Abstract: An data output circuit for outputting a data stored in a core of a semiconductor memory device includes a clock generator for generating a rising clock and a falling clock by using an external clock, a clock repeater for outputting the rising clock and the falling clock as one of a high voltage clock and a low voltage clock in response to an external voltage level check signal, a level shifter for outputting a high voltage data generated by shifting the data synchronized with the high voltage clock, a data carrier for outputting a low voltage data synchronized with the low voltage clock, and a data repeater for outputting one of the high voltage data and the low voltage data in response to the external voltage level check signal.

Abstract: The present invention relates to a objective measurement of fabric pillings, to a measurement apparatus which includes stereovision technique using CCD cameras, captures the 3-dimensional contours of fabric pilling and defines the degree of pilling occurrences. This invention is composed of; a step to scan the surface of a pilling-containing fabric specimen which is laid on the table and translated in the right angle of the projector laser beam; a step to reconstruct the scanned fabric surface data in to a 3D image; a step to convert the 3D image into a binary image using height-threshold method and number, area, density of pillings acquired from standard pictures; a step to calculate the x, y coordinates and height values of each and every area of the specimen; a step to regress the relationship between the height values of the pilling fabric specimen and the actual height values.

Abstract: The present invention relates to a semiconductor device and a method for testing the same capable of reducing the number of probing pads used during wafer test. The semiconductor device includes a select circuit connected between a plurality of internal circuits to be tested and a single probing pad, for transmitting test signals inputted from the probing pads to any one of the plurality of the internal circuits according to a test mode signal generated in a wafer test mode. It is possible to reduce the number of the probing pads in the integrated circuit used for connection to a probe for contact of a probe card during wafer test. It is therefore possible to reduce test time.

Abstract: A method for forming an inner cylinder type storage electrode of a semiconductor memory device, comprising the steps of: forming a first insulating layer on a substrate; etching the first insulating layer to form a contact hole, thereby exposing a portion of the substrate; forming a conductive film for a storage electrode over the first insulating layer including the contact hole; forming a photosensitive film in a portion of the contact hole over the conductive film; forming a second insulating layer to be completely filled in the contact hole over the photosensitive film; etching the second insulating layer and the conductive film to expose the first insulating layer, thereby forming the storage electrode; and removing the first and second insulating layers and the photosensitive film.