Patents by Inventor Tae In Hwang

Tae In Hwang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20180182445
    Abstract: A memory device may include first and second latch sections configured to respectively store a target address and a recent input address, a comparison unit configured to compare an input address with the target address and the recent input address respectively stored in the first and second latch sections, and output a resultant signal, a counting section configured to increase a count corresponding to the recent address stored in the second latch section in response to the resultant signal, and a control unit configured to check the count of the counting section and update the input address to the second latch section in response to the resultant signal.
    Type: Application
    Filed: October 9, 2017
    Publication date: June 28, 2018
    Inventors: Woo-Young LEE, Duck-Hwa HONG, Jung-Hyun KIM, Jae-Hoon CHA, Jeong-Tae HWANG
  • Publication number: 20180151376
    Abstract: A method of fabricating a semiconductor device includes forming first and second gate dielectric layers on first and second regions of a semiconductor substrate, respectively, forming a first metal-containing layer on the first and second gate dielectric layers, performing a first annealing process with respect to the first metal-containing layer, removing the first metal-containing layer from the first region, forming a second metal-containing layer on an entire surface of the semiconductor substrate, performing a second annealing process with respect to the second metal-containing layer, forming a gate electrode layer on the second metal-containing layer, and partially removing the gate electrode layer, the second metal-containing layer, the first metal-containing layer, the first gate dielectric layer, and the second gate dielectric layer to form first and second gate patterns on the first and second regions, respectively.
    Type: Application
    Filed: October 30, 2017
    Publication date: May 31, 2018
    Applicant: Samsung Electronics Co., Ltd.
    Inventors: Soojung Choi, Moonkyun Song, Yoon Tae Hwang, Kyumin Lee, Sangjin Hyun
  • Publication number: 20180143424
    Abstract: Provided is a smart pixel blind having aesthetics that may be felt by a user by including a plurality of pixels disposed in a two-dimensional array. In the smart pixel blind, driving devices are provided in the respective pixels, and when the user inputs a predetermined shape using a portable terminal, or the like, a main controller receives the input shape and controls the driving devices provided in the respective pixels to allow the input shape to be displayed.
    Type: Application
    Filed: February 21, 2017
    Publication date: May 24, 2018
    Inventors: Soo-Hong LEE, Dae-Eun KIM, Jeonggyu LEE, Min Hyuk WOO, Hyun-Tae HWANG, Sungeun LEE, Sunghoon LEE, Sangki KIM, Heungryong JEE, Hojoon SON, Hyebin KIM
  • Patent number: 9975768
    Abstract: A system for generating and purifying hydrogen. To generate hydrogen, the system includes inlets configured to receive a hydrogen carrier and an inert insulator, a mixing chamber configured to combine the hydrogen carrier and the inert insulator, a heat exchanger configured to apply heat to the mixture of hydrogen carrier and the inert insulator, wherein the applied heat results in the generation of hydrogen from the hydrogen carrier, and an outlet configured to release the generated hydrogen. To purify hydrogen, the system includes a primary inlet to receive a starting material and an ammonia filtration subassembly, which may include an absorption column configured to absorb the ammonia into water for providing purified hydrogen at a first purity level. The ammonia filtration subassembly may also include an adsorbent member configured to adsorb ammonia from the starting material into an adsorbent for providing purified hydrogen at a second purity level.
    Type: Grant
    Filed: August 4, 2016
    Date of Patent: May 22, 2018
    Assignee: Purdue Research Foundation
    Inventors: Arvind Varma, Hyun Tae Hwang, Ahmad Al-Kukhun
  • Patent number: 9960770
    Abstract: A semiconductor integrated circuit device may include a target PMOS transistor, a target NMOS transistor, a first stress-applying circuit, a second stress-applying circuit, a third stress-applying circuit and a fourth stress-applying circuit. An inverter may include the target PMOS transistor and the NMOS transistor. The first stress-applying circuit may be configured to apply a first DC level to a gate of the target PMOS transistor. The second stress-applying circuit may be configured to apply a second DC level to a gate of the target NMOS transistor. The third stress-applying circuit may be configured to apply an AC voltage shape to the gate of the target NMOS transistor. The fourth stress-applying circuit may be configured to apply the AC voltage to a drain of the target NMOS transistor.
