Abstract: An elastic wave device includes a supporting substrate, a high-acoustic-velocity film stacked on the supporting substrate and in which an acoustic velocity of a bulk wave propagating therein is higher than an acoustic velocity of an elastic wave propagating in a piezoelectric film, a low-acoustic-velocity film stacked on the high-acoustic-velocity film and in which an acoustic velocity of a bulk wave propagating therein is lower than an acoustic velocity of a bulk wave propagating in the piezoelectric film, the piezoelectric film is stacked on the low-acoustic-velocity film, and an IDT electrode stacked on a surface of the piezoelectric film.

Abstract: A radio-frequency module includes a hybrid filter for 5th Generation New Radio (5G-NR) n77, a filter for 5G-NR n79, power amplifiers, a third inductor coupled to the power amplifier, and a fourth inductor coupled to a power amplifier. When a module substrate is viewed in plan view, the power amplifiers are disposed in a first quadrant, the third inductor and the fourth inductor are disposed in a second quadrant, the hybrid filter and the filter are disposed in a third quadrant, the power amplifier is disposed closer to a reference point than the power amplifier, the third inductor is disposed closer to the reference point than the fourth inductor, and the hybrid filter is disposed closer to the reference point than the filter.

Abstract: A radio-frequency module includes a module substrate, a hybrid filter for 5th Generation New Radio (5G-NR) n77 including a first acoustic wave resonator element, a first inductor, and a first capacitor, a filter for 5G-NR n79 including a second acoustic wave resonator element and a second inductor, power amplifiers, a third inductor coupled between the power amplifier and the hybrid filter, and a fourth inductor coupled between the power amplifier and the filter. The first inductor, the second inductor, the third inductor, and the fourth inductor are disposed at a major surface or inside the module substrate. The distance between the first inductor and the third inductor is larger than the distance between the second inductor and the fourth inductor.

Abstract: Degradation of characteristics is to be reduced. A hybrid filter of a radio frequency module includes an acoustic wave filter and a first circuit. A plurality of circuit elements of the first circuit include a plurality of inductors and a plurality of capacitors. A second input/output portion of the acoustic wave filter includes a first connection terminal, a second connection terminal, and a conductor portion. A second circuit of the first circuit is connected between the first connection terminal and a ground terminal and includes at least one circuit element. A third circuit of the first circuit is connected between the second connection terminal and a second signal terminal and includes at least one inductor among the plurality of inductors and at least one capacitor among the plurality of capacitors.

Abstract: A radio-frequency module includes a module substrate having main surfaces opposite to each other, a hybrid filter having a first acoustic wave resonator, a first inductor, and a first capacitor, a switch for connecting and disconnecting an antenna connection terminal and the hybrid filter, and a coupler disposed on a path linking the antenna connection terminal and the switch. The first acoustic wave resonator is disposed on the main surface, the switch is included in a semiconductor IC disposed on the main surface, the coupler is disposed inside the module substrate, and in plan view of the module substrate, the semiconductor IC at least partially overlaps the first acoustic wave resonator, and the semiconductor IC and the coupler at least partially overlaps.

Abstract: A radio-frequency module includes a module substrate having main surfaces opposite to each other, a hybrid filter having a first acoustic wave resonator, a first inductor, and a first capacitor, and a first radio-frequency component, wherein a pass band width of the hybrid filter is greater than a resonant band width of the first acoustic wave resonator, one of the first acoustic wave resonator, the first inductor, and the first capacitor is disposed on the main surface, and the first radio-frequency component is disposed on the main surface.

Abstract: A radio frequency circuit includes a first acoustic wave filter that is connected to a common terminal and includes a first acoustic wave resonator, a first LC filter that is connected to the common terminal via the first acoustic wave filter and includes at least one of an inductor or a capacitor, a second acoustic wave filter that is connected to the common terminal and includes a second acoustic wave resonator, and a second LC filter that is connected to the common terminal via the second acoustic wave filter and includes at least one of an inductor or a capacitor.

