Patents by Inventor Tae Ahn

Tae Ahn has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20100302444
    Abstract: A method of operating an image display apparatus includes generating a thumbnail image based on an input signal, detecting an error in the thumbnail image, and displaying the thumbnail image if no error is detected in the thumbnail image.
    Type: Application
    Filed: December 3, 2009
    Publication date: December 2, 2010
    Inventors: Kyu Tae AHN, Jae Kyung Lee, Gyu Seung Kim, Kun Sik Lee
  • Patent number: 7815665
    Abstract: An adjustable spinal stabilization system having a flexible connection unit for non-rigid stabilization of the spinal column. In one embodiment, the spinal stabilization system includes a flexible connection unit having a tether running through a hollow portion of the flexible connection unit, wherein the tether limits bending of the flexible connection unit. In a further embodiment the tether is pre-tensioned. In a further embodiment, the tension upon or compression of the tether is adjustable.
    Type: Grant
    Filed: December 27, 2004
    Date of Patent: October 19, 2010
    Assignee: N Spine, Inc.
    Inventors: Tae-ahn Jahng, Jason Yim, Brian Scott Bowman
  • Publication number: 20100261355
    Abstract: A method for forming a high quality insulation layer on a semiconductor device is presented. The method includes a first step of supplying any one of a silicon source gas and an oxygen source gas into a process chamber in which a semiconductor substrate is placed; a second step of simultaneously supplying the silicon source gas and the oxygen source gas into the process chamber having undergone the first step and depositing a silicon oxide layer on the semiconductor substrate; and a third step of supplying any one of the silicon source gas and the oxygen source gas into the process chamber having undergone the second step.
    Type: Application
    Filed: June 29, 2009
    Publication date: October 14, 2010
    Inventors: Sang Tae AHN, Ja Chun KU, Seung Joon JEON
  • Publication number: 20100226366
    Abstract: The present invention discloses a receiving system and a method of processing data to receiving and processing mobile service data. The receiving system may include a signal receiving unit, a demodulating unit, a data processor, and a middleware engine. The signal receiving unit receives a broadcasting signal, which includes IP packets, payload of the IP packets including a DSM-CC module data part and a DSM-CC header, the DSM-CC module data part including a plurality of DSM-CC objects, and the DSM-CC header including identification information for identifying the DSM-CC module. The demodulating unit demodulates the received broadcasting signal including IP packets. The data processor extracts a plurality of DSM-CC objects of a corresponding payload with reference to DSM-CC header information of the IP packets demodulated by the demodulating unit and configuring a DSM-CC module, which includes identification information and the extracted DSM-CC objects.
    Type: Application
    Filed: July 23, 2008
    Publication date: September 9, 2010
    Inventors: Chul Soo Lee, In Hwan Choi, Ho Taek Hong, Kook Yeon Kwak, Hyoung Gon Lee, Jae Hyung Song, Jin Pil Kim, Won Gyu Song, Joon Hui Lee, Jin Woo Kim, Byoung Gill Kim, Jong Yeul Suh, Kyu Tae Ahn
  • Patent number: 7763052
    Abstract: A flexible spinal fixation device having a flexible metallic connection unit for non-rigid stabilization of the spinal column. In one embodiment, the fixation device includes at least two securing members configured to be inserted into respective adjacent spinal pedicles, each securing member each including a coupling assembly. The fixation device further includes a flexible metal connection unit configured to be received and secured within the coupling assemblies of each securing member so as to flexibly stabilize the affected area of the spine.
    Type: Grant
    Filed: March 10, 2004
    Date of Patent: July 27, 2010
    Assignee: N Spine, Inc.
