Abstract: A direct light type backlight unit having a structure in which divided luminance areas are sequentially turned on and off and a liquid crystal display device employing the backlight unit are provided. The backlight unit includes: a base substrate; a plurality of point light sources arranged in a plurality of lines and mounted on the base substrate; and a reflector sheet vertically formed between lines of the point light sources, reflecting light emitted from the point light sources.

Abstract: A light emitting assembly, a backlight unit, and a display are provided. The light emitting assembly includes: light emitting modules, wherein the light emitting modules include: a substrate having an electrical connecting portion; and a plurality of light emitting units arranged on the substrate, and wherein the light emitting modules can be assembled using the electrical connecting portion. The light emitting assembly can be assembled using the light emitting modules comprised of independent blocks and thus, can be freely used regardless of the size of the display.

Abstract: A light emitting cluster, a backlight unit having the same, and a liquid crystal display device having the backlight unit are provided. The light emitting cluster includes five light emitting devices including two first light emitting devices producing first color light, two second light emitting devices producing second color light, and a third light emitting device producing third color light, wherein one of the first light emitting devices, one of the second light emitting devices, the third light emitting device, one of the first light emitting devices, and one of the second light emitting devices are arranged sequentially.

Abstract: In a bipolar plate of a fuel cell including a plate having a certain area and thickness; inflow and outflow buffer grooves respectively formed at both sides of the plate so as to have a certain area and depth; plural channels for connecting the inflow buffer groove and the outflow buffer groove; plural buffer protrusions formed in the inflow and outflow buffer grooves so as to have a certain height; an inflow path formed on the plate so as to be connected to the inflow buffer groove; and an outflow path formed on the plate so as to be connected to the outflow buffer groove, it is possible to uniformize flux distribution and reduce flow resistance of fuel and air respectively flowing into a fuel electrode and an air electrode of a fuel cell.

Abstract: Disclosed is a fuel cell system comprising: a fuel cell stack including an anode, a cathode, and an electrolyte membrane disposed therebetween; a fuel tank for supplying hydrogen-including fuel to the anode of the fuel cell stack; and an oxidant supplying unit for adding ozone to oxygen-including air and thereby supplying to the cathode of the fuel cell stack. According to this, ozone is supplied to the cathode of the fuel cell stack thus to accelerate a reaction speed in the fuel cell stack and thereby to obtain a relatively high current density.

Abstract: Disclosed is a fuel cell system comprising: a fuel tank connected to a anode of a fuel cell stack for supplying hydrogen-including fuel to the anode; an air supplying unit connected to a cathode of the fuel cell stack for supplying oxygen-including air to the cathode; a heating unit for heating air and fuel supplied to the fuel cell stack; and a purge unit for returning fuel remaining at each system to the fuel tank when a system driving is stopped. According to this, a temperature of the fuel cell stack can reach a goal temperature within the shortest time by heating fuel at the time of driving a system, and fuel remaining at the fuel cell stack and each system is returned to the fuel tank when the system driving is stopped, thereby increasing a performance of the fuel cell system.

Abstract: An electrode of an electrochemical battery includes: an electrode catalyst and a catalyst holding body for holding and confining the electrode catalyst by being entangled with the electrode catalyst. A fabrication method of the electrode is simple, and the electrode has a small volume, high flexibility and durability. A specific surface area of the electrode catalyst is large and an efficiency of the battery can be improved.

Abstract: In a bipolar plate of a fuel cell and a fabrication method thereof, the bipolar plate of the fuel cell includes a plate; a fluid flowing space formed on both sides of the plate; a fluid guide mesh installed on the fluid flowing space; an inflow path formed on the plate to be connected with the fluid flowing space; and an outflow path formed on the plate to be connected with the fluid flowing space. Also, in the fabrication method, the bipolar plate is fabricated with a certain mold and by a processing method. Accordingly, it is possible to uniformize flux distribution and reduce flow resistance of fuel and air respectively flowing into a fuel electrode and an air electrode of a fuel cell. In addition, reaction area with a M.E.A and diffusion zone can be increased, and fabrication can be simplified and facilitated.

Abstract: In a structure for reducing internal circuit of a fuel cell including adjacently stacked unit cells; a fuel side distributing means for connecting each fuel side inflow path of the unit cells and insulating them; and an air side distributing means for connecting each air side inflow path of the unit cells, electric connection among the stacked plural unit cells by fuel as an electrolyte solution and electric leakage by additional parts can be minimized.

Abstract: In a MEA (membrane electrode assembly) of a fuel cell including an electrolyte membrane as an ion transfer medium arranged between a bipolar plate having a fuel side open groove in which fuel flows and a bipolar plate having an air side open groove in which air flows so as to form a fuel path with the fuel side open groove and form an air path with the air side open groove; and a catalyst electrode inserted into the fuel side open groove so as to be separated from the electrolyte membrane in order to form a fuel path with both sides thereof and induce electrochemical oxidation with the fuel, by activating action occurred on the fuel electrode in which fuel is supplied and the air electrode in which air is supplied, current generating efficiency can be improved.

