Patents by Inventor Susmit Singha Roy

Susmit Singha Roy has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20210090952
    Abstract: Apparatuses and methods to provide a fully self-aligned via are described. A first metallization layer comprises a set of first conductive lines extending along a first direction on a first insulating layer on a substrate, the set of first conductive lines recessed below a top portion of the first insulating layer. A capping layer is on the first insulating layer, and a second insulating layer is on the capping layer. A second metallization layer comprises a set of second conductive lines on the second insulating layer and on a third insulating layer above the first metallization layer. The set of second conductive lines extend along a second direction that crosses the first direction at an angle. At least one via is between the first metallization layer and the second metallization layer. The via is self-aligned along the second direction to one of the first conductive lines. The tapering angle of the via opening may be in a range of from about 60° to about 120°.
    Type: Application
    Filed: September 14, 2020
    Publication date: March 25, 2021
    Applicant: Micromaterials LLC
    Inventors: Regina Freed, Madhur Sachan, Susmit Singha Roy, Gabriela Alva, Ho-yung David Hwang, Uday Mitra, El Mehdi Bazizi, Angada Bangalore Sachid, He Ren, Sushant Mittal
  • Patent number: 10950498
    Abstract: Methods of dep-etch in semiconductor devices (e.g. V-NAND) are described. A metal layer is deposited in a feature. The metal layer is removed by low temperature atomic layer etching by oxidizing the surface of the metal layer and etching the oxide in a layer-by-layer fashion. After removal of the metal layer, the features are filled with a metal.
    Type: Grant
    Filed: September 26, 2019
    Date of Patent: March 16, 2021
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Susmit Singha Roy, Srinivas Gandikota, Pramit Manna, Abhijit Basu Mallick
  • Patent number: 10930493
    Abstract: Embodiments described herein generally relate to methods of depositing thin films and, more particularly, to depositing metal thin films. The methods herein provide a nucleation free conversion (NFC) approach which involves forming an amorphous silicon layer over the dielectric layer, and performing an NFC process which acts to convert the amorphous silicon layer into a thin metal film. In some embodiments, the NFC process is performed multiple times until the resulting thin metal film is continuous. A bulk metal is formed over the thin metal film.
    Type: Grant
    Filed: October 8, 2019
    Date of Patent: February 23, 2021
    Assignee: Applied Materials, Inc.
    Inventors: Susmit Singha Roy, Yong Wu, Srinivas Gandikota
  • Publication number: 20210050365
    Abstract: Methods of forming memory structures are described. A metal film is deposited in the features of a structured substrate and volumetrically expanded to form pillars. A blanket film is deposited to a height less than the height of the pillars and the blanket film is removed from the top of the pillars. The height of the pillars is reduced so that the top of the pillars are below the surface of the blanket film and the process is optionally repeated to form a structure of predetermined height. The pillars can be removed from the features after formation of the predetermined height structure to form high aspect ratio features.
    Type: Application
    Filed: August 28, 2018
    Publication date: February 18, 2021
    Inventors: Praburam Gopalraja, Susmit Singha Roy, Abhijit Basu Mallick, Srinivas Gandikota
  • Publication number: 20210047728
    Abstract: Methods of producing a self-aligned structure are described. The methods comprise forming a metal sub-oxide film in a substrate feature and oxidizing the sub-oxide film to form a self-aligned structure comprising metal oxide. In some embodiments, a metal film is deposited and then treated to form the metal sub-oxide film. In some embodiments, the process of depositing and treating the metal film to form the metal sub-oxide film is repeated until a predetermined depth of metal sub-oxide film is formed within the substrate feature.
    Type: Application
    Filed: August 28, 2018
    Publication date: February 18, 2021
    Inventors: Srinivas Gandikota, Susmit Singha Roy, Abhijit Basu Mallick
  • Publication number: 20200411373
    Abstract: Methods of forming semiconductor device with fluorine-incorporated metal nitride films are described. A substrate surface is exposed to a metal fluoride precursor to form a metal-fluorine species on the substrate surface. The substrate surface is exposed to a nitriding agent to react with the metal-fluorine species to form a fluorine-incorporated metal nitride film.
    Type: Application
    Filed: June 28, 2020
    Publication date: December 31, 2020
    Applicant: Applied Materials, Inc.