    Inventor: Tae-ahn Jahng
  • Patent number: 7763523
    Abstract: A method for forming a device isolation structure of a semiconductor device using at least three annealing steps to anneal a flowable insulation layer is presented. The method includes the steps of forming a hard mask pattern on a semiconductor substrate having active regions exposing a device isolation region of the semiconductor substrate; etching the device isolation region of the semiconductor substrate exposed through the hard mask pattern, and therein forming a trench; forming a flowable insulation layer to fill a trench; first annealing the flowable insulation layer at least three times; second annealing the first annealed flowable insulation layer; removing the second annealed flowable insulation layer until the hard mask pattern is exposed; and removing the exposed hard mask pattern.
    Type: Grant
    Filed: March 10, 2008
    Date of Patent: July 27, 2010
    Assignee: Hynix Semiconductor Inc.
    Inventors: Sang Tae Ahn, Ja Chun Ku, Eun Jeong Kim
  • Publication number: 20100183926
    Abstract: An electrolyte for a rechargeable lithium battery and a rechargeable lithium battery including the same, the electrolyte including a lithium salt, a silylborate-based compound, an anhydride component, and a non-aqueous organic solvent.
    Type: Application
    Filed: December 28, 2009
    Publication date: July 22, 2010
    Inventors: Tae-Ahn Kim, Mi-Hyeun Oh, Na-Rae Won, Sung-Hoon Kim
  • Patent number: 7738165
    Abstract: Provided is an all-optical gain-clamped fiber amplifier, comprising transmission and isolation means for periodically transmitting an optical signal or reflecting amplified spontaneous emission (ASE) back to a gain medium. The transmission and isolation means can be embodied by an optical interleaver or a number of optical fiber Bragg gratings. Accordingly, an optical signal can be amplified across the entire C-band, and an ASE reflector-based gain-clamped fiber amplifier having a wider dynamic range than conventional amplifiers can be implemented.
    Type: Grant
    Filed: February 17, 2009
    Date of Patent: June 15, 2010
    Assignee: Electronics and Telecommunications Research Institute
    Inventors: Joon Tae Ahn, Hong Seok Seo, Woon Jin Chung, Bong Je Park
  • Publication number: 20100111118
    Abstract: A light coupler emitting a high power laser with a high beam quality and a fiber laser system including the light coupler is disclosed. The light coupler includes a first optical fiber bundle comprising a plurality of first optical fibers having either a single-mode core or a few-mode core and a second optical fiber, which guides multi-mode beams and is connected to the first optical fiber bundle. The optical fiber laser system includes a light coupler having a first optical fiber bundle comprising a plurality of first optical fiber having either a single-mode core or a few-mode core and a second optical fiber, which is connected to the first optical fiber bundle, is either a single cladding optical fiber or a double cladding optical fiber, and guides multi-mode beams, and one or more gain medium optical fiber, which is connected to the light coupler and emits light.
    Type: Application
    Filed: February 24, 2009
    Publication date: May 6, 2010
    Applicant: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE
    Inventors: Hong Seok Seo, Joon Tae Ahn, Bong Je Park
  • Publication number: 20100090290
    Abstract: A semiconductor device includes a semiconductor substrate having an active region which includes a gate forming zone and an isolation region; an isolation layer formed in the isolation region of the semiconductor substrate to expose side surfaces of a portion of the active region including the gate forming zone, such that the portion of the active region including the gate forming zone constitutes a fin pattern; a silicon epitaxial layer formed on the active region including the fin pattern; and a gate formed to cover the fin pattern on which the silicon epitaxial layer is formed.
    Type: Application
    Filed: December 15, 2009
    Publication date: April 15, 2010
    Applicant: HYNIX SEMICONDUCTOR INC.
    Inventors: Dong Sun SHEEN, Sang Tae AHN, Seok Pyo SONG, Hyeon Ju AN
  • Patent number: 7687371
    Abstract: An isolation structure of a semiconductor device is formed by forming a hard mask layer on a semiconductor substrate having active and field regions to expose the field region. A trench is defined by etching the exposed field region of the semiconductor substrate using the hard mask as an etch mask. An SOG layer is formed in the trench partially filling the trench. An amorphous aluminum oxide layer is formed on the resultant substrate including the SOG layer. An HDP layer is formed on the amorphous aluminum oxide layer to completely fill the trench. The HDP layer and the amorphous aluminum oxide layer are subjected to CMP to expose the hard mask. The hard mask and portions of the amorphous aluminum oxide layer that are formed on the HDP layer are removed. The amorphous aluminum oxide layer is crystallized.