Abstract: An elastic wave device includes a supporting substrate, a high-acoustic-velocity film stacked on the supporting substrate and in which an acoustic velocity of a bulk wave propagating therein is higher than an acoustic velocity of an elastic wave propagating in a piezoelectric film, a low-acoustic-velocity film stacked on the high-acoustic-velocity film and in which an acoustic velocity of a bulk wave propagating therein is lower than an acoustic velocity of a bulk wave propagating in the piezoelectric film, the piezoelectric film is stacked on the low-acoustic-velocity film, and an IDT electrode stacked on a surface of the piezoelectric film.

Abstract: To suppress degradation of characteristics, a high frequency module includes a mounting substrate, a first signal terminal, a second signal terminal, and ground terminals, and a hybrid filter. The hybrid filter is coupled between the first signal terminal and the second signal terminal. The hybrid filter includes an acoustic wave filter having at least one acoustic wave resonator, a first inductor, and a capacitor. The pass band width of the hybrid filter is larger than that of the acoustic wave resonator. A resin layer is disposed on a first principal surface of the mounting substrate. The resin layer covers at least part of the acoustic wave filter. A metal electrode layer covers at least part of the resin layer, and is coupled to the ground terminals. The second inductor is coupled between the hybrid filter and the second signal terminal.

Abstract: A high-frequency module includes a mounting substrate, a filter, and a common inductor. The mounting substrate includes a first main surface and a second main surface facing each other. The filter includes series arm resonators and parallel arm resonators, and is disposed on the first main surface. The mounting substrate includes a ground terminal on the second main surface. A first end of the common inductor is connected to all of the parallel arm resonators. A second end of the common inductor is connected to the ground terminal.

Abstract: A radio frequency circuit includes a first acoustic wave filter that is connected to a common terminal and includes a first acoustic wave resonator, a first LC filter that is connected to the common terminal via the first acoustic wave filter and includes at least one of an inductor or a capacitor, a second acoustic wave filter that is connected to the common terminal and includes a second acoustic wave resonator, and a second LC filter that is connected to the common terminal via the second acoustic wave filter and includes at least one of an inductor or a capacitor.

Abstract: A radio frequency module includes a first switch, a second switch, a control circuit, a first filter, a second filter, a third filter, a fourth filter, and an antenna terminal. The first switch is capable of connecting a first selection terminal or a second selection terminal to a first common terminal in a selective manner. The second switch is capable of connecting a third selection terminal or a fourth selection terminal to a second common terminal in a selective manner. The first switch, the second switch, and the control circuit are provided in a single electronic component (a first electronic component). The control circuit is positioned between the first switch and the second switch in the electronic component.

Abstract: A radio-frequency circuit includes a first switch, a first filter, a second filter, a third filter, and a fourth filter. The first switch is capable of selectively connecting a first selection terminal or a second selection terminal to a first common terminal. The first filter and the second filter are connected to the first selection terminal. The third filter and the fourth filter are connected to the second selection terminal. The first filter and the third filter are band pass filters. The second filter is a band elimination filter. A pass band of the first filter and a rejection band of the second filter overlap each other. The pass band of the first filter and a pass band of the third filter overlap each other.

Abstract: A hybrid filter includes a module substrate having a major surface and a major surface that are opposite to each other, acoustic wave resonator elements disposed at the module substrate, inductors disposed at the module substrate, and a capacitor disposed at the module substrate. The pass band of the hybrid filter is wider than the resonance band width of the acoustic wave resonator elements. One of the acoustic wave resonator elements, the inductors, and the capacitor is a first circuit element, and the first circuit element is disposed at the major surface. Another of the acoustic wave resonator elements, the inductors, and the capacitor is a second circuit element, and the second circuit element is disposed at the major surface.