    Inventors: Yixiong Yang, Srinivas Gandikota, Steven C.H. Hung, Jacqueline S. Wrench, Yongjing Lin, Susmit Singha Roy, Wei V. Tang, Shih Chung Chen
  • Publication number: 20200373200
    Abstract: A method of forming an electronic device is disclosed. The method comprises forming depositing a metal on a substrate, the metal comprising one or more of copper (Cu), titanium (Ti), or tantalum (Ta). A metal cap is deposited on the metal, the metal cap comprising one or more of molybdenum (Mo), ruthenium (Ru), iridium (Ir), rhodium (Rh), palladium (Pd), silver (Ag), osmium (Os), platinum (Pt), or gold (Au). The substrate is then exposed to a hydrogen high-pressure anneal. The formation of the metal cap on the metal minimizes parasitic adsorption of hydrogen by the underlying metal.
    Type: Application
    Filed: May 18, 2020
    Publication date: November 26, 2020
    Applicant: Applied Materials, Inc.
    Inventors: Srinivas Gandikota, Steven C.H. Hung, Srinivas D. Nemani, Yixiong Yang, Susmit Singha Roy, Nikolaos Bekiaris
  • Publication number: 20200373310
    Abstract: Methods and apparatus for forming a plurality of nonvolatile memory cells are provided herein. In some embodiments, the method, for example, includes forming a plurality of nonvolatile memory cells, comprising forming, on a substrate, a stack of alternating layers of metal including a first layer of metal and a second layer of metal different from the first layer of metal; removing the first layer of metal to form spaces between the alternating layers of the second layer of metal; and one of depositing a first layer of material to partially fill the spaces to leave air gaps therein or depositing a second layer of material to fill the spaces.
    Type: Application
    Filed: July 22, 2019
    Publication date: November 26, 2020
    Inventors: Takehito Koshizawa, Mukund Srinivasan, Tomohiko Kitajima, Chang Seok Kang, Sung-Kwan Kang, Gill Y. Lee, Susmit Singha Roy
  • Patent number: 10840186
    Abstract: A first metallization layer comprises a set of first conductive lines that extend along a first direction on a first dielectric layer on a substrate. Pillars are formed on recessed first dielectric layers and a second dielectric layer covers the pillars. A dual damascene etch provides a contact hole through the second dielectric layer and an etch removes the pillars to form air gaps.
    Type: Grant
    Filed: July 25, 2019
    Date of Patent: November 17, 2020
    Assignee: Applied Materials, Inc.
    Inventors: Susmit Singha Roy, Ziqing Duan, Abhijit Basu Mallick, Praburam Gopalraja
  • Publication number: 20200279772
    Abstract: Methods of producing a self-aligned structure are described. The methods comprise forming a metal-containing film in a substrate feature and silicidizing the metal-containing film to form a self-aligned structure comprising metal silicide. In some embodiments, the rate of formation of the self-aligned structure is controlled. In some embodiments, the amount of volumetric expansion of the metal-containing film to form the self-aligned structure is controlled. Methods of forming self-aligned vias are also described.
    Type: Application
    Filed: September 14, 2018
    Publication date: September 3, 2020
    Inventors: Susmit Singha Roy, Srinivas Gandikota, Abhijit Basu Mallick, Amrita B. Mullick
  • Publication number: 20200279773
    Abstract: Methods of forming and processing semiconductor devices which utilize a three-color process are described. Certain embodiments relate to the formation of self-aligned contacts for metal gate applications. More particularly, certain embodiments relate to the formation of self-aligned gate contacts utilizing the formation of self-aligned growth pillars. The pillars lead to taller gate heights and increased margins against shorting defects.
    Type: Application
    Filed: February 24, 2020
    Publication date: September 3, 2020
    Applicant: Micromaterials LLC
    Inventors: Yuriy Shusterman, Madhur Sachan, Susmit Singha Roy, Regina Freed, Sanjay Natarajan
  • Patent number: 10741435
    Abstract: Methods comprising forming a film on at least one feature of a substrate surface are described. The film is expanded to fill the at least one feature and cause growth of the film from the at least one feature. Methods of forming self-aligned vias are also described.
    Type: Grant
    Filed: April 24, 2019
    Date of Patent: August 11, 2020
    Assignee: Applied Materials, Inc.
    Inventors: Susmit Singha Roy, Yihong Chen, Kelvin Chan, Abhijit Basu Mallick, Srinivas Gandikota, Pramit Manna
  • Publication number: 20200227275
    Abstract: Processing methods to etch metal oxide films with less etch residue are described. The methods comprise etching a metal oxide film with a metal halide etchant, and exposing the etch residue to a reductant to remove the etch residue. Some embodiments relate to etching tungsten oxide films. Some embodiments utilize tungsten halides to etch metal oxide films. Some embodiments utilize hydrogen gas as a reductant to remove etch residues.
