Abstract: An acoustic wave device includes a piezoelectric layer that is made of lithium niobate or lithium tantalate, and a plurality of pairs of electrodes opposed to each other in a direction intersecting with a thickness direction of the piezoelectric layer, in which a bulk wave in a thickness shear primary mode is used or d/p is about 0.5 or lower when a thickness of the piezoelectric layer is d and a distance between centers of mutually adjacent electrodes among the plurality of pairs of electrodes is p. The plurality of pairs of electrodes include at least one pair of first electrodes of a first acoustic wave resonator and at least one pair of second electrodes of a second acoustic wave resonator. A direction orthogonal to a longitudinal direction of the second electrodes in the second acoustic wave resonator is inclined at an angle that is greater than 0° and smaller than 360° with respect to a direction orthogonal to a longitudinal direction of the first electrodes in the first acoustic wave resonator.

Abstract: A filter includes a first input/output electrode and the second input/output electrode, and is arranged on a first main surface of a mounting substrate. The mounting substrate includes a first land electrode, a second land electrode, a ground terminal, and a plurality of via conductors. The first land electrode is connected to the first input/output electrode. The second land electrode is connected to the second input/output electrode. The ground terminal is located closer to a second main surface side than the first main surface in a thickness direction of the mounting substrate. The plurality of via conductors is arranged between the first main surface and the second main surface, and is connected to the ground terminal. The plurality of via conductors is located between the first land electrode and the second land electrode in a plan view from the thickness direction of the mounting substrate.

Abstract: An elastic wave device includes a supporting substrate, a high-acoustic-velocity film stacked on the supporting substrate and in which an acoustic velocity of a bulk wave propagating therein is higher than an acoustic velocity of an elastic wave propagating in a piezoelectric film, a low-acoustic-velocity film stacked on the high-acoustic-velocity film and in which an acoustic velocity of a bulk wave propagating therein is lower than an acoustic velocity of a bulk wave propagating in the piezoelectric film, the piezoelectric film is stacked on the low-acoustic-velocity film, and an IDT electrode stacked on a surface of the piezoelectric film.

Abstract: An acoustic wave device includes a substrate, a first resonator, a second resonator, and a shared reflector. The second resonator is adjacent to the first resonator and has different frequency characteristics different than the first resonator. The first resonator includes a first interdigital transducer electrode. The second resonator includes a second interdigital transducer electrode. The shared reflector has frequency characteristics that are the same as both frequency characteristics of the first resonator and frequency characteristics of the second resonator or between the frequency characteristics of the first resonator and the frequency characteristics of the second resonator. a higher-order mode frequency of the first resonator and a higher-order mode frequency of the second resonator coincides.

Abstract: A multiplexer includes filters and low pass filters. A second frequency band and a third frequency band are partially different. A first frequency band does not overlap the second frequency band and the third frequency band. One end of the filter is connected to a common terminal and the other end is connected to an input/output terminal. The low pass filter is connected in one end to the common terminal and in the other end to one end of the filter. The other end of the filter is connected to one end of the low pass filter. The other end of the low pass filter is connected to the input/output terminal. One end of the filter is connected to a node between the other end of the low pass filter and one end of the filter and the other end of the filter is connected to the input/output terminal.

Abstract: A radio frequency circuit includes a first acoustic wave filter that is connected to a common terminal and includes a first acoustic wave resonator, a first LC filter that is connected to the common terminal via the first acoustic wave filter and includes at least one of an inductor or a capacitor, a second acoustic wave filter that is connected to the common terminal and includes a second acoustic wave resonator, and a second LC filter that is connected to the common terminal via the second acoustic wave filter and includes at least one of an inductor or a capacitor.

Abstract: A radio-frequency module includes a transmission path which has one end connected to a transmission terminal and on which a transmission signal in Band A is transmitted; a reception path (62) which has one end connected to a reception terminal (120B) and on which a reception signal in Band B is transmitted; a reception path (63) which has one end connected to a reception terminal (120C) and on which a reception signal in Band C is transmitted; a switch (11) having a common terminal (11a) and selection terminals (11b and 11c); and a switch (12) having a common terminal (12a) and selection terminals (12b and 12c).

Abstract: A radio frequency circuit includes a first acoustic wave filter that is connected to a common terminal and includes a first acoustic wave resonator, a first LC filter that is connected to the common terminal via the first acoustic wave filter and includes at least one of an inductor or a capacitor, a second acoustic wave filter that is connected to the common terminal and includes a second acoustic wave resonator, and a second LC filter that is connected to the common terminal via the second acoustic wave filter and includes at least one of an inductor or a capacitor.

Abstract: A filter device having a pass band and a stop band on a lower frequency side than the pass band includes a filter having a pass band including the pass band, a series arm resonator connected in series to the filter, a first inductor directly connected in series to the series arm resonator, and a parallel arm resonator connected between a node on a path connecting the filter and the series arm resonator and the ground. The parallel arm resonator constitutes a resonance circuit having a resonant frequency at which an attenuation pole corresponding to a high frequency end of the first stop band, and the series arm resonator and the inductor constitute a resonance circuit having an anti-resonant frequency on a lower frequency side than the pass band and having a sub-resonant frequency higher than a resonant frequency of the resonance circuit.

