Patents by Inventor Suvi P. Haukka

Suvi P. Haukka has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9721786
    Abstract: In some aspects, methods of forming a metal sulfide thin film are provided. According to some methods, a metal sulfide thin film is deposited on a substrate in a reaction space in a cyclical process where at least one cycle includes alternately and sequentially contacting the substrate with a first vapor-phase metal reactant and a second vapor-phase sulfur reactant. In some aspects, methods of forming a three-dimensional architecture on a substrate surface are provided. In some embodiments, the method includes forming a metal sulfide thin film on the substrate surface and forming a capping layer over the metal sulfide thin film. The substrate surface may comprise a high-mobility channel.
    Type: Grant
    Filed: January 11, 2016
    Date of Patent: August 1, 2017
    Assignee: ASM IP Holding B.V.
    Inventors: Suvi P. Haukka, Fu Tang, Michael E. Givens, Jan Willem Maes, Qi Xie
  • Patent number: 9679808
    Abstract: Metallic layers can be selectively deposited on surfaces of a substrate relative to a second surface of the substrate. In preferred embodiments, the metallic layers are selectively deposited on copper instead of insulating or dielectric materials. In preferred embodiments, a first precursor forms a layer or adsorbed species on the first surface and is subsequently reacted or converted to form a metallic layer. Preferably the deposition temperature is selected such that a selectivity of above about 90% is achieved.
    Type: Grant
    Filed: January 5, 2016
    Date of Patent: June 13, 2017
    Assignee: ASM INTERNATIONAL N.V.
    Inventors: Suvi P. Haukka, Antti Niskanen, Marko Tuominen
  • Publication number: 20170133216
    Abstract: Methods and precursors for depositing silicon nitride films by atomic layer deposition (ALD) are provided. In some embodiments the silicon precursors comprise an iodine ligand. The silicon nitride films may have a relatively uniform etch rate for both vertical and the horizontal portions when deposited onto three-dimensional structures such as FinFETS or other types of multiple gate FETs. In some embodiments, various silicon nitride films of the present disclosure have an etch rate of less than half the thermal oxide removal rate with diluted HF (0.5%).
    Type: Application
    Filed: January 24, 2017
    Publication date: May 11, 2017
    Inventors: Antti J. Niskanen, Shang Chen, Viljami Pore, Atsuki Fukazawa, Hideaki Fukuda, Suvi P. Haukka
  • Patent number: 9634106
    Abstract: In one aspect, methods of silicidation and germanidation are provided. In some embodiments, methods for forming metal silicide can include forming a non-oxide interface, such as germanium or solid antimony, over exposed silicon regions of a substrate. Metal oxide is formed over the interface layer. Annealing and reducing causes metal from the metal oxide to react with the underlying silicon and form metal silicide. Additionally, metal germanide can be formed by reduction of metal oxide over germanium, whether or not any underlying silicon is also silicided. In other embodiments, nickel is deposited directly and an interface layer is not used. In another aspect, methods of depositing nickel thin films by vapor phase deposition processes are provided. In some embodiments, nickel thin films are deposited by ALD.
    Type: Grant
    Filed: July 31, 2015
    Date of Patent: April 25, 2017
    Assignee: ASM INTERNATIONAL N.V.
    Inventors: Viljami J. Pore, Suvi P. Haukka, Tom E. Blomberg, Eva E. Tois
  • Patent number: 9631272
    Abstract: Methods of forming metal carbide films are provided. In some embodiments, a substrate is exposed to alternating pulses of a transition metal species and an aluminum hydrocarbon compound, such as TMA, DMAH, or TEA. The aluminum hydrocarbon compound is selected to achieve the desired properties of the metal carbide film, such as aluminum concentration, resistivity, adhesion and oxidation resistance. In some embodiments, the methods are used to form a metal carbide layer that determines the work function of a control gate in a flash memory.
    Type: Grant
    Filed: November 1, 2013
    Date of Patent: April 25, 2017
    Assignee: ASM AMERICA, INC.
