Patents by Inventor Szu-An Wu

Szu-An Wu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11018176
    Abstract: A device includes a semiconductor substrate having a front side and a backside. A photo-sensitive device is disposed at a surface of the semiconductor substrate, wherein the photo-sensitive device is configured to receive a light signal from the backside of the semiconductor substrate, and convert the light signal to an electrical signal. An amorphous-like adhesion layer is disposed on the backside of the semiconductor substrate. The amorphous-like adhesion layer includes a compound of nitrogen and a metal. A metal shielding layer is disposed on the backside of the semiconductor substrate and contacting the amorphous-like adhesion layer.
    Type: Grant
    Filed: April 29, 2019
    Date of Patent: May 25, 2021
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Shih-Chieh Chang, Jian-Shin Tsai, Chih-Chang Huang, Ing-Ju Lee, Ching-Yao Sun, Jyun-Ru Wu, Ching-Che Huang, Szu-An Wu, Ying-Lang Wang
  • Publication number: 20190252427
    Abstract: A device includes a semiconductor substrate having a front side and a backside. A photo-sensitive device is disposed at a surface of the semiconductor substrate, wherein the photo-sensitive device is configured to receive a light signal from the backside of the semiconductor substrate, and convert the light signal to an electrical signal. An amorphous-like adhesion layer is disposed on the backside of the semiconductor substrate. The amorphous-like adhesion layer includes a compound of nitrogen and a metal. A metal shielding layer is disposed on the backside of the semiconductor substrate and contacting the amorphous-like adhesion layer.
    Type: Application
    Filed: April 29, 2019
    Publication date: August 15, 2019
    Inventors: Shih-Chieh Chang, Jian-Shin Tsai, Chih-Chang Huang, Ing-Ju Lee, Ching-Yao Sun, Jyun-Ru Wu, Ching-Che Huang, Szu-An Wu, Ying-Lang Wang
  • Patent number: 10276621
    Abstract: A device includes a semiconductor substrate having a front side and a backside. A photo-sensitive device is disposed at a surface of the semiconductor substrate, wherein the photo-sensitive device is configured to receive a light signal from the backside of the semiconductor substrate, and convert the light signal to an electrical signal. An amorphous-like adhesion layer is disposed on the backside of the semiconductor substrate. The amorphous-like adhesion layer includes a compound of nitrogen and a metal. A metal shielding layer is disposed on the backside of the semiconductor substrate and contacting the amorphous-like adhesion layer.
    Type: Grant
    Filed: April 10, 2017
    Date of Patent: April 30, 2019
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Shih-Chieh Chang, Jian-Shin Tsai, Chih-Chang Huang, Ing-Ju Lee, Ching-Yao Sun, Jyun-Ru Wu, Ching-Che Huang, Szu-An Wu, Ying-Lang Wang
  • Patent number: 9978784
    Abstract: A device includes a semiconductor substrate, which has a front side and a backside. A photo-sensitive device is disposed on the front side of the semiconductor substrate. A first and a second grid line are parallel to each other, and are disposed on the backside of, and overlying, the semiconductor substrate. A stacked layer includes an adhesion layer, a metal layer over the adhesion layer, and a high-refractive index layer over the metal layer. The adhesion layer, the metal layer, and the high-refractive index layer are substantially conformal, and extend on top surfaces and sidewalls of the first and the second grid lines.
    Type: Grant
    Filed: December 21, 2015
    Date of Patent: May 22, 2018
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Shiu-Ko JangJian, Szu-An Wu, Sheng-Wen Chen
  • Patent number: 9786707
    Abstract: Image sensors comprising an isolation region according to embodiments are disclosed, as well as methods of forming the image sensors with isolation region. An embodiment is a structure comprising a semiconductor substrate, a photo element in the semiconductor substrate, and an isolation region in the semiconductor substrate. The isolation region is proximate the photo element and comprises a dielectric material and an epitaxial region. The epitaxial region is disposed between the semiconductor substrate and the dielectric material.
    Type: Grant
    Filed: May 22, 2013
    Date of Patent: October 10, 2017
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Shiu-Ko JangJian, Min Hao Hong, Kei-Wei Chen, Szu-An Wu
  • Publication number: 20170213861
    Abstract: A device includes a semiconductor substrate having a front side and a backside. A photo-sensitive device is disposed at a surface of the semiconductor substrate, wherein the photo-sensitive device is configured to receive a light signal from the backside of the semiconductor substrate, and convert the light signal to an electrical signal. An amorphous-like adhesion layer is disposed on the backside of the semiconductor substrate. The amorphous-like adhesion layer includes a compound of nitrogen and a metal. A metal shielding layer is disposed on the backside of the semiconductor substrate and contacting the amorphous-like adhesion layer.
    Type: Application
    Filed: April 10, 2017
    Publication date: July 27, 2017
    Inventors: Shih-Chieh Chang, Jian-Shin Tsai, Chih-Chang Huang, Ing-Ju Lee, Ching-Yao Sun, Jyun-Ru Wu, Ching-Che Huang, Szu-An Wu, Ying-Lang Wang
  • Patent number: 9673244
    Abstract: Image sensors comprising an isolation region according to embodiments are disclosed, as well as methods of forming the image sensors with isolation region. An embodiment is a structure comprising a semiconductor substrate, a photo element in the semiconductor substrate, and an isolation region in the semiconductor substrate. The isolation region is proximate the photo element and comprises a dielectric material and an epitaxial region. The epitaxial region is disposed between the semiconductor substrate and the dielectric material.
