Patents by Inventor Tae Ahn

Tae Ahn has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 8549977
    Abstract: An apparatus for opening and closing a breech block includes a cam follower, a housing, a first plunger, a rotation unit, a pressurizing unit, an open cam, a first elastic member, and a second plunger. In the present invention, in a state that the open cam is out of the range of a moving path of the cam follower so as to restrict rotation of the cam follower, the second plunger is inserted into the housing so as to support the pressurizing unit. This may allow a closed state of the breech block to be maintained after firing. Furthermore, in the present invention, a closed mode of the breech block may be converted into an open mode, through simple manipulations, e.g., by rotating the rotation unit, i.e., by moving the pressurizing unit.
    Type: Grant
    Filed: December 27, 2011
    Date of Patent: October 8, 2013
    Assignee: Agency for Defense Development
    Inventors: Sang-Tae Ahn, Kuk-Jeong Kang, Tae-Ho Han, Cheon-Gon Jeon
  • Publication number: 20130243377
    Abstract: The inventive concept provides optic couplers, optical fiber laser devices, and active optical modules using the same. The optic coupler may include a first optical fiber having a first core and a first cladding surrounding the first core, a second optical fiber having a second core transmitting a signal light to the first optical fiber and a third cladding surrounding the second core, third optical fibers transmitting pump-light to the first optical fiber in a direction parallel to the second optical fiber; and a connector connected between the first optical fiber and the second optical fiber, the connector extending the third optical fibers disposed around the second optical fiber toward the first optical fiber, the connector comprising a third core connected between the first core and the second core and a fifth cladding surrounding the third core.
    Type: Application
    Filed: September 13, 2012
    Publication date: September 19, 2013
    Applicant: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE
    Inventors: Hong-Seok SEO, Bong Je Park, Joon Tae Ahn, Jung-Ho Song
  • Patent number: 8530330
    Abstract: A method for manufacturing a semiconductor device that can prevent the loss of an isolation structure and that can also stably form epi-silicon layers is described. The method for manufacturing a semiconductor device includes defining trenches in a semiconductor substrate having active regions and isolation regions. The trenches are partially filled with a first insulation layer. An etch protection layer is formed on the surfaces of the trenches that are filled with the first insulation layer. A second insulation layer is filled in the trenches formed with the etch protection layer to form an isolation structure in the isolation regions of the semiconductor substrate. Finally, portions of the active regions of the semiconductor substrate are recessed such that the isolation structure has a height higher than the active regions of the semiconductor substrate.
    Type: Grant
    Filed: April 10, 2008
    Date of Patent: September 10, 2013
    Assignee: Hynix Semiconductor Inc.
    Inventors: Sang Tae Ahn, Ja Chun Ku, Eun Jeong Kim, Wan Soo Kim
  • Patent number: 8507665
    Abstract: A reactive cyclodextrin derivative or a reactive glucose derivative is used as a template derivative for forming an ultra-low dielectric layer. A layer is formed of the reactive cyclodextrin derivative or the reactive glucose derivative capped with Si—H and then cured in an atmosphere of hydrogen peroxide to form the ultra-low dielectric layer.
    Type: Grant
    Filed: May 18, 2012
    Date of Patent: August 13, 2013
    Assignee: Hynix Semiconductor Inc.
    Inventors: Sung Kyu Min, Ja Chun Ku, Sang Tae Ahn, Chai O Chung, Hyeon Ju An, Hyo Seok Lee, Eun Jeong Kim, Chan Bae Kim
  • Publication number: 20130163345
    Abstract: A method of operating a semiconductor memory device includes an operation of applying a first voltage to selected bit lines, a second voltage to unselected bit lines and a common source line, and turning on drain and source selection transistors, an operation of applying a program voltage to a selected word line and a switch voltage to a switch word line, and applying a first pass voltage to first unselected word lines disposed between the switch word line and a common source line and between the selected word line and a bit line, and elevating the switch voltage to generate hot electrons and inject the hot electrons to a selected memory cell of the selected word line to program the selected cell.
    Type: Application
    Filed: September 6, 2012
    Publication date: June 27, 2013
    Inventors: Sang Tae AHN, Gyu Seog Cho, Chae Moon Lim, Yoo Nam Jeon, Seung Hwan Baik, Hee Jin Lee, Jae Seok Kim, Kyung Sik Mun, U Seon Im
  • Publication number: 20130160637
    Abstract: An apparatus for collecting an empty cartridge includes a bracket, an operation pin, an upper link, a lower link, and a collecting unit, wherein when a cannon barrel forward moves, the lower link rotates by being engaged with the upper link as the operation pin slides on the upper link, and the collecting unit is unfolded such that the empty cartridge is collected after a bump.
    Type: Application
    Filed: December 27, 2011
    Publication date: June 27, 2013
    Inventors: Sang-Tae AHN, Kuk-Jeong KANG, Suk-Kyun HONG, Chul-Mo YEO
  • Publication number: 20130160636
    Abstract: An apparatus for opening and closing a breech block includes a cam follower, a housing, a first plunger, a rotation unit, a pressurizing unit, an open cam, a first elastic member, and a second plunger. In the present invention, in a state that the open cam is out of the range of a moving path of the cam follower so as to restrict rotation of the cam follower, the second plunger is inserted into the housing so as to support the pressurizing unit. This may allow a closed state of the breech block to be maintained after firing. Furthermore, in the present invention, a closed mode of the breech block may be converted into an open mode, through simple manipulations, e.g., by rotating the rotation unit, i.e., by moving the pressurizing unit.
