Abstract: Provided is a method of controlling voltage levels of overall outputs in a combinational mode, in an ultrasonic diagnosis apparatus that may operate in the combinational mode. A judging unit of the ultrasonic diagnosis apparatus may judge whether at least a part of individual modes included in the combinational mode exceeds a threshold determined by safety standards, in accordance with an inputted overall output voltage level control command. When it is judged that at least the part of the individual modes exceeds the threshold determined by the safety standards, an output control unit may maintain an individual output with respect to the at least the part, among the voltage levels that may be outputted from a transducer, to be below the threshold, so that the individual output may be below the standards in accordance with the overall output control command.

Abstract: An ultrasound diagnosis apparatus providing a map of an interest index. The ultrasound diagnosis apparatus includes: a calculating unit for calculating a mechanical index (MI) corresponding to a depth value in a direction in which ultrasound travels from an ultrasound output part of a transmission transducer; a visualization unit for generating an MI map in which a relationship between the calculated MI and the depth value is visualized in the form of a graph; and a display unit for displaying the MI map.

Abstract: A diagnostic ultrasound system may visualize and display a mechanical index (MI) as a map. The diagnostic ultrasound system may include a calculating unit to calculate an MI at a depth value on an ultrasonic direction axis from an ultrasonic output unit of an ultrasonic transducer, a visualizing unit to visualize a relationship between the calculated MI and the corresponding depth value in the form of a graph to generate an MI map, and a display unit to display the MI map.

Abstract: Provided is a semiconductor light emitting device. The semiconductor light emitting device comprises a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer. The active layer comprises a first active layer, a second active layer, an electron barrier layer on the first conductive type semiconductor layer. The first active layer and the second active layer comprise a quantum well layer and a quantum barrier layer. The electron barrier layer is formed between the first active layer and the second active layer. The second conductive type semiconductor layer is formed on the active layer.

Abstract: Provided is a semiconductor light emitting device and a method for manufacturing the same. The semiconductor light emitting device comprises: a first conductive type semiconductor layer; an active layer on the first conductive type semiconductor layer; an undoped semiconductor layer on the active layer; a first delta-doped layer on the undoped semiconductor layer; and a second conductive type semiconductor layer on the first delta-doped layer.

Abstract: Provided are a semiconductor light emitting device and a method of manufacturing the same. The semiconductor light emitting layer comprises a first conductive type semiconductor layer, an active layer on the first conductive type semiconductor layer, and a second conductive type semiconductor layer on the active layer. The active layer comprises a quantum well layer, a quantum barrier layer, and a dual barrier layer.

Abstract: A pulse control device is maintained with a constant pulse width corresponding to a change of process or temperature. The pulse control device comprises a fuse set for selectively outputting a delay increase signal and a delay decrease signal that have a different state based on a cutting or non-cutting state of a fuse on which information on a change of process is programmed, and a pulse generator provided with a plurality of delay cells with predetermined time delay for selectively increasing or decreasing the number of the plurality of delay cells depending on the delay increase signal and the delay decrease signal to generate an internal clock with a pulse width corresponding to the number of the increased or decreased delay cells.

Abstract: Provided is a semiconductor light emitting device. The semiconductor light emitting device comprises a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer. The active layer comprises a first active layer, a second active layer, an electron barrier layer on the first conductive type semiconductor layer. The first active layer and the second active layer comprise a quantum well layer and a quantum barrier layer. The electron barrier layer is formed between the first active layer and the second active layer. The second conductive type semiconductor layer is formed on the active layer.

Abstract: Disclosed is a method of preparing 3-hydroxytetrahydrofuran using cyclodehydration. More particularly, this invention relates to a method of preparing 3-hydroxytetrahydrofuran, including subjecting 1,2,4-butanetriol to cyclodehydration under reaction conditions of a reaction temperature of 30˜180° C. and reaction pressure of 5000 psig or less in the presence of a strong acid cation exchange resin catalyst having a sulfonic acid group as an exchange group. According to the method of this invention, 3-hydroxytetrahydrofuran can be economically prepared at higher yield and productivity than when using conventional methods.

Abstract: An ultrasound imaging device and method for clutter filtering is provided. The ultrasound imaging device provides logic for calculating signal characteristic values from an in-phase/quadrature-phase (I/Q) of an ultrasound signal reflected from an object and determining to remove a clutter element from the I/Q signal through comparison of the calculated signal characteristic values. Accordingly, the ultrasound imaging device provides a blood flow distribution of the object, more precisely visualized, to a user.

