Abstract: A method includes forming an opening in a dielectric layer, and forming a silicon rich layer on a surface of the dielectric layer. A portion of the silicon rich layer extends into the opening and contacts the dielectric layer. A tantalum-containing layer is formed over and the contacting the silicon rich layer. An annealing is performed to react the tantalum-containing layer with the silicon rich layer, so that a tantalum-and-silicon containing layer is formed.

Abstract: A method of forming an integrated circuit structure includes providing a substrate; forming a metal feature over the substrate; forming a dielectric layer over the metal feature; and forming an opening in the dielectric layer. At least a portion of the metal feature is exposed through the opening. An oxide layer is accordingly formed on an exposed portion of the metal feature. The method further includes, in a production tool having a vacuum environment, performing a plasma process to remove the oxide layer. Between the step of forming the opening and the oxide-removal process, no additional oxide-removal process is performed to the metal feature outside the production tool. The method further includes, in the production tool, forming a diffusion barrier layer in the opening, and forming a seed layer on the diffusion barrier layer.

Abstract: A device includes a semiconductor substrate having a front side and a backside. A photo-sensitive device is disposed at a surface of the semiconductor substrate, wherein the photo-sensitive device is configured to receive a light signal from the backside of the semiconductor substrate, and convert the light signal to an electrical signal. An amorphous-like adhesion layer is disposed on the backside of the semiconductor substrate. The amorphous-like adhesion layer includes a compound of nitrogen and a metal. A metal shielding layer is disposed on the backside of the semiconductor substrate and contacting the amorphous-like adhesion layer.

Abstract: A device includes a semiconductor substrate, which has a front side and a backside. A photo-sensitive device is disposed on the front side of the semiconductor substrate. A first and a second grid line are parallel to each other, and are disposed on the backside of, and overlying, the semiconductor substrate. A stacked layer includes an adhesion layer, a metal layer over the adhesion layer, and a high-refractive index layer over the metal layer. The adhesion layer, the metal layer, and the high-refractive index layer are substantially conformal, and extend on top surfaces and sidewalls of the first and the second grid lines.

Abstract: A device includes a semiconductor substrate having a front side and a backside. A photo-sensitive device is disposed at a surface of the semiconductor substrate, wherein the photo-sensitive device is configured to receive a light signal from the backside of the semiconductor substrate, and convert the light signal to an electrical signal. An amorphous-like adhesion layer is disposed on the backside of the semiconductor substrate. The amorphous-like adhesion layer includes a compound of nitrogen and a metal. A metal shielding layer is disposed on the backside of the semiconductor substrate and contacting the amorphous-like adhesion layer.

Abstract: A device includes a semiconductor substrate, which has a front side and a backside. A photo-sensitive device is disposed on the front side of the semiconductor substrate. A first and a second grid line are parallel to each other, and are disposed on the backside of, and overlying, the semiconductor substrate. A stacked layer includes an adhesion layer, a metal layer over the adhesion layer, and a high-refractive index layer over the metal layer. The adhesion layer, the metal layer, and the high-refractive index layer are substantially conformal, and extend on top surfaces and sidewalls of the first and the second grid lines.

Abstract: A backside illuminated CMOS image sensor comprises a photo active region formed over a substrate using a front side ion implantation process and an extended photo active region formed adjacent to the photo active region, wherein the extended photo active region is formed by using a backside ion implantation process. The backside illuminated CMOS image sensor may further comprise a laser annealed layer on the backside of the substrate. The extended photo active region helps to increase the number of photons converted into electrons so as to improve quantum efficiency.

Abstract: A method includes forming an opening in a dielectric layer, and forming a silicon rich layer on a surface of the dielectric layer. A portion of the silicon rich layer extends into the opening and contacts the dielectric layer. A tantalum-containing layer is formed over and the contacting the silicon rich layer. An annealing is performed to react the tantalum-containing layer with the silicon rich layer, so that a tantalum-and-silicon containing layer is formed.

Abstract: A method includes forming an opening in a dielectric layer, and forming a silicon rich layer on a surface of the dielectric layer. A portion of the silicon rich layer extends into the opening and contacts the dielectric layer. A tantalum-containing layer is formed over and the contacting the silicon rich layer. An annealing is performed to react the tantalum-containing layer with the silicon rich layer, so that a tantalum-and-silicon containing layer is formed.

Abstract: An image sensor includes a substrate having opposite first and second sides, a multilayer structure on the first side of the substrate, and a photo-sensitive element on the second side of the substrate. The photo-sensitive element is configured to receive light that is incident upon the first side and transmitted through the multilayer structure and the substrate. The multilayer structure includes first and second light transmitting layers. The first light transmitting layer is sandwiched between the substrate and the second light transmitting layer. The first light transmitting layer has a refractive index that is from 60% to 90% of a refractive index of the substrate. The second light transmitting layer has a refractive index that is lower than the refractive index of the first light transmitting layer and is from 40% to 70% of the refractive index of the substrate.

