Patents by Inventor Suvi P. Haukka
Suvi P. Haukka has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20120189774Abstract: The invention relates generally to processes for enhancing the deposition of noble metal thin films on a substrate by atomic layer deposition. Treatment with gaseous halides or metalorganic compounds reduces the incubation time for deposition of noble metals on particular surfaces. The methods may be utilized to facilitate selective deposition. For example, selective deposition of noble metals on high-k materials relative to insulators can be enhanced by pretreatment with halide reactants. In addition, halide treatment can be used to avoid deposition on the quartz walls of the reaction chamber.Type: ApplicationFiled: September 21, 2011Publication date: July 26, 2012Applicant: ASM INTERNATIONAL N.V.Inventors: Suvi P. Haukka, Marko J. Tuominen, Antti Rahtu
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Publication number: 20110256718Abstract: Thin films are formed by formed by atomic layer deposition, whereby the composition of the film can be varied from monolayer to monolayer during cycles including alternating pulses of self-limiting chemistries. In the illustrated embodiments, varying amounts of impurity sources are introduced during the cyclical process. A graded gate dielectric is thereby provided, even for extremely thin layers. The gate dielectric as thin as 2 nm can be varied from pure silicon oxide to oxynitride to silicon nitride. Similarly, the gate dielectric can be varied from aluminum oxide to mixtures of aluminum oxide and a higher dielectric material (e.g., ZrO2) to pure high k material and back to aluminum oxide. In another embodiment, metal nitride (e.g., WN) is first formed as a barrier for lining dual damascene trenches and vias. During the alternating deposition process, copper can be introduced, e.g.Type: ApplicationFiled: April 4, 2011Publication date: October 20, 2011Applicant: ASM INTERNATIONAL N.V.Inventors: Suvi P. Haukka, Ivo Raaijmakers, Wei Min Li, Juhana Kostamo, Hessel Sprey, Christiaan J. Werkhoven
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Patent number: 8025922Abstract: The invention relates generally to processes for enhancing the deposition of noble metal thin films on a substrate by atomic layer deposition. Treatment with gaseous halides or metalorganic compounds reduces the incubation time for deposition of noble metals on particular surfaces. The methods may be utilized to facilitate selective deposition. For example, selective deposition of noble metals on high-k materials relative to insulators can be enhanced by pretreatment with halide reactants. In addition, halide treatment can be used to avoid deposition on the quartz walls of the reaction chamber.Type: GrantFiled: March 14, 2006Date of Patent: September 27, 2011Assignee: ASM International N.V.Inventors: Suvi P. Haukka, Marko J. Tuominen, Antti Rahtu
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Patent number: 7981791Abstract: Thin films are formed by formed by atomic layer deposition, whereby the composition of the film can be varied from monolayer to monolayer during cycles including alternating pulses of self-limiting chemistries. In the illustrated embodiments, varying amounts of impurity sources are introduced during the cyclical process. A graded gate dielectric is thereby provided, even for extremely thin layers. The gate dielectric as thin as 2 nm can be varied from pure silicon oxide to oxynitride to silicon nitride. Similarly, the gate dielectric can be varied from aluminum oxide to mixtures of aluminum oxide and a higher dielectric material (e.g., ZrO2) to pure high k material and back to aluminum oxide. In another embodiment, metal nitride (e.g., WN) is first formed as a barrier for lining dual damascene trenches and vias. During the alternating deposition process, copper can be introduced, e.g.Type: GrantFiled: August 29, 2008Date of Patent: July 19, 2011Assignee: ASM International N.V.Inventors: Suvi P. Haukka, Ivo Raaijmakers, Wei Min Li, Juhana Kostamo, Hessel Sprey, Christiaan J. Werkhoven
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Publication number: 20110146568Abstract: Methods of forming thin films on nanopatterning templates, such as nanoimprint lithography (NIL) templates are provided. In some embodiments, an atomic layer deposition (ALD) type process for modifying the surface of a NIL template comprises alternately and sequentially contacting a substrate in a reaction space with vapor phase pulses of two or more reactants.Type: ApplicationFiled: December 21, 2007Publication date: June 23, 2011Applicant: ASM International N.V.Inventors: Suvi P. Haukka, Kai-Erik Elers
