Abstract: A method for manufacturing a semiconductor device that can prevent the loss of an isolation structure and that can also stably form epi-silicon layers is described. The method for manufacturing a semiconductor device includes defining trenches in a semiconductor substrate having active regions and isolation regions. The trenches are partially filled with a first insulation layer. An etch protection layer is formed on the surfaces of the trenches that are filled with the first insulation layer. A second insulation layer is filled in the trenches formed with the etch protection layer to form an isolation structure in the isolation regions of the semiconductor substrate. Finally, portions of the active regions of the semiconductor substrate are recessed such that the isolation structure has a height higher than the active regions of the semiconductor substrate.

Abstract: Provided are a tellurite glass composite, an optical waveguide, and an optical amplifier using the tellurite glass composite. The tellurite glass composite includes an entire composite including 25 (mol %)?TeO2?90 (mol %), 1 (mol %)?T1O3?55 (mol %) or 1 (mol %)?T2O3?40 (mol %), 0 (mol %)?ZnO?35 (mol %), 0 (mol %)?M2O?35 (mol %), and 0 (mol %)?Bi2O3?20 (mol %). Here, T1 includes a transition metal Mo, T2 includes a transition metal W, M2O includes Li2O, Na2O, or two or more of Li2O, Na2O, K2O, Rb2O, and Cs2O including metals having +1 valence electrons, and amounts of M2O and ZnO are not simultaneously “0”.

Abstract: Provided is an all-optical gain-clamped fiber amplifier, comprising transmission and isolation means for periodically transmitting an optical signal or reflecting amplified spontaneous emission (ASE) back to a gain medium. The transmission and isolation means can be embodied by an optical interleaver or a number of optical fiber Bragg gratings. Accordingly, an optical signal can be amplified across the entire C-band, and an ASE reflector-based gain-clamped fiber amplifier having a wider dynamic range than conventional amplifiers can be implemented.

Abstract: The present invention is directed to a composition for use in liver function improvement, blood alcohol level reduction and in-vivo antioxidant activity enhancement, comprising Lactobacillus brevis HY7401, Lactobacillus fermentum CS332, Lactobacillus acidophilus CSG, Bifidobacterium longum HY8001, an Alder tree extract, a Selfheal extract, a milk thistle extract, a green bean-rice bran fermentation extract, a turnip extract, a tomato extract, a broccoli extract, a pineapple extract, a colostrum powder, betaine, vitamin B1, B2, B3, B6, B9, B12, C, and E. The composition can improve declined liver functions and shows excellent hepatoprotective and hepatocurative activity against alcohol on excessive or habitual drinking with the ability to reduce blood alcohol levels. Its superior enhancement of in-vivo antioxidant activity also contributes to the use of the composition in the prevention of liver diseases and the improvement of liver functions.

Abstract: Disclosed is a semiconductor device with a flowable insulation layer formed on a capacitor and a method for fabricating the same. Particularly, the semiconductor device includes: a capacitor formed on a predetermined portion of a substrate; an insulation layer formed by stacking a flowable insulation layer and an undoped silicate glass layer on a resulting substrate structure including the substrate and the capacitor; and a metal interconnection line formed on the insulation layer. The method includes the steps of: forming a capacitor on a predetermined portion of a substrate; forming an insulation layer by stacking a flowable insulation layer and an undoped silicate glass layer on a resulting substrate structure including the substrate and the capacitor; and forming a metal interconnection line on the insulation layer.

Abstract: Provided is an all-optical gain-clamped fiber amplifier, comprising transmission and isolation means for periodically transmitting an optical signal or reflecting amplified spontaneous emission (ASE) back to a gain medium. The transmission and isolation means can be embodied by an optical interleaver or a number of optical fiber Bragg gratings. Accordingly, an optical signal can be amplified across the entire C-band, and an ASE reflector-based gain-clamped fiber amplifier having a wider dynamic range than conventional amplifiers can be implemented.

Abstract: An isolation structure of a semiconductor device is formed by forming a hard mask layer on a semiconductor substrate having active and field regions to expose the field region. A trench is defined by etching the exposed field region of the semiconductor substrate using the hard mask as an etch mask. An SOG layer is formed in the trench partially filling the trench. An amorphous aluminum oxide layer is formed on the resultant substrate including the SOG layer. An HDP layer is formed on the amorphous aluminum oxide layer to completely fill the trench. The HDP layer and the amorphous aluminum oxide layer are subjected to CMP to expose the hard mask. The hard mask and portions of the amorphous aluminum oxide layer that are formed on the HDP layer are removed. The amorphous aluminum oxide layer is crystallized.

Abstract: In a method for manufacturing a semiconductor device, a conductive layer is formed on a semiconductor substrate. A surface of the conductive layer is then treated by plasma. After the conductive layer is treated, an amorphous carbon layer for a hard mask is formed on the surface of the conductive layer that has been treated by the plasma.

Abstract: Provided is a gain-clamped (GC) optical amplifier using a fiber Raman amplifier (FRA) having a Raman cavity. The FRA having a Raman cavity comprises a Raman fiber module (RFM) amplifying and outputting an input optical signal and a resonant cavity generating a Raman laser and a gain clamping laser (GC laser), wherein the resonant cavity is formed as a feedback loop between an input terminal and an output terminal of the RFM. Accordingly, a gain of an optical signal propagating along a core of RFM keeps a constant value regardless of input signal intensity by generating the GC laser for gain clamping between a wavelength band of the Raman laser and a gain band of input signals.

