Abstract: The present disclosure may provide display device and a method for manufacturing the same. The display device includes a substrate including pixel circuit units, a plurality of pixel electrodes on the pixel circuit units of the substrate and including first connection electrodes thereon and a plurality of light emitting elements on the pixel electrodes and including second connection electrodes bonded to the first connection electrodes, wherein each of the second connection electrodes includes a plurality of sub-connection electrodes that are spaced from each other.

Abstract: The present invention relates to a composition for inhibiting alpha-synuclein aggregation and a method for inhibiting alpha-synuclein aggregation and, more specifically, to techniques for inhibiting alpha-synuclein aggregation and phosphorylation by introducing Nurr1 and Foxa2 genes to induce the expressions thereof, and the composition according to the present disclosure has an excellent effect of inhibiting ?-synuclein aggregation and phosphorylation and thus can be used in the treatment and prevention of Parkinson's disease.

Abstract: A deep UV light emitting diode includes a substrate, an n-type semiconductor layer located on the substrate, a mesa disposed on the n-type semiconductor layer, and including an active layer and a p-type semiconductor layer, an n-ohmic contact layer in contact with the n-type semiconductor layer, a p-ohmic contact layer in contact with the p-type semiconductor layer, an n-bump electrically connected to the n-ohmic contact layer, and a p-bump electrically connected to the p-ohmic contact layer. The mesa includes a plurality of vias exposing a first conductivity type semiconductor layer.

Abstract: A message hop-based communication method of guaranteeing real-time communication in a vehicle communication environment may comprise: receiving, by a first on-board unit (OBU) of a first vehicle, a first message including a message frame (MF) for probe vehicle data (PVD) from a road side unit (RSU); and transmitting a second message, including an MF for a basic safety message (BSM), to a second OBU of a second vehicle, the second message corresponding to the first message, wherein the PVD and the BSM each comprise a data frame for a hopping request.

Abstract: A method of extending message nodes of an Open Mobile Alliance (OMA)-Device Management (DM) protocol, which is performed by a server to improve efficiency of a vehicle over-the air (OTA) update, may comprise: receiving a package including vehicle device information (DevInfo) from a client of a vehicle; and checking an update state of software (SW) installed on the client on the basis of information having a field for defining information on a vehicle registration district, a field for defining information on a production year of the vehicle, and an SW field for defining an SW expansion which are included in the DevInfo.

Abstract: Disclosed is a user authentication-based packet classification method and apparatus for providing differentiated security services in a ship network. A user authentication-based packet classification method includes receiving an authorization code request message from a user terminal including a client, authenticating and authorizing a user of the client based on the authorization code request message, transmitting an authorization code response message to the user terminal in response to the authorization code request message, receiving an access token request message from the user terminal based on the authorization code response message, and transmitting an access token response message including an access token to the user terminal in response to the access token request message.

Abstract: A display device includes a plurality of pixel electrodes on a substrate, light-emitting elements on the plurality of pixel electrodes and extending in a thickness direction of the substrate and connecting electrodes between the plurality of pixel electrodes and the light-emitting elements, wherein a width of the connecting electrodes is greater than a width of the light-emitting elements, and upper corners of each of the light-emitting elements and upper corners of each of the connecting electrodes are rounded.

Abstract: A display device includes: a pixel circuit layer including a plurality of transistors; first partition wall and a second partition wall on the pixel circuit layer, each of the first and second partition walls having a shape protruding in a thickness direction; a first electrode and a second electrode on the same layer and respectively on the first partition wall and the second partition wall; a light emitting element between the first electrode and the second electrode; and a semiconductor pattern directly on the first electrode.

Abstract: A deep UV light emitting diode includes a substrate, an n-type semiconductor layer located on the substrate, a mesa disposed on the n-type semiconductor layer, and including an active layer and a p-type semiconductor layer, an n-ohmic contact layer in contact with the n-type semiconductor layer, a p-ohmic contact layer in contact with the p-type semiconductor layer, an n-bump electrically connected to the n-ohmic contact layer, and a p-bump electrically connected to the p-ohmic contact layer. The mesa includes a plurality of vias exposing a first conductivity type semiconductor layer.

Abstract: A display device includes: a first substrate; a second substrate on the first substrate and exposing a first edge portion of the first substrate, the second substrate protruding beyond a second edge portion of the first substrate; a connection line on the first edge portion of the first substrate, the connection line having a first end portion protruding beyond a first side of the second substrate and a second end portion covered by the second substrate; and a thin-film transistor layer on the second substrate and connected to the connection line. The thin-film transistor layer includes signal lines extending from the first side to a second side of the second substrate. The signal lines extend into contact openings in the thin-film transistor layer and are exposed at a lower part of the second substrate on the second side of the second substrate.

