Abstract: Provided are a polishing pad including a porous protrusion pattern, a polishing device including the same, and a manufacturing method of a polishing pad. The polishing pad includes a support layer, and a pattern layer disposed directly on the support layer, the pattern layer comprising a protrusion pattern having a plurality of pores. The pores contribute to an increase in perimeter length of the protrusion pattern in plan view, and a perimeter length of a polishing surface formed by the protrusion pattern per unit area is in a range of 1.0 mm/mm2 to 50.0 mm/mm2.

Abstract: A bulk-acoustic wave resonator comprises a substrate, a resonant portion comprising a first electrode, a piezoelectric layer, and a second electrode sequentially stacked on the substrate, and further comprising a center portion and an extension portion that is disposed along a periphery of the center portion, and an insertion layer that is disposed in the extension portion between the first electrode and the piezoelectric layer, and the insertion layer is formed of an aluminum alloy containing scandium (Sc).

Abstract: A bulk acoustic resonator package includes a substrate, a cap, and first and second bulk acoustic resonators each including a first electrode, a piezoelectric layer, and a second electrode stacked in a direction in which the substrate and the cap face each other, and disposed between the substrate and the cap, wherein the first and second bulk acoustic resonators form a bandwidth based on first and second resonant frequencies different from each other and first and second antiresonant frequencies different from each other, a difference between the first and second resonant frequencies exceeds 200 MHz, the first bulk acoustic resonator is disposed closer to the substrate than to the cap, and the second bulk acoustic resonator is disposed closer to the cap than to the substrate.

Abstract: A processor-implemented battery management method includes: estimating state information of a plurality of battery cells in a battery pack using a first battery state estimation model; determining whether state information of at least one of the plurality of battery cells is to be estimated using a second battery state estimation model; and estimating the state information of the at least one battery cell using the second model, in response to a result of the determining being that the state information of the at least one battery cell is to be estimated using the second model.

Abstract: A bulk acoustic resonator filter includes a plurality of bulk acoustic resonators connected between first and second radio frequency (RF) ports to form a frequency band, wherein each of the plurality of bulk acoustic resonators includes a first electrode, a second electrode, and a piezoelectric layer disposed between the first and second electrodes, the plurality of bulk acoustic resonators include first and second bulk acoustic resonators having different differences between a resonant frequency and an antiresonant frequency, and different ratios of a thickness of the piezoelectric layer to a total thickness of the first and second electrodes, and/or different thicknesses of the piezoelectric layer.

Abstract: A bulk acoustic resonator includes: a substrate; a protective layer; and a resonant portion including a piezoelectric layer, a first electrode disposed between the piezoelectric layer and the substrate, and a second electrode disposed between the piezoelectric layer and the protective layer. The protective layer covers a central portion of the resonant portion and a reflective portion surrounding the central portion and formed in a region in which an upper surface of the second electrode rises relative to the central portion. An upper surface of a portion of the protective layer covering the reflective portion is more gently inclined than the upper surface of a portion of the second electrode in the reflective portion.

Abstract: A bulk acoustic wave resonator is provided. The bulk acoustic wave resonator includes a board; a resonant portion including a first electrode, a piezoelectric layer, and a second electrode, and disposed on the board, and a temperature compensation layer disposed on the resonant portion, wherein the temperature compensation layer includes a temperature compensation portion formed of a dielectric and a loss compensation portion formed of a material different from a material of the temperature compensation portion, and wherein each of the temperature compensation portion and the loss compensation portion includes a plurality of linear patterns, and the linear patterns of the temperature compensation portion and the linear patterns of the loss compensation portion are alternately disposed.

Abstract: A bulk-acoustic wave resonator includes a substrate, a first electrode disposed on the substrate, a piezoelectric layer, of which at least a portion is disposed on the first electrode, a second electrode disposed on the piezoelectric layer, and a passivation layer disposed to cover the first electrode and the second electrode. Either one or both of the first electrode and the second electrode includes an aluminum alloy layer. Either one or both of the piezoelectric layer and the passivation layer has aluminum nitride, or aluminum nitride added with a doping material, having a ratio of an out-of-plane lattice constant “c” to an in-plane lattice constant “a” (c/a) of less than 1.58.

Abstract: A bulk-acoustic wave resonator includes: a substrate; a seed layer disposed on the substrate, and having a hexagonal crystal structure; a bottom electrode disposed on the seed layer; a piezoelectric layer at least partially disposed on the bottom electrode; and a top electrode disposed on the piezoelectric layer, wherein either one or both of the bottom electrode and the top electrode includes a scandium (Sc)-containing aluminum alloy layer.

