Patents by Inventor Tae Yun Kim

Tae Yun Kim has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 6603260
    Abstract: A plasma display panel (PDP) is capable of directly and effectively removing impurities from a discharging space for enhancing the purity of a discharging gas. The PDP has a getter layer formed of at least a portion of a barrier rib. The getter layer is independently formed at an upper portion of each barrier rib with respect to each discharging cell or maybe formed to cross each other at every other cell with respect to the discharging cells formed in a direction in which the barrier ribs extend. The getter material particles are dispersed in an insulation material so that the getter layer has an electrical insulation characteristic.
    Type: Grant
    Filed: July 14, 2000
    Date of Patent: August 5, 2003
    Assignee: Orion Electric Co., Ltd.
    Inventors: Tae Yun Kim, Young Kook Kyon
  • Publication number: 20030130525
    Abstract: There is disclosed a preparation method of 3-methylindole derivatives by reducing the aldehyde moiety in indole-3-carboxaldehyde derivatives in the presence of the copper or copper oxide-based hydrogenation catalyst. This process is performed in solvent under the condition of 50-300° C. and 50-1,000 psig in the presence of a solvent with a hydrogen atmosphere. The method is advantageous in the economic aspects because of the employment of a relatively inexpensive hydrogenation catalyst and the easy regeneration thereof. Further, this process is environmentally safe because the intended addition of the sulfur components is not required therefor.
    Type: Application
    Filed: January 2, 2003
    Publication date: July 10, 2003
    Applicant: SK Corporation
    Inventors: Byong-Sung Kwak, Tae-Yun Kim, Jin-Woong Kim, Sang-Il Lee
  • Patent number: 6586597
    Abstract: The present invention relates to a continuous process for the preparation of [3S-(3&agr;, 4a&bgr;, 8a&bgr;)]-N-tert-butyl-decahydro-3-isoquinolinecarboxamide, an intermediate useful in the synthesis of compounds for the treatment of viral diseases, from the reduction of N-tert-butyl-1,2,3,4-tetrahydro-3(S)-isoquinolinecarboxamide with a noble metal catalyst supported on inorganic oxide carrier in a fixed bed reaction system, with a high optical yield.
    Type: Grant
    Filed: September 4, 2001
    Date of Patent: July 1, 2003
    Assignee: SK Corporation
    Inventors: Sang-Hoon Park, Byoung-Sung Kwak, Tae-Yun Kim, In-Woo Lee, Seung-Hoon Oh
  • Publication number: 20030117882
    Abstract: A semiconductor memory device that generates, during a test operation, a burst control signal having a short pulse in a disable time of a burst control signal by using a pulse generator to control a precharge time. Accordingly, the semiconductor memory device, when receiving a high frequency operation clock signal, can be tested without delay of a test time by using a test circuit operated synchronously with a low frequency operation clock signal.
    Type: Application
    Filed: September 27, 2002
    Publication date: June 26, 2003
    Inventor: Tae Yun Kim
  • Patent number: 6430100
    Abstract: A redundancy circuitry is used in a memory device for repairing defects in a packaged memory having registers by using antifuse.
    Type: Grant
    Filed: December 13, 2000
    Date of Patent: August 6, 2002
    Assignee: Hyundai Electronics Industries Co., LTD
    Inventor: Tae-Yun Kim
  • Patent number: 6429319
    Abstract: Disclosed is a process for the production of optically pure (S)-beta-hydroxy-gamma-butyrolactone through the hydrogenation of substituted carboxylic acid derivatives. A solution containing 1 to 50% by weight of a substituted carboxylic acid derivative is fed at a WHSV of 0.1 to 10 h−1, to a fixed bed reactor which is filled with a catalyst and maintained at a reaction temperature of 50 to 550° C. under a halogen partial pressure of 15 to 5,500 psig. The catalyst is composed of a noble metal as a catalytically effective ingredient which is impregnated in an inorganic oxide as a support. The molar ratio of the hydrogen to the substituted carboxylic acid derivative is maintained at a molar ratio of 1:1 to 10:1. The process can produce optically pure (S)-beta-hydroxy-gamma-butyrolactone with higher purities at higher yields than can conventional techniques. In addition to being relatively simple and environmentally friendly, the process is so economically favorable as to apply to industrial production.
