Abstract: A method of measuring a breakdown voltage of a semiconductor element includes the steps below. A wafer provided with a plurality of semiconductor elements each having an electrode is prepared. The wafer is divided into a plurality of chips provided with at least one semiconductor element. After the step of division into the plurality of chips, a breakdown voltage of the semiconductor element is measured while a probe is in contact with the electrode of the semiconductor element in an insulating liquid.

Abstract: A solder-containing semiconductor device includes a semiconductor device. The semiconductor device includes a substrate, at least one group III nitride semiconductor layer disposed on the substrate, a Schottky electrode disposed on the group III nitride semiconductor layer, and a pad electrode disposed on the Schottky electrode. The pad electrode has a multi-layer structure including at least a Pt layer. The solder-containing semiconductor device further includes a solder having a melting point of 200 to 230° C. and being disposed on the pad electrode of the semiconductor device. Thereby, the solder-containing semiconductor device including the Schottky electrode, the pad electrode disposed on the Schottky electrode and the solder disposed on the pad electrode can be mounted to offer a mounted solder-containing semiconductor device without degrading the semiconductor device properties.

Abstract: A semiconductor laser device includes: a substrate having a principal plane; a photonic crystal layer having an epitaxial layer of gallium nitride formed on substrate in a direction in which principal plane extends and a low refractive index material having a refractive index lower than that of epitaxial layer; an n-type clad layer formed on substrate; a p-type clad layer formed on substrate; an active layer that is interposed between n-type clad layer and p-type clad layer and emits light when a carrier is injected thereinto; and a GaN layer that covers a region directly on photonic crystal layer. Thus, the semiconductor laser device can be manufactured without fusion.

Abstract: There is provided a voltage controlled oscillator that is compact and can be manufactured at low cost. The voltage controlled oscillator is structured to include: a resonance part including a variable capacitance element and an inductance element, the variable capacitance element having a capacitance that varies according to a control voltage for frequency control input from an external part, and a series resonant frequency of the resonance part being adjusted according to the capacitance; an amplifying part amplifying a frequency signal from the resonance part; and a feedback part including a capacitance element for feedback and feeding the frequency signal amplified by the amplifying part back to the resonance part to form an oscillation loop together with the amplifying part and the resonance part, wherein the amplifying part is provided in an integrated circuit chip, and the resonance part and the capacitance element for feedback are formed as circuit components separate from the integrated circuit chip.

Abstract: A group III nitride semiconductor light emitting device with a satisfactory ohmic contact is provided. The group III nitride semiconductor light emitting device includes a junction JC which tilts with respect to the reference plane that is orthogonal to a c-axis of a gallium nitride based semiconductor layer. An electrode forms the junction with the semipolar surface of the gallium nitride based semiconductor layer. The oxygen concentration of the grown gallium nitride based semiconductor layer that will form the junction JC is reduced. Since the electrode is in contact with the semipolar surface of the gallium nitride based semiconductor layer so as to form the junction, the metal-semiconductor junction has satisfactory ohmic characteristics.

Abstract: To provide a receiving side filter of a duplexer and a duplexer capable of preventing a leakage of an electric field and a magnetic field to the outside. In a receiving side filter having a longitudinal mode resonator type filter including cross finger electrodes and reflectors respectively formed on a piezoelectric substrate and an unbalanced input signal path and balanced output ports respectively provided on an input side and on an output side of the longitudinal mode resonator type filter, and used on a receiving side of a duplexer, a shield electrode connected to a ground electrode side of the cross finger electrode is disposed to surround a periphery of the receiving side filter so that an electric field and a magnetic field leaked to the outside from the receiving side filter are short-circuited by the shield electrode.

Abstract: To provide a voltage controlled oscillator having small size and capable of obtaining a low phase noise characteristic over a large span of adjustable range of frequency. A quartz crystal having a characteristic (dielectric loss tangent: tan ?) better than that of fluorocarbon resin, LTCC or the like conventionally used as a substrate of a resonance part, and on which a fine pattern of metal film can be formed through a photolithography method, is used as a quartz-crystal substrate, and a conductive line is formed on the quartz-crystal substrate to form an inductance element in the resonance part. Accordingly, since the resonance part having a high Q value can be formed, it is possible to obtain a voltage controlled oscillator having small size and low loss over a wide frequency range.

