Abstract: Provided are a pressure-sensitive adhesive composition for a touch panel, a conductive film, a touch panel and a pressure-sensitive adhesive film. The exemplary pressure-sensitive adhesive composition for a touch panel, the conductive film or the pressure-sensitive adhesive film has excellent durability and optical properties such as transparency. In addition, such physical properties are stably maintained under severe conditions. Particularly, a pressure-sensitive adhesive layer is attached to a conductor thin film, and thus resistance change of the conductor thin film is effectively inhibited even when the conductor thin film is exposed to the severe conditions. Therefore, the pressure-sensitive adhesive composition may be effectively used to manufacture a touch panel.

Abstract: A semiconductor apparatus may include an internal voltage level controller configured to output either a normal trimming code or a test voltage code as a voltage control code in response to a test mode signal, a specific operation start signal, and a specific operation end signal. The semiconductor apparatus may include an internal voltage generator configured to generate an internal voltage and control a voltage level of the internal voltage in response to the voltage control code.

Abstract: An active diode having an improved transistor turn-off control method is disclosed. The active diode comprises: a comparator for comparing voltages of both ends of a parasitic diode of a transistor; and a gate driver for controlling a gate terminal of the transistor according to the comparison result of the comparator, and estimates a turn-on time of the transistor and uses the same to control the gate terminal of the transistor.

Abstract: A system for generating and purifying hydrogen. To generate hydrogen, the system includes inlets configured to receive a hydrogen carrier and an inert insulator, a mixing chamber configured to combine the hydrogen carrier and the inert insulator, a heat exchanger configured to apply heat to the mixture of hydrogen carrier and the inert insulator, wherein the applied heat results in the generation of hydrogen from the hydrogen carrier, and an outlet configured to release the generated hydrogen. To purify hydrogen, the system includes a primary inlet to receive a starting material and an ammonia filtration subassembly, which may include an absorption column configured to absorb the ammonia into water for providing purified hydrogen at a first purity level. The ammonia filtration subassembly may also include an adsorbent member configured to adsorb ammonia from the starting material into an adsorbent for providing purified hydrogen at a second purity level.

Abstract: A system for generating and purifying hydrogen. To generate hydrogen, the system includes inlets configured to receive a hydrogen carrier and an inert insulator, a mixing chamber configured to combine the hydrogen carrier and the inert insulator, a heat exchanger configured to apply heat to the mixture of hydrogen carrier and the inert insulator, wherein the applied heat results in the generation of hydrogen from the hydrogen carrier, and an outlet configured to release the generated hydrogen. To purify hydrogen, the system includes a primary inlet to receive a starting material and an ammonia filtration subassembly, which may include an absorption column configured to absorb the ammonia into water for providing purified hydrogen at a first purity level. The ammonia filtration subassembly may also include an adsorbent member configured to adsorb ammonia from the starting material into an adsorbent for providing purified hydrogen at a second purity level.

Abstract: Provided is an electro-spinning type pattern forming apparatus. The electro-spinning type pattern forming apparatus includes a nozzle, a stage, and a fiber guide part. The nozzle has a first voltage applied thereto and spins a spinning solution. The stage is disposed below the nozzle to support a substrate on which a pattern is to be formed and has a second voltage applied thereto. The fiber guide part is disposed between the nozzle and the stage, and transforms the electric field formed between the nozzle and the stage to apply a force, acting in a direction parallel to the stage, to nano-fibers spun from the nozzle. The electro-spinning type pattern forming apparatus can form a nano-fiber pattern arranged in one direction.

Abstract: Semiconductor devices are provided. A semiconductor device includes an insulating layer. The semiconductor device includes a rare earth element supply layer on the insulating layer. Moreover, the semiconductor device includes a metal layer that is on the rare earth element supply layer. The rare earth element supply layer is between the insulating layer and the metal layer. Methods of forming semiconductor devices are also provided.

Abstract: An apparatus for automated electricity demand response based on online trading of demand side resources. The apparatus includes a communication unit, a demand response management system, an utility grid management system, and a demand response resources in use, a database; and a demand response processing unit configured to receive an electricity demand reduction instruction message according to a certain demand response service contract condition in the demand response management system.

Abstract: A semiconductor apparatus may include an internal voltage level controller configured to output either a normal trimming code or a test voltage code as a voltage control code in response to a test mode signal, a specific operation start signal, and a specific operation end signal. The semiconductor apparatus may include an internal voltage generator configured to generate an internal voltage and control a voltage level of the internal voltage in response to the voltage control code.