    Type: Grant
    Filed: January 22, 2001
    Date of Patent: August 6, 2002
    Assignee: SK Corporation
    Inventors: Byong-Sung Kwak, Ki-Nam Chung, Tae-Yun Kim, Ki-Ho Koh, Jin-Woong Kim, Choon-Gil Kim
  • Patent number: 6363451
    Abstract: A data bus line control circuit prevents a problem of a data access operation on a global data bus (GDB) line although two blocks are simultaneously selected. The data bus line control circuit includes: a global data bus line which is arranged between memory units adjacent to each other as two pairs, and transmits a data from a local data bus line positioned between adjacent sub blocks; and transmission means which is connected between the local data bus line and the global data bus line, and transmits bit line signals of two sub blocks to one pair of global data bus lines different from each other through the local data bus line, when the two sub blocks are simultaneously selected by a block isolation selection signal. As a result, a circuit arrangement and a layout design become simplified, and two operations of 8K refresh and 4K refresh are possible in one chip, therefore, two kinds of effects can be achieved by one chip.
    Type: Grant
    Filed: June 28, 1999
    Date of Patent: March 26, 2002
    Assignee: Hyundai Electronics Industries Co,Inc.
    Inventor: Tae Yun Kim
  • Publication number: 20020035275
    Abstract: Disclosed is a process for the production of optically pure (S)-beta-hydroxy-gamma-butyrolactone through the hydrogenation of substituted carboxylic acid derivatives. A solution containing 1 to 50% by weight of a substituted carboxylic acid derivative is fed at a WHSV of 0.1 to 10 h−1, to a fixed bed reactor which is filled with a catalyst and maintained at a reaction temperature of 50 to 550° C. under a halogen partial pressure of 15 to 5,500 psig. The catalyst is composed of a noble metal as a catalytically effective ingredient which is impregnated in an inorganic oxide as a support. The molar ratio of the hydrogen to the substituted carboxylic acid derivative is maintained at a molar ratio of 1:1 to 10:1. The process can produce optically pure (S)-beta-hydroxy-gamma-butyrolactone with higher purities at higher yields than can conventional techniques. In addition to being relatively simple and environmentally friendly, the process is so economically favorable as to apply to industrial production.
    Type: Application
    Filed: January 22, 2001
    Publication date: March 21, 2002
    Inventors: Byong-Sung Kwak, Ki-Nam Chung, Tae-Yun Kim, Ki-Ho Koh, Jin-Woong Kim, Choon-Gil Kim
  • Patent number: 6345007
    Abstract: An apparatus for pre fetching and restoring data stored in memory cells in a semiconductor memory device includes a bit line sense amplifying unit and a control unit. The bit line sense amplifying unit senses the data stored in the memory cells in response to a bit line sense amplifier driving signal. The control unit drives the bit line sense amplifying unit before data applied on pairs of bit lines are transferred to pairs of data bus lines in response to a control signal during a pre fetching operation. Additionally, the control unit drives the bit line sense amplifying unit after data applied on the pairs of bit lines via the pairs of data bus lines is transferred to the pairs of bit lines in response to the control signal.
    Type: Grant
    Filed: November 28, 2000
    Date of Patent: February 5, 2002
    Assignee: Hyundai Electronics Industries Co., Ltd.
    Inventor: Tae-Yun Kim
  • Publication number: 20010043501
    Abstract: A redundancy circuitry is used in a memory device for repairing defects in a packaged memory having registers by using antifuse.
    Type: Application
    Filed: December 13, 2000
    Publication date: November 22, 2001
    Inventor: Tae-Yun Kim
  • Patent number: 6285603
    Abstract: A repair circuit of a semiconductor memory device utilizes a plurality of current blocking circuits, each provided with a programmable anti-fuse, to reduce current consumption in DRAM devices, particularly during a normal operation mode.
