Abstract: There are provided a semiconductor device and a manufacturing method thereof. The semiconductor device includes: a stack structure including a plurality of interlayer insulating layers and a plurality of gate conductive layers, which are stacked in an alternating manner; at least one support structure penetrating the stack structure in a substantially vertical manner, the at least one support structure being formed in a contact region; and a contact plug penetrating the stack structure in a substantially vertical manner, the contact plug being formed in the contact region, the contact plug being connected to a contact pad that is disposed on the bottom of the stack structure. The at least one support structure is formed of an oxide layer.

Abstract: The lead implanted in a body to apply electrical stimulation to body organs may include: an electrode wire having one end provided as an insertion portion to be inserted into a body and the other end provided as an interface portion for connection with an external device to transmit a stimulation signal: a plurality of first electrodes in the insertion portion; a plurality of second electrodes on the interface portion; and a plurality of signal lines interconnecting the first electrodes and the second electrodes, wherein the insertion portion of the electrode wire includes a plurality of support portions on which the first electrodes are respectively disposed and a plurality of stretchable portions between the support portions and expandable and contractible, and further includes an operation unit for pushing or pulling each support portion in a longitudinal direction of the electrode wire to adjust a position of the support portion.

Abstract: An implantable lead having adjustable electrode locations and a system for controlling the same. The implantable lead may include a plurality of first electrodes exposed and formed at an upper part of a main body at given intervals, a plurality of second electrodes coupled to a stepped lower part of the main body and configured to deliver a stimulus signal to a core area into which the lead is inserted, and a plurality of signal lines embedded in the main body and configured to connect the first electrodes and the second electrodes in a one-to-one manner. In this case, a slot for coupling and up and down movement of the second electrodes may be formed in the lower part. As the second electrodes are individually moved along the slot by an external force acting on the signal lines, locations of the second electrodes in the lower part may be adjusted.

Abstract: Provided are a method for administering a recombinant human growth hormone GX-H9 for treating growth hormone deficiency and a pharmaceutical composition containing a recombinant human growth hormone GX-H9 and a pharmaceutically acceptable carrier. The method includes administering recombinant human growth hormone GX-H9 once a week with a dosage of 0.1 to 0.3 mg per weight kg of a patient or twice-monthly with a dosage of 0.1 to 0.4 mg per weight kg of the patient.

Abstract: A method of detecting a heart rate using a photoplethysmography (PPG) signal with a removed motion artifact includes receiving, by a heart rate measurement device, a PPG signal and an acceleration signal; converting, by the heart rate measurement device, the PPG signal and the acceleration signal into signals in a frequency domain; calculating, by the heart rate measurement device, a difference between the PPG signal and the acceleration signal in the frequency domain and obtaining a PPG signal with a removed motion artifact; and estimating, by the heart rate measurement device, a heart rate based on the PPG signal with the removed motion artifact.

Abstract: An encapsulation film including an adhesive layer and an oxygen barrier layer on the adhesive layer is provided. The oxygen barrier layer includes binder resin and oxygen collecting particles dispersed in the binder resin. The oxygen collecting particles includes a first metal oxide that includes a crystal structure consisting of first metal sites and oxygen sites, where the crystal structure is in an oxygen deficiency state. A display apparatus including the encapsulation film is disclosed herein.

Abstract: The disclosure discloses anti ?-Syn antibodies preferentially recognizing ?-Syn aggregates. The antibodies of the present invention bind to ?-Syn aggregates with high affinity and specificity and inhibit accumulation or intercellular transfer of ?-Syn aggregates, and thus can be used for detection, diagnosis and/or treatment or prevention of various diseases caused by the accumulation of ?-Syn aggregates.

Abstract: A display apparatus with an integrated touch screen is provided. The display apparatus includes: a light-emitting device layer on a first substrate, a first encapsulation layer on the light-emitting device layer, a touch sensing layer on the light-emitting device layer, and a second encapsulation layer on the touch sensing layer, the second encapsulation layer including at least one inorganic layer.

Abstract: A method of manufacturing a semiconductor memory device includes processing a first substrate including a first align mark and a first structure, processing a second substrate including a second align mark and a second structure, orientating the first substrate and the second substrate such that the first structure and the second structure face each other, and controlling alignment between the first structure and the second structure by using the first align mark and the second align mark to couple the first structure with the second structure.

Abstract: A display panel comprises a first substrate including a display area and a non-display area surrounding the display area, a light emitting diode disposed in the display area on the first substrate, an adhesive layer covering the display area and the non-display area on the first substrate, and a second substrate bonded to the first substrate by the adhesive layer, wherein the second substrate includes a barrier structure portion for defining a plurality of open spaces on one surface of the second substrate that adjoins the adhesive layer.