Abstract: A Merkle tree-based data management method may comprise: aligning data into two-dimensional square matrix; calculating a hash value of each node of the two-dimensional square matrix; calculating hash values of each row of the two-dimensional square matrix; generating an additional column with nodes having the hash values of each row; calculating hash values of each column of the two-dimensional square matrix; generating an additional row with nodes having hash values of each column; and calculating a Merkle root by concatenating the hash values of the additional column and the hash values of the additional row.

Abstract: The present invention provides a novel allulose epimerase variant in which an amino acid residue present at a specific position of an amino acid sequence of wild-type D-allulose 3-epimerase derived from Flavonifractor plautii is substituted with another amino acid residue, and various uses thereof. The novel allulose epimerase variant according to the present invention has a higher conversion activity of fructose to allulose than that of the wild-type D-allulose 3-epimerase derived from Flavonifractor plautii or a D-allulose epimerase variant W29K/G216S/M234I, and has excellent thermal stability especially under high temperature conditions of 60° C. or higher, thereby preventing contamination during an industrial-scale enzymatic conversion reaction for the mass production of allulose, shortening the production time, and reducing the production costs.

Abstract: The present disclosure may provide a display device and method of fabricating the same. According to one or more embodiments, a display device includes a first substrate including pixel circuit units, a plurality of light-emitting elements on the first substrate, a partition wall filling gaps between the light-emitting elements and providing spaces in emission areas, on the light-emitting elements and wavelength conversion layers in the spaces.

Abstract: A display device includes: a pixel circuit layer including a plurality of transistors; first partition wall and a second partition wall on the pixel circuit layer, each of the first and second partition walls having a shape protruding in a thickness direction; a first electrode and a second electrode on the same layer and respectively on the first partition wall and the second partition wall; a light emitting element between the first electrode and the second electrode; and a semiconductor pattern directly on the first electrode.

Abstract: A display device includes: a first substrate; a second substrate on the first substrate and exposing a first edge portion of the first substrate, the second substrate protruding beyond a second edge portion of the first substrate; a connection line on the first edge portion of the first substrate, the connection line having a first end portion protruding beyond a first side of the second substrate and a second end portion covered by the second substrate; and a thin-film transistor layer on the second substrate and connected to the connection line. The thin-film transistor layer includes signal lines extending from the first side to a second side of the second substrate. The signal lines extend into contact openings in the thin-film transistor layer and are exposed at a lower part of the second substrate on the second side of the second substrate.

Abstract: A display device and a manufacturing method thereof are disclosed. The display device may include a pixel circuit layer including a plurality of transistors, a first partition wall and a second partition wall on the pixel circuit layer, and each protruding in a thickness direction, a first electrode and a second electrode formed on the same layer, and on the first partition wall and the second partition wall, respectively; a light emitting element between the first electrode and the second electrode; and a first organic pattern directly on the light emitting element.

Abstract: A display device and a manufacturing method thereof are disclosed. The display device may include a pixel circuit layer including a plurality of transistors, a first partition wall and a second partition wall on the pixel circuit layer, and each protruding in a thickness direction, a first electrode and a second electrode formed on the same layer, and on the first partition wall and the second partition wall, respectively; a light emitting element between the first electrode and the second electrode; and a first organic pattern directly on the light emitting element.

Abstract: A display device includes: a base layer; a circuit layer provided on the base layer, the circuit layer including pixel circuits and sensor circuits; a pixel element layer provided on the circuit layer, the pixel element layer including light emitting elements respectively connected to the pixel circuits and light receiving elements respectively connected to the sensor circuits; an encapsulation layer covering the pixel element layer; and a touch sensing layer on the encapsulation layer, the touch sensing layer including a conductive pattern forming touch electrodes for sensing a touch. The light emitting elements include light emitting layers, and the light receiving elements include light receiving layers. The conductive pattern includes main patterns respectively surrounding the light receiving layers in a closed form.

Abstract: A light-emitting element includes a first semiconductor layer doped with an n-type dopant, a second semiconductor layer disposed on the first semiconductor layer and doped with a p-type dopant, a light-emitting layer disposed between the first and second semiconductor layers, an electrode layer disposed on the second semiconductor layer, an insulating film surrounding at least an outer surface of the light-emitting layer, and a void formed on the first semiconductor layer, the void extending in a direction in which the first semiconductor layer, the light-emitting layer, and the second semiconductor layer are disposed.

Abstract: The present invention relates to an ultra-thin glass having a thickness (t), characterized in that, when the first surface is defined as a point (t0) with t=0, and the second surface is defined as a point (tt) with t=t, the point (tKmax) at which the concentration of potassium ions (K+) is maximum between t0 and tt satisfies at least one of Equations 1 and 2 below, and the ultra-thin glass has a bend radius of less than 26·t, and a method for manufacturing the same. t0<tKmax?0.5·tt??[Equation 1] 0.5·tt?tKmax<tt.