Patents by Inventor Tae-Hun Kim

Tae-Hun Kim has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10411033
    Abstract: A semiconductor device includes a plurality of channel structures on a substrate, each channel structure extending in a first direction perpendicular to the substrate, and having a gate insulating layer and a channel layer, a common source extension region including a first semiconductor layer having an n-type conductivity between the substrate and the channel structures, a plurality of gate electrodes on the common source extension region and spaced apart from each other on a sidewall of each of the channel structures in the first direction, and a common source region on the substrate in contact with the common source extension region and including a second semiconductor layer having an n-type conductivity, wherein the gate insulating layer of each of the channel structures extends to cover an upper surface and at least a portion of a bottom surface of the common source extension region.
    Type: Grant
    Filed: May 31, 2018
    Date of Patent: September 10, 2019
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Kwang-soo Kim, Yong-seok Kim, Tae-hun Kim, Min-kyung Bae, Jae-hoon Jang, Kohji Kanamori
  • Publication number: 20190273185
    Abstract: A semiconductor light emitting device includes a light emitting structure having a first conductivity-type semiconductor layer, an active layer and a second conductivity-type semiconductor layer, a transparent electrode layer on the second conductivity-type semiconductor layer and spaced apart from an edge of the second conductivity-type semiconductor layer, a first insulating layer on the light emitting structure to cover the transparent electrode layer and including a plurality of holes connected to the transparent electrode layer, and a reflective electrode layer on the first insulating layer and connected to the transparent electrode layer through the plurality of holes.
    Type: Application
    Filed: November 28, 2018
    Publication date: September 5, 2019
    Inventors: JuHeon YOON, Jung Hwan KIL, Tae Hun KIM, Hwa Ryong SONG, Jae In SIM
  • Patent number: 10384497
    Abstract: The present invention relates to an apparatus and a method for monitoring a tire pressure considering a low pressure situation. Provided is a tire pressure monitoring apparatus considering a low pressure situation including: a radius analyzing unit which calculates a radius analysis value using a relative velocity difference and an average velocity calculated from wheel velocities of the wheels mounted on the vehicle; a critical value setting unit which compares the calculated radius analysis value with a predetermined determination reference value and sets different critical values in accordance with the comparison result; and a low pressure determining unit which determines a low pressure of a tire mounted on a vehicle using the set critical value.
    Type: Grant
    Filed: July 14, 2016
    Date of Patent: August 20, 2019
    Assignee: HYUNDAI AUTRON CO., LTD.
    Inventors: Tae-Hun Kim, Tae-Rim Choi
  • Publication number: 20190251038
    Abstract: Provided are a memory controller and an application processor (AP) for controlling utilization and performance of an input/output (I/O) device and a method of operating the memory controller. The memory controller includes an address translator configured to translate a first address received from a host processor into a second address indicating a memory address based on an address translation scheme selected from a plurality of address translation schemes based on memory resource utilization; and an evaluation module configured to evaluate the memory resource utilization of each of the plurality of address translation schemes based on a plurality of memory addresses generated based on each of the plurality of address translation schemes.
    Type: Application
    Filed: February 11, 2019
    Publication date: August 15, 2019
    Applicant: Samsung Electronics Co., Ltd.
    Inventors: Hyun-joon KANG, Tae-hun KIM
  • Publication number: 20190237626
    Abstract: A semiconductor light emitting device includes: a light emitting structure having a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer stacked therein along a stacking direction, a transparent electrode layer on the second conductivity-type semiconductor layer and divided into first and second regions, the transparent electrode layer having a plurality of first through-holes disposed in the first region, an insulating reflective layer covering the transparent electrode layer and having a plurality of second through-holes in a region overlapping the second region along the stacking direction, and a reflective electrode layer on the region of the insulating reflective layer and connected to the transparent electrode layer through the plurality of second through-holes.
    Type: Application
    Filed: August 6, 2018
    Publication date: August 1, 2019
    Inventors: Ju Heon YOON, Tae Hun KIM, Jae In SIM
  • Publication number: 20190237114
    Abstract: A multi-level sensing circuit for a multi-level memory device configured to “recognize” more than two different voltages. The multi-level voltage sensing circuit may include a pre-charge controller configured to pre-charge a pair of bit lines with a bit-line pre-charge voltage level in response to an equalizing signal during a sensing mode. The multi-level voltage sensing circuit may include a read controller configured to maintain a voltage of the pair of bit lines at the bit-line pre-charge voltage level in response to a read control signal during a sensing operation. The multi-level voltage sensing circuit may include a sense-amplifier configured to generate data of the pair of bit lines during the sensing mode. The multi-level voltage sensing circuit may include a voltage sensor configured to generate the equalizing signal by comparing a bit-line voltage with a reference voltage.
    Type: Application
    Filed: July 24, 2018
    Publication date: August 1, 2019
    Applicant: SK hynix Inc.
