Abstract: The method comprises affixing a thin sheet of crystal (8) onto metal (6) of same type as the sheet but amorphous or of small grain size, deposited in trenches of a substrate (1) to form interconnect lines for example. Annealing progressively imposes the crystalline structure of the sheet onto the lines. When the crystal (8) is removed, highly conductive crystalline lines are obtained since the grains thereof have been greatly enlarged.

Abstract: The method comprises affixing a thin sheet of crystal (8) onto metal (6) of same type as the sheet but amorphous or of small grain size, deposited in trenches of a substrate (1) to form interconnect lines for example. Annealing progressively imposes the crystalline structure of the sheet onto the lines. When the crystal (8) is removed, highly conductive crystalline lines are obtained since the grains thereof have been greatly enlarged.

Abstract: A method for forming a nanotube/nanofiber growth catalyst on the sides of portions of a layer of a first material, comprising the steps of depositing a thin layer of a second material; opening this layer at given locations; depositing a very thin catalyst layer; depositing a layer of the first material over a thickness greater than that of the layer of the second material; eliminating by chem./mech. polishing the upper portion of the structure up to the high level of the layer of the second material; and eliminating the second material facing selected sides of the layer portions of the first material.

Abstract: A method for forming a nanotube/nanofiber growth catalyst on the sides of portions of a layer of a first material, comprising the steps of depositing a thin layer of a second material; opening this layer at given locations; depositing a very thin catalyst layer; depositing a layer of the first material over a thickness greater than that of the layer of the second material; eliminating by chem./mech. polishing the upper portion of the structure up to the high level of the layer of the second material; and eliminating the second material facing selected sides of the layer portions of the first material.

Abstract: The present invention relates to a process for coating a surface of a substrate with a seed film of a metallic material, the said surface being an electrically conductive or semiconductive surface and having recesses and/or projections. The process comprises the following: an organic film is placed on the said surface, the said film having a thickness such that the free face of this film conformally follows the recesses and/or projections of the said electrically conductive or semiconductive surface on which it is placed; a precursor of the metallic material is inserted within the said organic film placed on the said surface at the same time as, or after, the step consisting in placing the said organic film on the said surface; and the said precursor of the metallic material inserted within the said organic film is converted into the said metallic material. This process allows integrated circuits, interconnects in microelectronics and microsystems to be fabricated.