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Patent number: 7749871Abstract: The present method provides tools for growing conformal metal nitride, metal carbide and metal thin films, and nanolaminate structures incorporating these films, from aggressive chemicals. The amount of corrosive chemical compounds, such as hydrogen halides, is reduced during the deposition of transition metal, transition metal carbide and transition metal nitride thin films on various surfaces, such as metals and oxides. Getter compounds protect surfaces sensitive to hydrogen halides and ammonium halides, such as aluminum, copper, silicon oxide and the layers being deposited, against corrosion. Nanolaminate structures (20) incorporating metal nitrides, such as titanium nitride (30) and tungsten nitride (40), and metal carbides, and methods for forming the same, are also disclosed.Type: GrantFiled: November 28, 2005Date of Patent: July 6, 2010Assignee: ASM International N.V.Inventors: Kai-Erik Elers, Suvi P. Haukka, Ville Antero Saanila, Sari Johanna Kaipio, Pekka Juha Soininen
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Patent number: 7704896Abstract: Germanium has higher mobility than silicon and therefore is considered to be a good alternative semiconductor for CMOS technology. Surface treatments a can facilitate atomic layer deposition (ALD) of thin films, such as high-k dielectric layers, on germanium substrates. Surface treatment can comprise the formation of a thin layer of GeOx or GeOxNy. After surface treatment and prior to deposition of the desired thin film, a passivation layer may be deposited on the substrate. The passivation layer may be, for example, a metal oxide layer deposited by ALD.Type: GrantFiled: January 20, 2006Date of Patent: April 27, 2010Assignee: ASM International, N.V.Inventors: Suvi P. Haukka, Marko Tuominen, Antti Rahtu
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Patent number: 7691757Abstract: Methods are provided for pulsed chemical vapor deposition (CVD) of complex nitrides, such as ternary metal nitrides. Pulses of metal halide precursors are separated from one another and nitrogen-containing precursor is provided during the metal halide precursor pulses as well as between the metal halide precursor pulses. Two different metal halide precursors can be provided in simultaneous pulses, alternatingly, or in a variety of sequences. The nitrogen-containing precursor, such as ammonia, can be provided in pulses simultaneously with the metal halide precursors and between the metal halide precursors, or continuously throughout the deposition. Temperatures can be kept between about 300° C. and about 700° C.Type: GrantFiled: June 21, 2007Date of Patent: April 6, 2010Assignee: ASM International N.V.Inventors: Suvi P. Haukka, Tanja Claasen, Peter Zagwijn
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Patent number: 7670944Abstract: Method and structures are provided for conformal lining of dual damascene structures in integrated circuits. Trenches and contact vias are formed in insulating layers. The trenches and vias are exposed to alternating chemistries to form monolayers of a desired lining material. Exemplary process flows include alternately pulsed metal halide and ammonia gases injected into a constant carrier flow. Self-terminated metal layers are thus reacted with nitrogen. Near perfect step coverage allows minimal thickness for a diffusion barrier function, thereby maximizing the volume of a subsequent filling metal for any given trench and via dimensions.Type: GrantFiled: August 28, 2006Date of Patent: March 2, 2010Assignee: ASM International N.V.Inventors: Ivo Raaijmakers, Suvi P. Haukka, Ville A. Saanila, Pekka J. Soininen, Kai-Erik Elers, Ernst H.A. Granneman
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Publication number: 20090315093Abstract: Methods of forming metal carbide films are provided. In some embodiments, a substrate is exposed to alternating pulses of a transition metal species and an aluminum hydrocarbon compound, such as TMA, DMAH, or TEA. The aluminum hydrocarbon compound is selected to achieve the desired properties of the metal carbide film, such as aluminum concentration, resistivity, adhesion and oxidation resistance. In some embodiments, the methods are used to form a metal carbide layer that determines the work function of a control gate in a flash memory.Type: ApplicationFiled: April 15, 2009Publication date: December 24, 2009Applicant: ASM AMERICA, INC.Inventors: Dong LI, Steven MARCUS, Suvi P. HAUKKA, Wei-Min LI
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Publication number: 20090246367Abstract: Methods of forming a roughened metal surface on a substrate for nucleating carbon nanotube growth, and subsequently growing carbon nanotubes are provided. In preferred embodiments roughened surfaces are formed by selectively depositing metal or metal oxide on a substrate surface to form discrete, three-dimensional islands. Selective deposition may be obtained, for example, by modifying process conditions to cause metal agglomeration or by treating the substrate surface to provide a limited number of discontinuous reactive sites. The roughened metal surface may then be used as nucleation points for initiating carbon nanotube growth. The carbon nanotubes are grown in the same process chamber (in-situ) as the formation of the three dimensional metal islands without exposing the substrate to air.Type: ApplicationFiled: March 28, 2008Publication date: October 1, 2009Inventors: Hannu A. Huotari, Suvi P. Haukka