    Type: Grant
    Filed: October 1, 2008
    Date of Patent: March 30, 2010
    Assignee: Hynix Semiconductor Inc.
    Inventors: Dong Sun Sheen, Seok Pyo Song, Sang Tae Ahn, Hyeon Ju An
  • Publication number: 20100075165
    Abstract: The present invention relates to a low surface gloss styrene resin composition. The composition of the present invention is composed of (A) 80-99.9 weight % of the basic resin comprising rubber-modified styrene resin and (B) 0.1-20 weight % of syndiotactic polystyrene, the matting agent. The composition also includes (C) hydrogenated styrene block copolymer comprising styrene block and butadiene rubber block as a compatibilizer by 0.1-20 weight % for the total weight of the low surface gloss styrene resin composed of (A) the basic resin and (B) the matting agent and additionally includes (D) a plasticizer by 0.1-30 weight %. The composition of the present invention has excellent weatherability and impact-resistance in addition to the low surface gloss properties, so that it can be applied in various products, particularly exterior products for structures such as sidings and window frames, etc.
    Type: Application
    Filed: January 30, 2008
    Publication date: March 25, 2010
    Applicant: LG CHEM, LTD.
    Inventors: Yun-kyoung Cho, Seon-mo Son, Bong-keun Lee, Tae-bin Ahn, Han-jong You, Sung-tae Ahn
  • Patent number: 7655534
    Abstract: A fin transistor is formed by forming a hard mask layer on a substrate having an active region and a field region. The hard mask layer is etched to expose the field region. A trench is formed by etching the exposed field region. The trench is filled with an SOG layer. The hard mask layer is removed to expose the active region. An epi-silicon layer is formed on the exposed active region. The SOG layer is then partially etched from the upper end of the trench, thus filling a lower portion of the trench. A HDP oxide layer is deposited on the etched SOG layer filling the trench, thereby forming a field oxide layer composed of the SOG layer and the HDP oxide. The HDP oxide layer in the field oxide layer is etched to expose both side surfaces of the epi-silicon layer. A gate is then formed on the epi-silicon layer of which both side surfaces are exposed and the field oxide layer.
    Type: Grant
    Filed: November 8, 2006
    Date of Patent: February 2, 2010
    Assignee: Hynix Semiconductor Inc.
    Inventors: Dong Sun Sheen, Seok Pyo Song, Sang Tae Ahn, Hyun Chul Sohn
  • Patent number: 7655533
    Abstract: A semiconductor device includes a semiconductor substrate having an active region which includes a gate forming zone and an isolation region; an isolation layer formed in the isolation region of the semiconductor substrate to expose side surfaces of a portion of the active region including the gate forming zone, such that the portion of the active region including the gate forming zone constitutes a fin pattern; a silicon epitaxial layer formed on the active region including the fin pattern; and a gate formed to cover the fin pattern on which the silicon epitaxial layer is formed.
    Type: Grant
    Filed: July 12, 2007
    Date of Patent: February 2, 2010
    Assignee: Hynix Semiconductor Inc.
    Inventors: Dong Sun Sheen, Sang Tae Ahn, Seok Pyo Song, Hyeon Ju An
  • Patent number: 7646951
    Abstract: Provided is an apparatus for manufacturing an optical fiber Bragg grating.
