Abstract: A semiconductor structure is provided, which includes multiple sections arranged along a longitudinal axis. Preferably, the semiconductor structure comprises a middle section and two terminal sections located at opposite ends of the middle section. A semiconductor core having a first dopant concentration preferably extends along the longitudinal axis through the middle section and the two terminal sections. A semiconductor shell having a second, higher dopant concentration preferably encircles a portion of the semiconductor core at the two terminal sections, but not at the middle section, of the semiconductor structure. It is particularly preferred that the semiconductor structure is a nanostructure having a cross-sectional dimension of not more than 100 nm.

Abstract: A semiconductor structure is provided, which includes multiple sections arranged along a longitudinal axis. Preferably, the semiconductor structure comprises a middle section and two terminal sections located at opposite ends of the middle section. A semiconductor core having a first dopant concentration preferably extends along the longitudinal axis through the middle section and the two terminal sections. A semiconductor shell having a second, higher dopant concentration preferably encircles a portion of the semiconductor core at the two terminal sections, but not at the middle section, of the semiconductor structure. It is particularly preferred that the semiconductor structure is a nanostructure having a cross-sectional dimension of not more than 100 nm.

Abstract: Embodiments relate to a solar cell apparatus including a molybdenum (Mo) contact layer and an annealed absorber layer including zinc and sulfur directly adjacent to the Mo contact layer. The apparatus has no molybdenum disulfide (MoS2) layer located between the Mo contact layer and the annealed absorber layer. The apparatus further includes a buffer layer adjacent to the annealed absorber layer.

Abstract: In one aspect, an interposer assembly for housing a photovoltaic device includes a frame, formed from an electrically insulating material, having a center opening with a shape/size complementary to a shape/size of the photovoltaic device thus permitting the photovoltaic device to fit within the center opening in the frame when the photovoltaic device is housed in the assembly; a beam shield on the frame having a cup-shaped inner cavity to aid in routing of light to the photovoltaic device, wherein a side of the beam shield facing the frame has one or more recesses present therein; and one or more interposer connectors positioned between the frame and the beam shield such that the interposer connectors fit within the recesses in the beam shield, and wherein a portion of each of the interposer connectors extends into the center opening of the frame.

Abstract: Techniques for providing high-capacity, re-workable connections in concentrated photovoltaic devices are provided. In one aspect, a lead frame package for a photovoltaic device is provided that includes a beam shield; and one or more lead frame connectors affixed to the beam shield, wherein the lead frame connectors are configured to provide connection to the photovoltaic device when the photovoltaic device is assembled to the lead frame package. A photovoltaic apparatus is also provided that includes a lead frame package assembled to a photovoltaic device. The lead frame package includes a beam shield and one or more lead frame connectors affixed to the beam shield, wherein the lead frame connectors are configured to provide connection to the photovoltaic device.

Abstract: Electrical contact to the front side of a photovoltaic cell is provided by an array of conductive through-substrate vias, and optionally, an array of conductive blocks located on the front side of the photovoltaic cell. A dielectric liner provides electrical isolation of each conductive through-substrate via from the semiconductor material of the photovoltaic cell. A dielectric layer on the backside of the photovoltaic cell is patterned to cover a contiguous region including all of the conductive through-substrate vias, while exposing a portion of the backside of the photovoltaic cell. A conductive material layer is deposited on the back surface of the photovoltaic cell, and is patterned to form a first conductive wiring structure that electrically connects the conductive through-substrate vias and a second conductive wiring structure that provides electrical connection to the backside of the photovoltaic cell.

Abstract: In one embodiment, the invention is a method and apparatus for flatband voltage tuning of high-k field effect transistors. One embodiment of a field effect transistor includes a substrate, a high-k dielectric layer deposited on the substrate, a gate electrode deposited on the high-k dielectric layer, and a dipole layer positioned between the substrate and the gate electrode, for shifting the threshold voltage of the field effect transistor.

Abstract: Photovoltaic devices and techniques for enhancing efficiency thereof are provided. In one aspect, a photovoltaic device is provided. The photovoltaic device comprises a photocell having a first photoactive layer and a second photoactive layer adjacent to the first photoactive layer so as to form a heterojunction between the first photoactive layer and the second photoactive layer; and a plurality of high-aspect-ratio nanostructures on one or more surfaces of the second photoactive layer. The plurality of high-aspect-ratio nanostructures are configured to act as a scattering media for incident light. The plurality of high-aspect-ratio nanostructures can also be configured to create an optical resonance effect in the incident light.

Abstract: Embodiments relate to a solar cell apparatus including a molybdenum (Mo) contact layer and an annealed absorber layer including zinc and sulfur directly adjacent to the Mo contact layer. The apparatus has no molybdenum disulfide (MoS2) layer located between the Mo contact layer and the annealed absorber layer. The apparatus further includes a buffer layer adjacent to the annealed absorber layer.

Abstract: Embodiments relate to a method including forming a layer of copper zinc tin sulfide (CZTS) on a first layer of molybdenum (Mo) and annealing the CZTS layer and the first Mo layer to form a layer of molybdenum disulfide (MoS2) between the layer of CZTS and the first layer of Mo. The method includes forming a back contact on a first surface of the CZTS layer opposite the first Mo layer and separating the first Mo layer and the MoS2 layer from the CZTS layer to expose a second surface of the CZTS layer opposite the first surface. The method further includes forming a buffer layer on the second surface of the CZTS layer.