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Publication number: 20090209081Abstract: Methods are provided for depositing silicon dioxide containing thin films on a substrate by atomic layer deposition ALD. By using disilane compounds as the silicon source, good deposition rates and uniformity are obtained.Type: ApplicationFiled: December 19, 2008Publication date: August 20, 2009Applicant: ASM International N.V.Inventors: Raija H. MATERO, Suvi P. Haukka
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Publication number: 20090068832Abstract: Thin films are formed by formed by atomic layer deposition, whereby the composition of the film can be varied from monolayer to monolayer during cycles including alternating pulses of self-limiting chemistries. In the illustrated embodiments, varying amounts of impurity sources are introduced during the cyclical process. A graded gate dielectric is thereby provided, even for extremely thin layers. The gate dielectric as thin as 2 nm can be varied from pure silicon oxide to oxynitride to silicon nitride. Similarly, the gate dielectric can be varied from aluminum oxide to mixtures of aluminum oxide and a higher dielectric material (e.g., ZrO2) to pure high k material and back to aluminum oxide. In another embodiment, metal nitride (e.g., WN) is first formed as a barrier for lining dual damascene trenches and vias. During the alternating deposition process, copper can be introduced, e.g.Type: ApplicationFiled: August 29, 2008Publication date: March 12, 2009Applicant: ASM INTERNATIONAL N.V.Inventors: Suvi P. Haukka, Ivo Raaijmakers, Wei Min Li, Juhana Kostamo, Hessel Sprey, Christrian J. Werkhoven
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Patent number: 7419903Abstract: Thin films are formed by formed by atomic layer deposition, whereby the composition of the film can be varied from monolayer to monolayer during cycles including alternating pulses of self-limiting chemistries. In the illustrated embodiments, varying amounts of impurity sources are introduced during the cyclical process. A graded gate dielectric is thereby provided, even for extremely thin layers. The gate dielectric as thin as 2 nm can be varied from pure silicon oxide to oxynitride to silicon nitride. Similarly, the gate dielectric can be varied from aluminum oxide to mixtures of aluminum oxide and a higher dielectric material (e.g., ZrO2) to pure high k material and back to aluminum oxide. In another embodiment, metal nitride (e.g., WN) is first formed as a barrier for lining dual damascene trenches and vias. During the alternating deposition process, copper can be introduced, e.g.Type: GrantFiled: April 13, 2005Date of Patent: September 2, 2008Assignee: ASM International N.V.Inventors: Suvi P. Haukka, Ivo Raaijmakers, Wei Min Li, Juhana Kostamo, Hessel Sprey
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Patent number: 7329590Abstract: The present method provides tools for growing conformal metal nitride, metal carbide and metal thin films, and nanolaminate structures incorporating these films, from aggressive chemicals. The amount of corrosive chemical compounds, such as hydrogen halides, is reduced during the deposition of transition metal, transition metal carbide and transition metal nitride thin films on various surfaces, such as metals and oxides. Getter compounds protect surfaces sensitive to hydrogen halides and ammonium halides, such as aluminum, copper, silicon oxide and the layers being deposited, against corrosion. Nanolaminate structures (20) incorporating metal nitrides, such as titanium nitride (30) and tungsten nitride (40), and metal carbides, and methods for forming the same, are also disclosed.Type: GrantFiled: October 19, 2004Date of Patent: February 12, 2008Assignee: ASM International N.V.Inventors: Kai-Erik Elers, Suvi P. Haukka, Ville Antero Saanila, Sari Johanna Kaipio, Pekka Juha Soininen
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Patent number: 7102235Abstract: Method and structures are provided for conformal lining of dual damascene structures in integrated circuits. Trenches and contact vias are formed in insulating layers. The trenches and vias are exposed to alternating chemistries to form monolayers of a desired lining material. Exemplary process flows include alternately pulsed metal halide and ammonia gases injected into a constant carrier flow. Self-terminated metal layers are thus reacted with nitrogen. Near perfect step coverage allows minimal thickness for a diffusion barrier function, thereby maximizing the volume of a subsequent filling metal for any given trench and via dimensions.Type: GrantFiled: December 15, 2003Date of Patent: September 5, 2006Assignee: ASM International N.V.Inventors: Ivo Raaijmakers, Suvi P. Haukka, Yille A. Saanila, Pekka J. Soininen, Kai-Erik Elers, Ernst H. A. Granneman