    Type: Grant
    Filed: November 20, 2007
    Date of Patent: January 12, 2010
    Assignee: Electronics and Telecommunications Research Institute
    Inventors: Joon Tae Ahn, Hong Seok Seo, Bong Je Park
  • Publication number: 20090285246
    Abstract: Provided is a multi-resonant optical fiber laser system including a multi-resonator having an optical fiber containing at least one rare-earth element and an optical fiber inducing the stimulated Raman effect. The multi-resonant optical fiber laser system includes a pump light source irradiating pump light, a first resonator, which includes a first gain medium optical fiber containing at least one rare-earth element and first and second reflectors disposed to face each other across the first gain medium optical fiber and irradiates first laser radiation having a first wavelength by converting the pump light using the first gain medium optical fiber, a second resonator, which includes a second gain medium optical fiber inducing the stimulated Raman effect and third and fourth reflectors disposed to face each other across the second gain medium optical fiber and irradiates second laser radiation having a second wavelength by converting the first laser radiation using the second gain medium optical fiber.
    Type: Application
    Filed: September 18, 2008
    Publication date: November 19, 2009
    Applicant: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE
    Inventors: Hong Seok Seo, Joon Tae Ahn, Bong Je Park, Taehyoung Zyung
  • Patent number: 7616668
    Abstract: Provided is a fiber laser system including fiber containing dysprosium. The fiber laser system uses 1.7-?m pump light. A resonator of the fiber laser system includes a dichroic mirror, a partial reflection mirror, and/or an FBG. Therefore, the fiber laser system can provide 3-?m laser light and have high light pumping efficiency and high output power. The fiber laser system includes: fiber including dysprosium, a pump light source disposed at a side of the fiber and emitting pump light having a wavelength exciting electrons of the dysprosium from a ground energy level 6H15/2 to an energy level 6H11/2; a first reflection member, disposed between the fiber and the pump light source, transmitting the pump light, and reflecting first lasing light having a first wavelength; and a second reflection member, disposed at a side opposite to the pump light source with respect to the fiber, transmitting a portion of the first lasing light.
    Type: Grant
    Filed: February 7, 2008
    Date of Patent: November 10, 2009
    Assignee: Electronics and Telecommunications Research Institute
    Inventors: Joon Tae Ahn, Hong-Seok Seo, Bong Je Park
  • Publication number: 20090257729
    Abstract: A device for recording and playing contents, a sever for managing content location information, an information recording medium, a method for managing content information, and a recording medium for the method are disclosed. The recording/playing device includes a communication interface unit configured to interface data transmission and reception with at least one external resource connected to a network and a controller configured to receive a request for a content, search for an external resource recording the requested content based on content identification information and control receiving the content from the searched external resource.
    Type: Application
    Filed: April 13, 2009
    Publication date: October 15, 2009
    Applicant: LG Electronics Inc.
    Inventor: Kyu Tae AHN
  • Patent number: 7563654
    Abstract: A method for manufacturing a semiconductor device is disclosed. The method includes the steps of defining a trench into a field region of a semiconductor substrate having an active region and the field region; partially filing the trench with a flowable insulation layer; completely filling the trench with an isolation structure by depositing a close-packed insulation layer on the flowable insulation layer in the trench; etching through a portion of the close-packed insulation layer and etching into a partial thickness of the flowable insulation layer of the insulation structure to expose a portion of the active region; cleaning the resultant substrate having the active region relatively projected; forming spacers on etched portions of the flowable insulation layer where bowing occurs during the cleaning step; and forming gates on the active region and the insulation structure to border the exposed portion of the active region.
    Type: Grant
    Filed: December 29, 2006
    Date of Patent: July 21, 2009
    Assignee: Hynix Semiconductor Inc.
    Inventors: Dong Sun Sheen, Seok Pyo Song, Sang Tae Ahn, Hyeon Ju An, Hyun Chul Sohn
  • Patent number: D622514
    Type: Grant
    Filed: October 1, 2009
    Date of Patent: August 31, 2010
    Assignee: LG Electronics Inc.
    Inventors: Sun Ha Park, Seong Ahn Jeon, Byung Mu Huh, Hyun Tae Ahn, Sun Jung Park