    Type: Grant
    Filed: February 10, 2016
    Date of Patent: May 1, 2018
    Assignee: SK hynix Inc.
    Inventors: Jeong Tae Hwang, Jin Youp Cha, Young Sik Heo
  • Publication number: 20180115193
    Abstract: A wireless power receiver is disclosed. The wireless power receiver according to an embodiment of the present invention comprises: a resonator for receiving wireless power; a rectifier for converting alternating current power received from the resonator to direct current power and supplying output power to a load; and a control unit for adjusting a resonant frequency of the resonator to directly control the output power of the rectifier supplied to the load.
    Type: Application
    Filed: March 15, 2016
    Publication date: April 26, 2018
    Applicant: MAPS, INC.
    Inventors: Jong Tae HWANG, Hyun Ick SHIN, Sang O JEON, Dae Ho KIM, Hui Yong CHUNG, Joon RHEE
  • Publication number: 20180108424
    Abstract: A semiconductor device includes a fuse array section suitable for performing program and read operations; a control signal generation section suitable for generating a precharge control signal and a word line control signal; a bit line control section suitable for controlling a precharge operation of a bit line in response to the precharge control signal and a source signal; and a word line control section suitable for controlling activation of a program word line and a read word line for performing the program and read operations in response to the word line control signal, wherein the control signal generation section controls the word line control signal to be activated after a predetermined time from the activation of the precharge control signal.
    Type: Application
    Filed: June 2, 2017
    Publication date: April 19, 2018
    Inventor: Jeong-Tae HWANG
  • Patent number: 9934875
    Abstract: An integrated circuit may include nonvolatile memory suitable for outputting stored data during the boot-up operation, one or more registers suitable for receiving the data output by the nonvolatile memory and storing the received data when the boot-up operation is performed, and one or more internal circuits suitable for operating using the data stored in the one or more registers. In no-update mode, although the boot-up operation is performed, a data update from the nonvolatile memory to the registers may not be performed.
    Type: Grant
    Filed: June 1, 2016
    Date of Patent: April 3, 2018
    Assignee: SK Hynix Inc.
    Inventors: Ja-Beom Koo, Jeong-Tae Hwang
  • Patent number: 9922773
    Abstract: The present invention provides an ionic polymer membrane prepared by irradiating the compound represented by formula 1 and an ionic polymer. The ionic polymer membrane of the present invention has the advantage of excellent processability, low production costs, high ion exchange capacity and high durability. Also, the method for preparing the ionic polymer membrane of the invention not only facilitates the production of the ionic polymer membrane in a 3-dimensional network structure which has high ion exchange capacity and high dimensional stability but also makes it easy to produce membranes in various forms and sizes by using the composition itself as a coating solution with using the commercialized inexpensive ionic polymer without additional high-risk multi-step introduction process of ionic exchange group.
    Type: Grant
    Filed: June 10, 2016
    Date of Patent: March 20, 2018
    Assignee: Korea Atomic Energy Research Institute
    Inventors: Chan Hee Jung, Junhwa Shin, In Tae Hwang, Joon Yong Sohn, Chang-Hee Jung
  • Patent number: 9923077
    Abstract: A method of curing a dielectric layer, such as a dielectric layer that has a relatively small thickness and/or a narrow width or a complicated shape, is provided. The method of curing a dielectric layer for the manufacture of a semiconductor device includes providing the dielectric layer, wherein the dielectric layer is on a semiconductor layer; forming a first metal-containing layer on the dielectric layer; forming a curing atom screening region in an upper portion of the first metal-containing layer by injecting screening atoms onto an upper surface of the first metal-containing layer; injecting curing atoms into the first metal-containing layer through the upper surface of the first metal-containing layer; and flowing the curing atoms into the dielectric layer in an atmosphere at a first temperature.