    Type: Grant
    Filed: December 30, 1999
    Date of Patent: September 4, 2001
    Assignee: Hyundai Electronics IndustriesCo., Ltd.
    Inventors: Kie-bong Ku, Tae-yun Kim
  • Patent number: 6141273
    Abstract: A circuit conveniently sets the width of input/output data in a semiconductor memory device. The circuit includes a test mode signal generator for generating a test mode signal which sets a WCBR mode to a special test mode; a program signal generator for generating a program signal according to the test mode signal output from the test mode signal generator and a signal transmitted through a predetermined address line; a pair of anti-fuse programmers, each having an anti-fuse for outputting a programmed output value indicative of a program status of an anti-fuse programmed according to the program signal; and a decoder for decoding the signal output from the anti-fuse programmers to change the input/output data width of the semiconductor memory device. The anti-fuses are used for resetting the input/output data width at the package level of a manufactured memory device.
    Type: Grant
    Filed: December 30, 1999
    Date of Patent: October 31, 2000
    Assignee: Hyundai Electronics Industries Co., Ltd.
    Inventors: Kie-bong Ku, Tae-yun Kim
  • Patent number: 6097151
    Abstract: There is disclosed an AC PDP comprising two plates. These two plates are opposite to each other with a plurality of parallel electrodes on one plate being across a plurality of parallel electrodes on the other. The space therebetween, sealed by a side wall, is filled with a discharge gas. A fluorescent layer is formed on the side of one of the plates in the sealed space. Opposite to the fluorescent layer, a dielectric multilayer structure is laminated on the electrodes and covered with an overcoat layer, wherein its sub-layers are of lower fluidity as they are nearer to the overcoat layer. This is accomplished by arranging the sub-layers in such a way that they may be higher in softening temperature as they are nearer to the overcoat layer. Since the sub-layers are made of glass materials, this softening temperature gradient is determined by the content of PbO and/or B.sub.2 O.sub.3 in each of the sub-layers, ranging from approximately 20-50% by weight and approximately 0.5-12.
    Type: Grant
    Filed: December 30, 1997
    Date of Patent: August 1, 2000
    Assignee: Orion Electric Co., Ltd.
    Inventors: Tae Yun Kim, Jin Ho Sunwoo
  • Patent number: 5912899
    Abstract: An integrated circuit memory device includes first and second input buffers, and first and second input bus lines corresponding to the first and second input buffers. The first input buffer is connected to the first input bus line while a transfer gate is provided between the second input buffer and the second input bus line. The transfer gate connects the second input buffer with the second input bus line during a data input-output operation and disconnects the second input buffer from the second input bus line during a memory test operation. A coupling circuit couples the first and second input bus lines during the memory test operation so that a data value from the first input bus line is inverted and applied to the second input bus line responsive to a first value of an address buffer output during the memory test operation.
    Type: Grant
    Filed: December 23, 1996
    Date of Patent: June 15, 1999
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Tae-Yun Kim, Hyun-Sung Hwang
  • Patent number: 5545880
    Abstract: This invention relates to a method for automatic control of a microwave oven which can make precise cooking control available by classifying the cooking control into cases when cooking is completed below the boiling point of water, such as thawing or warming up, and cases when cooking is completed above the boiling point of water. For types of cooking which are complete without water boiling, the invention sets the initial cooking time period by determining the time it takes for the output voltage of a temperature detection sensor to reach a rise starting point. For types of cooking which include water boiling, the invention sets the initial cooking time period by determining the time it takes for the output voltage of the temperature detection sensor to reach a maximum rise point. The invention then sets an additional time period equivalent to the initial time period multiplied by a cooking constant corresponding to the type of cooking that is desired.
    Type: Grant
    Filed: March 20, 1995
    Date of Patent: August 13, 1996
    Assignee: Goldstar Co., Ltd.
    Inventors: Jong Uk Bu, Tae Yun Kim