Abstract: There are provided a semiconductor device and a manufacturing method thereof. The semiconductor device includes: a stack structure including a plurality of interlayer insulating layers and a plurality of gate conductive layers, which are stacked in an alternating manner; at least one support structure penetrating the stack structure in a substantially vertical manner, the at least one support structure being formed in a contact region; and a contact plug penetrating the stack structure in a substantially vertical manner, the contact plug being formed in the contact region, the contact plug being connected to a contact pad that is disposed on the bottom of the stack structure. The at least one support structure is formed of an oxide layer.

Abstract: Disclosed are systems and methods for mufti-point destination arrival time analysis. In one aspect, the system may include a memory storing instructions and at least one processor configured to execute the instructions to. The processor performs operations including receiving a request for an order, receiving an acceptance of an order associated with the first external system, determining, upon receiving the acceptance, a first arrival estimate, determining, upon assigning a delivery worker to fulfill the order, a second arrival estimate, and determining, upon receiving confirmation that the delivery worker has retrieved the order from the merchant, a third arrival estimate. Additionally, the operations may include and forwarding, upon their determination, the first, second, and third arrival estimates to the customer.

Abstract: There are provided a semiconductor device and a manufacturing method thereof. The semiconductor device includes: a stack structure including a plurality of interlayer insulating layers and a plurality of gate conductive layers, which are stacked in an alternating manner; at least one support structure penetrating the stack structure in a substantially vertical manner, the at least one support structure being formed in a contact region; and a contact plug penetrating the stack structure in a substantially vertical manner, the contact plug being formed in the contact region, the contact plug being connected to a contact pad that is disposed on the bottom of the stack structure. The at least one support structure is formed of an oxide layer.

Abstract: There are provided a semiconductor device and a manufacturing method thereof. The semiconductor device includes: a stack structure including a plurality of interlayer insulating layers and a plurality of gate conductive layers, which are stacked in an alternating manner; at least one support structure penetrating the stack structure in a substantially vertical manner, the at least one support structure being formed in a contact region; and a contact plug penetrating the stack structure in a substantially vertical manner, the contact plug being formed in the contact region, the contact plug being connected to a contact pad that is disposed on the bottom of the stack structure. The at least one support structure is formed of an oxide layer.

Abstract: A camera module includes a circuit board on which an image sensor is disposed, a lens unit disposed in front of a sensor surface of the image sensor, a housing accommodating the lens unit and the image sensor, disposed on the circuit board and a gyro sensor sensing the motion. The circuit board includes a first circuit board on which the image sensor is disposed, and a second circuit board on which the gyro sensor is disposed. The first circuit board may be disposed extending in a first axis direction, and the second circuit board may be disposed extending in a direction parallel to the optical axis direction while perpendicular to the first axis. The central axis of the gyro sensor may be parallel to the first axis direction but perpendicular to the optical axis direction.

Abstract: A method of controlling an implanted electrode includes receiving information from an external device; calculating a first region in a body in which the electrode is to be implanted and a second region in which electrode implantation is prohibited, based on the received information; and calculating a plurality of predicted paths through which an electrode is moved based on the first region or the second region, and outputting the plurality of predicted paths.

Abstract: A camera module includes a circuit board on which an image sensor is disposed, a lens unit disposed in front of a sensor surface of the image sensor, a housing accommodating the lens unit and the image sensor, disposed on the circuit board and a gyro sensor sensing the motion. The circuit board includes a first circuit board on which the image sensor is disposed, and a second circuit board on which the gyro sensor is disposed. The first circuit board may be disposed extending in a first axis direction, and the second circuit board may be disposed extending in a direction parallel to the optical axis direction while perpendicular to the first axis. The central axis of the gyro sensor may be parallel to the first axis direction but perpendicular to the optical axis direction.

Abstract: A method of manufacturing a semiconductor memory device includes processing a first substrate including a first align mark and a first structure, processing a second substrate including a second align mark and a second structure, orientating the first substrate and the second substrate such that the first structure and the second structure face each other, and controlling alignment between the first structure and the second structure by using the first align mark and the second align mark to couple the first structure with the second structure.

Abstract: A display apparatus with an integrated touch screen is provided. The display apparatus includes: a light-emitting device layer on a first substrate, a first encapsulation layer on the light-emitting device layer, a touch sensing layer on the light-emitting device layer, and a second encapsulation layer on the touch sensing layer, the second encapsulation layer including at least one inorganic layer.

Abstract: The disclosure discloses anti ?-Syn antibodies preferentially recognizing ?-Syn aggregates. The antibodies of the present invention bind to ?-Syn aggregates with high affinity and specificity and inhibit accumulation or intercellular transfer of ?-Syn aggregates, and thus can be used for detection, diagnosis and/or treatment or prevention of various diseases caused by the accumulation of ?-Syn aggregates.