    Inventors: Hyung Sik WON, Tae Hun KIM
  • Publication number: 20190229242
    Abstract: A semiconductor light emitting device includes a light-emitting structure including a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer, a first transparent electrode layer on the second conductivity-type semiconductor layer, a first insulating layer on the first transparent electrode layer, the first insulating layer including a plurality of through-holes, a reflective electrode layer on the first insulating layer and connected to the first transparent electrode layer through the plurality of through-holes, and a transparent protection layer covering upper and side surfaces of the reflective electrode layer, the transparent protection layer being on a portion of the first insulating layer.
    Type: Application
    Filed: July 26, 2018
    Publication date: July 25, 2019
    Inventors: Ju Heon YOON, Jung Hwan KIL, Tae Hun KIM, Hwa Ryong SONG, Jae In SIM
  • Publication number: 20190220438
    Abstract: A system for assisting users in making progress towards the completion of a task by recommending actions is provided. The techniques disclosed herein enable a system to receive user input signals, such as a voice input, a text input or any other type of input comprising phrases indicating a task. The system can then automatically generate recommendations for directing the user to complete the task. The techniques disclosed herein can also identify a contextually-relevant application that is most suitable for completing the identified task. For instance, a user may have several messaging applications. Based on a context of the user's input, and other historical data utilized by one or more machine learning engines, a system can recommend an appropriate application, or provide a ranking of the applications, suitable for completing an identified task. The techniques disclosed herein also employ machine learning engines to improve accuracy of the recommendations over time.
    Type: Application
    Filed: January 15, 2018
    Publication date: July 18, 2019
    Inventors: Manjot Singh PAL, Bernd Ingo PLONTSCH, Tae Hun KIM
  • Patent number: 10350950
    Abstract: The present invention relates to an apparatus and a method for monitoring tire pressure according to a tire characteristic.
    Type: Grant
    Filed: June 27, 2016
    Date of Patent: July 16, 2019
    Assignee: HYUNDAI AUTRON CO., LTD.
    Inventors: Tae-Hun Kim, Dong-Jin Na
  • Patent number: 10338094
    Abstract: An apparatus for pretreating a wheel speed includes a tone wheel having a plurality of teeth, a hall sensor configured to detect a measurement angle including an offset of each of the teeth, an offset correcting unit configured to correct the measurement angle with a corrective offset when disturbance is generated and a frequency estimating unit configured to estimate a frequency based on a result value calculated from the offset correcting unit.
    Type: Grant
    Filed: November 25, 2014
    Date of Patent: July 2, 2019
    Assignee: Hyundai Autron Co., Ltd.
    Inventors: Tae-Hun Kim, Seung-Hwan Shin, Byung-Koo Choi, Young-Taek Cho
  • Publication number: 20190197286
    Abstract: A display device includes a substrate having a display region and a non-display region disposed at one side of the display region, the display region includes first and second areas adjacent to each other; a display unit disposed on a front surface of the substrate, the display unit including a plurality of pixels for displaying an image; a cushion layer disposed on a rear surface of the substrate, the cushion layer including a first opening portion corresponding to the first area; a fingerprint sensor provided in the first opening portion of the cushion layer, the fingerprint sensor sensing a fingerprint of a user; and a first light-blocking layer disposed on a rear surface of the substrate, the first light-blocking layer covering at least part of the cushion layer and a lower surface of the fingerprint sensor.
    Type: Application
    Filed: July 27, 2018
    Publication date: June 27, 2019
    Inventors: Jeung Soo KIM, Tae Eun KIM, Youn Bum LEE, Young Kwang KIM, Tae Hun KIM, Sang Hyun LEE
  • Publication number: 20190181297
    Abstract: A light-emitting device includes a light-emitting chip having a first surface and a second surface. A first light reflection pattern is formed on the second surface. A plurality of terminals are disposed to be connected to the light-emitting chip by passing through the first light reflection pattern. A second light reflection pattern is formed on side surfaces of the light-emitting chip and the first light reflection pattern. A light-transmitting pattern is formed between the light-emitting chip and the second light reflection pattern and extends between the first light reflection pattern and the second light reflection pattern. A wavelength conversion layer is formed on the first surface of the light-emitting chip.
    Type: Application
    Filed: May 21, 2018
    Publication date: June 13, 2019
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: JU HEON YOON, JAE IN SIM, TAE HUN KIM, GI BUM KIM
  • Publication number: 20190139983
    Abstract: A three-dimensional semiconductor memory device includes an electrode structure including gate electrodes and insulating layers, which are alternately stacked on a substrate, a semiconductor pattern extending in a first direction substantially perpendicular to a top surface of the substrate and penetrating the electrode structure, a tunnel insulating layer disposed between the semiconductor pattern and the electrode structure, a blocking insulating layer disposed between the tunnel insulating layer and the electrode structure, and a charge storing layer disposed between the blocking insulating layer and the tunnel insulating layer. The charge storing layer includes a plurality of first charge trap layers having a first energy band gap, and a second charge trap layer having a second energy band gap larger than the first energy band gap. The first charge trap layers are embedded in the second charge trap layer between the gate electrodes and the semiconductor pattern.