Abstract: A method of curing a dielectric layer, such as a dielectric layer that has a relatively small thickness and/or a narrow width or a complicated shape, is provided. The method of curing a dielectric layer for the manufacture of a semiconductor device includes providing the dielectric layer, wherein the dielectric layer is on a semiconductor layer; forming a first metal-containing layer on the dielectric layer; forming a curing atom screening region in an upper portion of the first metal-containing layer by injecting screening atoms onto an upper surface of the first metal-containing layer; injecting curing atoms into the first metal-containing layer through the upper surface of the first metal-containing layer; and flowing the curing atoms into the dielectric layer in an atmosphere at a first temperature.

Abstract: A semiconductor device including an input unit suitable for transferring external command signals provided from an external device to an internal device and a detection unit suitable for detecting a predetermined command signal among the external command signals, and restricting the transfer of the detected command signal.

Abstract: A semiconductor memory device includes: a normal cell region having normal cells; a redundancy cell region having first redundancy cells replaced with repair target cells of the normal cells and second redundancy cells which are not replaced with the repair target cells; a fuse unit suitable for programming repair information including replacement information and one of state information and a repair address of the repair target cells; a boot-up unit suitable for outputting the repair information programmed in the fuse unit, resetting the repair information in response to a test control signal, and outputting the reset repair information; an information update unit suitable for generating the test control signal; a test control unit suitable for generating a test address during a redundancy test operation; and a test unit suitable for selectively testing the second redundancy cells in response to the test address.

Abstract: A semiconductor integrated circuit device having a function for detecting degradation of a semiconductor device and a method of driving the same are disclosed. The semiconductor integrated circuit device includes an NMOS transistor electrically coupled to a PMOS transistor and configured to constitute an inverter together with the PMOS transistor, a first stress application unit electrically coupled to the PMOS transistor and configured to apply stress to the PMOS transistor, and a second stress application unit electrically coupled to the NMOS transistor and configured to apply the stress to the NMOS transistor.

Abstract: An active diode driver for operating a switch of an active rectifier using an active diode is provided. The active diode driver may first control a soft turn-on of the switch and secondly control a hard turn-on of the switch, thereby making it possible for the switch to be softly turned-on.

Abstract: A semiconductor integrated circuit device having a function for detecting degradation of a semiconductor device and a method of driving the same are disclosed. The semiconductor integrated circuit device includes an NMOS transistor electrically coupled to a PMOS transistor and configured to constitute an inverter together with the PMOS transistor, a first stress application unit electrically coupled to the PMOS transistor and configured to apply stress to the PMOS transistor, and a second stress application unit electrically coupled to the NMOS transistor and configured to apply the stress to the NMOS transistor.

Abstract: A semiconductor integrated circuit device may include a target PMOS transistor, a target NMOS transistor, a first stress-applying circuit, a second stress-applying circuit, a third stress-applying circuit and a fourth stress-applying circuit. An inverter may include the target PMOS transistor and the NMOS transistor. The first stress-applying circuit may be configured to apply a first DC level to a gate of the target PMOS transistor. The second stress-applying circuit may be configured to apply a second DC level to a gate of the target NMOS transistor. The third stress-applying circuit may be configured to apply an AC voltage shape to the gate of the target NMOS transistor. The fourth stress-applying circuit may be configured to apply the AC voltage to a drain of the target NMOS transistor.

Abstract: An active diode that features improved control of transistor turn-off is provided. Such an active diode may include a comparator to compare voltages between opposite ends of a parasitic diode, and a gate driver to control a gate terminal of the transistor according to the comparison result of the comparator. Furthermore, the active diode may further include an off-timing controller to control the transistor to be turned off at a point in time when voltages of the opposite ends of the parasitic diode turn positive. Thus, the active diode may be turned off when required.

Abstract: A light emitting diode (LED) package includes: a package substrate having a first electrode structure and a second electrode structure; an LED chip disposed above a first surface of the package substrate and having a first electrode attached to the first electrode structure and a second electrode attached to the second electrode structure; a reflective layer disposed above the first surface of the package substrate to be separated from the LED chip, having a thickness less than a thickness of the LED chip, and configured to reflect light emitted from the LED chip to a given direction, wherein the wavelength converter has an upper surface substantially parallel to the first surface of the package substrate and a side surface inclined towards the upper surface of the wavelength converter.

Abstract: A gate driver driving a switching device is disclosed. The gate driver includes a capacitor which is coupled to the input of the switching device. The gate drive power consumption is reduced by this additional capacitor.

Abstract: There are provided a substrate film, a laminate, and method of manufacturing a polarizing film. The present application provides a substrate film capable of effectively manufacturing a polarizing film having a thickness of about 10 ?m or less, about 8 ?m or less, about 7 ?m or less, about 6 ?m or less, or about 5 ?m or less and having an excellent function such as polarization performance, a laminate, and a method of manufacturing the same. According to the invention, it is possible to prevent tearing, curling, or the like from occurring in the elongation process and manufacture a polarizing film by easily elongating a polarization material such as a PVA-based resin.