    Type: Grant
    Filed: April 8, 2016
    Date of Patent: March 20, 2018
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Yoon-tae Hwang, Ki-joong Yoon, Moon-kyu Park, Sang-jin Hyun, Hoon-joo Na
  • Publication number: 20180062445
    Abstract: A wireless power receiver is disclosed. The wireless power receiver comprises: a resonance tank for receiving magnetic resonance-type wireless power; a rectifier including a diode bridge and a first switch connected to both ends of any one diode for forming the diode bridge, so as to rectify wireless power received by the resonance tank and supply the rectified wireless power to a load; and a controller controlling the first switch so as to operate the rectifier as a full-wave rectifier or a half-wave rectifier.
    Type: Application
    Filed: March 15, 2016
    Publication date: March 1, 2018
    Applicant: MAPS, INC.
    Inventors: Jong Tae HWANG, Hyun Ick SHIN, Min Jung KO, Dong Su LEE, Jong Hoon LEE, Ki-Woong JIN, Joon RHEE
  • Publication number: 20180048185
    Abstract: A dual band wireless power reception unit is disclosed. The wireless power reception unit according to one embodiment comprises: a first resonator; a second resonator connected to the first resonator in parallel; a single rectifier having, as an input, a node in which outputs of the first resonator and the second resonator are connected to each other in parallel; at least one switch having a first output, a second output, and an input, wherein the second output is connected to the ground; at least one capacitor connected to the second resonator in parallel, and of which one terminal is connected to the first output of the switch and the other terminal is connected to the rectifier input; and a frequency sensor sensing an input frequency from the rectifier input, and of which an output is connected to the input of the switch.
    Type: Application
    Filed: February 29, 2016
    Publication date: February 15, 2018
    Applicant: MAPS, INC.
    Inventors: Jong-Tae HWANG, Sung-Min PARK, Ki-Woong JIN, Sang-O JEON, Ik-Gyoo SONG, Hyun-Ick SHIN, Joon RHEE
  • Patent number: 9876497
    Abstract: An active diode having an improved transistor turn-off control method is disclosed. The active diode comprises: a comparator for comparing voltages of both ends of a parasitic diode of a transistor; and a gate driver for controlling a gate terminal of the transistor according to the comparison result of the comparator, and estimates a turn-on time of the transistor and uses the same to control the gate terminal of the transistor.
    Type: Grant
    Filed: April 25, 2014
    Date of Patent: January 23, 2018
    Assignee: MAPS, Inc.
    Inventors: Jong-Tae Hwang, Hyun-Ick Shin, Sang-O Jeon, Joon Rhee
  • Publication number: 20180015423
    Abstract: Disclosed is a 1D nanofibers quasi-aligned, grid structure cross-laminated, and pore distribution and size controlled 3D polymer nanofiber membrane, and manufacturing method thereof. A 3D polymer nanofiber membrane controlled in pore size and porosity is formed by employing an electrospinning pattern forming apparatus that includes double insulating blocks quasi-aligns nanofibers in a specific direction by transforming an electric field and includes a current collector rotatable in 90°. Additionally, the 3D polymer nanofiber membrane may be used for air filters, separator, water filters, cell culture membranes, and so on by allowing various properties thereto through a functional surface coating.
    Type: Application
    Filed: July 13, 2017
    Publication date: January 18, 2018
    Inventors: Il-Doo Kim, Chanhoon Kim, Su Ho Cho, Won Tae Hwang
  • Patent number: 9868881
    Abstract: A swelling tape for filling a gap and a method of filling a gap are provided. The swelling tape can be applied within the gap having a fluid to realize a 3D shape thereby filling the gap, and be used to fix a subject forming the gap as necessary.