    Inventors: Dong Li, Steven Marcus, Suvi P. Haukka, Wei-Min Li
  • Publication number: 20170069527
    Abstract: Metallic layers can be selectively deposited on one surface of a substrate relative to a second surface of the substrate. In some embodiments, the metallic layers are selectively deposited on copper instead of insulating or dielectric materials. In some embodiments, a first precursor forms a layer on the first surface and is subsequently reacted or converted to form a metallic layer. The deposition temperature may be selected such that a selectivity of above about 50% or even about 90% is achieved.
    Type: Application
    Filed: November 18, 2016
    Publication date: March 9, 2017
    Inventors: Suvi P. Haukka, Antti Niskanen, Marko Tuominen
  • Patent number: 9587307
    Abstract: The invention relates generally to processes for enhancing the deposition of noble metal thin films on a substrate by atomic layer deposition. Treatment with gaseous halides or metalorganic compounds reduces the incubation time for deposition of noble metals on particular surfaces. The methods may be utilized to facilitate selective deposition. For example, selective deposition of noble metals on high-k materials relative to insulators can be enhanced by pretreatment with halide reactants. In addition, halide treatment can be used to avoid deposition on the quartz walls of the reaction chamber.
    Type: Grant
    Filed: July 24, 2013
    Date of Patent: March 7, 2017
    Assignee: ASM INTERNATIONAL N.V.
    Inventors: Suvi P. Haukka, Marko J. Tuominen, Antti Rahtu
  • Publication number: 20170037513
    Abstract: Methods are provided for selectively depositing a material on a first metal or metallic surface of a substrate relative to a second, dielectric surface of the substrate, or for selectively depositing metal oxides on a first metal oxide surface of a substrate relative to a second silicon oxide surface. The selectively deposited material can be, for example, a metal, metal oxide, metal nitride, metal silicide, metal carbide and/or dielectric material. In some embodiments a substrate comprising a first metal or metallic surface and a second dielectric surface is alternately and sequentially contacted with a first vapor-phase metal halide reactant and a second reactant. In some embodiments a substrate comprising a first metal oxide surface and a second silicon oxide surface is alternately and sequentially contacted with a first vapor phase metal fluoride or chloride reactant and water.
    Type: Application
    Filed: July 27, 2016
    Publication date: February 9, 2017
    Inventors: Suvi P. Haukka, Raija H. Matero, Elina Färm, Tom E. Blomberg
  • Patent number: 9564309
    Abstract: Methods and precursors for depositing silicon nitride films by atomic layer deposition (ALD) are provided. In some embodiments the silicon precursors comprise an iodine ligand. The silicon nitride films may have a relatively uniform etch rate for both vertical and the horizontal portions when deposited onto three-dimensional structures such as FinFETS or other types of multiple gate FETs. In some embodiments, various silicon nitride films of the present disclosure have an etch rate of less than half the thermal oxide removal rate with diluted HF (0.5%).
    Type: Grant
    Filed: January 29, 2014
    Date of Patent: February 7, 2017
    Assignee: ASM IP Holding B.V.
    Inventors: Antti J. Niskanen, Shang Chen, Viljami Pore, Atsuki Fukazawa, Hideaki Fukuda, Suvi P. Haukka
  • Publication number: 20170018433
    Abstract: In one aspect, methods of silicidation and germanidation are provided. In some embodiments, methods for forming metal silicide can include forming a non-oxide interface, such as germanium or solid antimony, over exposed silicon regions of a substrate. Metal oxide is formed over the interface layer. Annealing and reducing causes metal from the metal oxide to react with the underlying silicon and form metal silicide. Additionally, metal germanide can be formed by reduction of metal oxide over germanium, whether or not any underlying silicon is also silicided. In other embodiments, nickel is deposited directly and an interface layer is not used. In another aspect, methods of depositing nickel thin films by vapor phase deposition processes are provided. In some embodiments, nickel thin films are deposited by ALD. Nickel thin films can be used directly in silicidation and germanidation processes.