    Type: Application
    Filed: December 27, 2011
    Publication date: June 27, 2013
    Inventors: Sang-Tae AHN, Kuk-Jeong KANG, Tae-Ho HAN, Cheon-Gon JEON
  • Publication number: 20130157453
    Abstract: A method of manufacturing a semiconductor device includes forming first auxiliary patterns, alternately forming first material layers and second material layers on the sidewalls of the first auxiliary patterns so that a gap region between the first auxiliary patterns adjacent to each other is filled, removing the second material layers, and forming charge storage layers in respective regions from which the second material layers have been removed.
    Type: Application
    Filed: September 1, 2012
    Publication date: June 20, 2013
    Applicant: SK HYNIX INC.
    Inventor: Sang Tae Ahn
  • Publication number: 20130087256
    Abstract: The present invention relates to a pre-heat treatment steel wire with high strength for a cold forging which is used as a material for an engine, chassy and parts (bolts and shafts) of a steering device. The method includes: cold drawing of a wire rod containing 0.15-0.40 wt % of C, less than 1.5 wt % of Si, 0.30-2.0 wt % of Mn, less than 0.03 wt % of P, less than 0.03 wt % of S and the remainder including Fe and unavoidable impurities; rapidly heating the cold drawn wire rod in a series of high frequency induction heating devices over Ac3 transformation point for 30-90 seconds and maintaining such a heated state; rapidly cooling the wire rod in the heated state by water or oil; executing a tempering process by heating the wire rod to 500° C.
    Type: Application
    Filed: November 2, 2011
    Publication date: April 11, 2013
    Applicant: SAMHWA STEEL CO., LTD.
    Inventor: Soon-Tae Ahn
  • Patent number: 8378024
    Abstract: The present invention relates to a low surface gloss styrene resin composition. The composition of the present invention is composed of (A) 80-99.9 weight % of the basic resin comprising rubber-modified styrene resin and (B) 0.1-20 weight % of syndiotactic polystyrene, the matting agent. The composition also includes (C) hydrogenated styrene block copolymer comprising styrene block and butadiene rubber block as a compatibilizer by 0.1-20 weight % for the total weight of the low surface gloss styrene resin composed of (A) the basic resin and (B) the matting agent and additionally includes (D) a plasticizer by 0.1-30 weight %. The composition of the present invention has excellent weatherability and impact-resistance in addition to the low surface gloss properties, so that it can be applied in various products, particularly exterior products for structures such as sidings and window frames, etc.
    Type: Grant
    Filed: January 30, 2008
    Date of Patent: February 19, 2013
    Assignee: LG Chem, Ltd.
    Inventors: Yun-kyoung Cho, Seon-mo Son, Bong-keun Lee, Tae-bin Ahn, Han-jong You, Sung-tae Ahn
  • Patent number: 8358377
    Abstract: A method of operating an image display apparatus includes generating a thumbnail image based on an input signal, detecting an error in the thumbnail image, and displaying the thumbnail image if no error is detected in the thumbnail image.
    Type: Grant
    Filed: December 3, 2009
    Date of Patent: January 22, 2013
    Assignee: LG Electronics Inc.
    Inventors: Kyu Tae Ahn, Jae Kyung Lee, Gyu Seung Kim, Kun Sik Lee
  • Patent number: 8354350
    Abstract: A reactive cyclodextrin derivative or a reactive glucose derivative is used as a template derivative for forming an ultra-low dielectric layer. A layer is formed of the reactive cyclodextrin derivative or the reactive glucose derivative capped with Si—H and then cured in an atmosphere of hydrogen peroxide to form the ultra-low dielectric layer.
    Type: Grant
    Filed: May 18, 2012
    Date of Patent: January 15, 2013
    Assignee: Hynix Semiconductor Inc.
    Inventors: Sung Kyu Min, Ja Chun Ku, Sang Tae Ahn, Chai O Chung, Hyeon Ju An, Hyo Seok Lee, Eun Jeong Kim, Chan Bae Kim
  • Publication number: 20120244419
    Abstract: An electrolyte for a lithium rechargeable battery, a lithium rechargeable battery including the same, and a method of manufacturing lithium rechargeable battery, the electrolyte including a first additive, a second additive, a lithium salt; and a non-aqueous organic solvent.
    Type: Application
    Filed: March 20, 2012
    Publication date: September 27, 2012
    Inventors: Gun-Ho KWAK, Sung-Hoon Kim, Tae-Ahn Kim, Bo-Ra Shin
  • Publication number: 20120231634
    Abstract: A reactive cyclodextrin derivative or a reactive glucose derivative is used as a template derivative for forming an ultra-low dielectric layer. A layer is formed of the reactive cyclodextrin derivative or the reactive glucose derivative capped with Si—H and then cured in an atmosphere of hydrogen peroxide to form the ultra-low dielectric layer.