Abstract: A method of lithography patterning includes coating a resist layer on a substrate; performing an exposing process to the resist layer using a lithography tool with a numerical aperture tuned between about 0.5 and about 0.6; baking the resist layer; thereafter performing a first developing process to the resist layer for a first period of time; and performing a second developing process to the resist layer for a second period of time.

Abstract: Image sensors comprising an isolation region according to embodiments are disclosed, as well as methods of forming the image sensors with isolation region. An embodiment is a structure comprising a semiconductor substrate, a photo element in the semiconductor substrate, and an isolation region in the semiconductor substrate. The isolation region is proximate the photo element and comprises a dielectric material and an epitaxial region. The epitaxial region is disposed between the semiconductor substrate and the dielectric material.

Abstract: A method of forming an integrated circuit structure includes providing a substrate; forming a metal feature over the substrate; forming a dielectric layer over the metal feature; and forming an opening in the dielectric layer. At least a portion of the metal feature is exposed through the opening. An oxide layer is accordingly formed on an exposed portion of the metal feature. The method further includes, in a production tool having a vacuum environment, performing a plasma process to remove the oxide layer. Between the step of forming the opening and the oxide-removal process, no additional oxide-removal process is performed to the metal feature outside the production tool.

Abstract: Image sensors comprising an isolation region according to embodiments are disclosed, as well as methods of forming the image sensors with isolation region. An embodiment is a structure comprising a semiconductor substrate, a photo element in the semiconductor substrate, and an isolation region in the semiconductor substrate. The isolation region is proximate the photo element and comprises a dielectric material and an epitaxial region. The epitaxial region is disposed between the semiconductor substrate and the dielectric material.

Abstract: A device includes a semiconductor substrate, which has a front side and a backside. A photo-sensitive device is disposed on the front side of the semiconductor substrate. A first and a second grid line are parallel to each other, and are disposed on the backside of, and overlying, the semiconductor substrate. A stacked layer includes an adhesion layer, a metal layer over the adhesion layer, and a high-refractive index layer over the metal layer. The adhesion layer, the metal layer, and the high-refractive index layer are substantially conformal, and extend on top surfaces and sidewalls of the first and the second grid lines.

Abstract: An image sensor includes a substrate having opposite first and second sides, a multilayer structure on the first side of the substrate, and a photo-sensitive element on the second side of the substrate. The photo-sensitive element is configured to receive light that is incident upon the first side and transmitted through the multilayer structure and the substrate. The multilayer structure includes first and second light transmitting layers. The first light transmitting layer is sandwiched between the substrate and the second light transmitting layer. The first light transmitting layer has a refractive index that is from 60% to 90% of a refractive index of the substrate. The second light transmitting layer has a refractive index that is lower than the refractive index of the first light transmitting layer and is from 40% to 70% of the refractive index of the substrate.

Abstract: A non-human animal model for amyotrophic lateral sclerosis (ALS) is disclosed. The animal model comprises a rodent whose spinal cord motor neurons have a loss of TAR-DNA binding protein-43 (TDP-43) function and phenotypes exhibit ALS-like symptoms. A method for identifying a candidate agent for treating, preventing and/or inhibiting ALS associated with a loss-of-function of TDP-43 is also disclosed.

Abstract: A method of forming an integrated circuit structure includes providing a substrate; forming a metal feature over the substrate; forming a dielectric layer over the metal feature; and forming an opening in the dielectric layer. At least a portion of the metal feature is exposed through the opening. An oxide layer is accordingly formed on an exposed portion of the metal feature. The method further includes, in a production tool having a vacuum environment, performing an oxide-removal process to remove the oxide layer. Between the step of forming the opening and the oxide-removal process, no additional oxide-removal process is performed to the metal feature outside the production tool. The method further includes, in the production tool, forming a diffusion barrier layer in the opening, and forming a seed layer on the diffusion barrier layer.

Abstract: A backside illuminated CMOS image sensor comprises a photo active region formed over a substrate using a front side ion implantation process and an extended photo active region formed adjacent to the photo active region, wherein the extended photo active region is formed by using a backside ion implantation process. The backside illuminated CMOS image sensor may further comprise a laser annealed layer on the backside of the substrate. The extended photo active region helps to increase the number of photons converted into electrons so as to improve quantum efficiency.

Abstract: A device includes a semiconductor substrate having a front side and a backside. A photo-sensitive device is disposed at a surface of the semiconductor substrate, wherein the photo-sensitive device is configured to receive a light signal from the backside of the semiconductor substrate, and convert the light signal to an electrical signal. An amorphous-like adhesion layer is disposed on the backside of the semiconductor substrate. The amorphous-like adhesion layer includes a compound of nitrogen and a metal. A metal shielding layer is disposed on the backside of the semiconductor substrate and contacting the amorphous-like adhesion layer.