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Patent number: 7038284Abstract: An ultrathin aluminum oxide and lanthanide layers, particularly formed by an atomic layer deposition (ALD) type process, serve as interface layers between two or more materials. The interface layers can prevent oxidation of a substrate and can prevent diffusion of molecules between the materials. In the illustrated embodiments, a high-k dielectric material is sandwiched between two layers of aluminum oxide or lanthanide oxide in the formation of a transistor gate dielectric or a memory cell dielectric. Aluminum oxides can serve as a nucleation layer with less than a full monolayer of aluminum oxide. One monolayer or greater can also serve as a diffusion barrier, protecting the substrate from oxidation and the high-k dielectric from impurity diffusion. Nanolaminates can be formed with multiple alternating interface layers and high-k layers, where intermediate interface layers can break up the crystal structure of the high-k materials and lower leakage levels.Type: GrantFiled: September 2, 2003Date of Patent: May 2, 2006Assignee: ASM International, N.V.Inventors: Suvi P. Haukka, Jarmo Skarp, Marko Tuominen
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Patent number: 6933225Abstract: Thin films are formed by atomic layer deposition, whereby the composition of the film can be varied from monolayer to monolayer during cycles including alternating pulses of self-limiting chemistries. In the illustrated embodiments, varying amounts of impurity sources are introduced during the cyclical process. A graded gate dielectric is thereby provided, even for extremely thin layers. The gate dielectric as thin as 2 nm can be varied from pure silicon oxide to oxynitride to silicon nitride. Similarly, the gate dielectric can be varied from aluminum oxide to mixtures of aluminum oxide and a higher dielectric material (e.g., ZrO2) to pure high k material and back to aluminum oxide. In another embodiment, metal nitride (e.g., WN) is first formed as a barrier for lining dual damascene trenches and vias. During the alternating deposition process, copper can be introduced, e.g.Type: GrantFiled: September 23, 2002Date of Patent: August 23, 2005Assignee: ASM International N.V.Inventors: Christiaan J. Werkhoven, Ivo Raaijmakers, Suvi P. Haukka
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Patent number: 6902763Abstract: The present method provides tools for growing conformal metal nitride, metal carbide and metal thin films, and nanolaminate structures incorporating these films, from aggressive chemicals. The amount of corrosive chemical compounds, such as hydrogen halides, is reduced during the deposition of transition metal, transition metal carbide and transition metal nitride thin films on various surfaces, such as metals and oxides. Getter compounds protect surface sensitive to hydrogen halides and ammonium halides, such as aluminum, copper, silicon oxide and the layers being deposited, against corrosion. Nanolaminate structures (20) incorporating metal nitrides, such as titanium nitride (30) and tungsten nitride (40), and metal carbides, and methods for forming the same, are also disclosed.Type: GrantFiled: October 16, 2000Date of Patent: June 7, 2005Assignee: ASM International N.V.Inventors: Kai-Erik Elers, Suvi P. Haukka, Ville Antero Saanila, Sari Johanna Kaipio, Pekka Juha Soininen
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Patent number: 6852635Abstract: Methods are disclosed for selective deposition on desired materials. In particular, barrier materials are selectively formed on insulating surfaces, as compared to conductive surfaces. In the context of contact formation and trench fill, particularly damascene and dual damascene metallization, the method advantageously lines insulating surfaces with a barrier material. The selective formation allows the deposition to be “bottomless,” thus leaving the conductive material at a via bottom exposed for direct metal-to-metal contact when further conductive material is deposited into the opening after barrier formation on the insulating surfaces. Desirably, the selective deposition is accomplished by atomic layer deposition (ALD), resulting in highly conformal coverage of the insulating sidewalls in the opening.Type: GrantFiled: December 8, 2003Date of Patent: February 8, 2005Assignees: Interuniversitair Nizroelecmica, ASM International NVInventors: Alessandra Satta, Karen Maex, Kai-Erik Elers, Ville Antero Saanila, Pekka Juha Soininen, Suvi P. Haukka