Abstract: Disclosed is a miniaturized duplexer having a good isolation characteristic. A duplexer having a high band side filter and a low band side filter that are each formed in a ladder-type filter provided on a common piezoelectric substrate is provided with a first elastic wave resonator to be included in one of these filters, a second elastic wave resonator to be included in the other of the filters, and a first additional grating reflector provided between these resonators to reflect an elastic wave leaked from a grating reflector of the first elastic wave resonator, and in which an additional grating reflector is not provided on a side opposite to the second elastic wave resonator in the first elastic wave resonator.

Abstract: A duplexer formed on a piezoelectric substrate includes a low band side filter and a high band side filter, and has an improved isolation characteristic in a pass frequency band of the high band side filter. Transmission and reception of signals are respectively performed from either of the low band side filter and the high band side filter and the other filter with respect to an input/output port. Series arms and parallel arms each formed of an elastic wave resonator form the low band side filter. A shield electrode is disposed close to either of the input/output port and a low band side filter port, and is grounded for capacitive coupling with same.

Abstract: There is provided an elastic wave device that is capable of suppressing deterioration in flatness of a frequency characteristic in a pass frequency band yet has excellent ESD resistance. At positions apart from a crossing area of electrode fingers 12, 12 toward a bulbar 11, first float dummy electrodes 16, 16 and a second float dummy electrode 18 are provided between adjacent IDT electrodes 1, 1 and between the IDT electrode 1 and a grating reflector 2 which are adjacent to each other. These float dummy electrodes 16, 18 are in a state of electrically floating from other regions, and these float dummy electrodes 16, 18 are formed so as to correspond to an arrangement pattern of the electrode fingers 12 in the IDT electrode 1.

Abstract: Disclosed is a receiving side filter in a pass band of a duplexer's transmitting side filter. Output balancing is performed by the receiving side filter, which includes a longitudinal mode resonator type filter. A pass band of the receiving side filter is set on a lower band side than the pass band of the transmitting side filter. Between an antenna port and a pair of balanced reception ports, first and second ladder-type filters are provided. The first includes a series arm and a parallel arm, each formed of a SAW resonator and a longitudinal mode resonator type filter. The second ladder-type filter has series arms, formed of SAW resonators respectively provided in signal paths that connect the respective balanced reception ports and the longitudinal mode resonator type filter, and a parallel arm formed of a SAW resonator and connecting between these signal paths.

Abstract: To provide a duplexer which is small in size and excellent in separation characteristic of transmission/reception signals.

Abstract: Wafer guide for MOCVD equipment that reduces influence from III-nitride deposits. A wafer support (15) includes one or more first sections (15a), and a second section (15b) surrounding the first sections (15a). Each first section (15a) includes a surface for supporting wafers (19) on which nitride semiconductor is deposited. In MOCVD tools (11) and (13), a wafer guide (17) is provided on the wafer-support (15) second section (15b). The wafer guide (17) is furnished with a protector (17a) for covering the second section (15b), and one or more openings (17b) for receiving the wafers (19) on the first sections (15a). The protector (17a) has lateral surfaces (17c) defining the openings (17b) and guiding the wafers (19), and receives a wafer (19) in each opening (17b). A wafer (19) is loaded onto the support surface of each wafer-support (15) first section (15a) exposed in that opening (17b).

Abstract: There is provided a method of fabricating a semiconductor laser including a two-dimensional photonic crystal. The method comprises the steps of growing an InX1Ga1?X1N (0<X1<1) layer on a gallium nitride-based semiconductor region in a reactor; after taking out a substrate product including the InX1Ga1?X1N layer from the reactor, forming a plurality of openings for a two-dimensional diffraction grating of the two-dimensional photonic crystal in the InX1Ga1?X1N layer to form a patterned InX1Ga1?X1N layer; and growing an AlX2Ga1?X2N (0?X2?1) layer on a top surface of the patterned InX1Ga1?X1N layer to form voids associated with the openings.