    Type: Application
    Filed: October 23, 2018
    Publication date: May 9, 2019
    Inventors: KYUNGHWAN LEE, YONGSEOK KIM, BYOUNG-TAEK KIM, TAE HUN KIM, DONGKYUN SEO, JUNHEE LIM
  • Publication number: 20190050316
    Abstract: According to an aspect of inventive concepts, there is provided a memory controller configured to control a memory device including a plurality of memory pages, the memory controller including an error correction code (ECC) region manager configured to manage the plurality of memory pages by dividing the plurality of memory pages into ECC enable regions and ECC disable regions, and an ECC engine configured to perform an ECC operation on data included in the ECC enable regions.
    Type: Application
    Filed: February 19, 2018
    Publication date: February 14, 2019
    Applicant: Samsung Electronics Co., Ltd.
    Inventors: Tae-hun KIM, Yong-sang YU, Man-hwee JO, Min-young JOE, Ji-woong KIM, Nak-hee SEONG
  • Publication number: 20190050048
    Abstract: A memory controller, an application processor, and a method of operating the memory controller can control performance and power consumption of an input/output device. The method includes allowing the memory device to enter a power down mode after an idle state is maintained for a first time period corresponding to a first setting value which is currently set, allowing the memory device to enter from the power down mode into an active state when access to the memory device occurs, determining a maintenance time of the power down mode to change the first setting value to a second setting value, based on a result obtained by monitoring a driving pattern of the memory device, and when the idle state is maintained for a second time period different from the first time period, allowing the memory device to enter the power down mode, based on the second setting value.
    Type: Application
    Filed: April 19, 2018
    Publication date: February 14, 2019
    Inventors: HYUN-JOON KANG, TAE-HUN KIM
  • Publication number: 20190019809
    Abstract: A vertical memory device and method of manufacture thereof are provided. The vertical memory device includes gate electrode layers stacked on a substrate; a channel layer penetrating through the gate electrode layers; and a first epitaxial layer in contact with a lower portion of the channel layer and including a region having a diameter smaller than an external diameter of the channel layer.
    Type: Application
    Filed: March 30, 2018
    Publication date: January 17, 2019
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Kyung Hwan LEE, Yong Seok KIM, Tae Hun KIM, Byoung Taek KIM, Jun Hee LIM
  • Publication number: 20180374869
    Abstract: A semiconductor device includes a plurality of channel structures on a substrate, each channel structure extending in a first direction perpendicular to the substrate, and having a gate insulating layer and a channel layer, a common source extension region including a first semiconductor layer having an n-type conductivity between the substrate and the channel structures, a plurality of gate electrodes on the common source extension region and spaced apart from each other on a sidewall of each of the channel structures in the first direction, and a common source region on the substrate in contact with the common source extension region and including a second semiconductor layer having an n-type conductivity, wherein the gate insulating layer of each of the channel structures extends to cover an upper surface and at least a portion of a bottom surface of the common source extension region.
    Type: Application
    Filed: May 31, 2018
    Publication date: December 27, 2018
    Inventors: Kwang-soo KIM, Yong-seok KIM, Tae-hun KIM, Min-kyung BAE, Jae-hoon JANG, Kohji KANAMORI
  • Patent number: 10160272
    Abstract: Disclosed are a method and a system for monitoring the pressure of a tire. The system measures frequencies of multiple tires mounted on the vehicle, sets a first average frequency for a normal pressure state and a second average frequency for determination of a low pressure state, wherein the first average frequency is calculated by accumulating the measured frequencies for each speed interval in a stop mode and the second average frequency is calculated by accumulating the measured frequencies for each speed interval in a driving mode, calculates low-pressure probabilities for each speed interval of the tire by using the second frequency, a predetermined low-pressure reference frequency, and a predetermined frequency determination interval for determining low-pressure, and determines whether each tire is at low pressure state by aggregating the low-pressure probabilities for each speed interval of the tire.
    Type: Grant
    Filed: July 14, 2016
    Date of Patent: December 25, 2018
    Assignee: Hyundai Autron Co., Ltd.
    Inventors: Seung-Hwan Shin, Tae-Hun Kim
  • Patent number: D860980
    Type: Grant
    Filed: October 28, 2016
    Date of Patent: September 24, 2019
    Assignee: SPIGEN, INC.
    Inventors: Woo Jin Kim, Judy Jahey Chung, Ki Dong Kwon, Tae Hun Kim, Hyun Joo Lee, Joo Young Yoon, Hong Jin Park
  • Patent number: D861655
    Type: Grant
    Filed: October 28, 2016
    Date of Patent: October 1, 2019
    Assignee: SPIGEN, INC.
    Inventors: Woo Jin Kim, Judy Jahey Chung, Ki Dong Kwon, Tae Hun Kim, Hyun Joo Lee, Joo Young Yoon, Hong Jin Park