    Type: Grant
    Filed: March 8, 2012
    Date of Patent: June 6, 2017
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Shiu-Ko JangJian, Min Hao Hong, Kei-Wei Chen, Szu-An Wu
  • Patent number: 9620555
    Abstract: A device includes a semiconductor substrate having a front side and a backside. A photo-sensitive device is disposed at a surface of the semiconductor substrate, wherein the photo-sensitive device is configured to receive a light signal from the backside of the semiconductor substrate, and convert the light signal to an electrical signal. An amorphous-like adhesion layer is disposed on the backside of the semiconductor substrate. The amorphous-like adhesion layer includes a compound of nitrogen and a metal. A metal shielding layer is disposed on the backside of the semiconductor substrate and contacting the amorphous-like adhesion layer.
    Type: Grant
    Filed: December 28, 2015
    Date of Patent: April 11, 2017
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Shih-Chieh Chang, Jian-Shin Tsai, Chih-Chang Huang, Ing-Ju Lee, Ching-Yao Sun, Jyun-Ru Wu, Ching-Che Huang, Szu-An Wu, Ying-Lang Wang
  • Patent number: 9543234
    Abstract: A method includes forming an opening in a dielectric layer, and forming a silicon rich layer on a surface of the dielectric layer. A portion of the silicon rich layer extends into the opening and contacts the dielectric layer. A tantalum-containing layer is formed over and the contacting the silicon rich layer. An annealing is performed to react the tantalum-containing layer with the silicon rich layer, so that a tantalum-and-silicon containing layer is formed.
    Type: Grant
    Filed: December 30, 2014
    Date of Patent: January 10, 2017
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Shiu-Ko JangJian, Szu-An Wu, Ting-Chun Wang
  • Patent number: 9502290
    Abstract: A method of forming an integrated circuit structure includes providing a substrate; forming a metal feature over the substrate; forming a dielectric layer over the metal feature; and forming an opening in the dielectric layer. At least a portion of the metal feature is exposed through the opening. An oxide layer is accordingly formed on an exposed portion of the metal feature. The method further includes, in a production tool having a vacuum environment, performing a plasma process to remove the oxide layer. Between the step of forming the opening and the oxide-removal process, no additional oxide-removal process is performed to the metal feature outside the production tool. The method further includes, in the production tool, forming a diffusion barrier layer in the opening, and forming a seed layer on the diffusion barrier layer.
    Type: Grant
    Filed: June 7, 2013
    Date of Patent: November 22, 2016
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Yu-Sheng Wang, Shih-Ho Lin, Kei-Wei Chen, Szu-An Wu, Ying-Lang Wang
  • Publication number: 20160118434
    Abstract: A device includes a semiconductor substrate having a front side and a backside. A photo-sensitive device is disposed at a surface of the semiconductor substrate, wherein the photo-sensitive device is configured to receive a light signal from the backside of the semiconductor substrate, and convert the light signal to an electrical signal. An amorphous-like adhesion layer is disposed on the backside of the semiconductor substrate. The amorphous-like adhesion layer includes a compound of nitrogen and a metal. A metal shielding layer is disposed on the backside of the semiconductor substrate and contacting the amorphous-like adhesion layer.
    Type: Application
    Filed: December 28, 2015
    Publication date: April 28, 2016
    Inventors: Shih-Chieh Chang, Jian-Shin Tsai, Chih-Chang Huang, Ing-Ju Lee, Ching-Yao Sun, Jyun-Ru Wu, Ching-Che Huang, Szu-An Wu, Ying-Lang Wang
  • Publication number: 20160111458
    Abstract: A device includes a semiconductor substrate, which has a front side and a backside. A photo-sensitive device is disposed on the front side of the semiconductor substrate. A first and a second grid line are parallel to each other, and are disposed on the backside of, and overlying, the semiconductor substrate. A stacked layer includes an adhesion layer, a metal layer over the adhesion layer, and a high-refractive index layer over the metal layer. The adhesion layer, the metal layer, and the high-refractive index layer are substantially conformal, and extend on top surfaces and sidewalls of the first and the second grid lines.
    Type: Application
    Filed: December 21, 2015
    Publication date: April 21, 2016
    Inventors: Shiu-Ko JangJian, Szu-An Wu, Sheng-Wen Chen
  • Patent number: 9224773
    Abstract: A device includes a semiconductor substrate having a front side and a backside. A photo-sensitive device is disposed at a surface of the semiconductor substrate, wherein the photo-sensitive device is configured to receive a light signal from the backside of the semiconductor substrate, and convert the light signal to an electrical signal. An amorphous-like adhesion layer is disposed on the backside of the semiconductor substrate. The amorphous-like adhesion layer includes a compound of nitrogen and a metal. A metal shielding layer is disposed on the backside of the semiconductor substrate and contacting the amorphous-like adhesion layer.