Abstract: A filter device having a pass band and a stop band on a lower frequency side than the pass band includes a filter having a pass band including the pass band, a series arm resonator connected in series to the filter, a first inductor directly connected in series to the series arm resonator, and a parallel arm resonator connected between a node on a path connecting the filter and the series arm resonator and the ground. The parallel arm resonator constitutes a resonance circuit having a resonant frequency at which an attenuation pole corresponding to a high frequency end of the first stop band, and the series arm resonator and the inductor constitute a resonance circuit having an anti-resonant frequency on a lower frequency side than the pass band and having a sub-resonant frequency higher than a resonant frequency of the resonance circuit.

Abstract: A high frequency filter includes series arm resonators and parallel arm resonators as acoustic wave resonators and at least one inductor, wherein capacitive components of the acoustic wave resonators constitute an LPF and an HPF as hybrid filters with an inductor or with an inductor and a capacitor, and the at least one inductor includes inductors as mount component inductors.

Abstract: An acoustic wave device includes an interdigital transducer electrode provided on a piezoelectric substrate, the interdigital transducer electrode includes first and second electrode fingers. The second electrode fingers are connected to an electric potential different from that of the first electrode fingers. A direction orthogonal or substantially orthogonal to a direction in which the first electrode fingers and the second electrode fingers extend is an acoustic wave propagation direction, the interdigital transducer electrode includes a first area centrally provided in the acoustic wave propagation direction, second areas provided on one side and another side of the first area in the acoustic wave propagation direction, and third areas each provided on a side of each of the second areas opposite to the first area in the acoustic wave propagation direction.

Abstract: A radio-frequency module includes a transmission path which has one end connected to a transmission terminal and on which a transmission signal in Band A is transmitted; a reception path (62) which has one end connected to a reception terminal (120B) and on which a reception signal in Band B is transmitted; a reception path (63) which has one end connected to a reception terminal (120C) and on which a reception signal in Band C is transmitted; a switch (11) having a common terminal (11a) and selection terminals (11b and 11c); and a switch (12) having a common terminal (12a) and selection terminals (12b and 12c).

Abstract: A radio-frequency circuit includes a first switch which includes a common terminal, a first selection terminal, and a second selection terminal, and switches between connecting the common terminal and the first selection terminal and connecting the common terminal and the second selection terminal; a first low-noise amplifier including an input terminal connected to the first selection terminal, and a second low-noise amplifier including an input terminal connected to the second selection terminal. The frequency band in which the first low-noise amplifier amplifies a radio-frequency signal by at least a predetermined gain includes the frequency band in which the second low-noise amplifier amplifies a radio-frequency signal by at least a predetermined gain.

Abstract: A filter includes a first input/output electrode and the second input/output electrode, and is arranged on a first main surface of a mounting substrate. The mounting substrate includes a first land electrode, a second land electrode, a ground terminal, and a plurality of via conductors. The first land electrode is connected to the first input/output electrode. The second land electrode is connected to the second input/output electrode. The ground terminal is located closer to a second main surface side than the first main surface in a thickness direction of the mounting substrate. The plurality of via conductors is arranged between the first main surface and the second main surface, and is connected to the ground terminal. The plurality of via conductors is located between the first land electrode and the second land electrode in a plan view from the thickness direction of the mounting substrate.

Abstract: A high-frequency module includes a mounting substrate, a filter, and a common inductor. The mounting substrate includes a first main surface and a second main surface facing each other. The filter includes series arm resonators and parallel arm resonators, and is disposed on the first main surface. The mounting substrate includes a ground terminal on the second main surface. A first end of the common inductor is connected to all of the parallel arm resonators. A second end of the common inductor is connected to the ground terminal.

Abstract: A high frequency filter includes series arm resonators and parallel arm resonators as acoustic wave resonators and at least one inductor, wherein capacitive components of the acoustic wave resonators constitute an LPF and an HPF as hybrid filters with an inductor or with an inductor and a capacitor, and the at least one inductor includes inductors as mount component inductors.

Abstract: A radio frequency circuit includes a first acoustic wave filter that is connected to a common terminal and includes a first acoustic wave resonator, a first LC filter that is connected to the common terminal via the first acoustic wave filter and includes at least one of an inductor or a capacitor, a second acoustic wave filter that is connected to the common terminal and includes a second acoustic wave resonator, and a second LC filter that is connected to the common terminal via the second acoustic wave filter and includes at least one of an inductor or a capacitor.

Abstract: A radio-frequency circuit includes a first switch which includes a common terminal, a first selection terminal, and a second selection terminal, and switches between connecting the common terminal and the first selection terminal and connecting the common terminal and the second selection terminal; a first low-noise amplifier including an input terminal connected to the first selection terminal, and a second low-noise amplifier including an input terminal connected to the second selection terminal. The frequency band in which the first low-noise amplifier amplifies a radio-frequency signal by at least a predetermined gain includes the frequency band in which the second low-noise amplifier amplifies a radio-frequency signal by at least a predetermined gain.

Abstract: A hybrid multiplexer includes a filter configured to allow a high-frequency signal of an HB to pass therethrough, and a filter configured to allow a high-frequency signal of an MB to pass therethrough, in which the filter includes a matching circuit, a first resonance circuit defined by one of an LPF and an HPF, and a second resonance circuit defined by the other of the LPF and the HPF, the LPF includes an inductor and a parallel arm resonator, the HPF includes a serial arm resonator and an inductor, and a resonant frequency of the parallel arm resonator and an anti-resonant frequency of the serial arm resonator are both located between a frequency at a low-band end of the HB and a frequency at a high-band end of the HB.