Abstract: Systems and methods may be used to enact plasma tuning. Exemplary semiconductor processing chambers may include a pedestal positioned within the chamber and configured to support a substrate. The pedestal may include an electrode operable to form a plasma within a processing region of the semiconductor processing chamber, with the processing region at least partially defined by the pedestal. The pedestal may include a heater embedded within the pedestal, and the heater may be coupled with a power supply. An RF filter may be coupled between the power supply and the heater. A shunt capacitor may also be coupled between the RF filter and the heater.

Abstract: A plasma source includes a first electrode and a second electrode having respective surfaces, and an insulator that is between and in contact with the electrodes. The electrode surfaces and the insulator surface substantially define a plasma cavity. The insulator surface defines one or more grooves configured to prevent deposition of material in a contiguous form on the insulator surface. A method of generating a plasma includes introducing one or more gases into a plasma cavity defined by a first electrode, a surface of an insulator that is in contact with the first electrode, and a second electrode that faces the first electrode. The insulator surface defines one or more grooves where portions of the insulator surface are not exposed to a central region of the cavity. The method further includes providing RF energy across the first and second electrodes to generate the plasma within the cavity.

Abstract: A plasma source includes a first electrode and a second electrode having respective surfaces, and an insulator that is between and in contact with the electrodes. The electrode surfaces and the insulator surface substantially define a plasma cavity. The insulator surface defines one or more grooves configured to prevent deposition of material in a contiguous form on the insulator surface. A method of generating a plasma includes introducing one or more gases into a plasma cavity defined by a first electrode, a surface of an insulator that is in contact with the first electrode, and a second electrode that faces the first electrode. The insulator surface defines one or more grooves where portions of the insulator surface are not exposed to a central region of the cavity. The method further includes providing RF energy across the first and second electrodes to generate the plasma within the cavity.

Abstract: A control system of a starting motor for an automatic transmission vehicle includes a starting switch having a plurality of nodes and an ignition key for connecting the plurality of nodes to a battery, a position sensor detecting a shift lever position and generating a pulse width modulation signal corresponding thereto, a shift control module receiving the pulse width modulation signal from the position sensor and generating a starting control signal, and a starting relay electrically connected to the starting switch and the shift control module and applying the battery power to the starting motor, wherein the shift control module generates the starting control signal if the shift lever position is a P position or an N position.

Abstract: Fuel cell including an electrolyte, an anode and a cathode on both sides of the electrolyte, a cathode side separator at an outer side of the cathode having a flow passage for flow of air, and a flow passage between the electrolyte and the anode, thereby improving an electricity generating performance.

Abstract: There are disclosed a stacked package formed by stacking semiconductor device packages and a manufacturing method thereof. Each package includes leads and connection terminals. A semiconductor chip is electrically connected to the connection terminals. A package body has the same thickness as that of the lead so as to expose the upper and the lower surfaces of the leads to the package body. Each of the packages is stacked on another package by electrically connecting the exposed upper and lower surfaces of the leads with each other. The manufacturing method has preparing lead frames, attaching an adhesive tape to the lower surface of the lead frame, bonding a semiconductor chip to the adhesive tape in the chip receiving cavity between the leads, connecting the semiconductor chip to the connection terminals, forming a package body, removing the adhesive tape; removing dam bars from the side frame, separating packages from the lead frame, and forming a stacked package by stacking a plurality of the packages.