Abstract: A method for fabricating a semiconductor device with a bulb shaped recess gate pattern includes selectively etching a first portion of a substrate to form a first recess; forming a spacer on sidewalls of the first recess; performing an isotropic etching process on a second portion of the substrate beneath the first recess to form a second recess, the second recess being wider and more rounded than the first recess; removing the spacer; and forming a gate pattern having a first portion buried into the first and second recesses and a second portion projecting over the substrate.

Abstract: A height adjusting water saving urinal adapted to be connected to a flush toilet system, includes a bowl, a top opening, a bottom opening, a bottom drain opening, an extendable urinal, a connecting device and a seat that is provided on the top opening so that a female user can sit on the seat. The bowl has a basin, a top portion, and a bottom portion. The top opening is provided at the top portion of the bowl. The bottom drain opening is provided at the bottom portion of the bowl. The extendable urinal drain pipe extends from the bottom drain opening. The connecting device, provided at an end of the extendable urinal drain pipe, is for connecting the urinal to the flush toilet system. The extendable urinal drain pipe shares the main drain pipe of the flush toilet.

Abstract: A power train for hybrid vehicles increases the range of the transmission gear ratio within which the efficiency of the power train is superior. Furthermore, the method of operating the power train varies depending on the transmission gear ratio, and thus the power train can be operated with superior efficiency.

Abstract: Disclosed are a mask mold, a manufacturing method thereof, and a method for forming a large-sized micro pattern using the manufactured mask mold, in which the size of a nano-level micro pattern can be enlarged using a simple method with low cost and interference and stitching errors between cells forming a large area can be minimized. The method for manufacturing the mask mold includes the operations of coating resist on a mask or a plurality of small molds having an engraved micro pattern, pressing the small molds to imprint the micro pattern on the resist, curing the resist, and releasing the small molds from the resist.

Abstract: Provided is a substrate for forming a pattern comprising an inorganic layer having a modified surface, wherein the modified surface is formed by coating a surface of the inorganic layer with a bifunctional molecule comprising a functional group having an affinity for a nanocrystal at one end of the molecule and a functional group having an affinity for the inorganic layer at the other end of the molecule. A method for forming a pattern of nanocrystals is also provided.

Abstract: A method for fabricating a semiconductor device having a recess gate includes forming a first recess pattern by etching the substrate and a sidewall protection layer on sidewalls of the first recess pattern, forming a second recess pattern having a greater width than the first recess pattern by etching a certain portion of the substrate below a bottom portion of the first recess pattern, and forming a gate electrode filling the first and the second recess patterns.

Abstract: A method for fabricating a semiconductor device includes forming a hard mask pattern over a substrate having a field oxide layer, etching the substrate to form a recess by using the hard mask pattern, forming a first conductive layer over the recess and the hard mask pattern, planarizing the first conductive layer, and forming a second conductive layer over the planarized first conductive layer.

Abstract: A method of fabricating a semiconductor device includes forming a hard mask pattern over a substrate, wherein the hard mask pattern exposes a recess region, performing a first etching process on the exposed recess region to form a first recess having sidewalls and to form passivation layers on the sidewalls of the first recess wherein the passivation layers are comprised of an etch reactant of the first etching process, and performing a second etching process on the substrate below the first recess to form a second recess.

Abstract: A method for fabricating a semiconductor device includes forming a hard mask pattern over a substrate, forming a first recess in the substrate and a passivation layer on sidewalls of the first recess using the hard mask pattern as an etch barrier, and forming a second recess by etching a bottom portion of the first recess using the passivation layer as an etch barrier, wherein a width of the second recess is greater than that of the first recess.

Abstract: A method for fabricating a semiconductor device includes etching a substrate to form a first trench pattern, forming spacers over sidewalls of the first trench pattern, etching a bottom portion of the first trench pattern using the spacers as a barrier to form a second trench pattern, performing an isotropic etching on the second trench pattern to round sidewalls of the second trench pattern and form a bulb pattern, and forming a gate over a recess pattern including the first trench pattern, the rounded second trench pattern and the bulb pattern.