Abstract: A semiconductor structure is provided, which includes multiple sections arranged along a longitudinal axis. Preferably, the semiconductor structure comprises a middle section and two terminal sections located at opposite ends of the middle section. A semiconductor core having a first dopant concentration preferably extends along the longitudinal axis through the middle section and the two terminal sections. A semiconductor shell having a second, higher dopant concentration preferably encircles a portion of the semiconductor core at the two terminal sections, but not at the middle section, of the semiconductor structure. It is particularly preferred that the semiconductor structure is a nanostructure having a cross-sectional dimension of not more than 100 nm.

Abstract: Photovoltaic devices and techniques for enhancing efficiency thereof are provided. In one aspect, a photovoltaic device is provided. The photovoltaic device comprises a photocell having a photoactive layer and a non-photoactive layer adjacent to the photoactive layer so as to form a heterojunction between the photoactive layer and the non-photoactive layer; and a plurality of high-aspect-ratio nanostructures on one or more surfaces of the photoactive layer. The plurality of high-aspect-ratio nanostructures are configured to act as a scattering media for incident light. The plurality of high-aspect-ratio nanostructures can also be configured to create an optical resonance effect in the incident light.

Abstract: In an annealing process, a Kesterite film is provided on a substrate. The Kesterite film and the substrate are generally planar, have an interface, and have a substrate exterior side and a Kesterite exterior side. An additional step includes locating the cap adjacent the Kesterite exterior side. A further step includes applying sufficient heat to the Kesterite film and the substrate for a sufficient time to anneal the Kesterite film. The annealing is carried out with the cap adjacent the Kesterite exterior side. In another aspect, the film is not limited to Kesterite, and the cap is employed without any precursor layer thereon. Solar cell manufacturing techniques employing the annealing techniques are also disclosed.

Abstract: A semiconductor device includes a bonding surface, a semiconducting nanostructure including one of a nanowire and a nanocrystal, which is formed on the bonding surface, and a source electrode and a drain electrode which are formed on the nanostructure such that the nanostructure is electrically connected to the source and drain electrodes.

Abstract: Photovoltaic devices and techniques for enhancing efficiency thereof are provided. In one aspect, a photovoltaic device is provided. The photovoltaic device comprises a photocell having a first photoactive layer and a second photoactive layer adjacent to the first photoactive layer so as to form a heterojunction between the first photoactive layer and the second photoactive layer; and a plurality of high-aspect-ratio nanostructures on one or more surfaces of the second photoactive layer. The plurality of high-aspect-ratio nanostructures are configured to act as a scattering media for incident light. The plurality of high-aspect-ratio nanostructures can also be configured to create an optical resonance effect in the incident light.

Abstract: A method of concentrating solar energy includes receiving solar energy through a surface of an optically clear shell, guiding the solar energy through a liquid contained in the optically clear shell, folding the solar energy back through the liquid toward a solar receiver, and shifting the solar receiver within the optically clear shell to track the sun, wherein the solar energy collected by the solar receiver is converted into electrical energy.

Abstract: Photovoltaic devices and techniques for enhancing efficiency thereof are provided. In one aspect, a photovoltaic device is provided. The photovoltaic device comprises a photocell having a photoactive layer and a non-photoactive layer adjacent to the photoactive layer so as to form a heterojunction between the photoactive layer and the non-photoactive layer; and a plurality of high-aspect-ratio nanostructures on one or more surfaces of the photoactive layer. The plurality of high-aspect-ratio nanostructures are configured to act as a scattering media for incident light. The plurality of high-aspect-ratio nanostructures can also be configured to create an optical resonance effect in the incident light.

Abstract: A field effect transistor (FET) includes a body region and a source region disposed at least partially in the body region. The FET also includes a drain region disposed at least partially in the body region and a molybdenum oxynitride (MoNO) gate. The FET also includes a dielectric having a high dielectric constant (k) disposed between the body region and the MoNO gate.

Abstract: A transportable photovoltaic system includes a plurality of photovoltaic devices, a composite frame to which the plurality of photovoltaic devices are affixed, and a base structure to which the composite frame is movably attached through at least one variable-angle mount structure. The orientation of the frame and the light concentrating elements relative to the base structure can be altered employing the at least one variable-angle mount structure. The frame and the plurality of photovoltaic devices can be assembled prior to shipping, and the base structure can be manufactured on site. The transportable photovoltaic system is not affixed to ground or other fixture, but can be picked up at any time during the operational lifetime. The transportable photovoltaic system can be rapidly deployed with little or no site preparation requirement other than generally level ground, and can be retracted to a lower exposure position to avoid storm and/or hazardous conditions.

Abstract: A transportable photovoltaic system includes a plurality of photovoltaic devices, a composite frame to which the plurality of photovoltaic devices are affixed, and a base structure to which the composite frame is movably attached through at least one variable-angle mount structure. The orientation of the frame and the light concentrating elements relative to the base structure can be altered employing the at least one variable-angle mount structure. The frame and the plurality of photovoltaic devices can be assembled prior to shipping, and the base structure can be manufactured on site. The transportable photovoltaic system is not affixed to ground or other fixture, but can be picked up at any time during the operational lifetime. The transportable photovoltaic system can be rapidly deployed with little or no site preparation requirement other than generally level ground, and can be retracted to a lower exposure position to avoid storm and/or hazardous conditions.