    Type: Application
    Filed: June 20, 2016
    Publication date: January 19, 2017
    Inventors: Viljami J. Pore, Suvi P. Haukka, Tom E. Blomberg, Eva E. Tois
  • Patent number: 9502289
    Abstract: Metallic layers can be selectively deposited on one surface of a substrate relative to a second surface of the substrate. In some embodiments, the metallic layers are selectively deposited on copper instead of insulating or dielectric materials. In some embodiments, a first precursor forms a layer on the first surface and is subsequently reacted or converted to form a metallic layer. The deposition temperature may be selected such that a selectivity of above about 50% or even about 90% is achieved.
    Type: Grant
    Filed: June 11, 2015
    Date of Patent: November 22, 2016
    Assignee: ASM INTERNATIONAL N.V.
    Inventors: Suvi P. Haukka, Antti Niskanen, Marko Tuominen
  • Patent number: 9478419
    Abstract: In some aspects, methods of forming a metal sulfide thin film are provided. According to some methods, a metal sulfide thin film is deposited on a substrate in a reaction space in a cyclical process where at least one cycle includes alternately and sequentially contacting the substrate with a first vapor-phase metal reactant and a second vapor-phase sulfur reactant. In some aspects, methods of forming a three-dimensional architecture on a substrate surface are provided. In some embodiments, the method includes forming a metal sulfide thin film on the substrate surface and forming a capping layer over the metal sulfide thin film. The substrate surface may comprise a high-mobility channel.
    Type: Grant
    Filed: December 18, 2013
    Date of Patent: October 25, 2016
    Assignee: ASM IP Holding B.V.
    Inventors: Suvi P. Haukka, Fu Tang, Michael Givens, Jan Willem Maes, Qi Xie
  • Publication number: 20160276208
    Abstract: Metallic layers can be selectively deposited on surfaces of a substrate relative to a second surface of the substrate. In preferred embodiments, the metallic layers are selectively deposited on copper instead of insulating or dielectric materials. In preferred embodiments, a first precursor forms a layer or adsorbed species on the first surface and is subsequently reacted or converted to form a metallic layer. Preferably the deposition temperature is selected such that a selectivity of above about 90% is achieved.
    Type: Application
    Filed: January 5, 2016
    Publication date: September 22, 2016
    Inventors: Suvi P. Haukka, Antti Niskanen, Marko Tuominen
  • Publication number: 20160222504
    Abstract: Methods are provided for selectively depositing a surface of a substrate relative to a second, different surface. An exemplary deposition method can include selectively depositing a material, such as a material comprising nickel, nickel nitride, cobalt, iron, and/or titanium oxide on a first surface, such as a SiO2 surface, relative to a second, different surface, such as a H-terminated surface, of the same substrate. Methods can include treating a surface of the substrate to provide H-terminations prior to deposition.
    Type: Application
    Filed: February 2, 2016
    Publication date: August 4, 2016
    Inventors: Suvi P. Haukka, Eva Tois
  • Publication number: 20160203974
    Abstract: In some aspects, methods of forming a metal sulfide thin film are provided. According to some methods, a metal sulfide thin film is deposited on a substrate in a reaction space in a cyclical process where at least one cycle includes alternately and sequentially contacting the substrate with a first vapor-phase metal reactant and a second vapor-phase sulfur reactant. In some aspects, methods of forming a three-dimensional architecture on a substrate surface are provided. In some embodiments, the method includes forming a metal sulfide thin film on the substrate surface and forming a capping layer over the metal sulfide thin film. The substrate surface may comprise a high-mobility channel.