Abstract: Disclosed herein is a method of depositing a nanolaminate film for next-generation non-volatile floating gate memory devices by atomic layer deposition. The method includes the steps of: introducing a substrate into an atomic layer deposition reactor; forming on the substrate a first high-dielectric-constant layer by alternately supplying an oxygen source and a metal source selected from among an aluminum source, a zirconium source and a hafnium source; forming on the first high-dielectric-constant layer a nickel oxide layer by alternately supplying a nickel source and an oxygen source; and forming on the nickel oxide layer a second high-dielectric-constant layer by alternately supplying an oxygen source and a metal source selected from among an aluminum source, a zirconium source and a hafnium source.

Abstract: A power delivery system of a hybrid vehicle includes: a planetary gear part disposed including a first planetary gear, a second planetary gear, and a third planetary gear; a driving motor/generator part including a first motor/generator connected to the third planetary gear such that a power delivery can be performed therebetween, and a second motor/generator configured to deliver power to a driving shaft via the second planetary gear and supporting an engine in a starting state so as to operate the driving shaft; a clutch part connected to the planetary gear part such that the hybrid vehicle can drive by changing the operation mode at at least a critical mechanical point wherein the mechanical power of the driving motor/generator part is zero; and a controller controlling operations of the driving motor/generator part and the clutch part.

Abstract: A method of fabricating a semiconductor device includes forming an isolation structure in a substrate to define an active region, forming a recess mask pattern over the isolation structure and the active region, etching the isolation structure exposed by the recess mask pattern to a certain depth, etching the substrate to form a recess pattern, and forming a gate electrode over the recess pattern.

Abstract: A method for fabricating a recess gate in a semiconductor device includes etching a substrate to form a first recess, etching the substrate at side portions of the first recess to form a second recess, and forming a gate insulation layer and a gate electrode over the second recess, wherein etching the substrate to form the second recess includes performing an isotropic etching process.

Abstract: A power train for hybrid vehicles increases the range of the transmission gear ratio within which the efficiency of the power train is superior. The method of operating the power train varies depending on the transmission gear ratio, and thus the power train can be operated with superior efficiency.

Abstract: A power train for hybrid vehicles increases the range of the transmission gear ratio within which the efficiency of the power train is superior. Furthermore, the method of operating the power train varies depending on the transmission gear ratio, and thus the power train can be operated with superior efficiency.

Abstract: A power train for hybrid vehicles increases the range of the transmission gear ratio within which the efficiency of the power train is superior. Furthermore, the method of operating the power train is varied depending on the transmission gear ratio, so that the power train can be operated with superior efficiency.

Abstract: A power train for hybrid vehicles increases the range of the transmission gear ratio within which the efficiency of the power train is superior. Furthermore, the method of operating the power train varies depending on the transmission gear ratio, and thus the power train can be operated with superior efficiency.

Abstract: A method for fabricating a semiconductor device with a bulb shaped recess gate pattern includes selectively etching a first portion of a substrate to form a first recess; forming a spacer on sidewalls of the first recess; performing an isotropic etching process on a second portion of the substrate beneath the first recess to form a second recess, the second recess being wider and more rounded than the first recess; removing the spacer; and forming a gate pattern having a first portion buried into the first and second recesses and a second portion projecting over the substrate.

Abstract: A method for forming a semiconductor device having a recess pattern with a rounded top corner is provided. The method includes forming an etch mask pattern including a patterned sacrificial layer and a patterned hard mask layer over a substrate; etching predetermined portions of exposed sidewalls of the patterned sacrificial layer to form an undercut; etching the substrate to a predetermined depth using the etch mask pattern as an etch mask to form a recess having top corners; and performing an isotropic etching process to round the top corners of the recess beneath the undercut.