    Type: Grant
    Filed: June 17, 2014
    Date of Patent: January 16, 2018
    Assignee: LG Chem, Ltd.
    Inventors: Se Ra Kim, Suk Ky Chang, Byung Kyu Jung, Yoon Tae Hwang, Cha Hun Ku, Sung Jong Kim, Se Woo Yang, Hyo Sook Joo, Min Soo Park
  • Patent number: 9862864
    Abstract: A swelling tape for filling a gap and a method of filling a gap are provided. The swelling tape can be applied within the gap having a fluid to realize a 3D shape thereby filling the gap, and be used to fix a subject forming the gap as necessary.
    Type: Grant
    Filed: July 24, 2013
    Date of Patent: January 9, 2018
    Assignee: LG Chem, Ltd.
    Inventors: Se Ra Kim, Suk Ky Chang, Byung Kyu Jung, Yoon Tae Hwang, Cha Hun Ku, Sung Jong Kim, Se Woo Yang, Hyo Sook Joo, Min Soo Park
  • Publication number: 20170372770
    Abstract: A semiconductor memory device includes: a high frequency signal control unit for receiving an external command address signal, removing noise and glitch from the external command address signal and outputting a first command address signal; a pulse width control unit for controlling a pulse width of the first command address signal or maintaining the pulse width of the first command address signal and outputting a second command address signal with a predetermined pulse width; a refresh operation control unit for generating a row address for a refresh operation in response to the second command address signal; and a memory cell array for performing the a refresh operation in response to the row address.
    Type: Application
    Filed: January 5, 2017
    Publication date: December 28, 2017
    Inventors: Sang-Ah HYUN, Jeong-Tae HWANG
  • Patent number: 9837138
    Abstract: A semiconductor device may be provided. The semiconductor device may include an input signal generator configured to enable an input signal although a reset signal is disabled after a clock enable signal is enabled. The semiconductor device may include a self-refresh enable signal generator configured to generate a self-refresh enable signal based on the input signal.
    Type: Grant
    Filed: February 21, 2017
    Date of Patent: December 5, 2017
    Assignee: SK hynix Inc.
    Inventors: Hong Ki Moon, Jeong Tae Hwang
  • Patent number: 9793368
    Abstract: Semiconductor devices are provided. A semiconductor device includes an insulating layer. The semiconductor device includes a rare earth element supply layer on the insulating layer. Moreover, the semiconductor device includes a metal layer that is on the rare earth element supply layer. The rare earth element supply layer is between the insulating layer and the metal layer. Methods of forming semiconductor devices are also provided.
    Type: Grant
    Filed: February 19, 2016
    Date of Patent: October 17, 2017
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Hyeok-jun Son, Wan-don Kim, Hoon-joo Na, Sang-jin Hyun, Yoon-tae Hwang, Jae-yeol Song
  • Publication number: 20170229921
    Abstract: A magnetic resonance wireless power transmission device capable of adjusting resonance frequency is disclosed. A wireless power transmission device according to an embodiment of the present invention comprises: a power amplifier for amplifying a wireless power signal using a driving frequency signal; a resonator for configuring a resonance tank and wirelessly transmitting, through magnetic resonance, the wireless power signal output from the power amplifier using a resonance frequency of the resonance tank; and a resonance control unit for controlling a duty ratio using a frequency applied to the resonator or a frequency signal generated by the resonator and adjusting the resonance frequency of the resonator.
    Type: Application
    Filed: July 31, 2015
    Publication date: August 10, 2017
    Applicant: MAPS, Inc.
    Inventors: Jong-Tae HWANG, Hyun-Ick SHIN, Dong-Su LEE, Jong-Hoon LEE, Sang-O JEON, Ik-Gyoo SONG, Dae-Ho KIM, Joon RHEE