plate, a plurality of side plates, and a plurality of partition walls configured to form the receiving portions, and each of the partition walls comprises a lower partition wall extending from the lower plate by a predetermined height and an upper partition wall extending from the lower partition wall by a predetermined height.

Abstract: Discussed are a battery module with improved cooling performance and a method of manufacturing the battery module. The battery module may include a plurality of cylindrical battery cells, a module frame configured to electrically connect the plurality of cylindrical battery cells to each other, a heat sink located under the plurality of cylindrical battery cells, and an insulation layer formed on a surface of the heat sink in contact with the heat sink.

Abstract: Provided are a memory controller with improved data reliability, a memory system including the memory controller, and a method of operating the memory controller. The memory controller includes an error correction code (ECC) circuit configured to perform an error detection on a codeword read from a memory device; and a processor configured to set at least one memory chip from among a plurality of memory chips as an indicator chip, monitor an error occurrence in the indicator chip based on a result of the error detection, and output reliability deterioration information indicating that the reliability of the memory device is deteriorated based on a result of the monitoring.

Abstract: A semiconductor package includes a substrate having a first surface and a second surface opposite to the first surface. A semiconductor chip is on the first surface of the substrate. A passive element is on the second surface of the substrate. The substrate includes a first passive element pad and a second passive element pad that are exposed by the second surface. A dam extends downwardly from the second surface. The dam includes a first dam and a second dam. The passive element is disposed between the first dam and the second dam. The passive element includes a first electrode portion electrically connected to the first passive element pad. A second electrode portion is electrically connected to the second passive element pad.

Abstract: A storage server and a method of driving the storage server are provided. The storage server includes a processor configured to: generate a plurality of flush write commands based on a write command of first data provided from a host, provide a replication command corresponding to the write command to an external storage server, and receive an operation completion signal of the replication command from the external storage server; a memory storing a program of a log file to which the plurality of flush write commands are logged; and a storage device configured to receive a multi-offset write command including one or more flush write commands logged to the log file, and perform a flush operation on the multi-offset write command. The processor is further configured to provide the multi-offset write command to the storage device based on the log file after receiving the operation completion signal.

Abstract: A semiconductor package includes a substrate having a first surface and a second surface opposite to the first surface. A semiconductor chip is on the first surface of the substrate. A passive element is on the second surface of the substrate. The substrate includes a first passive element pad and a second passive element pad that are exposed by the second surface. A dam extends downwardly from the second surface. The dam includes a first dam and a second dam. The passive element is disposed between the first dam and the second dam. The passive element includes a first electrode portion electrically connected to the first passive element pad. A second electrode portion is electrically connected to the second passive element pad.

Abstract: A method of controlling a first memory controller that controls a non-volatile memory device includes: the first memory controller receiving first data and a first physical address from a second memory controller via a first interface of the first memory controller; the first memory controller storing the first data in a non-volatile memory buffer of the first memory controller; and the first memory controller programming the first data stored in the non-volatile memory buffer in a first physical region of the non-volatile memory device corresponding to the first physical address.

Abstract: Provided are a memory controller with improved data reliability, a memory system including the memory controller, and a method of operating the memory controller. The memory controller includes an error correction code (ECC) circuit configured to perform an error detection on a codeword read from a memory device; and a processor configured to set at least one memory chip from among a plurality of memory chips as an indicator chip, monitor an error occurrence in the indicator chip based on a result of the error detection, and output reliability deterioration information indicating that the reliability of the memory device is deteriorated based on a result of the monitoring.

Abstract: A memory system includes a memory device, a first controller, and a second controller. The first controller is configured to output a control signal for the memory device and data to be stored in the memory device based on a signal received from a host. The second controller includes a non-volatile memory configured to store the data. The second controller is configured to receive the control signal and the data from the first controller, and control the memory device based on the control signal.

Abstract: Provided are a memory controller with improved data reliability, a memory system including the memory controller, and a method of operating the memory controller. The memory controller includes an error correction code (ECC) circuit configured to perform an error detection on a codeword read from a memory device; and a processor configured to set at least one memory chip from among a plurality of memory chips as an indicator chip, monitor an error occurrence in the indicator chip based on a result of the error detection, and output reliability deterioration information indicating that the reliability of the memory device is deteriorated based on a result of the monitoring.

Abstract: A measurement device includes an emitter configured to emit an electromagnetic signal to an object to be measured. A first detector is disposed to measure a first portion of the electromagnetic signal that is reflected by the object to be measured. A second detector is disposed to measure a second portion of the electromagnetic signal that is transmitted through the object to be measured. The emitter is configured to emit the electromagnetic signal in a direction substantially perpendicular to a surface of the object to be measured.

Abstract: A memory system includes a memory device, a first controller, and a second controller. The first controller is configured to output a control signal for the memory device and data to be stored in the memory device based on a signal received from a host. The second controller includes a non-volatile memory configured to store the data. The second controller is configured to receive the control signal and the data from the first controller, and control the memory device based on the control signal.

Abstract: A method of controlling a first memory controller that controls a non-volatile memory device includes: the first memory controller receiving first data and a first physical address from a second memory controller via a first interface of the first memory controller; the first memory controller storing the first data in a non-volatile memory buffer of the first memory controller; and the first memory controller programming the first data stored in the non-volatile memory buffer in a first physical region of the non-volatile memory device corresponding to the first physical address.

Abstract: Provided are a memory controller with improved data reliability, a memory system including the memory controller, and a method of operating the memory controller. The memory controller includes an error correction code (ECC) circuit configured to perform an error detection on a codeword read from a memory device; and a processor configured to set at least one memory chip from among a plurality of memory chips as an indicator chip, monitor an error occurrence in the indicator chip based on a result of the error detection, and output reliability deterioration information indicating that the reliability of the memory device is deteriorated based on a result of the monitoring.

Abstract: Disclosed are a semiconductor package and a method of fabricating the same. The semiconductor package comprises a lower semiconductor chip on a lower substrate, a lower molding layer covering the lower semiconductor chip on the lower substrate and including a molding cavity that extends toward the lower semiconductor chip from a top surface of the lower molding layer, an interposer substrate on the top surface of the lower molding layer and including a substrate opening that penetrates the interposer substrate and overlaps the molding cavity, and an upper package on the interposer substrate. The molding cavity has a floor surface spaced apart from the upper package across a substantially hollow space.

Abstract: Provided are an X-ray detecting apparatus which is capable of controlling an electric power supplied to an X-ray detector module while an X-ray tomography scanning is being performed, and a method for operating the X-ray detecting apparatus. The X-ray detecting apparatus includes an X-ray detector module which has a heat dissipation structure.