    Type: Application
    Filed: March 26, 2020
    Publication date: July 16, 2020
    Applicant: Applied Materials, Inc.
    Inventors: Amrita B. Mullick, Abhijit Basu Mallick, Srinivas Gandikota, Susmit Singha Roy, Yingli Rao, Regina Freed, Uday Mitra
  • Publication number: 20200194307
    Abstract: In one embodiment, a method of forming a barrier layer is provided. The method includes positioning a substrate in a processing chamber, forming a barrier layer over the substrate and in contact with the underlayer, and annealing the substrate. The substrate comprises at least one underlayer having cobalt, tungsten, or copper. The barrier layer has a thickness of less than 70 angstroms.
    Type: Application
    Filed: February 27, 2020
    Publication date: June 18, 2020
    Inventors: Susmit Singha ROY, Yihong CHEN, Abhijit Basu MALLICK, Srinivas GANDIKOTA
  • Publication number: 20200194304
    Abstract: Processing methods to form self-aligned high aspect ratio features are described. The methods comprise depositing a metal film on a structured substrate, volumetrically expanding the metal film, depositing a second film between the expanded pillars and optionally recessing the pillars and repeating the process to form the high aspect ratio features.
    Type: Application
    Filed: August 6, 2018
    Publication date: June 18, 2020
    Inventors: Susmit Singha Roy, Praburam Gopalraja, Abhijit Basu Mallick, Srinivas Gandikota
  • Publication number: 20200168503
    Abstract: Methods of depositing a carbon film are discussed. Some embodiments selectively deposit a carbon film on a metal surface over a dielectric surface. Some embodiments form carbon pillars on metal surfaces selectively over dielectric surfaces. Some embodiments utilize carbon pillars in forming self-aligned vias.
    Type: Application
    Filed: November 21, 2019
    Publication date: May 28, 2020
    Applicant: Applied Materials, Inc.
    Inventors: Susmit Singha Roy, Abhijit Basu Mallick
  • Publication number: 20200135456
    Abstract: Embodiments described herein generally relate to methods of depositing thin films and, more particularly, to depositing metal thin films. The methods herein provide a nucleation free conversion (NFC) approach which involves forming an amorphous silicon layer over the dielectric layer, and performing an NFC process which acts to convert the amorphous silicon layer into a thin metal film. In some embodiments, the NFC process is performed multiple times until the resulting thin metal film is continuous. A bulk metal is formed over the thin metal film.
    Type: Application
    Filed: October 8, 2019
    Publication date: April 30, 2020
    Inventors: Susmit Singha ROY, Yong WU, Srinivas GANDIKOTA
  • Patent number: 10622221
    Abstract: Processing methods to etch metal oxide films with less etch residue are described. The methods comprise etching a metal oxide film with a metal halide etchant, and exposing the etch residue to a reductant to remove the etch residue. Some embodiments relate to etching tungsten oxide films. Some embodiments utilize tungsten halides to etch metal oxide films. Some embodiments utilize hydrogen gas as a reductant to remove etch residues.
    Type: Grant
    Filed: December 13, 2018
    Date of Patent: April 14, 2020
    Assignee: Applied Materials, Inc.
    Inventors: Amrita B. Mullick, Abhijit Basu Mallick, Srinivas Gandikota, Susmit Singha Roy, Yingli Rao, Regina Freed, Uday Mitra
  • Patent number: 10600684
    Abstract: In one embodiment, a method of forming a barrier layer is provided. The method includes positioning a substrate in a processing chamber, forming a barrier layer over the substrate and in contact with the underlayer, and annealing the substrate. The substrate comprises at least one underlayer having cobalt, tungsten, or copper. The barrier layer has a thickness of less than 70 angstroms.
    Type: Grant
    Filed: December 18, 2018
    Date of Patent: March 24, 2020
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Susmit Singha Roy, Yihong Chen, Abhijit Basu Mallick, Srinivas Gandikota
  • Publication number: 20200083056
    Abstract: Embodiments described herein relate to methods and materials for fabricating semiconductor device structures. In one example, a metal film stack includes a plurality of metal containing films and a plurality of metal derived films arranged in an alternating manner. In another example, a metal film stack includes a plurality of metal containing films which are modified into metal derived films. In certain embodiments, the metal film stacks are used in oxide/metal/oxide/metal (OMOM) structures for memory devices.
    Type: Application
    Filed: November 13, 2019
    Publication date: March 12, 2020
    Inventors: Susmit Singha ROY, Yingli RAO, Srinivas GANDIKOTA