    Type: Grant
    Filed: March 14, 2012
    Date of Patent: December 29, 2015
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Shih-Chieh Chang, Jian-Shin Tsai, Chih-Chang Huang, Ing-Ju Lee, Ching-Yao Sun, Jyun-Ru Wu, Ching-Che Huang, Szu-An Wu, Ying-Lang Wang
  • Patent number: 9219092
    Abstract: A device includes a semiconductor substrate, which has a front side and a backside. A photo-sensitive device is disposed on the front side of the semiconductor substrate. A first and a second grid line are parallel to each other, and are disposed on the backside of, and overlying, the semiconductor substrate. A stacked layer includes an adhesion layer, a metal layer over the adhesion layer, and a high-refractive index layer over the metal layer. The adhesion layer, the metal layer, and the high-refractive index layer are substantially conformal, and extend on top surfaces and sidewalls of the first and the second grid lines.
    Type: Grant
    Filed: February 14, 2012
    Date of Patent: December 22, 2015
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Shiu-Ko JangJian, Szu-An Wu, Sheng-Wen Chen
  • Patent number: 9123608
    Abstract: A backside illuminated CMOS image sensor comprises a photo active region formed over a substrate using a front side ion implantation process and an extended photo active region formed adjacent to the photo active region, wherein the extended photo active region is formed by using a backside ion implantation process. The backside illuminated CMOS image sensor may further comprise a laser annealed layer on the backside of the substrate. The extended photo active region helps to increase the number of photons converted into electrons so as to improve quantum efficiency.
    Type: Grant
    Filed: March 9, 2012
    Date of Patent: September 1, 2015
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Shiu-Ko JangJian, Volume Chien, Szu-An Wu
  • Publication number: 20150115450
    Abstract: A method includes forming an opening in a dielectric layer, and forming a silicon rich layer on a surface of the dielectric layer. A portion of the silicon rich layer extends into the opening and contacts the dielectric layer. A tantalum-containing layer is formed over and the contacting the silicon rich layer. An annealing is performed to react the tantalum-containing layer with the silicon rich layer, so that a tantalum-and-silicon containing layer is formed.
    Type: Application
    Filed: December 30, 2014
    Publication date: April 30, 2015
    Inventors: Shiu-Ko JangJian, Szu-An Wu, Ting-Chun Wang
  • Patent number: 8946083
    Abstract: A method includes forming an opening in a dielectric layer, and forming a silicon rich layer on a surface of the dielectric layer. A portion of the silicon rich layer extends into the opening and contacts the dielectric layer. A tantalum-containing layer is formed over and the contacting the silicon rich layer. An annealing is performed to react the tantalum-containing layer with the silicon rich layer, so that a tantalum-and-silicon containing layer is formed.
    Type: Grant
    Filed: June 24, 2011
    Date of Patent: February 3, 2015
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Shiu-Ko JangJian, Ting-Chun Wang, Szu-An Wu
  • Patent number: 8847286
    Abstract: An image sensor includes a substrate having opposite first and second sides, a multilayer structure on the first side of the substrate, and a photo-sensitive element on the second side of the substrate. The photo-sensitive element is configured to receive light that is incident upon the first side and transmitted through the multilayer structure and the substrate. The multilayer structure includes first and second light transmitting layers. The first light transmitting layer is sandwiched between the substrate and the second light transmitting layer. The first light transmitting layer has a refractive index that is from 60% to 90% of a refractive index of the substrate. The second light transmitting layer has a refractive index that is lower than the refractive index of the first light transmitting layer and is from 40% to 70% of the refractive index of the substrate.
    Type: Grant
    Filed: January 12, 2012
    Date of Patent: September 30, 2014
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Shiu-Ko Jangjian, Kei-Wei Chen, Szu-An Wu, Ying-Lang Wang
  • Patent number: 8778602
    Abstract: A method of lithography patterning includes coating a resist layer on a substrate; performing an exposing process to the resist layer using a lithography tool with a numerical aperture tuned between about 0.5 and about 0.6; baking the resist layer; thereafter performing a first developing process to the resist layer for a first period of time; and performing a second developing process to the resist layer for a second period of time.
    Type: Grant
    Filed: September 18, 2009
    Date of Patent: July 15, 2014
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Hung-Ting Pan, Jing-Huan Chen, Wei-Chung Ma, Hsin-Chun Chiang, Po-Chung Cheng, Szu-An Wu
  • Publication number: 20130280849
    Abstract: Image sensors comprising an isolation region according to embodiments are disclosed, as well as methods of forming the image sensors with isolation region. An embodiment is a structure comprising a semiconductor substrate, a photo element in the semiconductor substrate, and an isolation region in the semiconductor substrate. The isolation region is proximate the photo element and comprises a dielectric material and an epitaxial region. The epitaxial region is disposed between the semiconductor substrate and the dielectric material.
    Type: Application
    Filed: May 22, 2013
    Publication date: October 24, 2013
    Inventors: Shiu-Ko JangJian, Min Hao Hong, Kei-Wei Chen, Szu-An Wu