Abstract: An acoustic wave filter includes a first ladder circuit including a first series arm resonator and a first parallel arm resonator, a second ladder circuit including a second series arm resonator and a second parallel arm resonator, and a third ladder circuit including a third series arm resonator and a third parallel arm resonator. The first, second and third ladder circuits are cascade-connected in order. A condition of fas1>fas2>fas3>frp1>frp2>frp3 is satisfied, where fas1 represents an anti-resonant frequency of the first series arm resonator, fas2 represents an anti-resonant frequency of the second series arm resonator, fas3 represents an anti-resonant frequency of the third series arm resonator, frp1 represents a resonant frequency of the first parallel arm resonator, frp2 represents a resonant frequency of the second parallel arm resonator, and frp3 represents a resonant frequency of the third parallel arm resonator.

Abstract: A multiplexer includes first and second filters connected to an antenna connecting terminal. The first filter includes a first series arm resonator and a first parallel arm resonator. Each of the first series arm resonator and the first parallel arm resonator includes a bottom electrode, a top electrode, and a piezoelectric layer. At least one of resonators forming the first series arm resonator and the first parallel arm resonator is constituted by plural series-divided resonators. The second filter includes plural second series arm resonators and a second parallel arm resonator. Each of the plural second series arm resonators and the second parallel arm resonator includes a bottom electrode, a top electrode, and a piezoelectric layer. Among the plural second series arm resonators, the top electrodes or the bottom electrodes of two adjacent second series arm resonators are formed by one electrode.

Abstract: A multiplexer includes first, second, and third filters. The first filter has a first pass band including a first band to send a signal. The second filter has a second pass band including a second band to send a signal. The third filter has a third pass band including a third band. An unwanted frequency of a second-order or fourth-order distortion mode, generated when a first transmitted signal of the first band and a second transmitted signal of the second band are simultaneously transmitted, is included in at least one of the first, second, and third pass bands. An unwanted frequency of a third-order distortion mode, generated when the first transmitted signal and the second transmitted signal are simultaneously transmitted, is included in at least one of the first, second, and third pass bands. The first filter is a BAW filter. The second filter is a SAW filter.

Abstract: In a radio-frequency module, a hybrid filter includes an acoustic wave filter including at least one acoustic wave resonator, an inductor having a winding portion, and a capacitor. A plurality of outer electrodes of the acoustic wave filter includes a first input and output electrode connected to a first signal terminal, a second input and output electrode connected to a second signal terminal, and a ground electrode connected to a ground terminal. The inductor is disposed on a first major surface of a mounting substrate and is adjacent to the acoustic wave filter in plan view in a thickness direction of the mounting substrate. When viewed in a direction of a winding axis of the winding portion of the inductor, an inner part of the winding portion in the inductor does not overlap any of the first input and output electrode, the second input and output electrode, and ground electrode.

Abstract: A filter circuit that secures the steepness from a pass range to an attenuation range while maintaining a wide-band transmission characteristic and a filter device including this filter circuit are formed. A filter circuit includes a first filter and a second filter. The first filter is a filter including an LC circuit in which a first frequency band is a pass band and a frequency band not higher than the first frequency band is an attenuation band. The second filter is a filter that attenuates a second frequency band within the first frequency band by using an attenuation pole produced by a resonance or an antiresonance of an acoustic wave resonator. Further, the first filter is placed closer to an antenna terminal than the second filter.

Abstract: An elastic wave device includes a supporting substrate, a high-acoustic-velocity film stacked on the supporting substrate and in which an acoustic velocity of a bulk wave propagating therein is higher than an acoustic velocity of an elastic wave propagating in a piezoelectric film, a low-acoustic-velocity film stacked on the high-acoustic-velocity film and in which an acoustic velocity of a bulk wave propagating therein is lower than an acoustic velocity of a bulk wave propagating in the piezoelectric film, the piezoelectric film is stacked on the low-acoustic-velocity film, and an IDT electrode stacked on a surface of the piezoelectric film.