    Type: Application
    Filed: January 11, 2016
    Publication date: July 14, 2016
    Inventors: Suvi P. Haukka, Fu Tang, Michael E. Givens, Jan Willem Maes, Qi Xie
  • Patent number: 9379011
    Abstract: In one aspect, methods of silicidation and germanidation are provided. In some embodiments, methods for forming metal silicide can include forming a non-oxide interface, such as germanium or solid antimony, over exposed silicon regions of a substrate. Metal oxide is formed over the interface layer. Annealing and reducing causes metal from the metal oxide to react with the underlying silicon and form metal silicide. Additionally, metal germanide can be formed by reduction of metal oxide over germanium, whether or not any underlying silicon is also silicided. In other embodiments, nickel is deposited directly and an interface layer is not used. In another aspect, methods of depositing nickel thin films by vapor phase deposition processes are provided. In some embodiments, nickel thin films are deposited by ALD. Nickel thin films can be used directly in silicidation and germanidation processes.
    Type: Grant
    Filed: August 22, 2012
    Date of Patent: June 28, 2016
    Assignee: ASM INTERNATIONAL N.V.
    Inventors: Viljami J. Pore, Suvi P. Haukka, Tom E. Blomberg, Eva E. Tois
  • Patent number: 9257303
    Abstract: Metallic layers can be selectively deposited on surfaces of a substrate relative to a second surface of the substrate. In preferred embodiments, the metallic layers are selectively deposited on copper instead of insulating or dielectric materials. In preferred embodiments, a first precursor forms a layer or adsorbed species on the first surface and is subsequently reacted or converted to form a metallic layer. Preferably the deposition temperature is selected such that a selectivity of above about 90% is achieved.
    Type: Grant
    Filed: February 3, 2015
    Date of Patent: February 9, 2016
    Assignee: ASM INTERNATIONAL N.V.
    Inventors: Suvi P. Haukka, Antti Niskanen, Marko Tuominen
  • Publication number: 20160035852
    Abstract: In one aspect, methods of silicidation and germanidation are provided. In some embodiments, methods for forming metal silicide can include forming a non-oxide interface, such as germanium or solid antimony, over exposed silicon regions of a substrate. Metal oxide is formed over the interface layer. Annealing and reducing causes metal from the metal oxide to react with the underlying silicon and form metal silicide. Additionally, metal germanide can be formed by reduction of metal oxide over germanium, whether or not any underlying silicon is also silicided. In other embodiments, nickel is deposited directly and an interface layer is not used. In another aspect, methods of depositing nickel thin films by vapor phase deposition processes are provided. In some embodiments, nickel thin films are deposited by ALD.
    Type: Application
    Filed: July 31, 2015
    Publication date: February 4, 2016
    Inventors: VILJAMI J. PORE, SUVI P. HAUKKA, TOM E. BLOMBERG, EVA E. TOIS
  • Patent number: 9245742
    Abstract: In some aspects, methods of forming a metal sulfide thin film are provided. According to some methods, a metal sulfide thin film is deposited on a substrate in a reaction space in a cyclical process where at least one cycle includes alternately and sequentially contacting the substrate with a first vapor-phase metal reactant and a second vapor-phase sulfur reactant. In some aspects, methods of forming a three-dimensional architecture on a substrate surface are provided. In some embodiments, the method includes forming a metal sulfide thin film on the substrate surface and forming a capping layer over the metal sulfide thin film. The substrate surface may comprise a high-mobility channel.
    Type: Grant
    Filed: December 18, 2013
    Date of Patent: January 26, 2016
    Assignee: ASM IP HOLDING B.V.
    Inventors: Suvi P. Haukka, Fu Tang, Michael Givens, Jan Willem Maes, Qi Xie
  • Publication number: 20160005649
    Abstract: Metallic layers can be selectively deposited on one surface of a substrate relative to a second surface of the substrate. In some embodiments, the metallic layers are selectively deposited on copper instead of insulating or dielectric materials. In some embodiments, a first precursor forms a layer on the first surface and is subsequently reacted or converted to form a metallic layer. The deposition temperature may be selected such that a selectivity of above about 50% or even about 90% is achieved.
    Type: Application
    Filed: June 11, 2015
    Publication date: January 7, 2016
    Inventors: Suvi P. Haukka, Antti Niskanen, Marko Tuominen