Abstract: The ultrasound system includes a processor that extracts plane data from volume data formed by using ultrasound signals received from a target object to form a plane image and sets a region of interest (ROI) on the plane image. The processor extracts at least a portion of the volume data to form a ROI image and a 3D image corresponding to the ROI image. A control unit controls a display unit to display the plane image together with the 3D image, and also controls the processor to set a new ROI on the displayed plane image to form a new ROI image and a 3D image corresponding to the new ROI image.

Abstract: An ultrasound imaging device according to exemplary embodiments of the present invention may determine a skewness with respect to an in-phase/quadrature-phase (I/Q) signal in a frequency domain, and may provide a decision logic of a clutter filtering using the skewness. Accordingly, by filtering a clutter signal of the I/Q signal according to the skewness of the I/Q signal, an ultrasonic image may be formed using a signal in which a clutter component is filtered and/or submatrices in which a Doppler component is dominant, and the formed ultrasonic image may be provided to a user.

Abstract: Disclosed are a nitride semiconductor light emitting device and a method for manufacturing the same. The nitride semiconductor light emitting device includes a first nitride layer, an active layer including at least one delta-doping layer on the first nitride layer through delta-doping, and a second nitride layer on the active layer.

Abstract: A pulse control device is maintained with a constant pulse width corresponding to a change of process or temperature. The pulse control device comprises a fuse set for selectively outputting a delay increase signal and a delay decrease signal that have a different state based on a cutting or non-cutting state of a fuse on which information on a change of process is programmed, and a pulse generator provided with a plurality of delay cells with predetermined time delay for selectively increasing or decreasing the number of the plurality of delay cells depending on the delay increase signal and the delay decrease signal to generate an internal clock with a pulse width corresponding to the number of the increased or decreased delay cells.

Abstract: Provided are a semiconductor light emitting device and a method of manufacturing the same. The semiconductor light emitting layer comprises a first conductive type semiconductor layer, an active layer on the first conductive type semiconductor layer, and a second conductive type semiconductor layer on the active layer. The active layer comprises a quantum well layer, a quantum barrier layer, and a dual barrier layer.

Abstract: A light emitting diode of one embodiment includes a light emitting device having a plurality of N-type semiconductor layers including a first N-type semiconductor layer and a second N-type semiconductor layer on the first N-type semiconductor layer, an active layer on an upper layer of the plurality of N-type semiconductor layers, and a P-type semiconductor layer on the active layer. The first N-type semiconductor layer includes a first Si doped Nitride layer and the second N-type semiconductor layer includes a second Si doped Nitride layer. The first and second N-type semiconductor layers have a Si impurity concentration different from each other.

Abstract: A pulse control device is maintained with a constant pulse width corresponding to a change of process or temperature. The pulse control device comprises a fuse set for selectively outputting a delay increase signal and a delay decrease signal that have a different state based on a cutting or non-cutting state of a fuse on which information on a change of process is programmed, and a pulse generator provided with a plurality of delay cells with predetermined time delay for selectively increasing or decreasing the number of the plurality of delay cells depending on the delay increase signal and the delay decrease signal to generate an internal clock with a pulse width corresponding to the number of the increased or decreased delay cells.

Abstract: Disclosed is an ultrasound color Doppler image system. The ultrasound color Doppler image system includes a calculation unit that calculates a mean value associated with an I/Q signal corresponding to a pixel of a color image in an ultrasound image and generates a multiplication value using the calculated mean value; a comparison unit that compares the generated multiplication value with the mean value; and a masking unit that performs masking of the pixel based on a comparison result, and, the calculation unit calculates the mean value of the I/Q signal for each frame, selects a reference mean value based on scales of the calculated mean values, and generates the multiplication value by multiplying the selected reference mean value and a scale factor.

Abstract: Embodiments of adaptively performing clutter filtering are disclosed. In one embodiment, by way of non-limiting example, an ultrasound system comprises: an ultrasound data acquisition unit configured to transmit and receive ultrasound signals to and from a target object to output a plurality of ultrasound data corresponding to each pixel of a color Doppler mode image; and a processing unit in communication with the ultrasound data acquisition unit and being configured to calculate a power difference value corresponding to each of the pixels based on the plurality of ultrasound data, determine whether the power difference value is equal to or larger than a first threshold value, and if the power difference value is equal to or larger than the first threshold value, then perform first clutter filtering upon the plurality of ultrasound data, or if the power difference value is less than the first threshold value, then perform second clutter filtering upon the plurality of ultrasound data.

Abstract: Provided is a semiconductor light emitting device and a method for manufacturing the same. The semiconductor light emitting device comprises: a first conductive type semiconductor layer; an active layer on the first conductive type semiconductor layer; an undoped semiconductor layer on the active layer; a first delta-doped layer on the undoped semiconductor layer; and a second conductive type semiconductor layer on the first delta-doped layer.