    Type: Application
    Filed: May 18, 2012
    Publication date: September 13, 2012
    Applicant: HYNIX SEMICONDUCTOR INC.
    Inventors: Sung Kyu MIN, Ja Chun KU, Sang Tae AHN, Chai O CHUNG, Hyeon Ju AN, Hyo Seok LEE, Eun Jeong KIM, Chan Bae KIM
  • Publication number: 20120231635
    Abstract: A reactive cyclodextrin derivative or a reactive glucose derivative is used as a template derivative for forming an ultra-low dielectric layer. A layer is formed of the reactive cyclodextrin derivative or the reactive glucose derivative capped with Si—H and then cured in an atmosphere of hydrogen peroxide to form the ultra-low dielectric layer.
    Type: Application
    Filed: May 18, 2012
    Publication date: September 13, 2012
    Applicant: HYNIX SEMICONDUCTOR INC.
    Inventors: Sung Kyu MIN, Ja Chun KU, Sang Tae AHN, Chai O CHUNG, Hyeon Ju AN, Hyo Seok LEE, Eun Jeong KIM, Chan Bae KIM
  • Publication number: 20120213235
    Abstract: Provided are an optical coupler and an active optical module including the same. The optical coupler includes at least one first optical fiber, a second optical fiber, and a hollow optical block. The at least one first optical fiber transfers pump light. The second optical fiber includes a cladding with a facet enlarged from a first outer diameter to a second outer diameter, and passes the pump light which is transferred through the first optical fiber. The hollow optical block includes a through hole, an incident surface, and a coupling surface. The through hole passes the cladding with the first outer diameter. The incident surface is connected to the first optical fiber at a side end of the through hole. The coupling surface is joined to the facet of the second optical fiber at the other side end of the through hole facing the incident surface.
    Type: Application
    Filed: January 9, 2012
    Publication date: August 23, 2012
    Applicant: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE
    Inventors: Hong-Seok SEO, Joon Tae AHN, Bong Je PARK, Jung-Ho SONG
  • Publication number: 20120209330
    Abstract: A flexible connection unit for use in a spinal fixation device, including: a longitudinal member having first end portion, a second end portion and a flexible member interposed between the first end portion and the second end portion, at least one of the first end portion and the second end portion configured to be coupled to a first bone securing member; and a spacer located between the first and second end portions, wherein at least a portion of the flexible member passes through an axial channel of the spacer and wherein the spacer comprises a resilient element configured to be coupled to a second bone securing member.
    Type: Application
    Filed: April 19, 2012
    Publication date: August 16, 2012
    Inventors: Tae-Ahn Jahng, Jason Yim, Brian Scott Bowman
  • Patent number: 8222110
    Abstract: A method for fabricating a semiconductor device includes forming a plurality of first active pillars by etching a substrate using a hard mask layer as an etching barrier, forming a gate conductive layer surrounding sidewalls of the first active pillars and the hard mask layer, forming a word line conductive layer filling gaps defined by the gate conductive layer, forming word lines and vertical gates by simultaneously removing portions of the word line conductive layer and the gate conductive layer on the sidewalls of the hard mask layer, forming an inter-layer dielectric layer filling gaps formed by removing the word line conductive layer and the gate conductive layer, exposing surfaces of the first active pillars by removing the hard mask layer, and growing second active pillars over the first active pillars.
    Type: Grant
    Filed: June 30, 2010
    Date of Patent: July 17, 2012
    Assignee: Hynix Semiconductor Inc.
    Inventors: Eun-Jeong Kim, Sang-Tae Ahn
  • Publication number: 20120174857
    Abstract: The present invention relates to a method and apparatus for growing sapphire single crystals, and more particularly to a method and apparatus for growing sapphire single crystals in which a high quality, long single crystal can be obtained within a short period of time upon the use of a long rectangular crucible and a long seed crystal extending in a c-axial direction. Use of the method and apparatus for growing sapphire single crystals according to the present invention can uniformly maintain the horizontal temperature at the inside of the crucible despite the use of a rectangular crucible, thereby obtaining a high-quality single crystal as well decreasing the possibility of a failure in the growth of the single crystal.
    Type: Application
    Filed: August 26, 2010
    Publication date: July 12, 2012
    Applicant: CRISTECH CO., LTD.
    Inventor: Jun Tae Ahn
  • Patent number: 8202807
    Abstract: A reactive cyclodextrin derivative or a reactive glucose derivative is used as a template derivative for forming an ultra-low dielectric layer. A layer is formed of the reactive cyclodextrin derivative or the reactive glucose derivative capped with Si—H and then cured in an atmosphere of hydrogen peroxide to form the ultra-low dielectric layer.
    Type: Grant
    Filed: December 27, 2007
    Date of Patent: June 19, 2012
    Assignee: Hynix Semiconductor Inc.
    Inventors: Sung Kyu Min, Ja Chun Ku, Chan Bae Kim, Sang Tae Ahn, Chai O Chung, Hyeon Ju An, Hyo Seok Lee, Eun Jeong Kim