Abstract: An acoustic wave resonator includes a resonating part disposed on and spaced apart from a substrate by a cavity, the resonating part including a membrane layer, a first electrode, a piezoelectric layer, and a second electrode that are sequentially stacked. 0 ???Mg?170 ? may be satisfied, ?Mg being a difference between a maximum thickness and a minimum thickness of the membrane layer disposed in the cavity.

Abstract: A lens includes a lens unit, an uneven layer formed on at least a portion of a surface of the lens unit, a buffer layer covering the uneven layer and having a shape conforming to an uneven surface of the uneven layer, and a water-repellent layer covering the buffer layer.

Abstract: The present disclosure provides a thermoplastic resin composition having high rigidity and a low coefficient of linear thermal expansion and a molded article including the same. Specifically, the thermoplastic resin composition includes a first polypropylene resin having crystallinity of 50% to 80%, a second polypropylene resin having a coefficient of linear thermal expansion of 70 ?m/m° C. to 90 ?m/m° C., an elastomer, and an inorganic filler.

Abstract: A bulk acoustic resonator package is provided. The bulk acoustic resonator package includes a substrate; a cap; a resonance portion including a first electrode, a piezoelectric layer, and a second electrode, stacked in a first direction in which the substrate and the cap face each other, and disposed between the substrate and the cap; and a cap melting member disposed to surround the resonance portion, and disposed to be in contact with a portion of a surface of the cap facing the substrate, when viewed in the first direction, and including a material or a structure that is based on a melting of the portion of the surface of the cap.

Abstract: An acoustic resonator filter is provided. The acoustic resonator filter includes a rear filter electrically connected between a front port and a rear port, through which a radio frequency (RF) signal passes, the rear filter including at least one film bulk acoustic resonator (FBAR); and a front filter electrically connected between the front port and the rear filter and including at least one solidly mounted resonator (SMR).

Abstract: A bulk-acoustic wave resonator may include: a substrate; a resonator unit including a first electrode disposed on the substrate, a piezoelectric layer disposed on the first electrode, and a second electrode disposed on the piezoelectric layer; and a protective layer disposed on a surface of the resonator unit. The protective layer is formed of a diamond film, and a grain size of the diamond film is 50 nm or more.

Abstract: A bulk-acoustic wave resonator may include: a substrate; a resonance portion; a first electrode disposed on the substrate; a piezoelectric layer disposed on the first electrode in the resonance portion; a second electrode disposed on the piezoelectric portion in the resonance portion; and a seed layer disposed in a lower portion of the first electrode. The seed layer may be formed of titanium (Ti) having a hexagonal close packed (HCP) structure, or an alloy of Ti having the HCP structure. The seed layer may have a thickness greater than or equal to 300 ? and less than or equal to 1000 ?, or may be thinner than the first electrode.

Abstract: A film bulk acoustic resonator includes: a first electrode disposed on a substrate; a piezoelectric body disposed on the first electrode and including AlN to which a dopant is added; and a second electrode disposed on the piezoelectric body and facing the first electrode such that the piezoelectric body is interposed between the second electrode and the first electrode, wherein the dopant includes either one of 0.1 to 24 at % of Ta and 0.1 to 23 at % of Nb.

Abstract: An acoustic resonator package includes: a substrate; an acoustic resonator disposed on the substrate; a cap disposed on the substrate and the acoustic resonator; and a bonding portion bonding the substrate and the cap to each other. The cap includes a central portion accommodating the acoustic resonator, and an outer portion disposed outside of the central portion and having a bonding surface. The outer portion includes protrusions in contact with the bonding portion, and at least one trench disposed between the protrusions. The acoustic resonator package further includes a first protective layer and a second protective layer, the first protective layer and the second protective layer being disposed on a region of the bonding surface formed on each of the protrusions.

Abstract: A bulk acoustic wave resonator includes: a first electrode; a piezoelectric layer disposed on at least a portion of the first electrode; and a second electrode disposed on the piezoelectric layer. The piezoelectric layer contains a dopant, and a value of [a thickness (nm) of the piezoelectric layer×a concentration (at %) of the dopant]/100 is less than or equal to 80.

Abstract: An acoustic wave resonator package is provided. The acoustic wave resonator package includes an acoustic wave resonator including an acoustic wave generator on a first surface of a substrate; a cover disposed to face the first surface of the substrate; a bonding member disposed between the substrate and the cover, and configured to bond a bonding surface of the acoustic wave generator and the cover to each other, wherein the bonding member includes glass frit, and the bonding surface of the acoustic wave resonator which is bonded to the bonding member may be formed of a dielectric material.