Abstract: A reflecting type liquid crystal display device having a perpendicularly aligned structure and shorter response time and a projector using the same are provided. The reflecting type liquid crystal display device includes a first substrate having a reflective electrode, a second substrate having a transparent electrode, first and second alignment layers provided on the first substrate and the second substrate to be opposed to and face each other, a spacer interposed between the first alignment layer and the second alignment layer to form a predetermined cell gap therebetween, and vertically aligned liquid crystals injected into the cell gap, the cell gap being not greater than 1.0 ?m, the dielectric anisotropy of the liquid crystals being negative value, and the refractive index anisotropy of the liquid crystals being not less than 0.14.

Abstract: A multi-level semiconductor memory device preferably includes a plurality of wordlines connected to memory cells configured to store multi-level data. A first circuit supplies a temperature-responsive voltage to a selected wordline in order to read a state of a selected memory cell. A second circuit supplies a predetermined voltage to non-selected wordlines. The first circuit preferably includes a semiconductor element that varies its resistance in accordance with temperature. Reliable program-verifying and reading functions are preferably provided despite migration of threshold voltage distribution profiles due to temperature variations.

Abstract: A non-volatile semiconductor memory device includes a plurality of page buffers, each corresponding to a sense node. Voltages of a first set of sense nodes are varied according to states of corresponding memory cells during a first sense period, while voltages of a second set of sense nodes are fixed at a predetermined voltage. During the second sense period, voltages of the second set of sense nodes are varied according to states of corresponding memory cells, while voltages of the first set of sense nodes are fixed at a predetermined voltage. Using this sensing scheme, even though a sense node corresponding to an OFF cell is floated, a voltage of the floated sense node is not coupled down when a voltage of a neighboring sense node corresponding to an ON cell is lowered.

Abstract: A non-volatile semiconductor memory device includes a plurality of page buffers, each corresponding to a sense node. Voltages of a first set of sense nodes are varied according to states of corresponding memory cells during a first sense period, while voltages of a second set of sense nodes are fixed at a predetermined voltage. During the second sense period, voltages of the second set of sense nodes are varied according to states of corresponding memory cells, while voltages of the first set of sense nodes are fixed at a predetermined voltage. Using this sensing scheme, even though a sense node corresponding to an OFF cell is floated, a voltage of the floated sense node is not coupled down when a voltage of a neighboring sense node corresponding to an ON cell is lowered.

Abstract: A non-volatile semiconductor memory device includes a plurality of page buffers, each corresponding to a sense node. Voltages of a first set of sense nodes are varied according to states of corresponding memory cells during a first sense period, while voltages of a second set of sense nodes are fixed at a predetermined voltage. During the second sense period, voltages of the second set of sense nodes are varied according to states of corresponding memory cells, while voltages of the first set of sense nodes are fixed at a predetermined voltage. Using this sensing scheme, even though a sense node corresponding to an OFF cell is floated, a voltage of the floated sense node is not coupled down when a voltage of a neighboring sense node corresponding to an ON cell is lowered.

Abstract: Disclosed is a signal processing circuit which outputs a digital word corresponding to a current source controlled by a physical response. The signal processing circuit includes an analog integrated circuit for generating an analog signal in response to a time varying reference signal and a signal corresponding to the current source controlled by the physical response, a reference signal generator for generating a reference signal, a comparator for comparing the analog signal with the reference signal, an output circuit for generating the digital word indicating a time interval defined by a start signal and an end signal indicating a transition of an output of the comparator, and a controller inactivating the comparator in response to the end signal.

Abstract: A multi-level semiconductor memory device preferably includes a plurality of wordlines connected to memory cells configured to store multi-level data. A first circuit supplies a temperature-responsive voltage to a selected wordline in order to read a state of a selected memory cell. A second circuit supplies a predetermined voltage to non-selected wordlines. The first circuit preferably includes a semiconductor element that varies its resistance in accordance with temperature. Reliable program-verifying and reading functions are preferably provided despite migration of threshold voltage distribution profiles due to temperature variations.

Abstract: A nonvolatile semiconductor memory device comprising a main memory cell array and a spare memory cell array, capable of freely accessing data in the spare memory cell array irrespective of the physical addresses of the spare memory cell array, and a method thereof are disclosed. The logical addresses of the spare memory cell array are assigned prior to the logical addresses of the main memory cell array in response to a first control signal, and data stored in the spare memory cell array is read earlier than data in the main memory cell array.

Abstract: A non-volatile semiconductor memory device includes a plurality of page buffers, each corresponding to a sense node. Voltages of a first set of sense nodes are varied according to states of corresponding memory cells during a first sense period, while voltages of a second set of sense nodes are fixed at a predetermined voltage. During the second sense period, voltages of the second set of sense nodes are varied according to states of corresponding memory cells, while voltages of the first set of sense nodes are fixed at a predetermined voltage. Using this sensing scheme, even though a sense node corresponding to an OFF cell is floated, a voltage of the floated sense node is not coupled down when a voltage of a neighboring sense node corresponding to an ON cell is lowered.

Abstract: A nonvolatile semiconductor memory device comprising a main memory cell array and a spare memory cell array, capable of freely accessing data in the spare memory cell array irrespective of the physical addresses of the spare memory cell array, and a method thereof are disclosed. The logical addresses of the spare memory cell array are assigned prior to the logical addresses of the main memory cell array in response to a first control signal, and data stored in the spare memory cell array is read earlier than data in the main memory cell array.