Abstract: A method for forming a device isolation structure of a semiconductor device using at least three annealing steps to anneal a flowable insulation layer is presented. The method includes the steps of forming a hard mask pattern on a semiconductor substrate having active regions exposing a device isolation region of the semiconductor substrate; etching the device isolation region of the semiconductor substrate exposed through the hard mask pattern, and therein forming a trench; forming a flowable insulation layer to fill a trench; first annealing the flowable insulation layer at least three times; second annealing the first annealed flowable insulation layer; removing the second annealed flowable insulation layer until the hard mask pattern is exposed; and removing the exposed hard mask pattern.

Abstract: An isolation structure of a semiconductor device is formed by forming a hard mask layer on a semiconductor substrate having active and field regions to expose the field region. A trench is defined by etching the exposed field region of the semiconductor substrate using the hard mask as an etch mask. An SOG layer is formed in the trench partially filling the trench. An amorphous aluminum oxide layer is formed on the resultant substrate including the SOG layer. An HDP layer is formed on the amorphous aluminum oxide layer to completely fill the trench. The HDP layer and the amorphous aluminum oxide layer are subjected to CMP to expose the hard mask. The hard mask and portions of the amorphous aluminum oxide layer that are formed on the HDP layer are removed. The amorphous aluminum oxide layer is crystallized.

Abstract: Provided is a gain-clamped optical amplifier amplifying light without bandwidth loss of an incident optical signal, and the gain-clamped optical amplifier using a double-clad fiber comprises: an optical fiber including a core doped with a gain material for amplifying an optical signal, a primary clad adjacent to the outside of the core and having a lower refractive index than the core, and a secondary clad adjacent to the outside of the primary clad and having a lower refractive index than the primary clad; a light emitting element emitting a pump light for population inversion of the gain material; and a cavity unit producing laser oscillation by resonating spontaneous emission light emitted from the gain material population-inverted by the pump light.

Abstract: Provided is an optical fiber. The optical fiber includes a core and a cladding, the core containing a first element for inducing non-linear Raman phenomenon, and the cladding containing a second element which is a rare earth element, wherein when the optical fiber is pumped by two pumping light sources having different wavelengths with each other, the optical signals in the first and third band are Raman-amplified by the first element and the signals in the second band are amplified by a direct transition of the second element.

Abstract: A flexible connection unit for use in a spinal fixation device, including: a first end portion and a second end portion, at least one of the first end and second end configured to be engagable by a section of a first bone securing member; a flexible member located between the first and second ends, the flexible member permitting motion of the first end relative to the second end; and a transition area located between the first end and the flexible member, the transition area tapering in diameter from a first section of the transition area proximate to the first end toward a second section of the transition area proximate to the flexible member.

Abstract: Provided is a fiber laser system including fiber containing dysprosium. The fiber laser system uses 1.7-??m pump light. A resonator of the fiber laser system includes a dichroic mirror, a partial reflection mirror, and/or an FBG. Therefore, the fiber laser system can provide 3-?m laser light and have high light pumping efficiency and high output power. The fiber laser system includes: fiber including dysprosium, a pump light source disposed at a side of the fiber and emitting pump light having a wavelength exciting electrons of the dysprosium from a ground energy level 6H15/2 to an energy level 6H11/2; a first reflection member, disposed between the fiber and the pump light source, transmitting the pump light, and reflecting first lasing light having a first wavelength; and a second reflection member, disposed at a side opposite to the pump light source with respect to the fiber, transmitting a portion of the first lasing light.

Abstract: A reactive cyclodextrin derivative or a reactive glucose derivative is used as a template derivative for forming an ultra-low dielectric layer. A layer is formed of the reactive cyclodextrin derivative or the reactive glucose derivative capped with Si—H and then cured in an atmosphere of hydrogen peroxide to form the ultra-low dielectric layer.

Abstract: An apparatus for use in a plasma chemical vapor deposition (CVD) includes a chamber; a cooling gas inlet passing through an electrostatic chuck for supplying a cooling gas to the bottom surface of a wafer when the plasma CVD process is performed; and a clamping unit for clamping the wafer to the electrostatic chuck when the cooling gas is supplied.

Abstract: Disclosed is a resin composition comprising (A) 100 parts by weight of a base resin comprising a rubber-modified styrene-containing graft copolymer and a styrene-containing copolymer; (B) 0.5-8 parts by weight of an acrylic rubber graft copolymer resin having an average particle size of 0.1-0.5 ?m; and (C) 0.5-8 parts by weight of a graft copolymer resin comprising an ethylene ?-olefinic copolymer rubber having an average particle size of 0.1-0.8 ?m. The thermoplastic resin composition of the present invention greatly improves chemical resistance to insulating materials, such as urethane foam, or foaming agent compounds, such as freon (CFC-11, HCFC-141b, HFC-245fa, HFC-245eb, HFC-245ca, HFC-356mffm) and cyclopentane and offers superior impact strength, whiteness and processability. It can be useful for extrusion sheets of refrigerator interiors.

Abstract: Provided is an apparatus for manufacturing an optical fiber Bragg grating.