Abstract: An elastic wave device includes a support layer with a through-hole or a recess opened at an upper surface thereof, a piezoelectric thin film arranged on the support layer to extend above the recess or the through-hole of the support layer, and an IDT electrode defined on at least one of upper and lower surfaces of the piezoelectric thin film in a region of the piezoelectric thin film, the region extending above the recess, or the through-hole. A secondary mode of a plate wave, which contains a U1 component as a main component, is utilized. The piezoelectric thin film is made of LiTaO3, and Euler angles (?, ?, ?) of the LiTaO3 fall within specific ranges.

Abstract: A filter component with a passive element includes a filter substrate, an elastic wave filter including an elastic wave resonator in a predetermined region of one main surface of the filter substrate, and a support substrate on another main surface of the filter substrate, wherein a passive element is provided in or on a support substrate, the passive element includes a wiring electrode and is electrically connected to the elastic wave filter.

Abstract: An elastic wave device includes a high acoustic velocity film configured such that a bulk wave propagates at a higher acoustic velocity than an elastic wave that propagates in a piezoelectric film, a low acoustic velocity film configured such that a bulk wave propagates at a lower acoustic velocity than a bulk wave that propagates in the piezoelectric film is laminated on the high acoustic velocity film, the piezoelectric film is laminated on the low acoustic velocity film, and an IDT electrode is laminated on one surface of the piezoelectric film. In an upper structure section, an energy concentration ratio of a main mode which is an elastic wave is not less than about 99.9% and an energy concentration ratio of a high order mode which is spurious is not more than about 99.5%.

Abstract: A SAW filter device defines a filter including a high acoustic velocity member, a low acoustic velocity film, a piezoelectric film, and an IDT electrode are stacked in this order. A comb capacitive electrode electrically coupled to the filter is provided on the piezoelectric film. Where ?c is a wavelength determined by an electrode finger pitch of the comb capacitive electrode, and, among modes of an elastic wave generated by the comb capacitive electrode, VC-(P+SV) is an acoustic velocity of a P+SV wave, VC-SH is an acoustic velocity of a SH wave, and VC-HO is an acoustic velocity of, out of higher-order modes of a SH wave, a higher-order mode at the lowest frequency side, VC-(P+SV)<VC-SH<VC-HO.

Abstract: An elastic wave device includes a supporting substrate, a high-acoustic-velocity film stacked on the supporting substrate and in which an acoustic velocity of a bulk wave propagating therein is higher than an acoustic velocity of an elastic wave propagating in a piezoelectric film, a low-acoustic-velocity film stacked on the high-acoustic-velocity film and in which an acoustic velocity of a bulk wave propagating therein is lower than an acoustic velocity of a bulk wave propagating in the piezoelectric film, the piezoelectric film is stacked on the low-acoustic-velocity film, and an IDT electrode stacked on a surface of the piezoelectric film.

Abstract: A method for manufacturing an elastic wave device includes a step of preparing a supporting substrate, a step of forming a high-acoustic-velocity film on the supporting substrate and in which an acoustic velocity of a bulk wave propagating therein is higher than an acoustic velocity of an elastic wave propagating in a piezoelectric film, a step of forming a low-acoustic-velocity film on the high-acoustic-velocity film and in which an acoustic velocity of a bulk wave propagating therein is lower than an acoustic velocity of a bulk wave propagating in the piezoelectric film, a step of forming the piezoelectric film on the low-acoustic-velocity film, and a step of forming an IDT electrode on a surface of the piezoelectric film.

Abstract: An elastic wave device includes IDT electrodes stacked on a piezoelectric thin film. The IDT electrode includes a plurality of first electrode fingers and a plurality of second electrode fingers. A line connecting the distal ends of the first electrode fingers or the distal ends of the second electrode fingers extends obliquely with respect to a propagation direction of an elastic wave at an oblique angle ?. The oblique angle ? is about 0.4° or more and about 10° or less.

Abstract: An elastic wave device includes a supporting substrate, a high-acoustic-velocity film stacked on the supporting substrate and in which an acoustic velocity of a bulk wave propagating therein is higher than an acoustic velocity of an elastic wave propagating in a piezoelectric film, a low-acoustic-velocity film stacked on the high-acoustic-velocity film and in which an acoustic velocity of a bulk wave propagating therein is lower than an acoustic velocity of a bulk wave propagating in the piezoelectric film, the piezoelectric film is stacked on the low-acoustic-velocity film, and an IDT electrode stacked on a surface of the piezoelectric film.

Abstract: An elastic wave device includes a high acoustic velocity film configured such that a bulk wave propagates at a higher acoustic velocity than an elastic wave that propagates in a piezoelectric film, a low acoustic velocity film configured such that a bulk wave propagates at a lower acoustic velocity than a bulk wave that propagates in the piezoelectric film is laminated on the high acoustic velocity film, the piezoelectric film is laminated on the low acoustic velocity film, and an IDT electrode is laminated on one surface of the piezoelectric film. In an upper structure section, an energy concentration ratio of a main mode which is an elastic wave is not less than about 99.9% and an energy concentration ratio of a high order mode which is spurious is not more than about 99.5%.

Abstract: An elastic wave device includes a supporting substrate, a high-acoustic-velocity film stacked on the supporting substrate and in which an acoustic velocity of a bulk wave propagating therein is higher than an acoustic velocity of an elastic wave propagating in a piezoelectric film, a low-acoustic-velocity film stacked on the high-acoustic-velocity film and in which an acoustic velocity of a bulk wave propagating therein is lower than an acoustic velocity of a bulk wave propagating in the piezoelectric film, the piezoelectric film is stacked on the low-acoustic-velocity film, and an IDT electrode stacked on a surface of the piezoelectric film.

Abstract: An elastic wave device includes a support layer with a through-hole or a recess opened at an upper surface thereof, a piezoelectric thin film arranged on the support layer to extend above the recess or the through-hole of the support layer, and an IDT electrode defined on at least one of upper and lower surfaces of the piezoelectric thin film in a region of the piezoelectric thin film, the region extending above the recess, or the through-hole. A secondary mode of a plate wave, which contains a U1 component as a main component, is utilized. The piezoelectric thin film is made of LiTaO3, and Euler angles (?, ?, ?) of the LiTaO3 fall within specific ranges.

Abstract: An elastic wave device includes a supporting substrate, a high-acoustic-velocity film stacked on the supporting substrate and in which an acoustic velocity of a bulk wave propagating therein is higher than an acoustic velocity of an elastic wave propagating in a piezoelectric film, a low-acoustic-velocity film stacked on the high-acoustic-velocity film and in which an acoustic velocity of a bulk wave propagating therein is lower than an acoustic velocity of a bulk wave propagating in the piezoelectric film, the piezoelectric film is stacked on the low-acoustic-velocity film, and an IDT electrode stacked on a surface of the piezoelectric film.