Abstract: To provide a voltage controlled oscillator having small size and capable of obtaining a low phase noise characteristic over a large span of adjustable range of frequency. A quartz crystal having a characteristic (dielectric loss tangent: tan ?) better than that of fluorocarbon resin, LTCC or the like conventionally used as a substrate of a resonance part 1, and on which a fine pattern of metal film can be formed through a photolithography method, is used as a quartz-crystal substrate 10, and a conductive line is formed on the quartz-crystal substrate 10 to form an inductance element 11 in the resonance part 1. Accordingly, since the resonance part 1 having a high Q value can be formed, it is possible to obtain a voltage controlled oscillator having small size and low loss over a wide frequency band.

Abstract: There is provided a voltage controlled oscillator that is compact and can be manufactured at low cost. The voltage controlled oscillator is structured to include: a resonance part including a variable capacitance element and an inductance element, the variable capacitance element having a capacitance that varies according to a control voltage for frequency control input from an external part, and a series resonant frequency of the resonance part being adjusted according to the capacitance; an amplifying part amplifying a frequency signal from the resonance part; and a feedback part including a capacitance element for feedback and feeding the frequency signal amplified by the amplifying part back to the resonance part to form an oscillation loop together with the amplifying part and the resonance part, wherein the amplifying part is provided in an integrated circuit chip, and the resonance part and the capacitance element for feedback are formed as circuit components separate from the integrated circuit chip.

Abstract: Disclosed is a miniaturized duplexer having a good isolation characteristic. A duplexer having a high band side filter and a low band side filter that are each formed in a ladder-type filter provided on a common piezoelectric substrate is provided with a first elastic wave resonator to be included in one of these filters, a second elastic wave resonator to be included in the other of the filters, and a first additional grating reflector provided between these resonators to reflect an elastic wave leaked from a grating reflector of the first elastic wave resonator, and in which an additional grating reflector is not provided on a side opposite to the second elastic wave resonator in the first elastic wave resonator.

Abstract: To improve an isolation characteristic in a pass frequency band of a high band side filter 12 in a duplexer including a low band side filter 11 and the high band side filter 12. In a low band side filter 11 in a duplexer formed on a piezoelectric substrate 10 and in which transmission and reception of signals are respectively performed from either of the low band side filter 11 and the high band side filter 12 and the other filter with respect to an input/output port 14, series arms and parallel arms each formed of an elastic wave resonator 5 form the low band side filter 11, and a shield electrode 50 extending to a position close to at least either of the input/output port 14 and a low band side filter port 15 and grounded is disposed.

Abstract: To provide a receiving side filter of a duplexer and a duplexer capable of preventing a leakage of an electric field and a magnetic field to the outside. In a receiving side filter having a longitudinal mode resonator type filter including cross finger electrodes and reflectors respectively formed on a piezoelectric substrate and an unbalanced input signal path and balanced output ports respectively provided on an input side and on an output side of the longitudinal mode resonator type filter, and used on a receiving side of a duplexer, a shield electrode connected to a ground electrode side of the cross finger electrode is disposed to surround a periphery of the receiving side filter so that an electric field and a magnetic field leaked to the outside from the receiving side filter are short-circuited by the shield electrode.

Abstract: In order to reduce the parts required for matching of an SAW filter module, the SAW filter module 10 obtains matching for coupling SAW filters 10A to 10D with RF-IC 20 using impedance matching circuits 11A to 11D. The real part of output impedance Z saw of the SAW filter is closely matched with the real part of input impedance Zic of an RF-IC. The impedance matching circuit modifies the imaginary part of the output impedance Zm of the SAW filter module according to the imaginary part of the input impedance Zic of the RF-IC 20. The impedance matching circuit composed of one piece of inductance or capacitor, or a plurality of inductors or capacitors in parallel connection, ans formed as a print pattern on a module substrate, in which the real part R saw and the real part Ric are in a relation nearly of 0.8 Ric<R saw<1.2 Ric.